Diodes Incorporated ZXM64N02XTA

Overview

ZXM64N02XTA from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in MSOP-8 package, with R_DS(ON) = 40 mΩ at V_GS = 4.5 V, continuous drain current I_D = 5.4 A, and low gate threshold voltage V_GS(th) = 1.0 V (typ). It serves as a high-efficiency synchronous rectifier or load switch in low-voltage DC-DC converters.

For engineers reviewing the ZXM64N02XTA datasheet, ZXM64N02XTA pinout, ZXM64N02XTA application, or ZXM64N02XTA equivalent, key selection criteria include on-resistance at 4.5 V drive, SOIC-compatible footprint in MSOP-8, thermal resistance R_θJA = 90 °C/W, and suitability for 3.3 V/5 V logic-level gate control in power management circuits.

Technical Context

This MOSFET employs a high-density trench-gate structure optimized for low conduction loss and fast switching transitions. Its 20 V V_BR(DSS) rating and 40 mΩ R_DS(ON) support operation in 12 V input or lower buck converter secondary-side stages.

The device features low gate charge Q_g = 7.5 nC (typ) and output charge Q_oss = 19 nC (typ), enabling efficient operation at switching frequencies up to 1 MHz in compact power supplies where gate drive strength is limited.

Key Specifications

Pinout & Package

Package: MSOP-8 (3.0 mm × 3.0 mm × 1.1 mm), thermally enhanced with exposed drain paddle connected to pins 1, 2, 3, 4, 5, 6, 7, and 8 via internal metal frame.

Key Features

Applications

Availability

ZXM64N02XTA is available at Aetrix Electronics and suitable for DC-DC converters, USB power delivery switches, and motor control circuits requiring stable component supply and verified thermal performance in MSOP-8 footprint.

Supply support for ZXM64N02XTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

This MOSFET belongs to Diodes' ZXM high-density power transistor family, engineered specifically for high-efficiency, low-voltage power management in space-constrained consumer and industrial applications.

FAQ

Is ZXM64N02XTA pin-compatible with SOIC-8 MOSFETs?

No. ZXM64N02XTA uses MSOP-8 (3.0 mm × 3.0 mm), not SOIC-8 (4.9 mm × 6.0 mm). Pin 1–7 are all drain connections, while SOIC-8 typically assigns discrete drain/source/gate pins. PCB layout and thermal pad design must follow Diodes' MSOP-8 outline DS33484, page 7.

What is the maximum safe operating temperature for continuous 5.4 A drain current?

At I_D = 5.4 A and R_DS(ON) = 40 mΩ, power dissipation is 1.16 W. With R_θJA = 90 °C/W and T_J(max) = 150 °C, maximum ambient temperature is 70 °C on standard JEDEC 2S2P board. Derating is required above this ambient.

Can ZXM64N02XTA be used in avalanche-rated applications?

No. The datasheet does not specify avalanche energy rating (E_AS) or repetitive avalanche characteristics. It is rated only for clamped inductive switching within absolute maximum ratings; sustained avalanche operation is not supported.

Why is ZXM64N02XTA marked "NOT RECOMMENDED FOR NEW DESIGN"?

Diodes Incorporated issued this notice in June 2018 due to planned obsolescence and migration to newer-generation devices like ZXMS6003FF (60 V, 3.5 A, 30 mΩ) and ZXMP6A13F (60 V, 4.5 A, 35 mΩ), which offer improved R_DS(ON), lower Q_g, and active product support.