Diodes Incorporated ZXM64N035GTA

Overview

ZXM64N035GTA from Diodes Incorporated (formerly Zetex) is a 35V N-channel enhancement-mode MOSFET in SOT223 package, with R_DS(on) = 0.050 Ω @ V_GS = 10V, I_D = 3.7A, and fast switching (t_r = 4.6 ns, t_f = 8 ns). It serves as a low-voltage power switch in Class D audio output stages and motor control circuits requiring high efficiency and low gate drive.

For engineers reviewing the ZXM64N035GTA datasheet, ZXM64N035GTA pinout, ZXM64N035GTA application, or ZXM64N035GTA equivalent, key selection criteria include its 35V V_DS, 6.7A continuous drain current at 25°C, 0.050 Ω on-resistance, SOT223 thermal performance (R_θJA = 32 °C/W with FR4), and body diode recovery (Q_rr = 19.1 nC).

Technical Context

This MOSFET employs a high-cell-density planar structure optimized for low conduction loss and rapid turn-on/turn-off transitions. Its 1.0V gate threshold enables compatibility with 3.3V logic-level drive, while low Q_g (27 nC) and Q_gd (4.5 nC) support high-frequency PWM operation up to several hundred kHz.

The integrated source-drain body diode exhibits V_SD = 0.95V at I_S = 3.7A and t_rr = 24.5 ns under specified dI/dt, making it suitable for synchronous rectification and freewheeling in buck or half-bridge topologies without external diode supplementation.

Key Specifications

Pinout & Package

SOT223 package: surface-mount, 4-pin (3 active + tab), thermally enhanced with exposed drain pad soldered to PCB copper for improved heat dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMN3025LSD-13 and SI2302DS-T1-GE3, ZXM64N035GTA uniquely balances 35V rating, 0.050 Ω on-resistance, SOT223 thermal capability (3.9 W), and 27 nC gate charge - making it optimal for medium-power, thermally constrained, 24–32V systems where voltage margin and PCB real estate are both critical.

Availability

ZXM64N035GTA is available at Aetrix Electronics and suitable for Class D audio amplifiers, brushed DC motor drivers, battery-powered power tools, and USB-C PD load switching requiring stable component supply and consistent parametric performance across production batches.

Supply support for ZXM64N035GTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex in 2008 and maintains its high-performance analog and discrete portfolio, emphasizing precision, efficiency, and reliability in power management semiconductors.

ZXM64N035GTA belongs to Zetex's legacy high-cell-density planar MOSFET product line, engineered specifically for low-voltage, high-efficiency power switching in audio, motor, and portable power applications where thermal density and gate drive simplicity are critical.

FAQ

What is the maximum safe operating junction temperature for ZXM64N035GTA?

The absolute maximum junction temperature is +150°C, and the device is rated for continuous operation up to this limit. Thermal design must ensure T_J remains below 150°C under worst-case ambient and power dissipation conditions, using the specified R_θJA = 32 °C/W for FR4 layouts with adequate copper pour.

Can ZXM64N035GTA be driven directly by a 3.3V microcontroller GPIO?

Yes - with a minimum V_GS(th) of 1.0V and typical R_DS(on) of 0.050 Ω at V_GS = 4.5V, the MOSFET achieves usable conduction at 3.3V. However, R_DS(on) rises to ~0.062 Ω at 4.5V, so full 6.7A rating requires ≥4.5V gate drive; for 3.3V-only systems, verify I_D derating per the V_GS = 4.5V curve.

Does ZXM64N035GTA include an integrated body diode, and what are its recovery characteristics?

Yes - it features a monolithic source-drain body diode with V_SD = 0.95V at I_S = 3.7A and t_rr = 24.5 ns at dI/dt = 100 A/s. Q_rr is 19.1 nC, enabling efficient freewheeling in buck and half-bridge topologies without external Schottky supplementation.

What is the recommended PCB layout for thermal performance in SOT223?

Mount the device on 25 mm × 25 mm single-sided 1 oz copper with the drain tab fully soldered to the copper pour. Avoid thermal relief on the tab pad. Use ≥4 thermal vias (0.3 mm diameter) under the tab connecting to inner or backside ground planes to achieve the rated R_θJA = 32 °C/W and 3.9 W power dissipation.