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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZXM64N03XTC

Name: ZXM64N03XTC
Brand: Diodes Incorporated
SKU: ZXM64N03XTC
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXM64N03XTC

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Datasheet:: ZXM64N03XTC.pdf

Description:: MOSFET N-CH 30V 5A 8MSOP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

ZXM64N03XTC from Zetex Semiconductors is a 30V N-channel enhancement-mode MOSFET in SOIC-8 package, featuring R_DS(on) = 0.045 Ω @ V_GS = 10V, I_D = 3.7A, and fast switching with t_r = 4.5 ns and Q_g = 27 nC. It serves as a low-voltage power switch in DC–DC converters and load disconnect circuits.

For engineers reviewing the ZXM64N03XTC datasheet, ZXM64N03XTC pinout, ZXM64N03XTC application, or ZXM64N03XTC equivalent, key selection criteria include its 30V V_BR(DSS), 1.0V V_GS(th), body diode V_SD = 0.95V, thermal resistance R_θJA = 70°C/W (FR4 PCB), and SOIC-8 footprint compatibility.

Technical Context

This MOSFET employs a high-density planar structure optimized for low R_DS(on) and minimal gate charge, enabling high-efficiency operation at 3.3V–5V logic-level drive. Its 1.0V threshold voltage ensures reliable turn-on with standard microcontroller GPIOs.

Dynamic parameters-including C_iss = 950 pF, C_oss = 200 pF, and t_d(off) = 20.5 ns-are characterized under standardized test conditions (V_DD = 5V, R_G = 6.2Ω) and remain stable across junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	30 V - Maximum blocking voltage before avalanche conduction; defines safe operating range in 24V bus applications.
R_DS(on) @ V_GS=10V	0.045 Ω - Enables ≤165 mW conduction loss at 3.7A, critical for thermally constrained DC–DC stages.
I_D (continuous, T_A=70°C)	4.0 A - Sustained current capability on standard FR4 PCB without forced airflow.
Q_g	27 nC - Total gate charge determines driver strength requirement; compatible with low-power gate drivers.
t_r/t_f	4.5 ns / 8 ns - Fast edge rates reduce switching losses in high-frequency (>500 kHz) PWM designs.
V_GS(th)	1.0 V (min) - Ensures full enhancement with 1.8V/3.3V logic, eliminating need for level-shifting circuitry.
R_θJA (FR4)	70 °C/W - Thermal resistance measured on FR4 board; supports 1.8W dissipation at ΔT = 126°C above ambient.

Pinout & Package

Package: SOIC-8 (3.9mm × 4.9mm, 1.27mm pitch), surface-mount, low-profile design per Zetex package drawing ZXM64N03X.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts logic-level input; 100nA leakage ensures low standby current.
2 (S)	Source	Reference node for gate drive; tied to power ground in low-side switch configuration.
3 (D)	Drain	High-current output path; internally connected to 3 parallel drain pins (pins 4, 5, 6) for reduced inductance.
4,5,6 (D)	Drain (multi-pin)	Shared drain terminals reduce package inductance and improve current sharing in pulsed operation.
7 (S)	Source	Second source connection; improves thermal and electrical path to PCB copper pour.
8 (G)	Gate	Redundant gate pin for improved layout symmetry and reduced gate loop inductance.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.0V min enables direct interface with 1.8V/3.3V MCUs without external level shifters.
Low R_DS(on) at 4.5V	0.060 Ω @ V_GS = 4.5V, I_D = 1.9A - maintains efficiency in battery-powered systems with limited gate drive voltage.
Integrated body diode	V_SD = 0.95V @ I_S = 3.7A - supports synchronous rectification and freewheeling in buck converters.
Fast reverse recovery	t_rr = 24.5 ns, Q_rr = 19.1 nC - minimizes shoot-through risk and EMI in hard-switched topologies.
SOIC-8 thermal performance	R_θJA = 70°C/W on FR4 - exceeds typical SOIC-8 MOSFETs by ~25%, enabling higher continuous current in space-constrained layouts.

Applications

Buck Converter Power Stage

Load Disconnect Switch

Use Scenario: High-efficiency 5V-to-3.3V point-of-load converter in industrial PLC modules.

IC Role / Device Role: Low-side synchronous rectifier switch with integrated body diode.

Use Value: 0.045Ω R_DS(on) reduces conduction loss by >30% vs. comparable 30V MOSFETs, improving thermal margin at 3A load.

Use Scenario: Controlled power-up sequencing for FPGA I/O banks requiring isolated 1.2V/1.8V rails.

IC Role / Device Role: Single-pole, single-throw (SPST) electronic fuse with fast turn-off.

Use Value: 20.5ns t_d(off) and 8ns t_f enable sub-microsecond fault isolation, preventing downstream damage during overcurrent events.

Motor Driver Half-Bridge

USB-C Power Delivery Load Switch

Use Scenario: 12V brushed DC motor control in portable medical pumps.

IC Role / Device Role: Low-side switch in H-bridge configuration with PWM duty cycle up to 95%.

Use Value: 30A pulsed drain current rating supports peak torque surges without derating; Q_g = 27nC allows 1MHz PWM without excessive gate driver power.

Use Scenario: Inrush current limiting and hot-swap protection for USB-C PD 3.0 20V/5A power paths.

IC Role / Device Role: Reverse-polarity protected, low-R_DS(on) load switch with body-diode forward conduction.

Use Value: V_SD = 0.95V ensures <100mV forward drop at 3A, meeting USB-C voltage tolerance specs while minimizing heat generation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025LSD-13 (Diodes Inc.)	R_DS(on) = 0.025Ω @ 4.5V (lower), but SO-8 package has R_θJA = 80°C/W (worse thermal).	Better efficiency at light loads; less suitable for sustained 4A operation on FR4.	Prefer for ultra-low-loss 3.3V-driven apps where thermal headroom exists.
SI2302DS-T1-GE3 (Vishay)	R_DS(on) = 0.085Ω @ 4.5V (higher), SOT-23 package limits I_D to 2.6A continuous.	Smaller footprint but lower current capacity; unsuitable for >3A DC–DC outputs.	Select only when board space is critical and load current remains below 2.5A.

Compared with DMN3025LSD-13 and SI2302DS-T1-GE3, ZXM64N03XTC delivers balanced performance: superior thermal resistance over the SOT-23 alternative and more robust SOIC-8 packaging than the Diodes part, making it optimal for industrial 4A-class power switches.

Availability

ZXM64N03XTC is available at Aetrix Electronics and suitable for DC–DC converters, load disconnect switches, motor control circuits, and USB-C power delivery systems requiring stable component supply and long-term manufacturability.

Supply support for ZXM64N03XTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Zetex Semiconductors plc (now part of Diodes Incorporated) was a UK-based designer of high-performance analog and discrete semiconductors, focused on innovation in power efficiency and signal integrity.

ZXM64N03XTC belongs to Zetex's logic-level MOSFET product line, engineered specifically for high-density, low-voltage power management in space- and thermally-constrained embedded systems.

FAQ

What is the maximum continuous drain current at 85°C ambient?

At T_A = 85°C, the device supports 3.2A continuous drain current. This is derived from linear derating: 4.0A at 70°C, with 14.4 mW/°C derating factor and 1.8W P_D at 25°C, yielding 1.8W − (14.4 mW/°C × 60°C) = 0.936W, and I_D = √(P_D/R_DS(on)) ≈ 3.2A using R_DS(on) = 0.060Ω.

Does ZXM64N03XTC have avalanche rating?

No. The datasheet does not specify unclamped inductive switching (UIS) or single-pulse avalanche energy (E_AS). It is rated for repetitive pulsed drain current (I_DM = 30A) under specified test conditions but lacks formal avalanche ruggedness characterization.

Can this MOSFET be used in a high-side configuration with 5V gate drive?

No. As an N-channel device, high-side operation requires gate voltage ≥ source voltage + V_GS(th). With only 5V available, it cannot sustain sufficient V_GS when source rises toward 24V; a dedicated high-side driver or P-channel alternative is required.

Is the body diode suitable for reverse polarity protection?

Yes. The integrated body diode conducts forward at V_SD = 0.95V and blocks reverse current up to V_BR(DSS) = 30V. When placed in series with the power rail (source to input, drain to load), it prevents damage from −24V misconnection, provided I_S stays within 2.4A continuous rating.

ZXM64N03XTC Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 45mOhm @ 3.7A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 950 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-MSOP

ZXM64N03XTC FAQ

1.How can I place an order for ZXM64N03XTC through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXM64N03XTC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXM64N03XTC reliable?

The price and inventory of ZXM64N03XTC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXM64N03XTC is usually 5 days.

3.What payment methods are accepted for ZXM64N03XTC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXM64N03XTC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXM64N03XTC?

ZXM64N03XTC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXM64N03XTC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXM64N03XTC?

For technical support, including ZXM64N03XTC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXM64N03XTC requirements.

6.How does Aetrix verify that ZXM64N03XTC is sourced from the original manufacturer or authorized distributors?

All ZXM64N03XTC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXM64N03XTC meets industry standards.

7.What is the process for return or replacement of ZXM64N03XTC?

All ZXM64N03XTC units undergo pre-shipment inspection (PSI). If there is an issue with ZXM64N03XTC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXM64N03XTC part is unused and in its original packaging.

Return procedure for ZXM64N03XTC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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