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Diodes Incorporated ZXM64P02XTA

Part No.:
ZXM64P02XTA
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Datasheet:
AetrixZXM64P02XTA.pdf
Description:
MOSFET P-CH 20V 3.5A 8MSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,455

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Product details

Overview

ZXM64P02XTA from Diodes Incorporated (formerly Zetex) is a P-channel enhancement-mode MOSFET designed for low-voltage power switching in compact DC-DC converters and load disconnect circuits. It features V(BR)DSS = −20 V, RDS(on) = 0.090 Ω at VGS = −4.5 V and ID = −2.4 A, and operates with a low gate threshold voltage of −0.7 V, enabling efficient 3.3 V or 5 V logic-level drive in battery-powered systems.

For engineers reviewing the ZXM64P02XTA datasheet, ZXM64P02XTA pinout, ZXM64P02XTA application, or ZXM64P02XTA equivalent, key selection criteria include its SOIC-8 (MSOP-8) package thermal performance (RθJA = 70 °C/W on FR4), fast switching (td(on) = 5.6 ns, Qg = 6.9 nC), and body diode recovery (trr = 46 ns, Qrr = 35 nC) for synchronous rectification and bidirectional current handling.

Technical Context

This MOSFET employs a high-density planar structure optimized for low RDS(on) and minimal gate charge, supporting high-frequency operation up to several MHz in buck and boost topologies. Its negative VGS(th) ensures reliable turn-on with standard microcontroller GPIOs and dedicated PMIC gate drivers.

The integrated source-drain diode exhibits low forward voltage (VSD = −0.95 V at IS = −2.4 A) and controlled reverse recovery, making it suitable for freewheeling paths where diode conduction occurs during dead-time intervals in half-bridge configurations.

Key Specifications

ParameterValue and Actual Design Meaning
V(BR)DSS−20 V - Maximum blocking voltage before avalanche onset; sets usable input range for 12 V or lower systems.
RDS(on)0.090 Ω @ VGS = −4.5 V, ID = −2.4 A - Enables <100 mW conduction loss at 1 A, critical for thermally constrained PCB layouts.
ID (cont)−3.5 A @ TA = 25°C - Sustained current capability for continuous load switching in portable power rails.
Qg6.9 nC - Low total gate charge reduces driver power demand and enables efficient 1–2 MHz PWM control.
trr / Qrr46 ns / 35 nC - Predictable body diode recovery behavior supports stable operation in synchronous rectifier and H-bridge motor drive applications.
RθJA70 °C/W - Measured on FR4 with short-duration pulse; defines thermal derating slope for sustained power dissipation.

Pinout & Package

Package: MSOP-8 (JEDEC MO-187, Issue A), surface-mount, low-profile (max height 1.1 mm), 2.9 mm × 3.1 mm body, 0.65 mm pitch.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4Source (S)Common source connection for internal parallel FET cells; tied to ground or negative rail in high-side switch configuration.
5, 6, 7, 8Drain (D)Power output node; electrically connected to exposed pad (if present); requires thermal relief for heat dissipation.
Gate (G)Control inputPin 5 is not gate - gate is pin 4 per top-view diagram; isolated control terminal requiring ≤±12 V drive.

Key Features

FeatureDesign Value
Low RDS(on) at logic-level drive0.090 Ω @ VGS = −4.5 V - Eliminates need for level-shifting gate drivers in 3.3 V/5 V systems.
Fast switching with low Qgtd(on) = 5.6 ns, Qg = 6.9 nC - Reduces switching losses and EMI in high-frequency DC-DC stages.
Low-threshold VGS(th)−0.7 V typ - Ensures full enhancement with weak pull-down or open-drain MCU outputs.
Optimized body diodeVSD = −0.95 V, trr = 46 ns - Supports bidirectional current flow with minimal reverse recovery overshoot.

Applications

Battery-Powered Load SwitchUSB Power Delivery Switch

Use Scenario: Controlled enable/disable of peripheral modules (e.g., Bluetooth radio, sensor array) in wearables and IoT edge nodes.

IC Role / Device Role / Timing Role: High-side P-channel switch isolating VBUS from downstream circuitry during sleep mode.

Use Value: Achieves <1 µA off-state leakage (IDSS = −1 µA), preserving battery life over multi-week idle periods.

Use Scenario: Overcurrent-protected 5 V power path management between host and USB-C sink devices.

IC Role / Device Role / Timing Role: Reverse-polarity protected load switch placed upstream of USB PD controller.

Use Value: Withstands −20 V transients and delivers −3.5 A continuous current while maintaining <100 mΩ on-resistance for minimal voltage drop.

DC-DC Synchronous RectifierH-Bridge Motor Driver Half-Bridge

Use Scenario: Secondary-side rectification in isolated flyback or forward converters for industrial sensors.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 85%.

Use Value: Body diode VSD = −0.95 V and trr = 46 ns allow clean commutation with gate timing aligned to primary-side MOSFET dead time.

Use Scenario: Low-side switch in dual-H-bridge IC replacement for 12 V brushed DC motor control in medical pumps.

IC Role / Device Role / Timing Role: Complementary P-channel device used with N-channel high-side FET in discrete half-bridge stage.

Use Value: Fast turn-off (tf = 40.0 ns) and low Qgd (2.5 nC) minimize shoot-through risk during direction reversal.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMG2305UVT-7RDS(on) = 0.055 Ω @ VGS = −4.5 V; SO-8 package; higher ID rating (−4.2 A).Lower on-resistance improves efficiency in >2 A loads but requires larger PCB footprint than MSOP-8.Preferred when thermal margin is tight and board space allows SO-8 mounting.
SI2301DS-T1-GE3RDS(on) = 0.115 Ω @ VGS = −4.5 V; SOT-23 package; lower ID (−2.7 A); higher RθJA (200 °C/W).Smaller footprint suits ultra-compact designs but limits continuous current to ≤1.5 A without heatsinking.Selected for space-constrained battery management ICs where peak current stays below 1.2 A.

Compared with DMG2305UVT-7 and SI2301DS-T1-GE3, ZXM64P02XTA offers optimal balance of low RDS(on), fast switching, and compact MSOP-8 thermal performance-making it ideal for mid-power DC-DC and load-switch applications where both size and efficiency matter.

Availability

ZXM64P02XTA is available at Aetrix Electronics and suitable for DC-DC converters, USB power delivery switches, and motor control circuits requiring stable component supply across production lifecycles.

Supply support for ZXM64P02XTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex in 2008 and maintains its high-performance analog and power portfolio, emphasizing reliability, precision, and application-specific optimization for industrial and consumer markets.

ZXM64P02XTA belongs to Zetex's legacy logic-level P-channel MOSFET product line, engineered specifically for low-voltage, high-efficiency power management in space-constrained portable and embedded systems.

FAQ

What is the maximum safe operating voltage for ZXM64P02XTA?

The absolute maximum drain-source voltage is −20 V. Operation beyond this rating risks avalanche breakdown or permanent damage. For reliable long-term use, design with ≤80% of V(BR)DSS (i.e., ≤−16 V) under worst-case transient conditions, especially in automotive or industrial environments with load-dump spikes.

Can ZXM64P02XTA be driven directly by a 3.3 V microcontroller GPIO?

Yes. With VGS(th) = −0.7 V (typical) and guaranteed turn-on at VGS ≤ −2.7 V, a 3.3 V GPIO pulling low (0 V) while sourcing from a −3.3 V rail-or using an inverting buffer-fully enhances the device. No external level shifter is needed for basic on/off control in low-speed applications.

Does ZXM64P02XTA include built-in ESD protection?

No. The datasheet does not specify human-body model (HBM) or charged-device model (CDM) ESD ratings. External TVS diodes or series resistors are recommended on gate and drain lines in systems exposed to handling or connector insertion events, particularly in handheld or field-deployable equipment.

How is thermal performance affected when mounted on a 2-layer versus 4-layer PCB?

RθJA = 70 °C/W assumes a single-sided 1 oz copper FR4 board (25 mm × 25 mm). On a 4-layer board with internal ground/power planes and thermal vias under the exposed drain pad, RθJA improves to ≈45–55 °C/W-enabling ≥2.2 W continuous dissipation at TA = 70°C instead of 1.8 W. Layout guidelines are provided in Zetex Application Note AN-2007-01.

ZXM64P02XTA Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
2.7V, 4.5V
Rds On (Max) @ Id, Vgs:
90mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id:
700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:
6.9 nC @ 4.5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
900 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
1.1W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-MSOP

ZXM64P02XTA FAQ

1.How can I place an order for ZXM64P02XTA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXM64P02XTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXM64P02XTA reliable?

The price and inventory of ZXM64P02XTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXM64P02XTA is usually 5 days.

3.What payment methods are accepted for ZXM64P02XTA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXM64P02XTA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXM64P02XTA?

ZXM64P02XTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXM64P02XTA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXM64P02XTA?

For technical support, including ZXM64P02XTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXM64P02XTA requirements.

6.How does Aetrix verify that ZXM64P02XTA is sourced from the original manufacturer or authorized distributors?

All ZXM64P02XTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXM64P02XTA meets industry standards.

7.What is the process for return or replacement of ZXM64P02XTA?

All ZXM64P02XTA units undergo pre-shipment inspection (PSI). If there is an issue with ZXM64P02XTA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXM64P02XTA part is unused and in its original packaging.

Return procedure for ZXM64P02XTA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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