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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZXM64P02XTC

Name: ZXM64P02XTC
Brand: Diodes Incorporated
SKU: ZXM64P02XTC
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXM64P02XTC

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Datasheet:: ZXM64P02XTC.pdf

Description:: MOSFET P-CH 20V 3.5A 8MSOP

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Inventory:9,665

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Product details

Overview

ZXM64P02XTC from Diodes Incorporated (formerly Zetex) is a P-channel enhancement-mode MOSFET in MSOP-8 package, rated for -20 V V(BR)DSS, 0.090 Ω RDS(on) at VGS = -4.5 V and ID = -2.4 A, and -3.5 A continuous drain current at TA = 25°C. It serves as a low-voltage power switch in DC-DC converters, load disconnect circuits, and motor control stages where fast switching and low gate drive are critical.

For engineers reviewing the ZXM64P02XTC datasheet, ZXM64P02XTC pinout, ZXM64P02XTC application, or ZXM64P02XTC equivalent, key selection criteria include verified RDS(on) at -4.5 V, SOIC-compatible MSOP-8 thermal performance (RθJA = 70 °C/W with FR4), body diode recovery time (trr = 46 ns), and gate charge (Qg = 6.9 nC) for synchronous buck high-side or low-side switching.

Technical Context

This MOSFET employs a high-density trench structure optimized for low on-resistance and fast switching-enabling high-efficiency operation in 3.3 V and 5 V input power rails. Its -0.7 V typical VGS(th) ensures reliable turn-on with standard logic-level gate drivers.

The integrated source-drain diode exhibits VSD = -0.95 V at IS = -2.4 A and trr = 46 ns, supporting bidirectional current handling in H-bridge motor drives and reverse-polarity protection. Dynamic parameters-including Ciss = 900 pF, Crss = 150 pF, and td(off) = 45.5 ns-are characterized at VDS = -15 V and RG = 6.0 Ω.

Key Specifications

Parameter	Value and Actual Design Meaning
V(BR)DSS	-20 V - Maximum blocking voltage before avalanche conduction in reverse-biased drain-source path
RDS(on)	0.090 Ω @ VGS = -4.5 V, ID = -2.4 A - Enables <0.5 W conduction loss at 2.4 A in compact power stages
ID (cont)	-3.5 A @ TA = 25°C - Supports sustained 3.5 A load switching in thermally managed PCB layouts
Qg	6.9 nC @ VDS = -16 V, VGS = -4.5 V - Determines gate driver current requirement for <50 ns switching transitions
trr	46 ns @ IF = -2.4 A, di/dt = 100 A/µs - Limits reverse recovery losses in synchronous rectification and PWM motor control
RθJA	70 °C/W - Measured on FR4 PCB; defines thermal derating slope (14.4 mW/°C) above 25°C ambient
VGS(th)	-0.7 V typ. @ ID = -250 µA - Ensures full enhancement with 3.3 V GPIO or low-voltage controller outputs

Pinout & Package

Package: MSOP-8 (JEDEC MO-187, Issue A), 3.0 × 3.0 mm body, 0.65 mm pitch, low-profile surface-mount.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source node; internally bonded to four pins for reduced resistance and improved thermal spreading
5, 6, 7, 8	Drain (D)	Power output node; quad-drain configuration supports high pulsed current (IDM = -19 A)
Gate (G)	Control input	Pin 5 is not gate - gate is pin 4 per top-view diagram; single gate terminal accepts logic-level drive with Qg = 6.9 nC

Key Features

Feature	Design Value
Low RDS(on)	0.090 Ω at -4.5 V enables <0.5 W conduction loss at 2.4 A, reducing heatsink need in space-constrained DC-DC modules
Fast switching	td(off) = 45.5 ns and tf = 40.0 ns allow >1 MHz PWM operation with minimal switching loss in buck regulators
Low threshold	VGS(th) = -0.7 V ensures full turn-on from 3.3 V microcontroller I/O without level-shifting circuitry
Low gate drive	Qg = 6.9 nC permits use of low-power gate drivers (e.g., TC4420) while maintaining sub-50 ns edge rates
MSOP-8 package	3.0 × 3.0 mm footprint with exposed drain pad improves thermal transfer over SOIC-8, supporting 1.8 W PD at 25°C

Applications

Bidirectional Motor Control

USB Power Delivery Switch

Use Scenario: H-bridge driver for 5 V brushed DC motors in portable medical pumps and robotics.

IC Role / Device Role / Timing Role: Low-side P-channel switch enabling regenerative braking via body diode conduction and controlled turn-off timing.

Use Value: 46 ns trr and -0.95 V VSD minimize shoot-through risk and conduction loss during direction reversal.

Use Scenario: Reverse-polarity and overcurrent protection in USB-C PD sink applications with 5–20 V input range.

IC Role / Device Role / Timing Role: Load switch controlling VBUS path with fast fault response (<100 ns off-time) and low quiescent current.

Use Value: -20 V rating and ±12 V VGS tolerance withstand transient surges; 0.090 Ω RDS(on) limits voltage drop below 200 mV at 2 A.

Point-of-Load DC-DC Converter

Hot-Swap Controller Interface

Use Scenario: Synchronous rectifier in 3.3 V output buck converter for FPGA core supplies.

IC Role / Device Role / Timing Role: High-side synchronous FET driven by dedicated gate controller with precise dead-time management.

Use Value: 6.9 nC Qg and 150 pF Crss enable tight control of Miller plateau crossing, reducing cross-conduction risk.

Use Scenario: Inrush current limiter and fault isolation switch in industrial backplane hot-swap modules.

IC Role / Device Role / Timing Role: Controlled turn-on switch with soft-start capability enabled by gate capacitance and external RC timing.

Use Value: -0.7 V VGS(th) allows direct biasing from hot-swap controller reference, eliminating discrete level-shifters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG2305UVT-7	RDS(on) = 0.055 Ω @ -4.5 V but rated only to -12 V V(BR)DSS; higher Ciss (1200 pF)	Not suitable for -20 V bus protection; better for 3.3 V logic-level loads with tighter RDS(on) tolerance	Select when VDS stress <12 V and lower conduction loss is prioritized over voltage margin
SI2305DS-T1-E3	RDS(on) = 0.075 Ω @ -4.5 V; SO-8 package (larger footprint); RθJA = 113 °C/W (no thermal pad)	Lower thermal performance limits continuous current to ~2.2 A on same PCB; less suitable for high-frequency switching	Select only for legacy SO-8 board compatibility where MSOP-8 rework is impractical

Compared with DMG2305UVT-7 and SI2305DS-T1-E3, ZXM64P02XTC uniquely balances -20 V rating, 0.090 Ω RDS(on), and MSOP-8 thermal efficiency-making it optimal for 5 V–12 V power switches requiring both voltage headroom and compact layout.

Availability

ZXM64P02XTC is available at Aetrix Electronics and suitable for DC-DC converters, USB power delivery systems, motor control modules, and hot-swap interfaces requiring stable component supply across industrial and consumer production cycles.

Supply support for ZXM64P02XTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex in 2008 and maintains its high-performance analog and power semiconductor portfolio, focusing on efficiency-critical discrete components for power management and signal integrity.

ZXM64P02XTC belongs to Zetex's "X-Series" high-density MOSFET family, engineered specifically for low-voltage, high-switching-frequency power conversion where RDS(on), Qg, and trr must be simultaneously optimized.

FAQ

What is the maximum safe operating junction temperature for ZXM64P02XTC?

The device is rated for Tj = -55°C to +150°C. Absolute maximum junction temperature is +150°C; operation beyond this risks permanent parametric shift or bond-wire failure. Derating begins at 25°C ambient using the 14.4 mW/°C linear factor for the 1.8 W PD rating on FR4.

Can ZXM64P02XTC be used in avalanche mode?

No-ZXM64P02XTC is not rated for repetitive avalanche operation. The -20 V V(BR)DSS is a DC breakdown limit under static conditions; no energy rating (EAS) or SOA curve is provided for unclamped inductive switching. Use external clamping or snubbers for inductive loads.

Is the MSOP-8 package lead-free and RoHS compliant?

Yes-ZXM64P02XTC conforms to RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level (MSL) 1. The device uses matte tin-plated leads and meets IPC/JEDEC J-STD-006 solderability requirements for Pb-free reflow profiles.

Does the body diode support continuous bidirectional current in H-bridge configurations?

Yes-the integrated source-drain diode is rated for -2.0 A continuous forward current (IS) and -19 A pulsed (ISM). At Tj = 25°C, VSD = -0.95 V at -2.4 A, and trr = 46 ns enables efficient freewheeling in PWM-driven bridges without external diodes.

ZXM64P02XTC Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 3.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.7V, 4.5V

Rds On (Max) @ Id, Vgs:: 90mOhm @ 2.4A, 4.5V

Vgs(th) (Max) @ Id:: 700mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 6.9 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 900 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-MSOP

ZXM64P02XTC FAQ

1.How can I place an order for ZXM64P02XTC through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXM64P02XTC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXM64P02XTC reliable?

The price and inventory of ZXM64P02XTC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXM64P02XTC is usually 5 days.

3.What payment methods are accepted for ZXM64P02XTC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXM64P02XTC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXM64P02XTC?

ZXM64P02XTC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXM64P02XTC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXM64P02XTC?

For technical support, including ZXM64P02XTC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXM64P02XTC requirements.

6.How does Aetrix verify that ZXM64P02XTC is sourced from the original manufacturer or authorized distributors?

All ZXM64P02XTC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXM64P02XTC meets industry standards.

7.What is the process for return or replacement of ZXM64P02XTC?

All ZXM64P02XTC units undergo pre-shipment inspection (PSI). If there is an issue with ZXM64P02XTC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXM64P02XTC part is unused and in its original packaging.

Return procedure for ZXM64P02XTC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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