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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZXM64P03XTA

Name: ZXM64P03XTA
Brand: Diodes Incorporated
SKU: ZXM64P03XTA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXM64P03XTA

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Datasheet:: ZXM64P03XTA.pdf

Description:: MOSFET P-CH 30V 3.8A 8MSOP

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Product details

Overview

ZXM64P03XTA from Diodes Incorporated is a 30V P-channel enhancement-mode MOSFET in MSOP-8 package, featuring 75 mΩ R_DS(on) at V_GS = −10 V, −3.8 A continuous drain current at 25°C, and fast switching (t_d(off) = 40 ns, Q_g = 46 nC), deployed as a high-efficiency synchronous rectifier and load switch in DC–DC converters.

For engineers reviewing the ZXM64P03XTA datasheet, ZXM64P03XTA pinout, ZXM64P03XTA application, or ZXM64P03XTA equivalent, key selection criteria include verified gate threshold (V_GS(th) = −1.0 V), body diode forward voltage (V_SD = −0.95 V), thermal resistance (R_θJA = 70 °C/W under PCB condition), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This MOSFET employs a trench-gate structure optimized for low conduction loss and rapid turn-off, enabling efficient operation in high-frequency buck converters and reverse-polarity protection circuits. Its −30 V V_BR(DSS), ±20 V V_GS rating, and 100 mΩ R_DS(on) at −4.5 V gate drive support robust 3.3 V/5 V logic-level control in space-constrained power rails.

The device integrates a low-V_SD body diode (−0.95 V) with 30.2 ns reverse recovery time and 27.8 nC Q_rr, reducing shoot-through risk and improving efficiency in synchronous rectification. Thermal performance is validated per JESD51-2: R_θJL = 39.8 °C/W to solder point confirms suitability for thermally dense layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	−30 V: Maximum blocking voltage before avalanche; ensures safe operation in 24 V automotive and industrial bus systems.
R_DS(on)	75 mΩ @ V_GS = −10 V: Low conduction loss at full gate drive; enables ≤0.68 W I²R loss at −3.8 A.
I_D	−3.8 A @ T_A = 25°C: Continuous current capability under standard FR4 PCB mounting; supports medium-power load switching.
V_GS(th)	−1.0 V (min): Low threshold enables reliable turn-on with 3.3 V microcontroller GPIOs without level-shifting.
Q_g	46 nC: Total gate charge determines driver strength requirement; compatible with standard low-side gate drivers.
t_d(off)	40 ns: Turn-off delay time measured at V_DD = −15 V; critical for minimizing dead-time losses in synchronous converters.
R_θJA	70 °C/W (Note 6): Junction-to-ambient thermal resistance on FR4; allows ~15°C rise at 1.8 W dissipation.

Pinout & Package

Package: MSOP-8 (3.0 × 4.9 mm, 0.65 mm pitch), surface-mount, lead-free, RoHS-compliant, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5	Drain (D)	Five parallel internal drain connections reduce parasitic inductance and improve current sharing in high-di/dt applications.
6	Gate (G)	Single gate input; requires <46 nC charge for full enhancement; compatible with 3.3 V/5 V logic-level drivers.
7, 8	Source (S)	Two-source terminals minimize source inductance and stabilize gate drive loop during fast switching transitions.

Key Features

Feature	Design Value
Low R_DS(on) at −4.5 V	100 mΩ enables direct interface with 5 V microcontrollers and reduces conduction loss in battery-powered systems.
AEC-Q101 qualified	Validated for automotive temperature range (−40°C to +125°C junction), vibration, and ESD robustness per stress test requirements.
Fast switching speed	40 ns t_d(off) and 29.2 ns t_f minimize transition losses in >500 kHz DC–DC topologies.
Green construction	Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); compliant with EU Directive 2011/65/EU (RoHS 2).

Applications

DC–DC Converters

Reverse Polarity Protection

Use Scenario: Used as synchronous rectifier in 12 V → 3.3 V buck converter operating at 1 MHz.

IC Role / Device Role / Timing Role: P-channel MOSFET replaces Schottky diode to reduce forward drop and improve efficiency by ≥3% at 2 A load.

Use Value: 75 mΩ R_DS(on) and 0.95 V V_SD lower conduction loss versus discrete diode; 46 nC Q_g ensures clean gate drive with minimal overshoot.

Use Scenario: Placed between input supply and system rail to block reverse current during hot-swap or battery insertion.

IC Role / Device Role / Timing Role: High-side switch configured with gate driven by charge pump or dedicated controller to enable/disconnect power path.

Use Value: −30 V V_BR(DSS) withstands transient spikes up to ±25 V; low V_GS(th) ensures fast turn-on during fault recovery.

Motor Control (H-Bridge)

Load Switching

Use Scenario: Integrated into half-bridge high-side position of 24 V brushed DC motor driver for robotics.

IC Role / Device Role / Timing Role: P-channel upper switch controlled via bootstrap or isolated gate driver to manage bidirectional current flow.

Use Value: 100 mΩ R_DS(on) at −4.5 V reduces heat generation during PWM operation; 30.2 ns t_rr limits cross-conduction risk during commutation.

Use Scenario: Enables/disables power to peripheral module (e.g., sensor array) in portable medical device.

IC Role / Device Role / Timing Role: Low-threshold P-MOSFET used with pull-up resistor and MCU GPIO for controlled soft-start and inrush limiting.

Use Value: −1.0 V V_GS(th) guarantees turn-on at 3.3 V logic; 2.3 S g_fs provides stable transconductance across temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG3415L-7	R_DS(on) = 42 mΩ @ −4.5 V; higher ID (−4.5 A); smaller TSOP-6 package	Better suited for ultra-compact designs where board area is constrained but thermal margin is adequate	Select when lower R_DS(on) and smaller footprint outweigh need for MSOP-8 mechanical compatibility
SI2301DDS-T1-GE3	R_DS(on) = 115 mΩ @ −4.5 V; lower Q_g (12 nC); SOT-23 package	Lower gate drive demand suits low-power always-on circuits; reduced current handling limits use to ≤1.5 A loads	Prefer for cost-sensitive, low-current applications where fast switching is secondary to minimal gate drive energy

Compared with DMG3415L-7 and SI2301DDS-T1-GE3, ZXM64P03XTA offers balanced R_DS(on), gate charge, and thermal performance in an industry-standard MSOP-8-ideal for mid-power automotive and industrial modules requiring AEC-Q101 validation and layout flexibility.

Availability

ZXM64P03XTA is available at Aetrix Electronics and suitable for DC–DC converters, reverse polarity protection circuits, and motor control subsystems requiring stable component supply and automotive-grade reliability.

Supply support for ZXM64P03XTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions.

The ZXM64P03XTA belongs to Diodes' ZXM series of logic-level P-channel MOSFETs, engineered for high-efficiency power conversion and robust protection in automotive, industrial, and computing applications.

FAQ

Is ZXM64P03XTA suitable for 3.3 V gate drive?

Yes. With a minimum gate threshold voltage of −1.0 V and R_DS(on) = 100 mΩ at V_GS = −4.5 V, it fully enhances using standard 3.3 V logic outputs when paired with appropriate pull-up configuration. Gate drive must ensure V_GS ≤ −3.3 V for reliable saturation under load.

What is the maximum junction temperature and how is it derated?

The absolute maximum junction temperature is +150°C. Power derating begins at +25°C ambient: 14.4 mW/°C for PD = 1.8 W (Note 6), yielding zero dissipation at +162°C. Derating assumes FR4 PCB mounting with specified copper coverage per JESD51-2.

Does ZXM64P03XTA have integrated ESD protection?

No integrated ESD protection circuitry is specified. The device meets HBM ESD rating of ±2 kV per AEC-Q101, but external TVS or RC filtering is recommended on gate and drain lines in noisy environments such as automotive power supplies.

Can ZXM64P03XTA be used in linear regulation mode?

It is not optimized for linear mode. While rated for continuous operation up to 1.8 W, its SOA curve is limited by second breakdown and thermal instability above 10 V V_DS. Use only in saturated switching applications-not as a pass element in LDO or analog regulators.

ZXM64P03XTA Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 3.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 75mOhm @ 2.4A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 46 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 825 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-MSOP

ZXM64P03XTA FAQ

1.How can I place an order for ZXM64P03XTA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXM64P03XTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXM64P03XTA reliable?

The price and inventory of ZXM64P03XTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXM64P03XTA is usually 5 days.

3.What payment methods are accepted for ZXM64P03XTA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXM64P03XTA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXM64P03XTA?

ZXM64P03XTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXM64P03XTA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXM64P03XTA?

For technical support, including ZXM64P03XTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXM64P03XTA requirements.

6.How does Aetrix verify that ZXM64P03XTA is sourced from the original manufacturer or authorized distributors?

All ZXM64P03XTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXM64P03XTA meets industry standards.

7.What is the process for return or replacement of ZXM64P03XTA?

All ZXM64P03XTA units undergo pre-shipment inspection (PSI). If there is an issue with ZXM64P03XTA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXM64P03XTA part is unused and in its original packaging.

Return procedure for ZXM64P03XTA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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