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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZXM66P02N8TA

Name: ZXM66P02N8TA
Brand: Diodes Incorporated
SKU: ZXM66P02N8TA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXM66P02N8TA

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: ZXM66P02N8TA.pdf

Description:: MOSFET P-CH 20V 6.4A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:9,435

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Product details

Overview

ZXM66P02N8TA from Diodes Incorporated is a 20V P-channel enhancement-mode MOSFET in SO-8 package, rated for -8.0A continuous drain current at V_GS = -4.5V, with R_DS(on) = 0.025Ω and fast switching (t_D(off) = 118.4ns). It delivers high pulse current handling in linear mode and supports low-voltage power management in DC-DC converters and inrush protection circuits.

For engineers reviewing the ZXM66P02N8TA datasheet, ZXM66P02N8TA pinout, ZXM66P02N8TA application, or ZXM66P02N8TA equivalent, key selection criteria include verified R_DS(on) at -4.5V, SO-8 thermal performance (R_θJA = 50°C/W), body diode forward voltage (V_SD = 0.95V), and gate charge (Q_g = 43.3nC) for synchronous buck or load-switch designs.

Technical Context

This MOSFET employs a proprietary high-density structure-not trenchFET-enabling intrinsically higher linear-mode pulse current capability (I_DM = -28A) and lower R_DS(on) versus comparable P-channel devices. Its gate threshold voltage (V_GS(th) = -0.7V) ensures reliable turn-on with standard logic-level drive.

Dynamic parameters are production-tested: C_iss = 2068pF, C_oss = 1038pF, and Q_gd/Q_gs ratio of ~6.1 supports efficient hard-switching operation. The integrated body diode exhibits t_rr = 23.1ns and Q_rr = 12.2nC, suitable for synchronous rectification in 12V/5V point-of-load converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	-20V - Maximum blocking voltage for 12V rail protection and 5V bus isolation
R_DS(on)	0.025Ω @ V_GS = -4.5V - Enables <125mW conduction loss at 5A load
I_D	-8.0A continuous - Supports 6.5A derated output at 70°C ambient on 25mm×25mm PCB
Q_g	43.3nC - Determines gate driver current requirement (~1.4mA avg. for 1MHz switching)
t_D(off)	118.4ns - Sets minimum dead-time margin in synchronous buck topologies
V_SD	0.95V @ I_S = -3.2A - Limits reverse conduction loss during light-load discontinuous mode
R_θJA	50°C/W - Confirmed for 1oz copper FR4; enables 1.56W dissipation at T_A = 70°C

Pinout & Package

Package: SO-8 (Surface-mount, 1.27mm pitch, 5.0mm × 4.0mm footprint, 1.75mm max height, UL 94V-0 molded plastic).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; requires -4.5V to fully enhance; Q_gs = 3.5nC defines Miller plateau duration
S	Source	Reference node for gate drive; connects to system ground or high-side return path in load switch
D	Drain	Power output node; handles bidirectional current via body diode during freewheeling
1–4, 6–8	Drain (internally paralleled)	Multi-pin drain configuration reduces package inductance and improves current sharing in high-di/dt applications

Key Features

Feature	Design Value
High pulse current in linear mode	I_DM = -28A - Enables robust inrush limiting without thermal runaway during hot-plug events
Low R_DS(on) at logic-level drive	0.025Ω @ -4.5V - Eliminates need for level-shifting gate drivers in 5V/3.3V control systems
Fast switching with low Q_gd/Q_gs	Q_gd = 21.3nC, Q_gs = 3.5nC - Reduces Miller-induced shoot-through risk in half-bridge configurations
SO-8 thermal performance	R_θJA = 50°C/W - Achieves 1.56W dissipation on standard PCB without heatsink or airflow

Applications

Inrush Protection Circuit

DC-DC Converter High-Side Switch

Use Scenario: Prevents surge current during hot-plug insertion of USB-C PD modules or PCIe add-in cards.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as active low-side switch with gate driven by microcontroller GPIO.

Use Value: 0.025Ω R_DS(on) limits inrush voltage drop to <125mV at 5A, while -28A pulse rating withstands 10ms surges.

Use Scenario: High-side power switch in non-synchronous buck converter supplying 3.3V to FPGA core rails.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement in 500kHz buck stage; body diode conducts during low-duty-cycle freewheeling.

Use Value: V_SD = 0.95V and t_rr = 23.1ns reduce reverse recovery loss versus discrete Schottky alternatives.

Load Disconnect Switch

Motor Driver Half-Bridge Leg

Use Scenario: Isolates backup battery from main system during deep sleep or fault conditions in portable medical monitors.

IC Role / Device Role / Timing Role: Low-leakage P-MOS disconnect switch controlled by PMIC enable signal.

Use Value: I_DSS ≤ -1μA at -16V ensures <100nA standby current, preserving battery life over multi-week idle periods.

Use Scenario: Upper-leg switch in 24V brushed DC motor driver for industrial actuators.

IC Role / Device Role / Timing Role: High-side switch in H-bridge; body diode provides flyback path during PWM off-time.

Use Value: Linear-mode pulse rating (-28A) sustains 100ms stall currents without SOA violation, enabling safe motor stall detection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMP2022LSS	R_DS(on) = 0.022Ω @ -4.5V; SO-8; V_DSS = -20V; Q_g = 37.5nC	Lower gate charge reduces driver stress but lacks published linear-mode pulse rating	Select for higher efficiency in high-frequency (>1MHz) switching where gate drive loss dominates
SI2301DDS-T1-BE3	R_DS(on) = 0.115Ω @ -4.5V; SOT-23; V_DSS = -20V; I_D = -2.7A	Lower current rating and higher R_DS(on); unsuitable for >3A loads	Use only in space-constrained, low-power (<1W) load switches where SO-8 footprint is prohibitive

Compared with DMP2022LSS, ZXM66P02N8TA trades 14% higher Q_g for verified -28A linear-mode pulse capability-critical for inrush and motor stall. Versus SI2301DDS, it delivers 3.7× lower R_DS(on) and 3× higher current in same voltage class, justifying SO-8 footprint in medium-power designs.

Availability

ZXM66P02N8TA is available at Aetrix Electronics and suitable for DC-DC converters, inrush protection circuits, and load disconnect switches requiring stable component supply and SO-8 thermal reliability.

Supply support for ZXM66P02N8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

The ZXM series targets high-efficiency, low-voltage power management-specifically optimizing R_DS(on), switching speed, and linear-mode ruggedness for battery-powered and compact power systems.

FAQ

Is ZXM66P02N8TA suitable for synchronous rectification in a 5V buck converter?

Yes. Its body diode forward voltage (V_SD = 0.95V at -3.2A) and reverse recovery time (t_rr = 23.1ns) meet requirements for 500kHz–1MHz synchronous buck stages. Gate charge (Q_g = 43.3nC) allows direct drive from standard PWM controllers with integrated high-side gate drivers.

What is the maximum continuous power dissipation at 70°C ambient on a standard PCB?

At T_A = 70°C, the device dissipates up to 1.56W continuously when mounted on a 25mm × 25mm FR4 board with 1oz copper. This corresponds to 5.0A RMS current with 0.025Ω R_DS(on), confirmed per Note 3 in the datasheet's thermal characteristics table.

Does ZXM66P02N8TA require a gate resistor for EMI control in switching applications?

A gate resistor (typically 4.7–10Ω) is recommended to dampen ringing caused by parasitic inductance between driver and gate. The device's Q_gd/Q_gs ratio (6.1) makes it moderately sensitive to Miller effects; external resistance controls dV/dt and reduces radiated emissions without significantly degrading t_D(off).

Can ZXM66P02N8TA replace N-channel MOSFETs in high-side configurations without level shifting?

No. As a P-channel device, it operates with gate driven negative relative to source-enabling direct logic-level control in high-side switches-but cannot substitute for N-channel MOSFETs that require gate voltages above the drain rail. Its architecture eliminates external level shifters needed for N-channel high-side use.

ZXM66P02N8TA Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 6.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 3.2A, 4.5V

Vgs(th) (Max) @ Id:: 700mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 43.3 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2068 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.56W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

ZXM66P02N8TA FAQ

1.How can I place an order for ZXM66P02N8TA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXM66P02N8TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXM66P02N8TA reliable?

The price and inventory of ZXM66P02N8TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXM66P02N8TA is usually 5 days.

3.What payment methods are accepted for ZXM66P02N8TA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXM66P02N8TA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXM66P02N8TA?

ZXM66P02N8TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXM66P02N8TA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXM66P02N8TA?

For technical support, including ZXM66P02N8TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXM66P02N8TA requirements.

6.How does Aetrix verify that ZXM66P02N8TA is sourced from the original manufacturer or authorized distributors?

All ZXM66P02N8TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXM66P02N8TA meets industry standards.

7.What is the process for return or replacement of ZXM66P02N8TA?

All ZXM66P02N8TA units undergo pre-shipment inspection (PSI). If there is an issue with ZXM66P02N8TA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXM66P02N8TA part is unused and in its original packaging.

Return procedure for ZXM66P02N8TA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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