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Diodes Incorporated ZXM66P02N8TC
- Part No.:
- ZXM66P02N8TC
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
ZXM66P02N8TC.pdf
- Description:
- MOSFET P-CH 20V 6.4A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,514
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Product details
Overview
ZXM66P02N8 from Diodes Incorporated is a 20V P-channel enhancement-mode MOSFET in SO-8 package, rated for -8.0A continuous drain current at VGS = -4.5V, with RDS(on) = 0.025Ω and fast switching (tD(off) = 118.4ns). It delivers high pulse current handling in linear mode and supports low-voltage power management in DC-DC converters and inrush protection circuits.
For engineers reviewing the ZXM66P02N8 datasheet, ZXM66P02N8 pinout, ZXM66P02N8 application, or ZXM66P02N8 equivalent, key selection criteria include its -20V VBRDSS, low gate charge (Qg = 43.3nC), body diode forward voltage (VSD = 0.95V), thermal resistance (RθJA = 80°C/W), and SO-8 mechanical compatibility with standard PCB layouts.
Technical Context
This MOSFET employs a proprietary high-density structure-not trenchFET-enabling intrinsically higher pulse current capability in linear operation while maintaining low RDS(on) and fast switching. Its gate threshold voltage (VGS(th) = -0.7V) ensures reliable turn-on with low-voltage logic-level drive.
The device integrates a robust body diode with trr = 23.1ns and Qrr = 12.2nC, supporting synchronous rectification and bidirectional current flow in compact power stages. Thermal performance is specified for 25mm × 25mm FR4 PCB with single-sided 1oz copper (RθJA = 80°C/W at TA = 25°C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBRDSS | -20V - Maximum blocking voltage before avalanche conduction begins under reverse bias |
| RDS(on) | 0.025Ω @ VGS = -4.5V, ID = -3.2A - Enables <125mW conduction loss at 5A load |
| ID (cont) | -8.0A @ TA = 25°C - Supports high-current load switching without external heatsink in ambient-limited designs |
| Qg | 43.3nC - Determines gate drive energy requirement and influences switching loss in PWM applications |
| tD(off) | 118.4ns - Critical timing parameter for dead-time setting in half-bridge configurations |
| VSD | 0.95V @ IS = -3.2A - Defines forward conduction loss of integrated body diode during freewheeling |
| Ciss | 2068pF - Impacts gate drive loop stability and Miller effect in high-frequency switching |
Pinout & Package
Package: SO-8 (Surface-Mount, 8-pin, 5.0mm × 4.0mm footprint, 1.75mm max height), UL 94V-0 molded plastic case, matte tin-plated copper lead frame.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires ≤±12V drive; low input capacitance enables fast edge rates |
| 2 (S) | Source | Reference node for gate drive; connects to load return or ground in high-side switch configuration |
| 3 (D) | Drain | Power output terminal; electrically tied to exposed pad (pins 4–5, 7–8) for thermal conduction |
| 4,5,7,8 (EP) | Exposed Drain Pad | Thermal and electrical connection to drain; must be soldered to PCB copper pour for RθJA compliance |
| 6 (S) | Source (redundant) | Second source connection; paralleled internally with pin 2 to reduce source inductance |
Key Features
| Feature | Design Value |
|---|---|
| High pulse current in linear mode | IDM = -28A - Enables robust inrush limiting without thermal runaway during soft-start |
| Low gate drive requirement | VGS(th) = -0.7V - Compatible with 1.8V/3.3V microcontroller GPIO without level-shifting |
| Fast switching speed | tr = 44.3ns, tf = 98.4ns - Reduces transition losses in >500kHz DC-DC topologies |
| Low-profile SOIC package | Max height 1.75mm - Fits space-constrained portable and automotive control modules |
| Body diode with low Qrr | Qrr = 12.2nC - Minimizes reverse recovery loss and EMI in synchronous buck freewheeling |
Applications
| Inrush Protection Circuit | DC-DC Converter High-Side Switch |
|---|---|
Use Scenario: Prevents surge current during hot-plug insertion of USB-powered peripherals or battery-backed modules. IC Role / Device Role / Timing Role: P-channel MOSFET configured as active-high enable switch with gate driven by pull-up and controlled discharge. Use Value: Limits peak inrush to <1.5× steady-state current using RDS(on)-based current limiting and linear-mode pulse tolerance. | Use Scenario: Controls power delivery in non-synchronous buck regulators or OR-ing circuits for dual-input supplies. IC Role / Device Role / Timing Role: High-side load switch providing on/off control with minimal voltage drop and fast turn-off for fault isolation. Use Value: Delivers <25mV dropout at 5A due to 0.025Ω RDS(on), reducing thermal stress versus discrete FET+driver solutions. |
| Motor Control H-Bridge Low-Side | Power Management Disconnect Switch |
Use Scenario: Drives brushed DC motor windings in low-side configuration with PWM duty cycle modulation. IC Role / Device Role / Timing Role: Synchronous rectifier and current path switch; body diode handles freewheeling during off-time. Use Value: Qrr = 12.2nC and trr = 23.1ns minimize shoot-through risk and switching loss during commutation. | Use Scenario: Isolates subsystems (e.g., display, sensor array) during sleep mode to achieve <1μA standby current. IC Role / Device Role / Timing Role: Load disconnect switch with gate controlled by system PMIC or microcontroller GPIO. Use Value: IDSS ≤ -1μA ensures negligible leakage across open switch, preserving battery life over extended idle periods. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMP2022LSS | RDS(on) = 0.022Ω @ VGS = -4.5V but VBRDSS = -20V same; SO-8 package; Qg = 37nC (lower) | Better efficiency at light loads due to lower Qg; identical pinout and footprint | Select when optimizing for gate drive loss and sub-1MHz switching; verify layout thermal margin for 1.56W dissipation |
| SI2305DS | RDS(on) = 0.045Ω @ VGS = -4.5V; SOT-23 package; ID = -4.1A; lower cost but higher conduction loss | Not suitable for >4A continuous loads; limited thermal mass in SOT-23 | Acceptable for low-power disconnect switches where board space is critical and current <3A |
Compared with DMP2022LSS and SI2305DS, ZXM66P02N8 offers superior pulse current capability (-28A vs -20A) and optimized SO-8 thermal design for sustained 6.4A operation at 70°C ambient-making it preferred for industrial-grade inrush and motor control where transient robustness outweighs marginal RDS(on) gain.
Availability
ZXM66P02N8 is available at Aetrix Electronics and suitable for DC-DC converters, inrush protection circuits, and power management disconnect switches requiring stable component supply and long-term industrial lifecycle support.
Supply support for ZXM66P02N8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, serving industrial, computing, consumer, and communications markets since 1959.
ZXM66P02N8 belongs to Diodes' ZXM series of high-density P-channel MOSFETs, engineered specifically for low-voltage, high-efficiency power switching in space-constrained and thermally demanding applications.
FAQ
Is ZXM66P02N8 suitable for 3.3V logic-level gate drive?
Yes. With VGS(th) = -0.7V (min), the device fully enhances at VGS = -3.3V, delivering RDS(on) ≤ 0.045Ω at -2.7A. This allows direct interface with 3.3V microcontrollers without level shifters, though -4.5V drive yields optimal 0.025Ω performance.
What is the maximum safe operating temperature for continuous use?
The junction temperature must not exceed 150°C. At TA = 70°C with 25mm × 25mm 1oz copper, the device supports 6.4A continuous current (derated from 8.0A at 25°C), per the linear derating factor of 12.5mW/°C and RθJA = 80°C/W.
Does ZXM66P02N8 have an integrated ESD protection diode?
No. The device lacks on-chip ESD protection structures. External TVS or RC snubbers are recommended on gate and drain lines in environments with >2kV HBM exposure, especially in hot-plug or motor-drive applications where inductive transients occur.
Can the exposed drain pad be left unconnected on the PCB?
No. Pins 4, 5, 7, and 8 form a single exposed drain pad that must be soldered to a minimum 25mm² copper pour for thermal compliance. Leaving it unconnected raises RθJA beyond 80°C/W, risking thermal runaway at >2W dissipation and violating JEDEC SO-8 mechanical specifications.
ZXM66P02N8TC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 3.2A, 4.5V
- Vgs(th) (Max) @ Id:
- 700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 43.3 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2068 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.56W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
ZXM66P02N8TC FAQ
1.How can I place an order for ZXM66P02N8TC through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXM66P02N8TC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXM66P02N8TC reliable?
The price and inventory of ZXM66P02N8TC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXM66P02N8TC is usually 5 days.
3.What payment methods are accepted for ZXM66P02N8TC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXM66P02N8TC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZXM66P02N8TC?
ZXM66P02N8TC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXM66P02N8TC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXM66P02N8TC?
For technical support, including ZXM66P02N8TC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXM66P02N8TC requirements.
6.How does Aetrix verify that ZXM66P02N8TC is sourced from the original manufacturer or authorized distributors?
All ZXM66P02N8TC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXM66P02N8TC meets industry standards.
7.What is the process for return or replacement of ZXM66P02N8TC?
All ZXM66P02N8TC units undergo pre-shipment inspection (PSI). If there is an issue with ZXM66P02N8TC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXM66P02N8TC part is unused and in its original packaging.
Return procedure for ZXM66P02N8TC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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