Diodes Incorporated ZXM66P03N8TA
- Part No.:
- ZXM66P03N8TA
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
ZXM66P03N8TA.pdf
- Description:
- MOSFET P-CH 30V 6.25A 8SO
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
ZXM66P03N8TA from Diodes Incorporated (formerly Zetex Semiconductors) is a P-channel enhancement-mode MOSFET with VBRDSS = −30 V, RDS(on) = 0.025 Ω @ VGS = −10 V, and ID = −7.9 A, designed for low-voltage power management in DC–DC converters and load switching circuits.
For engineers reviewing the ZXM66P03N8TA datasheet, ZXM66P03N8TA pinout, ZXM66P03N8TA application, or ZXM66P03N8TA equivalent, key selection criteria include gate threshold voltage (−1.0 V), body diode forward voltage (−0.95 V), fast switching times (td(off) = 94.6 ns), SOIC-8 thermal resistance (RθJA = 50 °C/W), and pulsed drain current capability (IDM = −28 A).
Technical Context
This MOSFET employs a high-density planar structure optimized for low RDS(on) and fast switching in synchronous buck topologies and high-side load switches. Its −1.0 V VGS(th) enables direct drive from 3.3 V logic, and its integrated body diode supports bidirectional current flow in H-bridge motor control.
The device exhibits Ciss = 1979 pF and Qg = 36 nC @ VGS = −5 V, supporting efficient gate driving at frequencies up to 1 MHz. Thermal performance is rated for 2.5 W continuous dissipation on FR4 PCB with 50 °C/W junction-to-ambient resistance under short-duration pulse conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBRDSS | −30 V - Maximum blocking voltage before avalanche conduction in reverse-biased drain-source path |
| RDS(on) | 0.025 Ω @ VGS = −10 V, ID = −5.6 A - Enables <150 mW conduction loss at 7.9 A continuous load |
| VGS(th) | −1.0 V - Allows full enhancement with standard 3.3 V microcontroller GPIO without level-shifting |
| td(off) | 94.6 ns - Supports >1 MHz switching in synchronous rectification with minimal dead-time overhead |
| Qg | 36 nC @ VGS = −5 V - Determines gate driver current requirement (~3.6 mA average at 100 kHz) |
| VSD | −0.95 V @ IS = −5.6 A - Limits reverse-current conduction loss in freewheeling paths |
| RθJA | 50 °C/W - Specifies thermal rise per watt on standard FR4 PCB under pulsed operation |
Pinout & Package
Package: SOIC-8 (3.9 mm × 4.9 mm, 1.27 mm pitch), surface-mount, lead-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source | Common source connection for P-channel operation; tied to high-side rail or ground return in load switch |
| 5, 6, 7, 8 | Drain | Power output node; electrically connected internally to exposed drain pad for thermal conduction |
| Gate | Control input | Accepts negative gate drive relative to source; threshold ensures turn-on with 3.3 V logic swing |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 0.025 Ω minimizes I²R losses in battery-powered 5 V/3.3 V systems |
| Fast td(off) | 94.6 ns reduces switching transition time, lowering overlap losses in synchronous converters |
| Low VGS(th) | −1.0 V enables direct interface with 3.3 V microcontrollers without external level shifters |
| Integrated body diode | VSD = −0.95 V supports controlled freewheeling in motor drive half-bridges |
| SOIC-8 thermal design | RθJA = 50 °C/W allows 2.5 W continuous operation on standard PCB layout |
Applications
| Battery-Powered Load Switch | Synchronous Buck Converter High-Side Switch |
|---|---|
Use Scenario: Power sequencing in portable medical devices requiring controlled 3.3 V rail enable/disable. IC Role / Device Role: High-side P-channel MOSFET acting as active disconnect switch between Li-ion battery and system load. Use Value: Low 0.025 Ω RDS(on) limits dropout to <200 mV at 7 A, preserving battery runtime and enabling precise current monitoring via sense resistor. | Use Scenario: 12 V to 3.3 V step-down conversion in industrial IoT sensor nodes. IC Role / Device Role: High-side synchronous rectifier in buck regulator topology operating at 500 kHz. Use Value: 94.6 ns td(off) and 36 nC Qg allow tight dead-time control, reducing shoot-through risk and improving efficiency above 92% at 2 A load. |
| H-Bridge Motor Driver Low-Side | USB-C Power Delivery Load Switch |
Use Scenario: Bidirectional 24 V brushed DC motor control in automated test equipment. IC Role / Device Role: Low-side switch in H-bridge configuration using body diode for freewheeling current path. Use Value: −0.95 V VSD ensures predictable flyback voltage clamping and eliminates need for external Schottky diode. | Use Scenario: Overvoltage-protected 5 V/3 A USB-C port power delivery in docking stations. IC Role / Device Role: Reverse-polarity and overcurrent protected load switch placed after DC-DC stage. Use Value: −30 V VBRDSS withstands transient surges up to ±24 V, and −28 A IDM supports short-circuit current limiting during fault events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMP3036SSS | RDS(on) = 0.036 Ω @ VGS = −10 V; VGS(th) = −1.2 V; SO-8 package | Higher conduction loss at 7 A; requires stronger gate drive for same speed | Preferred where higher VGS(th) improves noise immunity in noisy industrial environments |
| SI2305DS | RDS(on) = 0.045 Ω @ VGS = −4.5 V; SOT-23 package; ID = −4.1 A | Lower current rating and smaller package limit thermal handling in >3 A applications | Selected for space-constrained designs where 4 A max load suffices and board area is critical |
Compared with DMP3036SSS and SI2305DS, ZXM66P03N8TA delivers lower RDS(on) and higher pulsed current capability in SOIC-8, making it optimal for 5–8 A power management where thermal margin and gate drive simplicity are prioritized over ultra-compact footprint.
Availability
ZXM66P03N8TA is available at Aetrix Electronics and suitable for DC–DC converters, battery-powered load switches, and motor control circuits requiring stable component supply and long-term industrial availability.
Supply support for ZXM66P03N8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its high-performance analog and power portfolio, emphasizing reliability, automotive qualification, and industrial-grade specifications.
ZXM66P03N8TA belongs to Zetex's legacy high-density P-channel MOSFET product line, engineered specifically for low-voltage, high-efficiency power management in portable and embedded systems.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The ZXM66P03N8TA supports −6.3 A continuous drain current at TA = 70°C with VGS = −10 V, based on its 2.5 W power dissipation rating and 50 °C/W thermal resistance under short-duration pulse conditions. Derating follows linear 20 mW/°C reduction above 70°C.
Does this MOSFET require a gate resistor for stability?
A gate resistor of 6.2 Ω was used in the published switching characterization (td(on), tr, etc.), confirming stable turn-on/turn-off behavior without oscillation. For 3.3 V logic drive, a 10–47 Ω series resistor is recommended to damp ringing and limit peak gate current to <100 mA.
Can ZXM66P03N8TA be used in linear regulation mode?
No - the device is not characterized or rated for linear (ohmic) operation. Its Safe Operating Area (SOA) is not specified beyond pulsed conditions, and sustained operation in the linear region risks thermal runaway due to positive temperature coefficient of RDS(on) and limited SOA boundary data.
Is the SOIC-8 package lead-free and RoHS compliant?
Yes - ZXM66P03N8TA is manufactured with lead-free terminations and complies with EU RoHS Directive 2011/65/EU. The device uses matte tin plating over copper leads and meets JEDEC J-STD-020 moisture sensitivity level MSL3 (260°C reflow peak).
ZXM66P03N8TA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 5.6A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 36 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1979 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.56W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
ZXM66P03N8TA FAQ
1.How can I place an order for ZXM66P03N8TA through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXM66P03N8TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXM66P03N8TA reliable?
The price and inventory of ZXM66P03N8TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXM66P03N8TA is usually 5 days.
3.What payment methods are accepted for ZXM66P03N8TA?
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4.How is shipping managed for ZXM66P03N8TA?
ZXM66P03N8TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXM66P03N8TA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXM66P03N8TA?
For technical support, including ZXM66P03N8TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXM66P03N8TA requirements.
6.How does Aetrix verify that ZXM66P03N8TA is sourced from the original manufacturer or authorized distributors?
All ZXM66P03N8TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXM66P03N8TA meets industry standards.
7.What is the process for return or replacement of ZXM66P03N8TA?
All ZXM66P03N8TA units undergo pre-shipment inspection (PSI). If there is an issue with ZXM66P03N8TA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXM66P03N8TA part is unused and in its original packaging.
Return procedure for ZXM66P03N8TA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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