Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated ZXM66P03N8TA

Part No.:
ZXM66P03N8TA
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixZXM66P03N8TA.pdf
Description:
MOSFET P-CH 30V 6.25A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,198

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

ZXM66P03N8TA from Diodes Incorporated (formerly Zetex Semiconductors) is a P-channel enhancement-mode MOSFET with VBRDSS = −30 V, RDS(on) = 0.025 Ω @ VGS = −10 V, and ID = −7.9 A, designed for low-voltage power management in DC–DC converters and load switching circuits.

For engineers reviewing the ZXM66P03N8TA datasheet, ZXM66P03N8TA pinout, ZXM66P03N8TA application, or ZXM66P03N8TA equivalent, key selection criteria include gate threshold voltage (−1.0 V), body diode forward voltage (−0.95 V), fast switching times (td(off) = 94.6 ns), SOIC-8 thermal resistance (RθJA = 50 °C/W), and pulsed drain current capability (IDM = −28 A).

Technical Context

This MOSFET employs a high-density planar structure optimized for low RDS(on) and fast switching in synchronous buck topologies and high-side load switches. Its −1.0 V VGS(th) enables direct drive from 3.3 V logic, and its integrated body diode supports bidirectional current flow in H-bridge motor control.

The device exhibits Ciss = 1979 pF and Qg = 36 nC @ VGS = −5 V, supporting efficient gate driving at frequencies up to 1 MHz. Thermal performance is rated for 2.5 W continuous dissipation on FR4 PCB with 50 °C/W junction-to-ambient resistance under short-duration pulse conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VBRDSS−30 V - Maximum blocking voltage before avalanche conduction in reverse-biased drain-source path
RDS(on)0.025 Ω @ VGS = −10 V, ID = −5.6 A - Enables <150 mW conduction loss at 7.9 A continuous load
VGS(th)−1.0 V - Allows full enhancement with standard 3.3 V microcontroller GPIO without level-shifting
td(off)94.6 ns - Supports >1 MHz switching in synchronous rectification with minimal dead-time overhead
Qg36 nC @ VGS = −5 V - Determines gate driver current requirement (~3.6 mA average at 100 kHz)
VSD−0.95 V @ IS = −5.6 A - Limits reverse-current conduction loss in freewheeling paths
RθJA50 °C/W - Specifies thermal rise per watt on standard FR4 PCB under pulsed operation

Pinout & Package

Package: SOIC-8 (3.9 mm × 4.9 mm, 1.27 mm pitch), surface-mount, lead-free, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4SourceCommon source connection for P-channel operation; tied to high-side rail or ground return in load switch
5, 6, 7, 8DrainPower output node; electrically connected internally to exposed drain pad for thermal conduction
GateControl inputAccepts negative gate drive relative to source; threshold ensures turn-on with 3.3 V logic swing

Key Features

FeatureDesign Value
Low RDS(on)0.025 Ω minimizes I²R losses in battery-powered 5 V/3.3 V systems
Fast td(off)94.6 ns reduces switching transition time, lowering overlap losses in synchronous converters
Low VGS(th)−1.0 V enables direct interface with 3.3 V microcontrollers without external level shifters
Integrated body diodeVSD = −0.95 V supports controlled freewheeling in motor drive half-bridges
SOIC-8 thermal designRθJA = 50 °C/W allows 2.5 W continuous operation on standard PCB layout

Applications

Battery-Powered Load SwitchSynchronous Buck Converter High-Side Switch

Use Scenario: Power sequencing in portable medical devices requiring controlled 3.3 V rail enable/disable.

IC Role / Device Role: High-side P-channel MOSFET acting as active disconnect switch between Li-ion battery and system load.

Use Value: Low 0.025 Ω RDS(on) limits dropout to <200 mV at 7 A, preserving battery runtime and enabling precise current monitoring via sense resistor.

Use Scenario: 12 V to 3.3 V step-down conversion in industrial IoT sensor nodes.

IC Role / Device Role: High-side synchronous rectifier in buck regulator topology operating at 500 kHz.

Use Value: 94.6 ns td(off) and 36 nC Qg allow tight dead-time control, reducing shoot-through risk and improving efficiency above 92% at 2 A load.

H-Bridge Motor Driver Low-SideUSB-C Power Delivery Load Switch

Use Scenario: Bidirectional 24 V brushed DC motor control in automated test equipment.

IC Role / Device Role: Low-side switch in H-bridge configuration using body diode for freewheeling current path.

Use Value: −0.95 V VSD ensures predictable flyback voltage clamping and eliminates need for external Schottky diode.

Use Scenario: Overvoltage-protected 5 V/3 A USB-C port power delivery in docking stations.

IC Role / Device Role: Reverse-polarity and overcurrent protected load switch placed after DC-DC stage.

Use Value: −30 V VBRDSS withstands transient surges up to ±24 V, and −28 A IDM supports short-circuit current limiting during fault events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMP3036SSSRDS(on) = 0.036 Ω @ VGS = −10 V; VGS(th) = −1.2 V; SO-8 packageHigher conduction loss at 7 A; requires stronger gate drive for same speedPreferred where higher VGS(th) improves noise immunity in noisy industrial environments
SI2305DSRDS(on) = 0.045 Ω @ VGS = −4.5 V; SOT-23 package; ID = −4.1 ALower current rating and smaller package limit thermal handling in >3 A applicationsSelected for space-constrained designs where 4 A max load suffices and board area is critical

Compared with DMP3036SSS and SI2305DS, ZXM66P03N8TA delivers lower RDS(on) and higher pulsed current capability in SOIC-8, making it optimal for 5–8 A power management where thermal margin and gate drive simplicity are prioritized over ultra-compact footprint.

Availability

ZXM66P03N8TA is available at Aetrix Electronics and suitable for DC–DC converters, battery-powered load switches, and motor control circuits requiring stable component supply and long-term industrial availability.

Supply support for ZXM66P03N8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its high-performance analog and power portfolio, emphasizing reliability, automotive qualification, and industrial-grade specifications.

ZXM66P03N8TA belongs to Zetex's legacy high-density P-channel MOSFET product line, engineered specifically for low-voltage, high-efficiency power management in portable and embedded systems.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The ZXM66P03N8TA supports −6.3 A continuous drain current at TA = 70°C with VGS = −10 V, based on its 2.5 W power dissipation rating and 50 °C/W thermal resistance under short-duration pulse conditions. Derating follows linear 20 mW/°C reduction above 70°C.

Does this MOSFET require a gate resistor for stability?

A gate resistor of 6.2 Ω was used in the published switching characterization (td(on), tr, etc.), confirming stable turn-on/turn-off behavior without oscillation. For 3.3 V logic drive, a 10–47 Ω series resistor is recommended to damp ringing and limit peak gate current to <100 mA.

Can ZXM66P03N8TA be used in linear regulation mode?

No - the device is not characterized or rated for linear (ohmic) operation. Its Safe Operating Area (SOA) is not specified beyond pulsed conditions, and sustained operation in the linear region risks thermal runaway due to positive temperature coefficient of RDS(on) and limited SOA boundary data.

Is the SOIC-8 package lead-free and RoHS compliant?

Yes - ZXM66P03N8TA is manufactured with lead-free terminations and complies with EU RoHS Directive 2011/65/EU. The device uses matte tin plating over copper leads and meets JEDEC J-STD-020 moisture sensitivity level MSL3 (260°C reflow peak).

ZXM66P03N8TA Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
6.25A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
25mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
36 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1979 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1.56W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

ZXM66P03N8TA FAQ

1.How can I place an order for ZXM66P03N8TA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXM66P03N8TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXM66P03N8TA reliable?

The price and inventory of ZXM66P03N8TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXM66P03N8TA is usually 5 days.

3.What payment methods are accepted for ZXM66P03N8TA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXM66P03N8TA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXM66P03N8TA?

ZXM66P03N8TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXM66P03N8TA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXM66P03N8TA?

For technical support, including ZXM66P03N8TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXM66P03N8TA requirements.

6.How does Aetrix verify that ZXM66P03N8TA is sourced from the original manufacturer or authorized distributors?

All ZXM66P03N8TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXM66P03N8TA meets industry standards.

7.What is the process for return or replacement of ZXM66P03N8TA?

All ZXM66P03N8TA units undergo pre-shipment inspection (PSI). If there is an issue with ZXM66P03N8TA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXM66P03N8TA part is unused and in its original packaging.

Return procedure for ZXM66P03N8TA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

ZXM66P03N8TA Tags

  • ZXM66P03N8TA
  • ZXM66P03N8TA PDF
  • ZXM66P03N8TA Datasheet
  • ZXM66P03N8TA Specifications
  • ZXM66P03N8TA Images
  • Diodes Incorporated
  • Diodes Incorporated ZXM66P03N8TA
  • Buy ZXM66P03N8TA
  • ZXM66P03N8TA Price
  • ZXM66P03N8TA Distributor
  • ZXM66P03N8TA Supplier
  • ZXM66P03N8TA Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER