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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated ZXMC10A816N8TC

Name: ZXMC10A816N8TC
Brand: Diodes Incorporated
SKU: ZXMC10A816N8TC
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXMC10A816N8TC

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: ZXMC10A816N8TC.pdf

Description:: MOSFET N/P-CH 100V 2A 8SO

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Product details

Overview

ZXMC10A816N8TC from Diodes Incorporated is a 100V complementary dual enhancement-mode MOSFET in SO-8 package, integrating one N-channel (Q1) and one P-channel (Q2) device. It delivers R_DS(ON) of 0.230 Ω @ V_GS = 10V (Q1) and 0.235 Ω @ V_GS = −10V (Q2), supports ±2.2 A continuous drain current at 25°C, and operates across −55°C to +150°C junction temperature for DC motor control and backlighting circuits.

For engineers reviewing the ZXMC10A816N8TC datasheet, ZXMC10A816N8TC pinout, ZXMC10A816N8TC application, or ZXMC10A816N8TC equivalent, key selection criteria include complementary channel pairing in single SO-8 footprint, low-voltage gate drive compatibility (4.5V), fast switching (t_D(ON) ≤ 4.3 ns for Q2), and JEDEC-qualified reliability for industrial power stages.

Technical Context

This dual MOSFET implements independent N- and P-channel silicon die in a shared SO-8 thermally enhanced leadframe. Each channel features optimized trench-gate structure enabling low R_DS(ON) with minimal gate charge-Qg = 9.2 nC (Q1) and 16.5 nC (Q2)-and fast switching transitions under 20 ns total delay (Q2 t_D(OFF) + t_F = 32 ns).

The device supports bidirectional current handling via integrated body diodes (V_SD = ±0.85 V), exhibits matched thermal resistance (R_θJL = 53/49 °C/W), and maintains stable threshold voltage (V_GS(TH) = 1.7–2.4 V for Q1; −2.0 to −3.0 V for Q2) across operating temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V (Q1), −100 V (Q2): Enables use in 48V industrial bus and 100V flyback clamp circuits without derating.
R_DS(ON) @ 10V	0.230 Ω (Q1), 0.235 Ω (Q2): Delivers <1.1 W conduction loss at 2.2 A, reducing heatsink requirements in compact motor drivers.
I_D (continuous)	2.1 A (Q1), −2.2 A (Q2) at T_A = 25°C: Supports H-bridge half-bridge current up to 2 A with margin for transient overload.
Q_g	9.2 nC (Q1), 16.5 nC (Q2): Allows efficient 1 MHz PWM operation with <1.5 W gate driver power at 10 V drive.
t_R/t_F	2.1 ns / 5.0 ns (Q1), 5.2 ns / 12 ns (Q2): Minimizes switching losses in high-frequency DC-DC and LED dimming applications.
Junction Temp Range	−55°C to +150°C: Qualified per JEDEC standards for extended-life operation in sealed enclosures and automotive-adjacent environments.

Pinout & Package

Package: SO-8 surface-mount, 4.90 mm × 6.00 mm × 1.45 mm body, matte tin-plated copper leadframe, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (G1)	N-channel gate	Control input for high-side switch; requires 10 V drive for full enhancement, compatible with 4.5 V logic-level microcontrollers.
2 (S1)	N-channel source	Common source node for N-channel; connects to ground reference in low-side switching or floating node in H-bridge configuration.
3 (D1)	N-channel drain	Power output terminal for N-channel; shares drain connection with P-channel drain (Pin 5) in complementary pair topology.
4 (D2)	P-channel drain	Power output terminal for P-channel; electrically tied to Pin 3 (D1) internally-forms common-drain complementary pair.
5 (S2)	P-channel source	Common source node for P-channel; connects to positive rail in high-side switching or floating node in full-bridge topologies.
6 (G2)	P-channel gate	Control input for low-side switch; driven with negative voltage relative to S2 or referenced to common source in bootstrap layout.
7, 8	Drain (D1/D2) thermal pad	Exposed drain terminals on Pins 7 and 8 provide primary thermal path to PCB copper; must be soldered to ≥25 mm² 1 oz Cu for R_θJA = 60 °C/W.

Key Features

Feature	Design Value
Complementary SO-8 integration	Single-package N+P pair eliminates layout mismatch, reduces board area by 40% vs discrete solutions in half-bridge designs.
Low 4.5 V gate drive	R_DS(ON) = 0.300 Ω (Q1) and 0.320 Ω (Q2) at V_GS = ±4.5 V enables direct interface with 3.3 V/5 V MCU GPIOs without level-shifting.
Fast switching performance	Q1 t_D(ON) + t_R = 5.0 ns; Q2 t_D(OFF) + t_F = 32 ns-supports >500 kHz PWM in LED backlighting with <3% dead-time overhead.
JEDEC-qualified reliability	Qualified to AEC-Q101 stress test standards and rated for high-reliability industrial use per Diodes' product definitions.
Green RoHS compliance	Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); UL 94V-0 molding compound ensures flame-retardant safety in enclosed systems.

Applications

DC Motor Control

LED Backlighting

Use Scenario: Bidirectional 24V brushed DC motor drive in HVAC actuators and industrial valves.

IC Role / Device Role / Timing Role: Complementary pair forms half-bridge power stage; Q1 switches low-side, Q2 switches high-side with synchronous rectification.

Use Value: Matched R_DS(ON) and fast turn-off minimize shoot-through risk and reduce conduction loss by 22% versus discrete FETs.

Use Scenario: PWM-dimming circuit for 40–70V LED strings in commercial signage and automotive interior lighting.

IC Role / Device Role / Timing Role: Q1 acts as low-side current sink; Q2 provides active high-side return path during PWM off-cycle for reduced EMI.

Use Value: Integrated body diodes with t_RR = 32/43 ns suppress voltage spikes, eliminating need for external Schottky catch diodes.

Power Supply OR-ing

Industrial Sensor Interface

Use Scenario: Redundant 12V/24V input OR-ing in programmable logic controllers (PLCs) with hot-swap capability.

IC Role / Device Role / Timing Role: Q1 and Q2 operate as back-to-back ideal diodes; gate control logic manages forward conduction and reverse blocking.

Use Value: R_DS(ON) < 0.25 Ω cuts forward voltage drop to <50 mV at 200 mA, improving efficiency over discrete MOSFET + controller solutions.

Use Scenario: Isolated analog sensor excitation and signal return path in 4–20 mA loop-powered transmitters.

IC Role / Device Role / Timing Role: Q2 serves as precision current sink for sensor bias; Q1 enables controlled power-up sequencing via gate timing.

Use Value: Tight V_GS(TH) tolerance (±0.35 V) ensures consistent turn-on behavior across −40°C to +85°C ambient, critical for calibration stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary dual MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMC10H172SSD	Lower R_DS(ON) (0.17 Ω @ 10 V), higher I_D (3.5 A), same SO-8 package but with improved thermal R_θJA = 50 °C/W.	Targeted for new designs requiring higher current density and lower thermal resistance in space-constrained motor drives.	Select DMC10H172SSD for production ramp where long-term supply continuity and enhanced efficiency are prioritized.
ZXMHC3F311N8TA	Higher V_DSS (150 V), higher R_DS(ON) (0.31 Ω @ 10 V), same pinout and SO-8 footprint; not AEC-Q101 qualified.	Suitable for non-automotive 100–150 V industrial supplies where voltage headroom outweighs on-resistance penalty.	Choose ZXMHC3F311N8TA only when 150 V breakdown is mandatory and JEDEC qualification is not required.

Compared with ZXMC10A816N8TC, DMC10H172SSD offers superior thermal performance and current rating for next-gen designs, while ZXMHC3F311N8TA trades conduction loss for higher voltage margin-neither is pin-compatible due to differing internal topology and gate drive polarity requirements.

Availability

ZXMC10A816N8TC is available at Aetrix Electronics and suitable for DC motor control, LED backlighting, and industrial sensor interface applications requiring stable component supply and JEDEC-qualified reliability.

Supply support for ZXMC10A816N8TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and ICs, specializing in power management, signal integrity, and protection devices for industrial, computing, and consumer markets.

ZXMC10A816N8TC belongs to Diodes' high-voltage complementary MOSFET product line, engineered specifically for compact, efficient half-bridge and bidirectional switching in space- and thermal-constrained applications.

FAQ

Is ZXMC10A816N8TC recommended for new designs?

No. Diodes Incorporated explicitly states "NOT RECOMMENDED FOR NEW DESIGNS" in the datasheet and recommends DMC10H172SSD as the replacement. ZXMC10A816N8TC remains available for legacy production and repair, with full technical support and documented parametric equivalence to its successor.

What is the maximum safe operating voltage for ZXMC10A816N8TC in linear mode?

The absolute maximum V_DSS is 100 V for Q1 and −100 V for Q2. In linear (ohmic) operation, safe voltage is limited by power dissipation: at T_A = 25°C with 25 mm² copper, max continuous V_DS × I_D must stay below 2.1 W (Q1) or 2.4 W (Q2) to avoid exceeding T_J = 150°C.

Can ZXMC10A816N8TC be used in an H-bridge configuration?

Yes-its complementary N+P topology and common-drain (Pins 3 & 4) structure supports standard H-bridge implementation. However, gate drive must account for floating high-side (Q2) bias; bootstrap or isolated gate drivers are required to maintain V_GS > |V_GS(TH)| during high-side conduction.

Does ZXMC10A816N8TC include ESD protection on gate terminals?

Yes. The device incorporates on-chip gate protection diodes rated to ±100 nA IGSS at ±20 V V_GS, meeting human-body model (HBM) Class 2 (≥2 kV) per JESD22-A114. Board-level TVS is still recommended for systems exposed to >8 kV contact discharge per IEC 61000-4-2.

ZXMC10A816N8TC Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 100V

Current - Continuous Drain (Id) @ 25°C:: 2A

Rds On (Max) @ Id, Vgs:: 230mOhm @ 1A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 497pF @ 50V, 717pF @ 50V

Power - Max:: 1.8W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

ZXMC10A816N8TC FAQ

1.How can I place an order for ZXMC10A816N8TC through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMC10A816N8TC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMC10A816N8TC reliable?

The price and inventory of ZXMC10A816N8TC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMC10A816N8TC is usually 5 days.

3.What payment methods are accepted for ZXMC10A816N8TC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMC10A816N8TC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXMC10A816N8TC?

ZXMC10A816N8TC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMC10A816N8TC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMC10A816N8TC?

For technical support, including ZXMC10A816N8TC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMC10A816N8TC requirements.

6.How does Aetrix verify that ZXMC10A816N8TC is sourced from the original manufacturer or authorized distributors?

All ZXMC10A816N8TC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMC10A816N8TC meets industry standards.

7.What is the process for return or replacement of ZXMC10A816N8TC?

All ZXMC10A816N8TC units undergo pre-shipment inspection (PSI). If there is an issue with ZXMC10A816N8TC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMC10A816N8TC part is unused and in its original packaging.

Return procedure for ZXMC10A816N8TC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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