Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated ZXMC3A16DN8TA

Part No.:
ZXMC3A16DN8TA
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixZXMC3A16DN8TA.pdf
Description:
MOSFET N/P-CH 30V 4.9A/4.1A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:28,290

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

ZXMC3A16DN8TA from Zetex Semiconductors is a complementary dual-channel enhancement-mode MOSFET in SOIC-8 package, integrating an N-channel (30 V, 6.4 A, 35 mΩ) and P-channel (−30 V, −5.4 A, 48 mΩ) device for half-bridge or level-shifting power stages. It delivers low gate charge (9.2 nC/12.9 nC), fast switching (td(on) = 3.0/3.8 ns), and low-threshold drive compatibility in motor control and LCD backlighting circuits.

For engineers reviewing the ZXMC3A16DN8TA datasheet, ZXMC3A16DN8TA pinout, ZXMC3A16DN8TA application, or ZXMC3A16DN8TA equivalent, key selection criteria include verified RDS(on) at 4.5 V, body diode recovery (trr = 17.8/21.2 ns), thermal resistance (RθJA = 60–100 °C/W depending on layout), and SOIC-8 dual-die thermal coupling behavior.

Technical Context

This dual MOSFET implements trench-gate silicon technology with independent N- and P-channel dies in a single SOIC-8 footprint. Each channel features fully characterized gate threshold (VGS(th) = 1.0 V typ), low-input capacitance (Ciss = 796/970 pF), and matched dynamic parameters enabling synchronous buck or H-bridge operation without external timing compensation.

The device supports bidirectional current flow via integrated body diodes (VSD = 0.85/−0.85 V at rated current) and exhibits defined thermal derating (17 mW/°C at 2.1 W PD with dual-die conduction), making it suitable for thermally constrained PCB layouts where copper area is limited to 25 mm × 25 mm.

Key Specifications

ParameterValue and Actual Design Meaning
VDSSN-ch: 30 V; P-ch: −30 V - supports 24 V rail systems with 20 % margin against transients
RDS(on) @ VGS = 10 VN-ch: 35 mΩ; P-ch: 48 mΩ - enables ≤0.22 W conduction loss per channel at 3 A DC
ID Continuous @ TA = 25°CN-ch: 6.4 A; P-ch: −5.4 A - defines maximum steady-state load current with standard SOIC-8 heatsinking
Qg TotalN-ch: 17.5 nC; P-ch: 24.9 nC - determines gate driver current requirement (≥1.8 mA avg for 1 MHz PWM)
tr/tfN-ch: 6.4/9.4 ns; P-ch: 6.1/19 ns - sets minimum practical dead-time (≥30 ns) to prevent shoot-through
RθJA60–100 °C/W - varies with active die count and PCB copper coverage; critical for junction temperature estimation
VSD @ ISN-ch: 0.85 V @ 5.1 A; P-ch: −0.85 V @ −3.6 A - defines forward drop during synchronous rectification or freewheeling

Pinout & Package

SOIC-8 package (4.8–5.0 mm width, 3.8–4.0 mm body length, 1.35–1.75 mm height) with exposed pad not present; dual-die construction with electrically isolated channels sharing common source terminals in half-bridge configuration.

Pin/TerminalCircuit RoleDesign Meaning
1 (G1)N-channel gateAccepts 0–10 V logic-level drive; 2.3 nC Qgs enables fast turn-on with low gate resistance
2 (S1)N-channel sourceCommon source node for N-ch; ties to power ground or low-side switch node
3 (D1)N-channel drainConnects to load/high-side rail; shares thermal path with P-ch drain (Pin 6)
4 (S2)P-channel sourceCommon source node for P-ch; connects to output node or floating rail in high-side switch
5 (D2)P-channel drainConnects to supply rail; thermally coupled to Pin 3 for balanced junction temperature
6 (G2)P-channel gateAccepts 0 to −10 V drive; 2.67 nC Qgs ensures controlled turn-off in high-side applications
7, 8Source tie (S1/S2)Internally connected source pins - must be routed to same net; no isolation between channels

Key Features

FeatureDesign Value
Complementary dual-die integrationSingle SOIC-8 replaces discrete N+P pair, reducing board area by ≥40 % and parasitic inductance
Low RDS(on) at 4.5 VN-ch: 50 mΩ; P-ch: 70 mΩ - enables direct microcontroller GPIO drive without level shifters
Matched switching timingtd(on)/td(off) ratio < 1.2:1 across channels - simplifies dead-time calibration in half-bridge controllers
Body diode with low QrrN-ch: 11.6 nC; P-ch: 18.7 nC - reduces switching loss and EMI in hard-commutated topologies
Thermally optimized layoutDual-drain pins (3 & 5) share thermal mass - improves power cycling reliability under asymmetric load conditions

Applications

Brushless DC Motor ControlLCD Backlight Inverter

Use Scenario: Driving three-phase BLDC gate drivers in fan or pump modules with 12–24 V input.

IC Role / Device Role / Timing Role: Half-bridge low-side (N-ch) and high-side (P-ch) switches operating at 20–50 kHz PWM.

Use Value: 35/48 mΩ RDS(on) minimizes I²R loss at 4–6 A phase current; fast tr/tf enables < 100 ns dead-time control.

Use Scenario: Boost converter stage feeding CCFL or LED string in industrial display panels.

IC Role / Device Role / Timing Role: Synchronous rectifier and main switch in flyback-derived topology with 300–500 kHz switching.

Use Value: Low Qg (9.2/12.9 nC) reduces gate drive loss; VSD < 0.95 V ensures efficient freewheeling during discontinuous conduction.

USB-C Power Delivery SinkIndustrial Solenoid Driver

Use Scenario: Input protection and load switching for 20 V/5 A USB-PD sink ports in docking stations.

IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protection switch with fast fault response.

Use Value: Complementary channels enable bidirectional blocking (±30 V); 1.0 V VGS(th) allows direct MCU control without bias circuitry.

Use Scenario: 24 V solenoid actuation in programmable logic controller (PLC) output modules.

IC Role / Device Role / Timing Role: High-side (P-ch) and low-side (N-ch) driver for push-pull solenoid excitation.

Use Value: Matched RDS(on) and thermal coupling ensure balanced current sharing; 150 °C Tj(max) supports extended industrial ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary dual-MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMC2038LVT-7RDS(on) higher (N: 48 mΩ, P: 65 mΩ); Qg lower (N: 11.5 nC, P: 14.2 nC); SO-8 packageBetter suited for lower-current (< 4 A), higher-frequency (> 1 MHz) applications due to reduced gate chargeSelect when gate drive strength is limited and conduction loss budget allows +37 % increase
SI3588DV-T1-GE3Asymmetric rating (N: 30 V/4.9 A, P: −20 V/−3.8 A); RDS(on) higher (N: 55 mΩ, P: 85 mΩ); same SO-8Only viable for 12 V systems requiring lower voltage rating; unsuitable for 24 V motor drivesChoose only if system max VIN ≤ 15 V and thermal margin exceeds 25 °C

Compared with DMC2038LVT-7 and SI3588DV-T1-GE3, ZXMC3A16DN8TA provides superior conduction efficiency at 6 A loads and broader voltage headroom, but requires stronger gate drive capability due to higher total Qg.

Availability

ZXMC3A16DN8TA is available at Aetrix Electronics and suitable for motor drive, LCD backlighting, USB-C power delivery, and industrial solenoid control applications requiring stable component supply and SOIC-8 form factor compatibility.

Supply support for ZXMC3A16DN8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Zetex Semiconductors plc was a UK-based designer of high-performance analog and power semiconductors, acquired by Diodes Incorporated in 2008; its legacy MOSFET portfolio emphasizes trench technology for efficiency-critical power switching.

ZXMC3A16DN8TA belongs to Zetex's complementary dual-MOSFET product line, engineered specifically for space-constrained DC-DC conversion and motor control where matched N/P characteristics and SOIC-8 integration reduce bill-of-materials and layout complexity.

FAQ

What is the maximum continuous drain current for each channel at 70°C ambient?

The N-channel supports 5.1 A and the P-channel supports −4.3 A at TA = 70°C with SOIC-8 mounting on FR4 PCB (single-sided 1 oz copper). These values reflect linear derating from 6.4 A/−5.4 A at 25°C using the 17 mW/°C factor for dual-die operation.

Can ZXMC3A16DN8TA be used in synchronous rectification mode?

Yes - both channels feature low VSD (0.85 V/−0.85 V) and fast reverse recovery (trr = 17.8/21.2 ns), enabling efficient synchronous rectification in buck or flyback converters up to 500 kHz, provided gate drive timing avoids cross-conduction.

Is the SOIC-8 package lead-free and RoHS compliant?

Yes - ZXMC3A16DN8TA was manufactured to RoHS Directive 2002/95/EC standards with lead-free terminations and halogen-free molding compound, as confirmed in Zetex's October 2005 datasheet revision and Diodes Incorporated's legacy compliance documentation.

How does thermal resistance change when only one channel is active?

When only one die operates, RθJA is 100 °C/W (25 mm × 25 mm PCB, still air); with both dies active at equal power, it drops to 60 °C/W due to shared thermal mass - this 40 % improvement must be factored into worst-case junction temperature calculations.

ZXMC3A16DN8TA Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
4.9A, 4.1A
Rds On (Max) @ Id, Vgs:
35mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:
17.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
796pF @ 25V
Power - Max:
1.25W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

ZXMC3A16DN8TA FAQ

1.How can I place an order for ZXMC3A16DN8TA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMC3A16DN8TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMC3A16DN8TA reliable?

The price and inventory of ZXMC3A16DN8TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMC3A16DN8TA is usually 5 days.

3.What payment methods are accepted for ZXMC3A16DN8TA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMC3A16DN8TA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXMC3A16DN8TA?

ZXMC3A16DN8TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMC3A16DN8TA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMC3A16DN8TA?

For technical support, including ZXMC3A16DN8TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMC3A16DN8TA requirements.

6.How does Aetrix verify that ZXMC3A16DN8TA is sourced from the original manufacturer or authorized distributors?

All ZXMC3A16DN8TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMC3A16DN8TA meets industry standards.

7.What is the process for return or replacement of ZXMC3A16DN8TA?

All ZXMC3A16DN8TA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMC3A16DN8TA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMC3A16DN8TA part is unused and in its original packaging.

Return procedure for ZXMC3A16DN8TA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

ZXMC3A16DN8TA Tags

  • ZXMC3A16DN8TA
  • ZXMC3A16DN8TA PDF
  • ZXMC3A16DN8TA Datasheet
  • ZXMC3A16DN8TA Specifications
  • ZXMC3A16DN8TA Images
  • Diodes Incorporated
  • Diodes Incorporated ZXMC3A16DN8TA
  • Buy ZXMC3A16DN8TA
  • ZXMC3A16DN8TA Price
  • ZXMC3A16DN8TA Distributor
  • ZXMC3A16DN8TA Supplier
  • ZXMC3A16DN8TA Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER