Diodes Incorporated ZXMC3A16DN8TC

Overview

ZXMC3A16DN8TC from Zetex Semiconductors is a complementary dual-channel enhancement-mode MOSFET pair in SOIC-8 package, integrating an N-channel (30 V, 6.4 A, R_DS(on) = 35 mΩ @ V_GS = 10 V) and P-channel (−30 V, −5.4 A, R_DS(on) = 48 mΩ @ V_GS = −10 V) device optimized for synchronous buck converters and H-bridge motor drive stages.

For engineers reviewing the ZXMC3A16DN8TC datasheet, ZXMC3A16DN8TC pinout, ZXMC3A16DN8TC application, or ZXMC3A16DN8TC equivalent, key selection criteria include verified dual-die thermal coupling, gate charge asymmetry (Q_g = 17.5 nC / 24.9 nC), body diode recovery (t_rr = 17.8 ns / 21.2 ns), and SOIC-8 footprint compatibility with standard PCB layout rules for low-inductance gate drive.

Technical Context

This dual MOSFET implements trench-gate silicon technology to simultaneously minimize conduction loss (R_DS(on)) and switching loss (low C_iss, C_rss, Q_g). The N- and P-channel devices share a common source connection internally configured for half-bridge topology support.

Thermal design requires distinction between single-die (R_θJA = 100 °C/W) and dual-die operation (R_θJA = 60–70 °C/W), with linear derating factors ranging from 10 to 17 mW/°C depending on PCB copper area and active die count.

Key Specifications

Pinout & Package

SOIC-8 package with exposed pad not present; JEDEC MS-012AC compliant outline, 5.0 × 4.0 × 1.5 mm body, 1.27 mm lead pitch, gull-wing leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Compared with Si7851DP-T1-GE3 and DMC2038LSD-13, ZXMC3A16DN8TC delivers optimal balance of 30 V robustness, 35/48 mΩ R_DS(on), and 17.5/24.9 nC gate charge-making it preferred for 24 V industrial buck converters requiring <1 MHz operation and <100 °C junction temperature.

Availability

ZXMC3A16DN8TC is available at Aetrix Electronics and suitable for motor drive, LCD backlighting, and DC-DC synchronous buck applications requiring stable component supply, consistent parametric performance across production lots, and long-term availability beyond typical consumer-grade MOSFET lifecycles.

Supply support for ZXMC3A16DN8TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Zetex Semiconductors plc was a UK-based fabless semiconductor company specializing in high-performance analog and power discrete components before its acquisition by Diodes Incorporated in 2008.

ZXMC series complementary MOSFETs were engineered for space-constrained, high-efficiency power conversion in portable and industrial equipment-emphasizing trench process optimization for simultaneous low R_DS(on) and fast switching.

FAQ

What is the maximum continuous drain current for each channel at 70°C ambient?

The N-channel supports 5.1 A and the P-channel supports −4.3 A at T_A = 70°C with V_GS = ±10 V, measured under SOIC-8 mounting conditions on FR4 with single-sided 1 oz copper. These values reflect thermal derating from the 25°C ratings of 6.4 A and −5.4 A, and assume one active die unless otherwise specified in layout.

Can ZXMC3A16DN8TC be used in a synchronous boost converter?

Yes - the complementary N/P structure supports synchronous boost topologies where the P-channel operates as the high-side switch and the N-channel serves as the low-side synchronous rectifier. Its 30 V rating, low R_DS(on), and fast t_rr make it suitable for 12 V input → 19 V output designs up to 500 kHz, provided gate drive sequencing avoids shoot-through.

Is the SOIC-8 package thermally enhanced with an exposed pad?

No - ZXMC3A16DN8TC uses a standard SOIC-8 package without an exposed thermal pad. Thermal performance relies entirely on PCB copper area and trace routing; the datasheet specifies R_θJA = 60–100 °C/W depending on whether one or both dies are active and the copper coverage beneath the package.

What is the recommended gate resistor value for 1 MHz switching?

A 6.0 Ω gate resistor is validated in the datasheet for 15 V drive at 3.5 A load, yielding t_r = 6.4 ns and t_f = 9.4 ns. For 1 MHz operation, this value balances switching speed against ringing and EMI; reducing below 4.7 Ω increases dV/dt stress and may require ferrite beads or RC snubbers on gate traces.