Diodes Incorporated ZXMC3A17DN8TA

Overview

ZXMC3A17DN8TA from Diodes Incorporated (formerly Zetex Semiconductors) is a dual-channel complementary enhancement-mode MOSFET in SOIC-8 package, integrating one N-channel (30 V, 5.4 A, R_DS(on) = 50 mΩ @ V_GS = 10 V) and one P-channel (–30 V, –4.4 A, R_DS(on) = 70 mΩ @ V_GS = –10 V) device for half-bridge or level-shifting power management. It delivers fast switching (t_d(off) = 16 ns N-ch / 29.2 ns P-ch), low gate charge (Q_g = 12.2 nC N-ch / 15.8 nC P-ch), and operates from –55 °C to +150 °C - used in compact DC-DC converters and motor drive H-bridge legs.

For engineers reviewing the ZXMC3A17DN8TA datasheet, ZXMC3A17DN8TA pinout, ZXMC3A17DN8TA application, or ZXMC3A17DN8TA equivalent, key selection criteria include verified dual-channel thermal derating (R_JA = 60–100 °C/W depending on PCB layout), body diode reverse recovery (t_rr = 18.8 ns N-ch / 19.5 ns P-ch), and gate threshold symmetry (V_GS(th) = +1.0 V / –1.0 V) enabling matched logic-level drive.

Technical Context

This dual MOSFET implements trench-gate silicon technology with separate, electrically isolated N- and P-channel dies in a single SOIC-8 package. Its complementary structure enables synchronous rectification and bidirectional current control without external level shifters, supported by matched gate thresholds and low Q_gd/Q_gs ratios (2.4/1.7 nC N-ch; 2.8/1.8 nC P-ch).

The device targets low-voltage (<30 V) power stages where conduction loss balance matters: R_DS(on) ratio (50 mΩ : 70 mΩ) and continuous current rating asymmetry (5.4 A vs –4.4 A) reflect optimized die sizing for typical buck converter high-side (N-ch) and low-side (P-ch) roles under 1.25 W ambient-limited dissipation.

Key Specifications

Pinout & Package

SOIC-8 package (JEDEC MS-012AA), 5.0 mm × 4.0 mm × 1.5 mm body, gull-wing leads, 1.27 mm pitch. Dual-channel layout with isolated source terminals enables independent gate control and current sensing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary dual-MOSFET applications.

Compared with DMC2038LSD-13 and SI6926ADQ-T1-GE3, ZXMC3A17DN8TA offers the best balance of threshold matching and gate charge for logic-level 3.3 V controllers, while its 50/70 mΩ R_DS(on) provides superior efficiency in 24 V motor drive and 12 V buck applications where thermal resistance is tightly managed.

Availability

ZXMC3A17DN8TA is available at Aetrix Electronics and suitable for motor drive H-bridges, LCD backlight boost converters, USB-C power switches, and synchronous buck regulators requiring stable component supply and long-term industrial availability.

Supply support for ZXMC3A17DN8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its portfolio of high-performance analog and discrete semiconductors for power management and signal conditioning.

This device belongs to Zetex's trench-MOSFET product line, engineered specifically for high-efficiency, low-voltage DC-DC conversion and motor control where fast switching, low gate drive, and thermal robustness are critical.

FAQ

What is the maximum safe operating junction temperature for ZXMC3A17DN8TA?

The absolute maximum junction temperature is +150 °C, with derating beginning at +25 °C ambient. At 2.1 W power dissipation (N-channel, FR4 PCB), junction temperature rise is 126 °C (R_JA = 60 °C/W), limiting usable ambient to +24 °C unless heatsinking or airflow is added. Thermal shutdown is not integrated; external monitoring is required above 135 °C.

Can ZXMC3A17DN8TA be used in a synchronous rectifier configuration with a single PWM controller?

Yes - its matched ±1.0 V gate thresholds allow both channels to be driven from a single 3.3 V logic signal via complementary inverters or dedicated dual-output gate drivers like the TC4427. The N-channel must be configured as low-side switch and P-channel as high-side; cross-conduction is prevented by inherent threshold symmetry and typical 100–200 ns dead time.

Is the SOIC-8 package lead-free and RoHS compliant?

Yes - ZXMC3A17DN8TA is manufactured with 100 % matte tin lead finish and complies with EU RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1). The package uses halogen-free molding compound and meets IPC/JEDEC J-STD-033 handling requirements for reflow up to 260 °C peak.

Does the device include integrated ESD protection on gate terminals?

No - ZXMC3A17DN8TA has no built-in gate oxide ESD protection. Gate-source voltage must be limited to ±20 V per absolute maximum ratings, and external 10 kΩ series resistors plus 10 V Zener clamps are recommended for board-level ESD immunity per IEC 61000-4-2 Level 4 (8 kV contact). Layout must minimize gate loop inductance to prevent ringing-induced failure.