Diodes Incorporated ZXMC3AM832TA
- Part No.:
- ZXMC3AM832TA
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-VDFN Exposed Pad
- Datasheet:
-
ZXMC3AM832TA.pdf
- Description:
- MOSFET N/P-CH 30V 2.9A/2.1A 8MLP
- Quantity:
- Payment:

- Shipping:

Inventory:153
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Product details
Overview
ZXMC3AM832TA from Diodes Incorporated (formerly Zetex Semiconductors) is a complementary dual-channel 30V enhancement-mode MOSFET in a 3mm × 2mm MLP package, integrating one N-channel (RDS(on) = 0.12 Ω @ VGS = 10 V, ID = 3.7 A) and one P-channel (RDS(on) = 0.21 Ω @ VGS = −10 V, ID = −2.7 A) die. It delivers fast switching (td(off) = 6.6 ns N-ch / 11.3 ns P-ch), low gate charge (Qg = 3.9 nC / 5.15 nC), and operates in motor control and LCD backlight inverter circuits.
For engineers reviewing the ZXMC3AM832TA datasheet, ZXMC3AM832TA pinout, ZXMC3AM832TA application, or ZXMC3AM832TA equivalent, key selection criteria include dual-channel complementary conduction, thermal resistance under defined PCB copper area (RθJA = 51 °C/W with 8 cm² 2 oz Cu), and validated body diode recovery (Qrr = 13.0 nC / 14.8 nC).
Technical Context
This device implements two independent enhancement-mode MOSFETs on a single substrate-N-channel with VGS(th) = 1 V and P-channel with VGS(th) = −0.8 V-enabling synchronous half-bridge or H-bridge configurations without external level-shifting. Gate drive compatibility spans 2.5–10 V for N-ch and −2.5 to −10 V for P-ch.
Thermal design relies on exposed pad attachment: RθJA varies from 41.7 °C/W (85 cm² 2 oz Cu) to 125 °C/W (minimal copper), and power dissipation ranges from 1.0 W to 2.45 W depending on layout. Dual-die operation is thermally de-rated per note (g), requiring separate copper islands per channel.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| N-ch RDS(on) | 0.12 Ω @ VGS = 10 V, ID = 2.5 A - enables ≤0.75 W conduction loss at 2.5 A |
| P-ch RDS(on) | 0.21 Ω @ VGS = −10 V, ID = −1.4 A - supports bidirectional current control in low-side switch roles |
| N-ch Qg | 3.9 nC @ VGS = 10 V - reduces gate driver power demand and switching transition time |
| P-ch Qg | 5.15 nC @ VGS = −10 V - matches N-ch timing when driven with matched gate resistors |
| VDS rating | ±30 V - suitable for 24 V rail systems with margin against transients |
| Body diode Qrr | 13.0 nC (N-ch), 14.8 nC (P-ch) - limits reverse recovery losses in PWM-driven inductive loads |
| Package thermal RθJA | 51 °C/W (8 cm² 2 oz Cu) - defines max continuous power (2.45 W) before Tj exceeds 150 °C |
Pinout & Package
Supplied in a 3 mm × 2 mm Micro Leaded Package (MLP832) with exposed thermal pad on underside. The 8-pin outline features dual-source/drain/gate terminals arranged for independent channel routing and thermal isolation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | N-channel drain | Main high-side current path for N-MOS; connects to load supply rail |
| D2 | P-channel drain | Main low-side current path for P-MOS; connects to load return or ground |
| G1 | N-channel gate | Control input referenced to S1; requires ≥1 V threshold to turn on |
| G2 | P-channel gate | Control input referenced to S2; requires ≤−0.8 V threshold to turn on |
| S1 | N-channel source | Reference node for N-MOS; ties to load midpoint or bootstrap capacitor |
| S2 | P-channel source | Reference node for P-MOS; typically connected to system ground or floating return |
| Exposed Pad | Thermal & electrical ground | Must be soldered to ≥8 cm² 2 oz copper for rated RθJA = 51 °C/W |
Key Features
| Feature | Design Value |
|---|---|
| Complementary dual-die integration | Single-package N+P pair eliminates layout mismatch and timing skew in bridge topologies |
| Low gate threshold voltage | VGS(th) = 1 V (N) / −0.8 V (P) enables direct logic-level drive from 3.3 V or 5 V microcontrollers |
| Fast switching with low Qgd | Qgd = 0.9 nC (N), 0.92 nC (P) minimizes Miller-induced shoot-through risk in half-bridge operation |
| Optimized for space-constrained PCBs | 3 mm × 2 mm footprint saves >60% board area vs. SO-8 dual MOSFETs while maintaining thermal performance |
| Validated body diode recovery | trr = 17.7 ns (N), 18.6 ns (P) supports high-frequency (>100 kHz) PWM in backlight inverters |
Applications
| Motor Control | LCD Backlight Inverter |
|---|---|
Use Scenario: Driving small DC brushed motors in portable medical pumps and precision lab instruments. IC Role / Device Role / Timing Role: Half-bridge power stage where N-ch switches high-side and P-ch switches low-side in synchronous rectification mode. Use Value: Low RDS(on) and fast toff reduce conduction and switching losses, enabling >92% efficiency at 2 A load current. | Use Scenario: Generating AC drive for cold-cathode fluorescent lamp (CCFL) backlights in industrial HMIs and ruggedized displays. IC Role / Device Role / Timing Role: High-frequency (100–200 kHz) push-pull switch controlling resonant tank current. Use Value: Matched N/P timing and low Qg allow clean zero-voltage switching transitions, minimizing EMI and transformer stress. |
| MOSFET Gate Driver Interface | Power Management Load Switch |
Use Scenario: Level-shifting and buffering gate signals between low-voltage controllers (e.g., ARM Cortex-M0+) and higher-power external MOSFETs. IC Role / Device Role / Timing Role: Dual-channel buffer with independent source/sink capability for driving N+P external FET gates. Use Value: Low input capacitance (Ciss = 190/204 pF) and fast rise/fall times (tr/tf = 2.3/2.9 ns N-ch) preserve signal integrity up to 10 MHz. | Use Scenario: Controlled hot-swap and sequencing of 3.3 V/5 V subsystems in battery-powered IoT edge nodes. IC Role / Device Role / Timing Role: Dual independent load switches - N-ch for high-side enable, P-ch for low-side discharge path. Use Value: Independent gate control allows precise timing of power-up/down sequences, preventing bus contention during state transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary dual-MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZXMC3AMCTA | Successor part with improved RDS(on) (N: 0.095 Ω, P: 0.175 Ω), lower Qg, and updated thermal spec (RθJA = 45 °C/W) | Same 3×2 MLP package; validated for new designs requiring higher efficiency or tighter thermal margins | Select for new designs-ZXMC3AM832TA is marked "Not Recommended for New Design" per datasheet. |
| DMC3025LSD | 30 V dual N-ch only (not complementary); RDS(on) = 0.025 Ω @ 10 V; different pinout (SO-8) | Requires external P-ch or level shifter for full bridge; unsuitable for true complementary switching | Only viable if topology permits dual-N configuration with external gate control logic. |
Compared with ZXMC3AMCTA, this part offers lower performance and higher thermal resistance; compared with DMC3025LSD, it provides integrated complementarity but less conductance per channel-making ZXMC3AM832TA appropriate only for legacy redesigns where footprint and pinout compatibility are mandatory.
Availability
ZXMC3AM832TA is available at Aetrix Electronics and suitable for motor control, LCD backlight inverters, gate driver interfaces, and power management load switching requiring stable component supply across industrial and embedded production cycles.
Supply support for ZXMC3AM832TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its portfolio of high-performance discrete semiconductors, emphasizing precision analog, power management, and signal integrity solutions for industrial and automotive markets.
This device belongs to Zetex's MPPS™ (Miniature Package Power Solutions) product line, engineered specifically for space-constrained, high-efficiency DC-DC conversion and low-voltage motor drive applications where thermal density and layout simplicity are critical.
FAQ
What is the maximum continuous drain current for each channel at 70°C ambient?
At TA = 70°C, derating from 2.45 W (TA = 25°C, 2 oz Cu) applies: ΔT = 45°C × 19.6 mW/°C = 0.882 W loss budget. For the N-channel, ID = √(PD/RDS(on)) = √(0.882/0.12) ≈ 2.71 A. For the P-channel, ID = √(0.882/0.21) ≈ 2.05 A. These values assume both channels operate simultaneously with shared thermal path.
Can ZXMC3AM832TA be used in a synchronous buck converter topography?
No-this device lacks the internal bootstrap diode or integrated high-side gate driver required for standard synchronous buck operation. Its complementary N+P structure suits half-bridge or H-bridge configurations where both switches control the same node, not buck regulators where the high-side switch requires floating gate drive relative to its source.
Is the exposed thermal pad electrically isolated or tied to a specific terminal?
The exposed pad is internally connected to the source terminals (S1 and S2) and must be soldered to a common ground plane. It is not electrically isolated; connecting it to system ground improves thermal performance and provides low-inductance return paths for both channels' source currents.
Why does the datasheet list multiple RθJA values, and which one should be used for layout design?
Multiple RθJA values reflect test conditions: 51 °C/W assumes 8 cm² 2 oz Cu split into two 4 cm² islands (one per die), matching real-world dual-channel thermal isolation. Use this value for initial layout sizing; verify with IR imaging or simulation using the exact copper area and thickness specified in note (b) for transient reliability.
ZXMC3AM832TA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-VDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 2.9A, 2.1A
- Rds On (Max) @ Id, Vgs:
- 120mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 3.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 190pF @ 25V
- Power - Max:
- 1.7W
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-MLP (3x2)
ZXMC3AM832TA FAQ
1.How can I place an order for ZXMC3AM832TA through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXMC3AM832TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXMC3AM832TA reliable?
The price and inventory of ZXMC3AM832TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMC3AM832TA is usually 5 days.
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ZXMC3AM832TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXMC3AM832TA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXMC3AM832TA?
For technical support, including ZXMC3AM832TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMC3AM832TA requirements.
6.How does Aetrix verify that ZXMC3AM832TA is sourced from the original manufacturer or authorized distributors?
All ZXMC3AM832TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMC3AM832TA meets industry standards.
7.What is the process for return or replacement of ZXMC3AM832TA?
All ZXMC3AM832TA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMC3AM832TA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXMC3AM832TA part is unused and in its original packaging.
Return procedure for ZXMC3AM832TA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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