Diodes Incorporated ZXMC3AMCTA

Overview

ZXMC3AMCTA from Diodes Incorporated is a 30V complementary pair enhancement-mode MOSFET in a DFN3020B-8 package, integrating an N-channel (Q1: 3.7A, 120mΩ @ 10V) and P-channel (Q2: –2.7A, 210mΩ @ –10V) device on a single die. It delivers low R_DS(on), fast switching (t_D(off) = 6.6ns Q1 / 11.3ns Q2), and thermally efficient operation (R_θJA = 51.0°C/W with 8 cm² 2oz Cu), targeting compact DC-DC converter half-bridges and motor drive H-bridge legs.

For engineers reviewing the ZXMC3AMCTA datasheet, ZXMC3AMCTA pinout, ZXMC3AMCTA application, or ZXMC3AMCTA equivalent, key selection criteria include dual-channel complementary conduction capability, 0.8mm profile for space-constrained portable power stages, AEC-Q101 qualification for automotive-grade reliability, and verified gate charge values (Q_g = 3.9nC Q1 / 6.4nC Q2) enabling precise PWM timing control.

Technical Context

This dual MOSFET implements independent N- and P-channel enhancement-mode transistors sharing a common DFN3020B-8 thermal pad and leadframe. The N-channel (Q1) features V_GS(th) = 1.0–3.0V and g_fs = 3.5S at 10V, while the P-channel (Q2) has V_GS(th) = –1.0 to –3.0V and g_fs = 2.48S at –10V - enabling matched gate drive design for synchronous buck or H-bridge topologies.

Thermal performance is defined across three PCB configurations: R_θJA = 83.3°C/W (28mm × 28mm, 2oz Cu, one active die), 51.0°C/W (same board, short-duration pulse), and 73.5°C/W (31mm × 31mm, 1oz Cu, two active die). Safe operating area (SOA) curves confirm pulsed current capability up to I_DM = 13A (Q1) and –9.2A (Q2) under 300µs pulses.

Key Specifications

Pinout & Package

Package: DFN3020B-8, 3.0mm × 2.0mm × 0.8mm, thermally enhanced with exposed drain pads (D1/D2) and NiPdAu pre-plated terminals. UL 94V-0 rated, MSL Level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Compared with DMC3025LSD-13 and SI6926ADQ-T1-GE3, ZXMC3AMCTA offers the smallest footprint (3.0×2.0mm) and automotive qualification at the expense of higher R_DS(on), making it optimal for space-limited AEC-Q101 designs below 5W per channel.

Availability

ZXMC3AMCTA is available at Aetrix Electronics and suitable for LCD backlight inverters, portable motor control systems, and synchronous buck converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for ZXMC3AMCTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

ZXMC3AMC belongs to Diodes' PowerMOS™ complementary FET product line, engineered specifically for high-density, thermally constrained power conversion in automotive, industrial, and portable electronics.

FAQ

What is the maximum continuous drain current for each channel at 70°C ambient?

At T_A = 70°C, the N-channel (Q1) supports 3.0A continuous drain current and the P-channel (Q2) supports –2.2A, as specified in the Absolute Maximum Ratings table under "Continuous Drain Current T_A = 70°C". These values assume operation on a 28mm × 28mm FR4 PCB with 2oz copper and one active die.

Does ZXMC3AMCTA require external gate resistors for stable switching?

Yes - gate resistors are recommended to dampen ringing and control dV/dt. With Q_g = 3.9nC (Q1) and 6.4nC (Q2), a 6Ω resistor (per datasheet test condition) limits peak gate current to ~2A and yields t_r/t_f of 2.3ns/2.8ns, preventing shoot-through in half-bridge configurations.

Can ZXMC3AMCTA be used in linear regulator applications?

No - this device is optimized for switching operation only. Its Safe Operating Area (SOA) curve shows limited DC capability (≤1.13W with two active dies), and R_DS(on) variation over temperature (±20% from –55°C to +150°C) makes it unsuitable for precision linear regulation.

How is thermal performance affected when both channels operate simultaneously?

When both Q1 and Q2 conduct at equal power, R_θJA degrades from 51.0°C/W (one active die) to 73.5°C/W (two active die on 31mm × 31mm, 1oz Cu board), reducing maximum allowable power dissipation from 2.45W to 1.70W before reaching 150°C junction temperature.