Diodes Incorporated ZXMC3F31DN8TA

Overview

ZXMC3F31DN8TA from Diodes Incorporated is a complementary dual enhancement-mode MOSFET in SO8 package, integrating an N-channel (30 V, 7.3 A, R_DS(on) = 24 mΩ @ V_GS = 10 V) and P-channel (–30 V, –5.3 A, R_DS(on) = 45 mΩ @ V_GS = –10 V) device on a single die. It supports bidirectional load switching and synchronous rectification in compact DC-DC converters and battery-powered motor control.

For engineers reviewing the ZXMC3F31DN8TA datasheet, ZXMC3F31DN8TA pinout, ZXMC3F31DN8TA application, or ZXMC3F31DN8TA equivalent, this part is selected for low-profile power management where 4.5 V gate drive capability, matched Q1/Q2 switching timing (t_d(off) = 16 ns / 30 ns), and thermal resistance R_θJA = 60 °C/W (two-die configuration) are critical.

Technical Context

This device implements a monolithic complementary pair with independent gate terminals and shared source connections per channel (S1 for Q1, S2 for Q2), enabling half-bridge or high-side/low-side configurations without external isolation. Its trench MOSFET architecture delivers low R_DS(on) while maintaining fast switching: Q1 t_r = 3.3 ns, Q2 t_f = 21 ns, with matched total gate charge (Q_g = 12.9 nC / 12.7 nC).

Thermal design leverages dual-die SO8 layout with R_θJL = 53 °C/W to solder point, supporting continuous operation up to T_j = 150 °C. Body diode parameters-V_SD = 0.82 V (Q1), –0.82 V (Q2), Q_rr = 4.8 nC / 11.5 nC-are characterized for synchronous rectifier recovery and reverse conduction in buck or H-bridge topologies.

Key Specifications

Pinout & Package

SO8 package (JEDEC MS-012AC, 5.0 mm × 4.0 mm × 1.75 mm max height) with exposed drain pads for Q1 (D1, D2) and thermal enhancement. Pin 1 marked via notch or dot; pin numbering follows standard SOIC counterclockwise from top-left corner.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary dual MOSFET applications.

Compared with DMC2038LVT-7 and SI6926ADQ-T1-GE3, ZXMC3F31DN8TA offers the lowest combined conduction + switching loss in 1 MHz DC-DC converters due to its balanced Q_g/R_DS(on) trade-off and fully specified Q_rr, making it optimal for space-constrained synchronous buck designs.

Availability

ZXMC3F31DN8TA is available at Aetrix Electronics and suitable for DC-DC converters, motor control modules, and USB-C power delivery systems requiring stable component supply and RoHS-compliant packaging.

Supply support for ZXMC3F31DN8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor manufacturer specializing in discrete, analog, and mixed-signal solutions, ISO 9001 and IATF 16949 certified, with design centers across Asia, Europe, and the Americas.

This device belongs to Zetex's TrenchMOS™ power management portfolio, engineered for high-efficiency, low-voltage power conversion in portable and industrial equipment where board space and thermal headroom are constrained.

FAQ

What is the maximum safe operating voltage for ZXMC3F31DN8TA in continuous DC operation?

The absolute maximum V_DS rating is ±30 V for both channels, verified under pulsed conditions with T_j ≤ 150 °C. Continuous DC operation must remain within 80 % of rating (≤±24 V) to ensure long-term reliability with margin against voltage spikes and thermal derating.

Can ZXMC3F31DN8TA be used in a synchronous buck converter as both high-side and low-side switches?

No - the internal topology connects S1 (N-source) and S2 (P-source) to separate pins; it does not integrate a common-source configuration. It supports high-side P-channel + low-side N-channel arrangements only when external routing isolates the sources, not true integrated half-bridge operation.

Is the body diode in the P-channel device rated for continuous reverse conduction?

Yes - the P-channel body diode supports continuous source current I_S = –3.2 A at T_A = 25 °C, with V_SD = –0.82 V typical at –2 A. Reverse recovery is characterized (t_rr = 16.5 ns, Q_rr = 11.5 nC), confirming suitability for synchronous rectification in buck topologies.

Does ZXMC3F31DN8TA require a gate resistor for ESD protection during manual handling?

No - the device incorporates on-chip ESD protection (HBM > 2 kV), but a 10 Ω gate resistor is recommended in circuit design to dampen ringing and limit peak gate current during fast switching; this resistor does not serve ESD mitigation but improves signal integrity and reduces electromagnetic emissions.