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Diodes Incorporated ZXMC4559DN8TA
- Part No.:
- ZXMC4559DN8TA
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
ZXMC4559DN8TA.pdf
- Description:
- MOSFET N/P-CH 60V 3.6A/2.6A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:572
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Product details
Overview
ZXMC4559DN8TA from Diodes Incorporated is a complementary dual-channel 60V enhancement-mode MOSFET in SO-8 package, integrating one N-channel (60V, 55mΩ @ 10V) and one P-channel (−60V, 105mΩ @ −10V) device. It delivers 4.7A/−3.9A continuous drain current at 25°C, supports fast switching (tD(off) = 26.2ns Q2 / 35ns Q1), and targets high-efficiency DC-DC converters and power management circuits.
For engineers reviewing the ZXMC4559DN8TA datasheet, ZXMC4559DN8TA pinout, ZXMC4559DN8TA application, or ZXMC4559DN8TA equivalent, key selection criteria include complementary channel matching, low RDS(on) asymmetry, SO-8 thermal derating (58°C/W), body diode recovery (Qrr = 21.4nC / 39.6nC), and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This dual MOSFET implements independent N- and P-channel enhancement-mode structures sharing a common SO-8 leadframe. Each channel features fully specified gate threshold (VGS(th) = +1.0V / −1.0V), guaranteed dynamic parameters (Ciss = 1063pF / 1021pF), and matched turn-off delay (26.2ns / 35ns) under standardized test conditions (VDD = ±30V, ID = ±1.0A, RG = 6Ω).
The device uses green molding compound (UL 94V-0), tin-finished copper leadframe, and achieves moisture sensitivity level 1. Its internal schematic shows isolated source terminals (S1/S2), separate gates (G1/G2), and distinct drain connections (D1/D2), enabling half-bridge, synchronous buck, and H-bridge topologies without external isolation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V (N-ch), −60V (P-ch): Enables 24V–48V bus designs with 2× safety margin |
| RDS(on) | 55mΩ @ 10V (Q2), 105mΩ @ −10V (Q1): Sets conduction loss in high-side/low-side paths |
| ID (cont) | 4.7A (Q2), −3.9A (Q1) at 25°C: Defines maximum steady-state load current per channel |
| Qg | 20.4nC (Q2), 24.2nC (Q1) at ±10V: Determines gate drive power and switching speed trade-off |
| RθJA | 58°C/W (min pad layout): Limits junction temperature rise under 2.1W dissipation |
| tr/tf | 4.1ns/10.6ns (Q2), 4.1ns/10ns (Q1): Constrains EMI generation and dead-time requirements |
| Qrr | 21.4nC (Q2), 39.6nC (Q1): Impacts reverse recovery loss and cross-conduction risk in synchronous rectification |
Pinout & Package
Package: SO-8, surface-mount, molded plastic with UL 94V-0 rating, 0.074g mass, and tin-finished copper leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | P-channel gate | Controls P-MOSFET turn-on; requires negative voltage relative to S1 for full enhancement |
| 2 (S1) | P-channel source | Reference node for P-ch gate drive; connects to high-side rail in buck configurations |
| 3 (D2) | N-channel drain | High-current output node; ties to input bus in low-side switch applications |
| 4 (S2) | N-channel source | Reference node for N-ch gate drive; common return path for both channels' loads |
| 5 (D1) | P-channel drain | High-current output node; used as high-side switch output in half-bridge topologies |
| 6 (G2) | N-channel gate | Controls N-MOSFET turn-on; referenced to S2; compatible with standard 0–10V logic drivers |
| 7 (S1) | P-channel source (duplicate) | Second connection to P-ch source for improved current sharing and thermal distribution |
| 8 (D2) | N-channel drain (duplicate) | Second connection to N-ch drain for reduced package inductance and enhanced current handling |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive power modules requiring −40°C to +125°C operation and vibration resistance |
| Complementary channel pairing | Matched VGS(th) polarity and magnitude enables single-supply gate driver compatibility in bridge circuits |
| Low Ciss/Coss ratio | 10.2:1 (Q2), 12.3:1 (Q1) improves Miller immunity and reduces gate drive energy loss |
| Green construction | Halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb) meets automotive OEM environmental mandates |
| Body diode optimization | Qrr = 21.4nC (Q2) / 39.6nC (Q1) enables efficient synchronous rectification in buck converters |
Applications
| Automotive Body Control Module | Synchronous Buck Converter |
|---|---|
|
Use Scenario: Driving LED headlamps and solenoid valves in 12V/24V vehicle electrical systems. IC Role / Device Role / Timing Role: Dual-channel half-bridge switch controlling high-side (P-ch) and low-side (N-ch) power paths. Use Value: AEC-Q101 qualification ensures reliability across temperature cycling and mechanical shock; matched RDS(on) minimizes thermal imbalance between channels. |
Use Scenario: Regulating 12V input to 3.3V/5V rails for infotainment and ADAS subsystems. IC Role / Device Role / Timing Role: Integrated high-side (P-ch) and low-side (N-ch) switch replacing discrete solutions. Use Value: Low Qg (20.4nC/24.2nC) enables >500kHz switching; SO-8 footprint reduces PCB area vs. dual-SOIC layout. |
| Industrial Motor Driver | USB-C Power Delivery Sink |
|
Use Scenario: Controlling brushed DC motors in factory automation equipment with bidirectional PWM. IC Role / Device Role / Timing Role: H-bridge leg with independent gate control for forward/reverse commutation. Use Value: Fast tD(off) (26.2ns/35ns) allows tight dead-time control; 60V rating supports 48V motor bus with margin. |
Use Scenario: Implementing programmable power supply interface in portable electronics with 20V max input. IC Role / Device Role / Timing Role: Input protection and load switch managing VBUS path and reverse current blocking. Use Value: Complementary channels enable active OR-ing and reverse-polarity protection; low RDS(on) limits voltage drop below 100mV at 2A. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LSD-13 | Lower RDS(on) (32mΩ/60mΩ) but higher Qg (28nC/34nC); SO-8, AEC-Q101 | Better conduction loss, worse switching loss; requires stronger gate driver | Select when thermal budget favors lower RDS(on) over gate drive capability |
| SI6926ADQ-T1-GE3 | Higher VDSS (±80V); asymmetric RDS(on) (40mΩ/110mΩ); no AEC-Q101 | Supports wider input range but lacks automotive qualification; mismatched channel performance | Select for industrial 48V systems where qualification is not required and voltage margin is critical |
Compared with DMC2038LSD-13 and SI6926ADQ-T1-GE3, ZXMC4559DN8TA offers balanced RDS(on)/Qg trade-off and mandatory AEC-Q101 compliance-making it optimal for cost-sensitive automotive power stages where gate drive simplicity and qualification are non-negotiable.
Availability
ZXMC4559DN8TA is available at Aetrix Electronics and suitable for automotive body control modules, industrial motor drivers, synchronous buck converters, and USB-C power delivery sinks requiring stable component supply and long-term lifecycle support.
Supply support for ZXMC4559DN8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Malaysia, and Taiwan.
ZXMC4559DN8TA belongs to Diodes' ZXMC family of complementary MOSFETs engineered specifically for space-constrained, high-reliability power conversion in automotive and industrial environments.
FAQ
What is the maximum continuous drain current for each channel at 100°C junction temperature?
At TJ = 100°C, the N-channel (Q2) supports 2.7A and the P-channel (Q1) supports −2.2A, calculated using the 58°C/W RθJA value and 2.1W maximum power dissipation with linear derating from 25°C ratings.
Can ZXMC4559DN8TA be used in a bootstrap-gated high-side N-channel configuration?
No-this device integrates a native P-channel high-side switch, eliminating the need for bootstrap circuitry. Using it as a high-side N-MOSFET would require external gate voltage boosting beyond its ±20V VGS rating and is not supported by its internal structure or SO-8 pinout.
Is the SO-8 package thermally enhanced compared to standard SO-8 footprints?
Yes-the datasheet specifies two thermal ratings: 100°C/W on minimal pad layout and 58°C/W on recommended layout (2oz copper, 1-inch square thermal pad), confirming optimized thermal vias and copper area utilization per Diodes' AP02001 guidelines.
Does the device support gate drive from 3.3V microcontrollers?
The N-channel threshold is 1.0V (typical), but RDS(on) rises to 75mΩ at VGS = 4.5V-insufficient for full enhancement. For reliable 3.3V drive, an external level shifter or gate driver is required to achieve ≥10V for Q2 and ≤−10V for Q1.
ZXMC4559DN8TA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 3.6A, 2.6A
- Rds On (Max) @ Id, Vgs:
- 55mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 20.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1063pF @ 30V, 1021pF @ 30V
- Power - Max:
- 1.25W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
ZXMC4559DN8TA FAQ
1.How can I place an order for ZXMC4559DN8TA through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXMC4559DN8TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXMC4559DN8TA reliable?
The price and inventory of ZXMC4559DN8TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMC4559DN8TA is usually 5 days.
3.What payment methods are accepted for ZXMC4559DN8TA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMC4559DN8TA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZXMC4559DN8TA?
ZXMC4559DN8TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXMC4559DN8TA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXMC4559DN8TA?
For technical support, including ZXMC4559DN8TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMC4559DN8TA requirements.
6.How does Aetrix verify that ZXMC4559DN8TA is sourced from the original manufacturer or authorized distributors?
All ZXMC4559DN8TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMC4559DN8TA meets industry standards.
7.What is the process for return or replacement of ZXMC4559DN8TA?
All ZXMC4559DN8TA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMC4559DN8TA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXMC4559DN8TA part is unused and in its original packaging.
Return procedure for ZXMC4559DN8TA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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