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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated ZXMC4559DN8TC

Name: ZXMC4559DN8TC
Brand: Diodes Incorporated
SKU: ZXMC4559DN8TC
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXMC4559DN8TC

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: ZXMC4559DN8TC.pdf

Description:: MOSFET N/P-CH 60V 3.6A/2.6A 8SO

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Product details

Overview

ZXMC4559DN8TC from Diodes Incorporated is a complementary dual MOSFET in SO-8 package, integrating an N-channel (60 V, 55 mΩ @ 10 V) and P-channel (−60 V, 105 mΩ @ −10 V) enhancement-mode device. It delivers 4.7 A continuous drain current (Q2) and −3.9 A (Q1), with fast switching (t_D(off) = 26.2 ns / 35 ns), low input capacitance (C_iss = 1063 / 1021 pF), and AEC-Q101 qualification-used in synchronous buck converters and dual-rail power management.

For engineers reviewing the ZXMC4559DN8TC datasheet, ZXMC4559DN8TC pinout, ZXMC4559DN8TC application, or ZXMC4559DN8TC equivalent, key selection criteria include complementary channel pairing, SO-8 thermal performance (R_θJA = 58 °C/W), gate charge asymmetry (Q_g = 20.4 nC / 24.2 nC), and body diode recovery (Q_rr = 21.4 nC / 39.6 nC) for high-efficiency DC-DC topologies.

Technical Context

This dual MOSFET implements a matched complementary pair in a single SO-8 footprint, enabling compact half-bridge and synchronous rectifier designs. Its N-channel Q2 features V_GS(th) = 1.0 V and R_DS(on) = 55 mΩ at V_GS = 10 V; P-channel Q1 has V_GS(th) = −1.0 V and R_DS(on) = 105 mΩ at V_GS = −10 V-ensuring balanced turn-on timing under typical gate drive conditions.

The device supports bidirectional current handling via integrated body diodes (V_SD = ±0.85 V), with reverse recovery optimized for hard-switched converters (t_rr = 22 ns / 29.2 ns, Q_rr = 21.4 nC / 39.6 nC). Thermal design leverages SO-8's 58 °C/W R_θJA on minimum pad layout, and its AEC-Q101 qualification confirms suitability for automotive power modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V (N-ch), −60 V (P-ch): Enables 24–48 V bus applications with 2× safety margin
R_DS(on)	55 mΩ @ 10 V (Q2), 105 mΩ @ −10 V (Q1): Sets conduction loss in high-side/low-side paths
I_D (t < 10 s)	4.7 A (Q2), −3.9 A (Q1): Supports peak load currents in compact DC-DC stages
C_iss	1063 pF (Q2), 1021 pF (Q1): Determines gate drive strength requirement and switching speed limit
Q_g	20.4 nC (Q2), 24.2 nC (Q1): Directly impacts gate driver power dissipation and dead-time optimization
t_D(off)	26.2 ns (Q2), 35 ns (Q1): Constrains minimum achievable switching period in PWM control
R_θJA	58 °C/W (min pad layout): Defines maximum power dissipation before thermal derating at +25 °C ambient

Pinout & Package

Package: SO-8, surface-mount, molded plastic (UL 94V-0), 0.074 g mass, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (G1)	P-channel gate	Controls turn-on of high-side P-MOSFET; referenced to source (Pin 5)
2 (S1)	P-channel source	Connects to positive rail in high-side switch configuration
3 (D2)	N-channel drain	Common drain node for both FETs; ties to output in half-bridge
4 (S2)	N-channel source	Connects to ground or low-side return path
5 (D1)	P-channel drain	Shared drain with N-channel (Pin 3); forms common switching node
6 (G2)	N-channel gate	Controls turn-on of low-side N-MOSFET; referenced to source (Pin 4)
7 (S1/D2)	Internal connection	Die bond wire linking P-source (Pin 2) and N-drain (Pin 3) - not externally accessible
8 (D2/S1)	Internal connection	Die bond wire linking N-source (Pin 4) and P-drain (Pin 5) - not externally accessible

Key Features

Feature	Design Value
Complementary N+P pairing	Single SO-8 package replaces discrete half-bridge, reducing PCB area by >40% vs. dual-SOIC
AEC-Q101 qualified	Validated for automotive power modules including body control units and ADAS power supplies
Low Q_g/R_DS(on) ratio	Q_g/R_DS(on) = 369 (Q2) and 230 (Q1) pC/mΩ - balances switching loss vs. conduction loss
Green compound & RoHS	Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets IEC 61249-2-21
Optimized body diode	Q_rr = 21.4 nC (Q2), 39.6 nC (Q1) enables ZVS-capable operation in resonant topologies

Applications

Automotive Body Control Module

Synchronous Buck Converter

Use Scenario: Powering window lift motors and seat position actuators with bidirectional voltage control.

IC Role / Device Role / Timing Role: Dual-channel half-bridge switch providing H-bridge motor drive with shoot-through protection.

Use Value: Complementary threshold matching (±1.0 V) and matched C_iss enable precise dead-time control, minimizing cross-conduction losses at 20–100 kHz PWM.

Use Scenario: 12 V input to 3.3 V/5 V point-of-load regulation in industrial PLCs.

IC Role / Device Role / Timing Role: Integrated high-side P-MOSFET and low-side N-MOSFET performing synchronous rectification.

Use Value: Low R_DS(on) (55/105 mΩ) and fast t_D(off) (26.2/35 ns) reduce total power loss to <0.8 W at 3 A load, improving efficiency to >92%.

LCD Backlight Inverter

USB-C Power Delivery Sink

Use Scenario: Driving CCFL or LED strings requiring regulated AC-like current waveforms.

IC Role / Device Role / Timing Role: Half-bridge inverter stage generating 20–100 kHz square-wave drive for transformer-coupled backlight circuits.

Use Value: Matched dynamic characteristics (C_iss, Q_g) ensure symmetrical rise/fall times, reducing EMI generation and transformer core saturation risk.

Use Scenario: Input power path switching in USB-C PD sink adapters supporting 20 V/3 A profiles.

IC Role / Device Role / Timing Role: Reverse-polarity and overvoltage protection switch placed between connector and primary regulator.

Use Value: −60 V P-channel rating withstands transient surges up to ±40 V; low R_DS(on) limits insertion loss to <120 mV at 3 A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMC2038LSD-13	SO-8, 60 V/−60 V, R_DS(on) = 48 mΩ/95 mΩ, Q_g = 17.5 nC/21.5 nC, no AEC-Q101	Lower R_DS(on) improves conduction loss but lacks automotive qualification	Select for cost-sensitive industrial DC-DC where AEC-Q101 is not required
SI6926ADQ-T1-GE3	SO-8, 60 V/−60 V, R_DS(on) = 65 mΩ/130 mΩ, Q_g = 22 nC/26 nC, AEC-Q101 qualified	Higher R_DS(on) increases conduction loss but matches qualification and pinout	Select when supply chain diversification is needed and higher R_DS(on) is acceptable

Compared with DMC2038LSD-13 and SI6926ADQ-T1-GE3, ZXMC4559DN8TC offers optimal balance of AEC-Q101 compliance, mid-range R_DS(on), and tightly matched Q_g values-making it preferred for automotive-grade synchronous buck regulators where reliability and thermal predictability are critical.

Availability

ZXMC4559DN8TC is available at Aetrix Electronics and suitable for automotive body control modules, industrial synchronous buck converters, LCD backlight inverters, and USB-C power delivery sinks requiring stable component supply and AEC-Q101 assurance.

Supply support for ZXMC4559DN8TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

ZXMC4559DN8TC belongs to Diodes' ZXMC complementary MOSFET product line, engineered specifically for space-constrained, high-efficiency power conversion in automotive and industrial systems requiring robust thermal performance and AEC-Q101 reliability.

FAQ

What is the maximum continuous drain current for each channel at +70°C ambient?

At T_A = +70°C, the N-channel (Q2) delivers 3.6 A and the P-channel (Q1) delivers −2.6 A under steady-state conditions with FR-4 board and 2 oz copper. This is derived from linear derating of the 4.7 A / −3.9 A ratings at +25°C using the 17 mW/°C factor specified in Note 6 of the datasheet.

Can ZXMC4559DN8TC be used in a bootstrap-gated high-side N-channel configuration?

No-ZXMC4559DN8TC integrates a P-channel high-side FET, eliminating the need for external bootstrap circuitry. Its −60 V V_DSS and −1.0 V V_GS(th) allow direct logic-level gate drive from microcontrollers, simplifying layout versus N-channel high-side solutions requiring floating gate drivers.

Is the SO-8 package lead (Pb)-free and compatible with standard reflow profiles?

Yes-the device uses tin-finished terminals over copper leadframe and complies with J-STD-020 moisture sensitivity level 1. It is fully RoHS-compliant and qualified for standard Pb-free reflow profiles (peak temperature ≤ 260°C, 20–40 sec above 217°C), per Diodes' AP02002 package specification.

How does the body diode recovery performance compare between Q1 and Q2?

Q2 (N-channel) exhibits faster body diode recovery: t_rr = 22 ns and Q_rr = 21.4 nC, versus Q1 (P-channel) at t_rr = 29.2 ns and Q_rr = 39.6 nC. This asymmetry favors use as the synchronous rectifier (Q2) in buck converters, where lower Q_rr reduces turn-on loss during freewheeling.

ZXMC4559DN8TC Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 60V

Current - Continuous Drain (Id) @ 25°C:: 3.6A, 2.6A

Rds On (Max) @ Id, Vgs:: 55mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 20.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 1063pF @ 30V

Power - Max:: 2.1W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

ZXMC4559DN8TC FAQ

1.How can I place an order for ZXMC4559DN8TC through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMC4559DN8TC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMC4559DN8TC reliable?

The price and inventory of ZXMC4559DN8TC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMC4559DN8TC is usually 5 days.

3.What payment methods are accepted for ZXMC4559DN8TC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMC4559DN8TC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXMC4559DN8TC?

ZXMC4559DN8TC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMC4559DN8TC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMC4559DN8TC?

For technical support, including ZXMC4559DN8TC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMC4559DN8TC requirements.

6.How does Aetrix verify that ZXMC4559DN8TC is sourced from the original manufacturer or authorized distributors?

All ZXMC4559DN8TC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMC4559DN8TC meets industry standards.

7.What is the process for return or replacement of ZXMC4559DN8TC?

All ZXMC4559DN8TC units undergo pre-shipment inspection (PSI). If there is an issue with ZXMC4559DN8TC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMC4559DN8TC part is unused and in its original packaging.

Return procedure for ZXMC4559DN8TC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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