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Diodes Incorporated ZXMC4A16DN8TA
- Part No.:
- ZXMC4A16DN8TA
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
ZXMC4A16DN8TA.pdf
- Description:
- MOSFET N/P-CH 40V 5.2A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:9,019
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Product details
Overview
ZXMC4A16DN8TA from Zetex Semiconductors is a complementary dual-channel enhancement-mode MOSFET pair in a single SOIC-8 package, integrating one N-channel (40 V, 5.2 A, RDS(on) = 50 mΩ @ VGS = 10 V) and one P-channel (–40 V, –4.7 A, RDS(on) = 60 mΩ @ VGS = –10 V) device for half-bridge or H-bridge power stage implementation in low-voltage DC motor drives and LCD backlight inverters.
For engineers reviewing the ZXMC4A16DN8TA datasheet, ZXMC4A16DN8TA pinout, ZXMC4A16DN8TA application, or ZXMC4A16DN8TA equivalent, key selection criteria include verified complementary channel matching, SOIC-8 thermal performance (RJA = 60 °C/W with 25 mm × 25 mm copper), fast switching (td(off) ≤ 33 ns), low gate charge (Qg = 15–26 nC), and body diode recovery (trr = 20–27 ns).
Technical Context
This device implements a trench-gate MOSFET architecture enabling simultaneous low conduction loss and high-speed switching-critical for synchronous rectification and bidirectional current control in compact 5–24 V power stages. Its matched N/P threshold voltages (VGS(th) = ±1.0 V) and symmetrical dynamic parameters support balanced dead-time management.
The SOIC-8 package integrates two die on a shared leadframe with thermally optimized layout: junction-to-ambient resistance is 60 °C/W under standard PCB conditions (25 mm × 25 mm, 1 oz Cu), and the internal source-drain diodes exhibit low forward voltage (VSD = 0.8–0.95 V) and controlled reverse recovery (Qrr = 16–25 nC).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (N/P) | 40 V / –40 V - supports 24 V rail operation with 67 % safety margin against transients |
| RDS(on) @ VGS = 10 V | 50 mΩ / 60 mΩ - enables ≤1.3 W conduction loss at 5.2 A continuous drain current |
| Qg | 15–26 nC - allows efficient 1–2 MHz PWM drive with <100 ns total switching time |
| trr | 20–27 ns - minimizes shoot-through risk and EMI during commutation |
| PD @ TA = 25°C | 2.1 W - delivers 4.7 A P-channel + 5.2 A N-channel output in space-constrained SOIC footprint |
| VGS(th) | ±1.0 V - ensures reliable turn-on with 3.3 V logic-level gate drivers |
Pinout & Package
Package: SOIC-8 (3.9 × 4.9 × 1.5 mm), surface-mount, single-row, 1.27 mm pitch. Pin 1 marked by notch or dot; exposed pad not present.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | N-channel gate | Controls N-MOSFET; requires 0–10 V swing relative to Source 2 |
| 2 (S1) | N-channel source | Common source node for N-channel; connects to ground or low-side return path |
| 3 (D1) | N-channel drain | Connects to load high-side or half-bridge output node |
| 4 (D2) | P-channel drain | Shared drain terminal with D1 - forms common output node for complementary pair |
| 5 (S2) | P-channel source | Connects to positive rail (e.g., 12–24 V); defines high-side reference |
| 6 (G2) | P-channel gate | Controls P-MOSFET; driven negative relative to S2 (e.g., 0 V to –10 V) |
| 7, 8 | Internally connected drains | Electrically tied to pins 3 and 4 - no external connection required beyond D1/D2 |
Key Features
| Feature | Design Value |
|---|---|
| Complementary N+P integration | Single SOIC-8 replaces discrete half-bridge, reducing PCB area by >40 % and parasitic inductance |
| Trench MOSFET structure | Enables RDS(on) × Qg figure-of-merit of 0.75–1.56 Ω·nC - optimized for 500 kHz–2 MHz switching |
| Low VGS(th) symmetry | ±1.0 V thresholds allow matched turn-on timing with single-supply gate drivers and minimal dead-time overhead |
| Controlled body diode recovery | Qrr = 16–25 nC and trr = 20–27 ns reduce voltage overshoot and snubber losses in inductive loads |
Applications
| DC Motor Control | LCD Backlight Inverter |
|---|---|
|
Use Scenario: Bidirectional 12 V brushed DC motor drive in portable medical pumps and robotic actuators. IC Role / Device Role / Timing Role: Half-bridge power switch controlling direction and PWM speed via complementary N/P gate timing. Use Value: Low RDS(on) limits I²R loss to <0.7 W per FET at 4 A, enabling fanless enclosure design. |
Use Scenario: High-frequency resonant inverter driving CCFL or LED strings in industrial panel displays. IC Role / Device Role / Timing Role: Synchronous switching element in push-pull topology operating at 500 kHz–1.2 MHz. Use Value: Fast td(off)/tf (≤33/18 ns) and low Coss (92/180 pF) minimize switching loss below 0.3 W per cycle. |
| USB-Powered Power Tool Driver | Industrial Solenoid Sequencer |
|
Use Scenario: Compact 5 V–20 V cordless tool driver with integrated battery protection and torque control. IC Role / Device Role / Timing Role: Low-side N-MOSFET and high-side P-MOSFET in H-bridge configuration for reversible actuation. Use Value: Logic-level VGS(th) allows direct interface with MCU GPIOs, eliminating level-shifter components. |
Use Scenario: 24 V solenoid bank sequencer in factory automation PLC I/O modules. IC Role / Device Role / Timing Role: Dual-channel load switch enabling independent enable/disable of up to four solenoids per IC. Use Value: Matched thermal resistance (RJA = 60 °C/W) ensures stable 4.7 A sourcing without derating at 70 °C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si4532DY | Higher RDS(on) (N: 65 mΩ, P: 110 mΩ), larger Qg (22–34 nC), SO-8 package | Lower efficiency at >3 A; suited for cost-sensitive, lower-frequency (<300 kHz) designs | Select when BOM cost priority outweighs thermal density and switching loss |
| DMC2038LSD | Asymmetric geometry: N-channel rated 6.5 A, P-channel only 3.5 A; RDS(on) mismatch (42 mΩ / 95 mΩ) | Unbalanced current capability limits use to unidirectional or asymmetrical load topologies | Prefer only where P-channel current demand is ≤3.5 A and layout allows separate thermal paths |
Compared with Si4532DY and DMC2038LSD, ZXMC4A16DN8TA provides superior current symmetry (5.2 A / –4.7 A), lowest RDS(on) × Qg product, and tighter VGS(th) matching-making it optimal for thermally constrained, high-efficiency half-bridge designs above 400 kHz.
Availability
ZXMC4A16DN8TA is available at Aetrix Electronics and suitable for DC motor control, LCD backlight inverters, USB-powered power tool drivers, and industrial solenoid sequencers requiring stable component supply across extended production lifecycles.
Supply support for ZXMC4A16DN8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Zetex Semiconductors plc (now part of Diodes Incorporated) specialized in high-performance analog and power semiconductors, with core expertise in trench MOSFETs and precision bipolar products.
ZXMC4A16DN8TA belongs to Zetex's complementary MOSFET family engineered for space-efficient, high-efficiency DC-DC and motor control power stages in portable and industrial equipment.
FAQ
Is ZXMC4A16DN8TA pin-compatible with standard SOIC-8 footprints?
Yes. It uses JEDEC MS-012 SOIC-8 outline with 1.27 mm pitch, 3.9 mm body width, and 4.9 mm length. Pin 1 location is confirmed by notch marking; thermal pad is absent. Standard reflow profiles for SOIC-8 apply without modification.
Can the N- and P-channel devices be operated independently?
Yes. The N-channel (pins 1–3) and P-channel (pins 5–6) share only the drain terminals (pins 3/4), allowing independent gate control and separate source connections. This enables asymmetric drive schemes and isolated biasing where needed.
What is the maximum safe continuous current at 70°C ambient?
Per datasheet: N-channel ID = 4.1 A and P-channel ID = –3.8 A at TA = 70°C with VGS = 10 V (N) or –10 V (P), using the 2.1 W PD rating and 17 mW/°C derating factor. Exceeding these requires forced airflow or PCB copper enhancement.
Does ZXMC4A16DN8TA include integrated ESD protection?
No. The device has no on-chip ESD protection diodes. External TVS or RC snubbers are recommended on gate lines, especially in motor drive environments with inductive kickback exceeding ±20 V.
ZXMC4A16DN8TA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel Complementary
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 40V
- Current - Continuous Drain (Id) @ 25°C:
- 5.2A (Ta), 4.7A (Ta)
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 4.5A, 10V, 60mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250mA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 770pF @ 40V, 1000pF @ 20V
- Power - Max:
- 2.1W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
ZXMC4A16DN8TA FAQ
1.How can I place an order for ZXMC4A16DN8TA through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXMC4A16DN8TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXMC4A16DN8TA reliable?
The price and inventory of ZXMC4A16DN8TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMC4A16DN8TA is usually 5 days.
3.What payment methods are accepted for ZXMC4A16DN8TA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMC4A16DN8TA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZXMC4A16DN8TA?
ZXMC4A16DN8TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXMC4A16DN8TA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXMC4A16DN8TA?
For technical support, including ZXMC4A16DN8TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMC4A16DN8TA requirements.
6.How does Aetrix verify that ZXMC4A16DN8TA is sourced from the original manufacturer or authorized distributors?
All ZXMC4A16DN8TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMC4A16DN8TA meets industry standards.
7.What is the process for return or replacement of ZXMC4A16DN8TA?
All ZXMC4A16DN8TA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMC4A16DN8TA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXMC4A16DN8TA part is unused and in its original packaging.
Return procedure for ZXMC4A16DN8TA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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