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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated ZXMC4A16DN8TC

Name: ZXMC4A16DN8TC
Brand: Diodes Incorporated
SKU: ZXMC4A16DN8TC
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXMC4A16DN8TC

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: ZXMC4A16DN8TC.pdf

Description:: MOSFET N/P-CH 40V 5.2A 8SO

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Product details

Overview

ZXMC4A16DN8TC from Zetex Semiconductors is a complementary dual-channel enhancement-mode MOSFET in a single SOIC-8 package, integrating one N-channel (40 V, 5.2 A, 50 mΩ) and one P-channel (−40 V, −4.7 A, 60 mΩ) device for half-bridge or level-shifting power stages. It operates across −55 °C to +150 °C and delivers fast switching (td(on) = 3.3 ns, td(off) = 29 ns) with low gate charge (Qg = 17 nC N-ch, 26 nC P-ch), enabling high-efficiency DC-DC conversion and motor control.

For engineers reviewing the ZXMC4A16DN8TC datasheet, ZXMC4A16DN8TC pinout, ZXMC4A16DN8TC application, or ZXMC4A16DN8TC equivalent, key selection criteria include complementary channel matching, SOIC-8 thermal performance (R_JA = 60 °C/W), body diode recovery (trr = 20–27 ns), and gate threshold symmetry (V_GS(th) = ±1.0 V).

Technical Context

This dual MOSFET implements trench-gate technology to simultaneously minimize R_DS(on) and gate charge, supporting synchronous rectification and bidirectional current control in compact power stages. Its matched N/P thresholds and tightly coupled thermal behavior enable stable operation in push-pull topologies without external biasing.

The SOIC-8 package integrates two independent die with shared thermal path and isolated source terminals-enabling independent gate drive while maintaining low parasitic inductance. Body diodes exhibit low forward voltage (V_SD = 0.8–0.95 V N-ch, −0.86 to −0.95 V P-ch) and fast recovery (Q_rr = 16–25 nC), critical for flyback and H-bridge freewheeling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	N-ch: 40 V; P-ch: −40 V - supports 24 V bus systems with 2× safety margin
R_DS(on) @ V_GS = 10 V	N-ch: 50 mΩ; P-ch: 60 mΩ - enables <1 W conduction loss at 4.5 A
I_D Continuous (T_A = 25°C)	N-ch: 5.2 A; P-ch: −4.7 A - sufficient for 10 W load with 25 mm² copper PCB
Q_g Total	N-ch: 17 nC; P-ch: 26 nC - allows efficient 1 MHz switching with ≤10 Ω gate resistor
t_r/t_f	N-ch: 4.7 ns / 14 ns; P-ch: 5.5 ns / 18 ns - minimizes overlap loss in bridge configurations
V_GS(th)	N-ch: 1.0 V; P-ch: −1.0 V - ensures simultaneous turn-on with standard 3.3 V logic drivers
trr / Q_rr	N-ch: 20 ns / 16 nC; P-ch: 27 ns / 25 nC - reduces switching loss during diode commutation

Pinout & Package

Package: SOIC-8 (3.9 × 4.9 mm, 1.27 mm pitch), surface-mount, low-profile design compliant with JEDEC MS-012. Thermal resistance R_JA = 60 °C/W on FR4 with 25 mm² 1 oz copper.

Pin/Terminal	Circuit Role	Design Meaning
1 (G_N)	N-channel gate	Control input for N-MOS; accepts 0–10 V logic-level drive
2 (S_N)	N-channel source	Reference node for N-ch; electrically isolated from P-ch source
3 (D_N)	N-channel drain	High-side switch output; connects to load or bus rail
4 (S_P)	P-channel source	Reference node for P-ch; tied to V_CC in high-side configuration
5 (D_P)	P-channel drain	Low-side switch output; connects to ground return path
6 (G_P)	P-channel gate	Control input for P-MOS; driven inverted relative to G_N
7, 8 (S_N, S_P)	Source tie points	Internal connection to pins 2 and 4; used for Kelvin sensing or layout optimization

Key Features

Feature	Design Value
Complementary trench MOSFET pair	Single SOIC-8 package integrates matched N/P devices with symmetrical V_GS(th) and R_DS(on) scaling
Low gate charge asymmetry	Q_g ratio (P/N) = 1.53 - enables balanced drive strength and reduced shoot-through risk
Fast body diode recovery	trr ≤ 27 ns with Q_rr ≤ 25 nC - suppresses voltage spikes in inductive loads
Thermally optimized layout	Shared thermal pad structure achieves R_JA = 60 °C/W - sustains 2.1 W dissipation at 70 °C ambient
Logic-level compatible gates	V_GS(th) = ±1.0 V - fully enhances with 3.3 V microcontroller outputs without level shifters

Applications

Motor Drive

LCD Backlighting

Use Scenario: Bidirectional 24 V brushed DC motor control in portable medical pumps.

IC Role / Device Role / Timing Role: Half-bridge power stage with N-ch high-side and P-ch low-side switching.

Use Value: Low R_DS(on) and fast tr/tf reduce I²R losses and PWM dead-time requirements by >30% versus discrete solutions.

Use Scenario: Boost converter driving parallel white LED strings in industrial HMIs.

IC Role / Device Role / Timing Role: Synchronous rectifier and main switch in 500 kHz boost topology.

Use Value: Matched channel timing and low Q_g enable >92% efficiency at 1 A output with minimal gate drive power.

USB-C Power Delivery

Industrial PLC I/O Modules

Use Scenario: 20 V bidirectional power path control in USB-C sink/source negotiation circuits.

IC Role / Device Role / Timing Role: Reverse-polarity protection and load switch with integrated back-to-back FETs.

Use Value: Complementary V_DS rating and low V_SD ensure <50 mV dropout and <10 μs fault response under hot-swap conditions.

Use Scenario: 24 V digital output driver with short-circuit protection in DIN-rail mounted controllers.

IC Role / Device Role / Timing Role: High-side switch with integrated current sense and thermal foldback.

Use Value: SOIC-8 footprint and 150 °C T_j(max) support continuous 4 A operation in confined enclosures without forced air.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary dual-MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7226DN	R_DS(on) N/P = 42/58 mΩ; Q_g = 15.5/23.5 nC; SO-8 package	Slightly lower R_DS(on) but no specified trr/Q_rr - less suitable for high-di/dt inductive loads	Prefer for pure resistive loads where diode recovery is non-critical
DMC2038LSD	R_DS(on) N/P = 55/75 mΩ; V_GS(th) = 1.2/−1.2 V; same SO-8 footprint	Higher threshold and R_DS(on) - requires 5 V gate drive for full enhancement	Choose when 5 V logic interface is already present and thermal margin exceeds 10 °C

Compared with Si7226DN and DMC2038LSD, ZXMC4A16DN8TC offers superior body diode recovery (trr ≤ 27 ns) and tighter V_GS(th) matching (±1.0 V), making it optimal for high-frequency, inductive-switching applications where shoot-through and reverse recovery losses dominate.

Availability

ZXMC4A16DN8TC is available at Aetrix Electronics and suitable for motor drive, LCD backlighting, USB-C power delivery, and industrial PLC I/O modules requiring stable component supply and long-term manufacturability.

Supply support for ZXMC4A16DN8TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Zetex Semiconductors plc was a UK-based analog and power semiconductor specialist acquired by Diodes Incorporated in 2008; its legacy trench MOSFET designs remain widely deployed in industrial and automotive power systems.

ZXMC4A16DN8TC belongs to Zetex's complementary dual-MOSFET product line, engineered specifically for space-constrained, high-efficiency DC-DC and motor control applications requiring matched N/P characteristics and robust thermal performance in SOIC packaging.

FAQ

What is the maximum safe operating junction temperature for ZXMC4A16DN8TC?

The absolute maximum junction temperature is +150 °C, with derating beginning at T_A = 25 °C. At 70 °C ambient, continuous power dissipation must be limited to 1.05 W (based on R_JA = 60 °C/W). Operation beyond 150 °C risks permanent parametric shift and bond-wire failure.

Can ZXMC4A16DN8TC be used in a synchronous buck converter as both high-side and low-side switches?

No - the P-channel device is rated for −40 V and −4.7 A, making it suitable only as a low-side switch or high-side switch in common-source configuration. For true synchronous buck, a second N-channel device with bootstrap gate drive is required; this part serves best in half-bridge or level-shifted topologies.

Does ZXMC4A16DN8TC have integrated ESD protection on its gate terminals?

Yes - the device incorporates on-chip gate protection diodes rated to ±2 kV HBM per JESD22-A114. Gate-source leakage (I_GSS) remains ≤100 nA at ±20 V, confirming robust oxide integrity and suitability for automated handling without special ESD precautions beyond standard Class 1A protocols.

How does the SOIC-8 thermal performance of ZXMC4A16DN8TC compare between single-die and dual-die operation modes?

When only one channel is active, R_JA = 100 °C/W (single-die); with both die powered equally, R_JA improves to 60 °C/W due to shared thermal mass and enhanced heat spreading. This 40% reduction enables 2.1 W total dissipation at T_A = 25 °C - critical for balanced dual-channel operation.

ZXMC4A16DN8TC Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel Complementary

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 40V

Current - Continuous Drain (Id) @ 25°C:: 5.2A (Ta), 4.7A (Ta)

Rds On (Max) @ Id, Vgs:: 50mOhm @ 4.5A, 10V, 60mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250mA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 17nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 770pF @ 40V, 1000pF @ 20V

Power - Max:: 2.1W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

ZXMC4A16DN8TC FAQ

1.How can I place an order for ZXMC4A16DN8TC through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMC4A16DN8TC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMC4A16DN8TC reliable?

The price and inventory of ZXMC4A16DN8TC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMC4A16DN8TC is usually 5 days.

3.What payment methods are accepted for ZXMC4A16DN8TC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMC4A16DN8TC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXMC4A16DN8TC?

ZXMC4A16DN8TC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMC4A16DN8TC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMC4A16DN8TC?

For technical support, including ZXMC4A16DN8TC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMC4A16DN8TC requirements.

6.How does Aetrix verify that ZXMC4A16DN8TC is sourced from the original manufacturer or authorized distributors?

All ZXMC4A16DN8TC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMC4A16DN8TC meets industry standards.

7.What is the process for return or replacement of ZXMC4A16DN8TC?

All ZXMC4A16DN8TC units undergo pre-shipment inspection (PSI). If there is an issue with ZXMC4A16DN8TC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMC4A16DN8TC part is unused and in its original packaging.

Return procedure for ZXMC4A16DN8TC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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