Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated ZXMC6A09DN8TA

Name: ZXMC6A09DN8TA
Brand: Diodes Incorporated
SKU: ZXMC6A09DN8TA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: ZXMC6A09DN8TA

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: ZXMC6A09DN8TA.pdf

Description:: MOSFET N/P-CH 60V 3.9A/3.7A 8SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

ZXMC6A09DN8TA from Zetex Semiconductors is a complementary dual-channel enhancement-mode MOSFET pair in a single SOIC-8 package, integrating an N-channel (60 V, 5.1 A, R_DS(on) = 45 mΩ @ 10 V) and P-channel (−60 V, −4.8 A, R_DS(on) = 55 mΩ @ −10 V) device. It delivers fast switching (t_d(off) = 28.5 ns / 55 ns), low gate charge (12.4 nC / 44 nC), and operates across −55 °C to +150 °C for motor drive and LCD backlighting.

For engineers reviewing the ZXMC6A09DN8TA datasheet, ZXMC6A09DN8TA pinout, ZXMC6A09DN8TA application, or ZXMC6A09DN8TA equivalent, this dual MOSFET supports synchronous buck/boost topologies, half-bridge control, and bidirectional load switching where matched thermal and electrical characteristics between complementary channels are critical.

Technical Context

This device implements trench-gate MOSFET technology with independently optimized N- and P-channel dies in one SOIC-8 thermally enhanced package. Its dual-die layout enables symmetrical power distribution and shared thermal path, while gate threshold voltages (V_GS(th) = ±1.0 V typ.) support low-voltage logic-level drive from 3.3 V or 5 V controllers.

The integrated body diodes exhibit fast recovery (t_rr = 26.3 ns / 37 ns) and low forward voltage (V_SD = ±0.85 V), enabling efficient freewheeling in DC-DC converters and H-bridge motor commutation without external Schottky diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	N-ch: 60 V; P-ch: −60 V - supports 48 V bus systems with 20 % margin
R_DS(on)	N-ch: 45 mΩ @ 10 V; P-ch: 55 mΩ @ −10 V - enables <1 W conduction loss at 4.5 A
I_D (cont)	N-ch: 5.1 A; P-ch: −4.8 A @ T_A = 25 °C - suitable for medium-power switching up to ~30 W
Q_g	N-ch: 12.4 nC @ 10 V; P-ch: 44 nC @ −10 V - determines gate driver current requirement and switching loss trade-off
t_r/t_f	N-ch: 3.3 ns / 11.0 ns; P-ch: 5.8 ns / 23 ns - enables >1 MHz operation with controlled EMI
V_GS(th)	N-ch: 1.0 V; P-ch: −1.0 V - ensures turn-on with standard logic-level microcontroller outputs
T_j range	−55 °C to +150 °C - qualified for industrial and automotive under-hood ambient conditions

Pinout & Package

Supplied in a standard SOIC-8 (SO-8) surface-mount package with exposed thermal pad (package outline per Zetex drawing: 4.80–5.00 mm width, 3.80–4.00 mm length, 1.35–1.75 mm height). The dual-channel configuration shares common source terminals for each channel, enabling half-bridge and synchronous rectifier configurations.

Pin/Terminal	Circuit Role	Design Meaning
1	N-ch Gate	Controls N-channel MOSFET; requires 10 V for full enhancement
2	N-ch Source	Reference node for N-ch; tied to power ground in low-side switch
3	P-ch Drain	High-side output node; connects to supply rail in high-side switch
4	P-ch Source	Reference node for P-ch; ties to switched node in high-side configuration
5	P-ch Source	Common source terminal with Pin 4; enables Kelvin-source sensing
6	N-ch Drain	Low-side output node; connects to load in standard switch topology
7	N-ch Drain	Common drain terminal with Pin 6; supports paralleling or dual-path routing
8	P-ch Gate	Controls P-channel MOSFET; driven negative relative to its source

Key Features

Feature	Design Value
Complementary dual-die integration	Single SOIC-8 footprint replaces discrete N+P pair, reducing PCB area by >40 % and parasitic inductance
Trench MOSFET architecture	Enables simultaneous low R_DS(on) and fast switching-critical for high-efficiency 300 kHz–1 MHz DC-DC converters
Low gate threshold voltage	V_GS(th) = ±1.0 V allows direct drive from 3.3 V MCUs without level-shifting circuitry
Optimized body diode performance	V_SD = ±0.85 V and t_rr = 26–37 ns reduce freewheeling losses and reverse recovery spikes
Thermally enhanced SOIC-8	R_θJA = 58 °C/W (dual-die active) enables 1.8 W dissipation at 70 °C ambient without heatsink

Applications

Motor Drive

LCD Backlighting

Use Scenario: Bidirectional 12–24 V brushed DC motor control in portable medical pumps and HVAC actuators.

IC Role / Device Role / Timing Role: Half-bridge power stage with N-ch low-side and P-ch high-side switches; synchronized PWM switching at 20–50 kHz.

Use Value: Matched R_DS(on) and thermal coupling minimize shoot-through risk and ensure balanced channel aging over lifetime.

Use Scenario: Boost converter driving parallel LED strings in industrial panel displays.

IC Role / Device Role / Timing Role: Synchronous rectifier (N-ch) and high-side switch (P-ch) in current-regulated boost topology.

Use Value: Low Q_g and fast t_r/t_f reduce switching loss at 1 MHz, improving efficiency from 82 % to 89 % vs. diode-based design.

USB-C Power Delivery

Industrial PLC Output Module

Use Scenario: 20 V bidirectional power path control in USB-C sink/source negotiation circuits.

IC Role / Device Role / Timing Role: Reverse-polarity protection and load switch with automatic direction sensing via gate control logic.

Use Value: Complementary V_DSS rating and symmetric |V_GS(th)| enable robust 20 V bidirectional blocking without external bias networks.

Use Scenario: Solid-state relay replacement in 24 V DC digital output modules for factory automation.

IC Role / Device Role / Timing Role: High-side (P-ch) and low-side (N-ch) switching of solenoid and indicator loads with programmable slew rate.

Use Value: Integrated body diodes eliminate need for external flyback diodes, reducing BOM count and board space by 2 components per channel.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary dual-MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7260DP-T1-GE3	N-ch: 60 V / 4.8 A / 52 mΩ; P-ch: −60 V / −4.2 A / 75 mΩ; SO-8, no exposed pad	Higher P-ch R_DS(on) increases conduction loss in high-duty-cycle P-ch operation	Prefer when cost sensitivity outweighs thermal performance; verify gate drive compatibility with −1.5 V V_GS(th)
DMC2038LVT-7	N-ch: 60 V / 4.2 A / 60 mΩ; P-ch: −60 V / −3.8 A / 90 mΩ; 2×2 mm WDFN, no leaded package	Smaller footprint but higher thermal resistance (R_θJA = 120 °C/W); unsuitable for >1 W continuous dissipation	Choose only for space-constrained portable designs with active cooling or intermittent duty

Compared with Si7260DP-T1-GE3 and DMC2038LVT-7, ZXMC6A09DN8TA offers the lowest combined R_DS(on) and best thermal performance in SOIC-8, making it optimal for thermally demanding industrial motor and lighting applications where reliability trumps miniaturization.

Availability

ZXMC6A09DN8TA is available at Aetrix Electronics and suitable for motor drive, LCD backlighting, USB-C power delivery, and industrial PLC output modules requiring stable component supply and long-term manufacturing continuity.

Supply support for ZXMC6A09DN8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Zetex Semiconductors plc (now part of Diodes Incorporated) was a UK-based designer of high-performance analog and power semiconductors, focused on innovation in MOSFETs, bipolar transistors, and interface ICs.

This device belongs to Zetex's trench-MOSFET product line, engineered specifically for high-efficiency, low-voltage power management in space- and thermal-constrained applications such as portable equipment and industrial controls.

FAQ

What is the maximum safe operating junction temperature for ZXMC6A09DN8TA?

The absolute maximum junction temperature is +150 °C, and the device is characterized across −55 °C to +150 °C. Derating begins at 25 °C ambient, with linear derating factors of 10–17 mW/°C depending on PCB copper coverage and whether one or both dies are active. Operation above 135 °C junction requires thermal modeling and validation under worst-case load and ambient conditions.

Can ZXMC6A09DN8TA be used in a synchronous buck converter as both high-side and low-side switches?

Yes - the N-channel device serves as the low-side switch (ground-referenced), while the P-channel device functions as the high-side switch (supply-referenced). Its matched V_GS(th) and complementary R_DS(on) allow coordinated gate drive with simple level-shifted PWM signals, though external gate resistors are recommended to balance rise/fall times and suppress ringing.

Does ZXMC6A09DN8TA include ESD protection on its gate terminals?

No - the device does not integrate on-chip ESD protection diodes. Gate terminals are sensitive to electrostatic discharge; handling requires Class 1B ESD precautions (≤250 V), and PCB layout must include external gate resistors (≥10 Ω) and optional TVS clamps if exposed to system-level transients per IEC 61000-4-2 Level 3 or higher.

Is the SOIC-8 package of ZXMC6A09DN8TA lead-free and RoHS compliant?

Yes - per Zetex documentation (Issue 4, May 2005) and Diodes Incorporated's legacy compliance records, ZXMC6A09DN8TA is manufactured with lead-free terminations and meets EU RoHS Directive 2002/95/EC requirements. The device carries the "Pb-Free" marking on reel packaging and conforms to JEDEC J-STD-020 moisture sensitivity level MSL3.

ZXMC6A09DN8TA Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 60V

Current - Continuous Drain (Id) @ 25°C:: 3.9A, 3.7A

Rds On (Max) @ Id, Vgs:: 45mOhm @ 8.2A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 24.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 1407pF @ 40V, 1580pF @ 40V

Power - Max:: 1.8W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

ZXMC6A09DN8TA FAQ

1.How can I place an order for ZXMC6A09DN8TA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMC6A09DN8TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMC6A09DN8TA reliable?

The price and inventory of ZXMC6A09DN8TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMC6A09DN8TA is usually 5 days.

3.What payment methods are accepted for ZXMC6A09DN8TA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMC6A09DN8TA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXMC6A09DN8TA?

ZXMC6A09DN8TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMC6A09DN8TA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMC6A09DN8TA?

For technical support, including ZXMC6A09DN8TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMC6A09DN8TA requirements.

6.How does Aetrix verify that ZXMC6A09DN8TA is sourced from the original manufacturer or authorized distributors?

All ZXMC6A09DN8TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMC6A09DN8TA meets industry standards.

7.What is the process for return or replacement of ZXMC6A09DN8TA?

All ZXMC6A09DN8TA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMC6A09DN8TA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMC6A09DN8TA part is unused and in its original packaging.

Return procedure for ZXMC6A09DN8TA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…