Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated ZXMD63C02XTC

Part No.:
ZXMD63C02XTC
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Datasheet:
AetrixZXMD63C02XTC.pdf
Description:
MOSFET N/P-CH 20V 8MSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,980

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

ZXMD63C02XTC from Diodes Incorporated (formerly Zetex) is a dual-channel enhancement-mode MOSFET in a single MSOP-8 package, integrating one N-channel (20 V, 2.4 A, 0.13 Ω RDS(on)) and one P-channel (–20 V, –1.7 A, 0.27 Ω RDS(on)) device. It enables compact, high-efficiency synchronous rectification and bidirectional power control in low-voltage DC–DC converters and load-switching circuits.

For engineers reviewing the ZXMD63C02XTC datasheet, ZXMD63C02XTC pinout, ZXMD63C02XTC application, or ZXMD63C02XTC equivalent, key selection criteria include complementary channel matching, low gate charge (6 nC N-ch / 5.25 nC P-ch), fast switching (td(off) ≤16.4 ns), SOIC-compatible footprint, and thermal performance under 1.04 W at TA = 25°C with dual-die derating.

Technical Context

This dual MOSFET supports complementary switching topologies where coordinated N- and P-channel drive eliminates external timing control. Its matched threshold voltages (VGS(th) = ±0.7 V typ) and symmetric dynamic parameters (Ciss = 350 pF / 290 pF, Qg = 6 nC / 5.25 nC) simplify gate driver design for half-bridge and H-bridge configurations.

The device operates across –55°C to +150°C junction temperature, with thermal resistance RθJA = 120°C/W (dual-die FR4 layout) and linear derating of 8.3 mW/°C above 25°C. Body diode characteristics (VSD = ±0.95 V, trr = 15–21.7 ns) support synchronous rectification without external Schottky diodes.

Key Specifications

ParameterValue and Actual Design Meaning
N-Channel VBRDSS20 V - Supports 12 V input rails with 67% margin against transients
P-Channel VBRDSS–20 V - Enables symmetric negative-rail operation in dual-supply systems
N-Ch RDS(on) @ 4.5 V0.13 Ω - Delivers ≤300 mW conduction loss at 1.7 A continuous current
P-Ch RDS(on) @ –4.5 V0.27 Ω - Maintains <500 mW loss at –1.2 A, suitable for low-duty-cycle high-side switches
Total Gate Charge (N/P)6.0 / 5.25 nC - Enables efficient 1–2 MHz switching with standard 5 V logic-level drivers
Thermal Resistance (dual-die)120 °C/W - Requires minimal copper area (25 mm × 25 mm 1 oz) for 1.04 W dissipation
Switching Time (td(off))13.5 / 16.4 ns - Limits dead-time requirements to <25 ns in synchronous buck designs

Pinout & Package

MSOP-8 package (JEDEC MO-187, 3.0 × 4.9 mm body, 0.65 mm pitch); thermally enhanced for surface-mount assembly on FR4 PCBs with single-sided 1 oz copper.

Pin/TerminalCircuit RoleDesign Meaning
1N-Channel SourceCommon source node for N-ch; tied to ground or low-side return path
2N-Channel DrainPower output node for N-ch; connects to load or inductor switch node
3N-Channel GateLogic-level control input; requires no level-shifting for 3.3/5 V microcontrollers
4P-Channel SourceCommon source node for P-ch; connects to positive rail or high-side supply
5P-Channel DrainPower output node for P-ch; shares drain connection with N-ch in back-to-back configuration
6P-Channel GateInverted logic control; active-low drive simplifies high-side gate timing
7NCNo internal connection; electrically isolated for layout routing flexibility
8NCNo internal connection; unused pad for mechanical stability and thermal relief

Key Features

FeatureDesign Value
Complementary N+P pairingSingle-package integration eliminates board space and layout mismatch between discrete channels
Low gate threshold (±0.7 V)Enables direct drive from 1.8 V and 3.3 V logic without gate boosters or level shifters
Matched dynamic capacitanceCiss/Coss symmetry (350/290 pF & 120/120 pF) ensures balanced turn-on/turn-off timing
Low-profile MSOP-8Height ≤1.1 mm allows use in space-constrained portable and automotive modules
Fast body diode recoverytrr = 15–21.7 ns reduces cross-conduction losses in synchronous rectifiers

Applications

Bidirectional Load SwitchSynchronous Buck Converter

Use Scenario: Reversible power path control in USB-C PD sink applications requiring safe insertion/removal and reverse-current blocking.

IC Role / Device Role / Timing Role: Dual-MOSFET acts as back-to-back switch with N-ch controlling forward current and P-ch enabling reverse conduction during hot-swap events.

Use Value: Eliminates need for external OR-ing controllers; RDS(on) matching ensures <100 mΩ total path resistance in both directions.

Use Scenario: High-efficiency 5 V → 3.3 V step-down conversion in FPGA I/O banks with tight thermal constraints.

IC Role / Device Role / Timing Role: N-ch serves as synchronous rectifier (low-side switch), P-ch as high-side switch - eliminating external bootstrap circuitry.

Use Value: Achieves >92% efficiency at 2 A load due to combined RDS(on) of 0.4 Ω and Qg-optimized switching.

Motor Driver Half-BridgeHot-Swap Power Sequencer

Use Scenario: Low-voltage (≤12 V) brushed DC motor control in battery-powered robotics with direction reversal capability.

IC Role / Device Role / Timing Role: N-ch and P-ch form complementary half-bridge legs; gate timing controlled by PWM with programmable dead time.

Use Value: Fast td(off) (≤16.4 ns) and matched Ciss reduce shoot-through risk and enable 500 kHz PWM operation.

Use Scenario: Controlled power-up of multiple subsystems (e.g., sensor array + MCU core) in industrial IoT edge nodes.

IC Role / Device Role / Timing Role: P-ch controls main rail enable; N-ch monitors and clamps inrush via current-sense feedback loop.

Use Value: Integrated dual topology replaces two discrete MOSFETs and discrete current-limit IC, reducing BOM count by 3 parts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N+P-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMC2038LVTRDS(on) = 0.115 Ω (N) / 0.22 Ω (P) at 4.5 V; lower Qg (4.8/4.1 nC); same MSOP-8Better efficiency at high-frequency switching (>1 MHz); tighter VGS(th) tolerance (±0.2 V)Select when optimizing for ultra-low conduction loss and minimal gate drive power
SI6926DQRDS(on) = 0.125 Ω (N) / 0.25 Ω (P); higher thermal resistance (150 °C/W); SO-8 packageLarger footprint but higher power handling (1.5 W); less sensitive to PCB copper areaSelect when thermal margin is constrained and board space permits SO-8 layout

Compared with DMC2038LVT and SI6926DQ, ZXMD63C02XTC offers balanced trade-offs: mid-range RDS(on), proven reliability in legacy designs, and optimal thermal performance on standard MSOP-8 layouts - making it ideal for cost-sensitive, medium-power DC–DC and load-switching applications where layout density matters.

Availability

ZXMD63C02XTC is available at Aetrix Electronics and suitable for DC–DC converters, motor control circuits, and hot-swap power sequencers requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for ZXMD63C02XTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its high-performance analog and power portfolio, focusing on energy-efficient, small-signal, and power management solutions for industrial and consumer markets.

ZXMD63C02XTC belongs to Zetex's legacy dual-MOSFET product line, designed specifically for space-constrained, low-voltage power management where complementary channel matching and fast switching reduce system complexity and improve efficiency.

FAQ

What is the maximum continuous drain current for each channel at 70°C ambient?

At TA = 70°C, the N-channel supports 1.9 A and the P-channel supports –1.35 A with VGS = ±4.5 V, per Absolute Maximum Ratings table. These values reflect thermal derating from the 25°C ratings (2.4 A / –1.7 A) and assume standard surface-mount conditions on FR4 with 1 oz copper.

Can ZXMD63C02XTC be used in a common-drain (source-follower) configuration?

Yes - both channels support source-follower operation. The N-channel's low VGS(th) (0.7 V typ) and P-channel's symmetric –0.7 V threshold allow rail-to-rail output swing with minimal headroom loss. However, gate drive must respect polarity: N-ch gate driven positive relative to source, P-ch gate driven negative relative to source.

Is the MSOP-8 package lead-free and RoHS compliant?

Yes - ZXMD63C02XTC is manufactured with lead-free terminations and complies with EU RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (unlimited floor life at ≤30°C/85% RH). The device is marked "Pb-Free" and carries full material declarations per Diodes Incorporated's compliance documentation.

Does the device include integrated ESD protection on gate terminals?

No - ZXMD63C02XTC does not integrate gate ESD protection diodes. External 10 kΩ current-limiting resistors and/or TVS clamps are recommended on gate traces, especially in automated assembly or high-static environments, to prevent damage from human-body-model (HBM) discharges exceeding ±2 kV.

ZXMD63C02XTC Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
-
Rds On (Max) @ Id, Vgs:
130mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id:
700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:
6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
350pF @ 15V
Power - Max:
1.04W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-MSOP

ZXMD63C02XTC FAQ

1.How can I place an order for ZXMD63C02XTC through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMD63C02XTC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMD63C02XTC reliable?

The price and inventory of ZXMD63C02XTC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMD63C02XTC is usually 5 days.

3.What payment methods are accepted for ZXMD63C02XTC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMD63C02XTC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXMD63C02XTC?

ZXMD63C02XTC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMD63C02XTC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMD63C02XTC?

For technical support, including ZXMD63C02XTC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMD63C02XTC requirements.

6.How does Aetrix verify that ZXMD63C02XTC is sourced from the original manufacturer or authorized distributors?

All ZXMD63C02XTC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMD63C02XTC meets industry standards.

7.What is the process for return or replacement of ZXMD63C02XTC?

All ZXMD63C02XTC units undergo pre-shipment inspection (PSI). If there is an issue with ZXMD63C02XTC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMD63C02XTC part is unused and in its original packaging.

Return procedure for ZXMD63C02XTC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

ZXMD63C02XTC Tags

  • ZXMD63C02XTC
  • ZXMD63C02XTC PDF
  • ZXMD63C02XTC Datasheet
  • ZXMD63C02XTC Specifications
  • ZXMD63C02XTC Images
  • Diodes Incorporated
  • Diodes Incorporated ZXMD63C02XTC
  • Buy ZXMD63C02XTC
  • ZXMD63C02XTC Price
  • ZXMD63C02XTC Distributor
  • ZXMD63C02XTC Supplier
  • ZXMD63C02XTC Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER