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Diodes Incorporated ZXMD63N03XTC
- Part No.:
- ZXMD63N03XTC
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
ZXMD63N03XTC.pdf
- Description:
- MOSFET 2N-CH 30V 2.3A 8MSOP
- Quantity:
- Payment:
- Shipping:
Inventory:7,963
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Product details
Overview
ZXMD63N03XTC from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in MSOP-8 package, rated for 30V VDS, 135mΩ RDS(on) at VGS = 10V, and 2.3A continuous drain current at TA = +25°C. It serves as a high-efficiency synchronous rectifier or load switch in compact DC-DC converters and motor control stages.
For engineers reviewing the ZXMD63N03XTC datasheet, ZXMD63N03XTC pinout, ZXMD63N03XTC application, or ZXMD63N03XTC equivalent, key selection criteria include its dual-die MSOP-8 layout, low 4.5V-threshold operation (VGS(th) = 1.0V min), fast switching (tr = 4.1ns), body diode forward voltage (VSD = 0.95V), and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This dual MOSFET integrates two independent N-channel silicon die in a single MSOP-8 thermally enhanced package, sharing common source terminals per channel. Its gate threshold (1.0–2.5V) enables direct logic-level drive from 3.3V/5V controllers, while low Ciss (290pF) and Qg (8nC) support high-frequency PWM operation up to 1MHz.
The device features an integrated body diode with trr = 16.9ns and Qrr = 9.5nC, enabling efficient synchronous rectification without external Schottky diodes. Thermal resistance RθJA is 100°C/W on 25mm × 25mm FR4 with 1oz copper, supporting 0.87W steady-state dissipation at ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 30V - supports 24V rail systems with 25% margin against transients |
| RDS(on) @ 10V | 135mΩ - delivers ≤315mW conduction loss at 1.7A DC load |
| RDS(on) @ 4.5V | 200mΩ - enables full enhancement from standard 3.3V GPIO or PWM controllers |
| VGS(th) | 1.0V min - ensures turn-on well below 1.8V logic thresholds |
| Qg | 8nC - reduces gate drive power and allows use of low-current drivers |
| tr/tf | 4.1ns / 4.4ns - minimizes switching losses in >500kHz SMPS designs |
| PD (TA=25°C) | 0.87W - defines maximum continuous power in standard PCB mount without heatsink |
Pinout & Package
MSOP-8 package with exposed drain paddle for thermal enhancement; 0.65mm pitch, 3.0mm × 4.9mm footprint, RoHS-compliant matte tin terminations.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input for first MOSFET; requires <20V absolute max |
| 2 (S1) | Source of Channel 1 | Common source node for Channel 1; tied to local ground or low-side return path |
| 3 (D1) | Drain of Channel 1 | High-side switching node; electrically connected to exposed paddle for thermal conduction |
| 4 (D2) | Drain of Channel 2 | Second high-side node; shares thermal pad with D1 but isolated electrically |
| 5 (S2) | Source of Channel 2 | Independent source for Channel 2; enables dual low-side or half-bridge configurations |
| 6 (G2) | Gate of Channel 2 | Separate gate input; allows asynchronous or complementary drive of second channel |
| 7, 8 (EP) | Exposed Drain Pad | Thermal and electrical connection to both drains; must be soldered to PCB copper pour |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel topology | Enables space-constrained half-bridge or dual-load-switch designs in one MSOP-8 footprint |
| AEC-Q101 qualified | Validated for automotive temperature range (−55°C to +150°C) and mechanical stress testing |
| Low 4.5V RDS(on) | 200mΩ ensures <680mW loss at 1.3A - critical for battery-powered motor drivers |
| Fast reverse recovery (trr) | 16.9ns body diode enables clean synchronous rectification without shoot-through risk |
| Green compound packaging | Halogen- and antimony-free molding compound (<900ppm Br+Cl, <1000ppm Sb) meets IEC 61249-2-21 |
Applications
| DC-DC Buck Converter | Automotive Body Control Module |
|---|---|
Use Scenario: 12V-to-3.3V point-of-load conversion in infotainment head units. IC Role / Device Role: Synchronous rectifier (low-side switch) paired with external high-side FET. Use Value: 200mΩ RDS(on) at 4.5V gate drive eliminates need for external level-shifting, reducing BOM count by one IC. | Use Scenario: Window lift and mirror adjustment motor drive with H-bridge reversal. IC Role / Device Role: Dual low-side switch controlling direction and braking via PWM. Use Value: Independent G1/S1 and G2/S2 terminals allow full four-quadrant control without external logic inversion. |
| USB-C Power Delivery Sink | Industrial PLC I/O Module |
Use Scenario: 5V/9V/15V programmable load switching for USB PD negotiation compliance. IC Role / Device Role: Dual independent load disconnect switches upstream of buck regulators. Use Value: 30V rating and 1.9A derated current at +70°C ensure safe operation across full PD voltage range with thermal margin. | Use Scenario: 24V digital output stage driving solenoids and indicator LEDs. IC Role / Device Role: High-side configured via external bootstrap or low-side configured with common ground reference. Use Value: AEC-Q101 qualification provides extended lifetime and ESD robustness (±20V VGS) in noisy factory environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN6016LFG-7 | Single-channel 30V N-FET in SOT-23-6; no dual configuration | Requires two devices for dual function; larger total footprint than MSOP-8 | Prefer when board area permits discrete placement and thermal isolation is prioritized |
| SI6926ADQ-T1-GE3 | Dual 30V N-FET in SO-8; RDS(on) = 28mΩ @ 10V (lower loss), but 5× larger footprint | Better thermal performance (RθJA = 62°C/W), unsuitable for ultra-compact layouts | Choose when >1.5A continuous current and lower conduction loss outweigh size constraints |
Compared with DMN6016LFG-7 and SI6926ADQ-T1-GE3, ZXMD63N03XTC uniquely balances dual functionality, 3.0mm × 4.9mm MSOP-8 size, and 4.5V logic compatibility - making it optimal for space-limited, 3.3V-controlled power stages where thermal density is managed via PCB copper.
Availability
ZXMD63N03XTC is available at Aetrix Electronics and suitable for DC-DC converters, automotive body control modules, and industrial PLC I/O modules requiring stable component supply and AEC-Q101 reliability assurance.
Supply support for ZXMD63N03XTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
ZXMD63N03XTC belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-density, high-efficiency power switching in automotive and industrial applications where small footprint and logic-level drive are mandatory.
FAQ
What is the maximum continuous drain current for each channel at +70°C ambient?
Each channel supports 1.8A continuous drain current at TA = +70°C with VGS = 4.5V, as specified in the Absolute Maximum Ratings table. This derating accounts for thermal resistance and junction temperature limits under typical FR4 PCB mounting conditions with moderate copper coverage.
Can ZXMD63N03XTC be used in a half-bridge configuration?
Yes - the dual independent channels support half-bridge topologies when Channel 1 operates as high-side (with bootstrap gate drive) and Channel 2 as low-side (ground-referenced). The separate gate and source pins enable proper timing control, though external gate resistors are recommended to manage dV/dt and prevent shoot-through.
Is the exposed pad electrically connected to the drains?
Yes - pins 3 (D1) and 4 (D2) are internally bonded to the exposed thermal pad (pins 7 and 8). The pad must be soldered to a PCB copper pour tied to the drain net for both thermal performance and electrical integrity; floating the pad violates the device's thermal specification and may cause premature failure.
Does this MOSFET require a gate resistor for stability?
Yes - a series gate resistor (typically 5–22Ω) is recommended to dampen ringing caused by gate-drain capacitance (Crss = 20pF) and PCB trace inductance. Without it, fast edges (tr = 4.1ns) can induce oscillation, increasing EMI and dynamic losses, especially in high-frequency (>300kHz) switching applications.
ZXMD63N03XTC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 2.3A
- Rds On (Max) @ Id, Vgs:
- 135mOhm @ 1.7A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 290pF @ 25V
- Power - Max:
- 1.04W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-MSOP
ZXMD63N03XTC FAQ
1.How can I place an order for ZXMD63N03XTC through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXMD63N03XTC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXMD63N03XTC reliable?
The price and inventory of ZXMD63N03XTC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMD63N03XTC is usually 5 days.
3.What payment methods are accepted for ZXMD63N03XTC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMD63N03XTC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZXMD63N03XTC?
ZXMD63N03XTC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXMD63N03XTC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXMD63N03XTC?
For technical support, including ZXMD63N03XTC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMD63N03XTC requirements.
6.How does Aetrix verify that ZXMD63N03XTC is sourced from the original manufacturer or authorized distributors?
All ZXMD63N03XTC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMD63N03XTC meets industry standards.
7.What is the process for return or replacement of ZXMD63N03XTC?
All ZXMD63N03XTC units undergo pre-shipment inspection (PSI). If there is an issue with ZXMD63N03XTC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXMD63N03XTC part is unused and in its original packaging.
Return procedure for ZXMD63N03XTC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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