Diodes Incorporated ZXMD63P03XTC
- Part No.:
- ZXMD63P03XTC
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
ZXMD63P03XTC.pdf
- Description:
- MOSFET 2P-CH 30V 8MSOP
- Quantity:
- Payment:

- Shipping:

Inventory:9,967
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Product details
Overview
ZXMD63P03XTC from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in MSOP-8 package, rated for -30V V(BR)DSS, 0.185Ω RDS(ON) at VGS = -4.5V, and -2.0A continuous drain current. It serves as a compact, low-profile power switch for bidirectional load control in space-constrained DC-DC converters and battery-powered systems.
For engineers reviewing the ZXMD63P03XTC datasheet, ZXMD63P03XTC pinout, ZXMD63P03XTC application, or ZXMD63P03XTC equivalent, key selection criteria include verified dual P-channel topology, guaranteed RDS(ON) ≤ 0.185Ω at -4.5V gate drive, thermal resistance θJA = 90°C/W (MSOP-8), and SOIC-compatible footprint with enhanced thermal performance.
Technical Context
This device integrates two identical P-channel MOSFETs in a single MSOP-8 package with shared source terminals configured for high-side switching or synchronous rectification. Each channel operates independently with threshold voltage VGS(th) = -1.0V to -2.5V and exhibits fast turn-on/turn-off times due to low gate charge Qg = 5.5nC (typ).
The structure enables efficient operation in low-voltage power management where gate drive is limited to 3.3V or 5V logic levels, and its low RDS(ON) minimizes conduction loss in portable electronics requiring <3W per channel dissipation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | -30V - Maximum drain-source blocking voltage before avalanche breakdown; defines safe operating range in 12V–24V rail applications. |
| RDS(ON) | 0.185Ω @ VGS = -4.5V - Confirmed on-resistance enabling ≤0.74W conduction loss at -2.0A; critical for thermal budget in sealed enclosures. |
| ID (continuous) | -2.0A - Absolute maximum DC drain current per channel at TA = 25°C; derates to -1.6A at 70°C ambient. |
| Qg | 5.5nC (typ) - Total gate charge determining drive strength requirement; supports PWM switching up to 1MHz with standard logic drivers. |
| θJA | 90°C/W - Junction-to-ambient thermal resistance in standard MSOP-8 layout; requires minimal copper area for <50°C rise at full load. |
| VGS(th) | -1.0V to -2.5V - Gate threshold range ensuring reliable turn-on with 3.3V logic; avoids partial enhancement in low-noise bias circuits. |
Pinout & Package
Package: MSOP-8 (3.0mm × 3.0mm × 1.1mm), exposed thermal pad, RoHS-compliant, JEDEC MO-187AC compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source 1 | Common source terminal for Channel 1; electrically tied to Pin 5 in internal die configuration. |
| 2 | Gate 1 | Control input for Channel 1; requires negative gate drive relative to Source 1 for enhancement-mode conduction. |
| 3 | Drain 1 | Power output node for Channel 1; connects to load or inductive flyback path in DC-DC topologies. |
| 4 | Drain 2 | Power output node for Channel 2; independent of Drain 1 but shares thermal mass via common package substrate. |
| 5 | Source 2 | Common source terminal for Channel 2; internally connected to Pin 1, forming dual-source configuration. |
| 6 | Gate 2 | Control input for Channel 2; fully isolated from Gate 1; enables independent or complementary switching. |
| 7 | Drain 3 / NC | No connection - unused pin; must remain floating or grounded per layout guidelines to avoid parasitic coupling. |
| 8 | Thermal Pad | Exposed copper pad (bottom center); mandatory solder connection to PCB ground plane for thermal and EMI performance. |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-channel topology | Two matched MOSFETs in one MSOP-8 package reduce board area by 40% vs discrete solutions while maintaining channel independence. |
| Low RDS(ON) at low VGS | 0.185Ω @ -4.5V enables full conduction with 3.3V microcontroller GPIOs without level-shifting circuitry. |
| Fast switching with low Qg | 5.5nC total gate charge allows clean 10ns–20ns transition times under 10mA drive, minimizing overlap loss in synchronous buck stages. |
| Thermally optimized MSOP-8 | Exposed thermal pad and 90°C/W θJA support >1.5W dissipation in 4-layer boards with 1in² copper pour, eliminating need for heatsinks. |
Applications
| Battery Protection Circuit | USB Power Delivery Switch |
|---|---|
Use Scenario: Dual-MOSFET reverse-polarity and overcurrent protection in Li-ion battery packs with cell balancing. IC Role / Device Role / Timing Role: High-side disconnect switch controlling charge/discharge paths; each channel handles separate current direction with shared source sensing. Use Value: 0.185Ω RDS(ON) limits voltage drop to <370mV at 2A, preserving battery runtime and enabling accurate coulomb counting. | Use Scenario: Bidirectional 5V/3A power path control between USB-C host and peripheral in portable docking stations. IC Role / Device Role / Timing Role: Dual-channel load switch managing VBUS sourcing and sinking; Gate 1 controls upstream, Gate 2 controls downstream path. Use Value: Matched threshold and RDS(ON) ensure symmetrical on-resistance in both directions, eliminating voltage offset in data+power negotiation. |
| Low-Voltage Synchronous Rectifier | Motor Driver Half-Bridge |
Use Scenario: Secondary-side rectification in 5V-output isolated flyback converters for IoT sensors. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by transformer-coupled gate signals with dead-time control. Use Value: 0.185Ω RDS(ON) reduces conduction loss by 65% vs 0.5V-drop diode, improving efficiency from 82% to 89% at 1A load. | Use Scenario: Compact H-bridge driver for 12V brushed DC motors in medical pumps and lab automation. IC Role / Device Role / Timing Role: High-side P-channel switch paired with external N-channel low-side; Gate 1 and Gate 2 drive opposite motor terminals. Use Value: Low gate charge enables precise PWM control at 20kHz without shoot-through risk, supporting smooth 10-bit speed resolution. |
Availability
ZXMD63P03XTC is available at Aetrix Electronics and suitable for DC-DC converters, battery protection circuits, and USB power delivery switches requiring stable component supply and long-term industrial availability.
Supply support for ZXMD63P03XTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and Malaysia.
This part belongs to Diodes' high-density power MOSFET product line, engineered specifically for space-constrained, low-voltage power management in portable and battery-operated equipment.
FAQ
What is the maximum allowable junction temperature for ZXMD63P03XTC?
The absolute maximum junction temperature is +150°C per the DS33503 datasheet. Operation above this limit risks permanent parametric shift or bond-wire failure. Derating curves show that at 70°C ambient, the device sustains -1.6A continuous current with 90°C/W θJA, yielding 130°C junction temperature - within safe margin.
Can ZXMD63P03XTC be used in linear regulation mode?
No - it is not characterized or qualified for linear (ohmic) operation. The Safe Operating Area (SOA) curve in DS33503 Rev. 2 shows only pulsed operation beyond VDS > 5V, and no DC SOA is specified. Continuous linear use risks thermal runaway due to positive temperature coefficient of RDS(ON).
Is the thermal pad electrically connected to any pin?
No - the exposed thermal pad is electrically isolated and must be soldered exclusively to a PCB ground plane or dedicated thermal copper pour. Internal die attachment uses non-conductive epoxy; connecting the pad to any signal or power net introduces noise coupling and violates JEDEC MO-187AC mechanical compliance.
Why is ZXMD63P03XTC marked "NOT RECOMMENDED FOR NEW DESIGN"?
Diodes Incorporated issued this notice in June 2018 due to planned obsolescence; no direct replacement was designated. The device remains fully functional and supported for existing designs, but new projects should consider alternatives like DMN6016LSD-13 or DMP3025LSD-13, which offer improved RDS(ON) and updated qualification.
ZXMD63P03XTC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- -
- Rds On (Max) @ Id, Vgs:
- 185mOhm @ 1.2A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 270pF @ 25V
- Power - Max:
- 1.04W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-MSOP
ZXMD63P03XTC FAQ
1.How can I place an order for ZXMD63P03XTC through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXMD63P03XTC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXMD63P03XTC reliable?
The price and inventory of ZXMD63P03XTC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMD63P03XTC is usually 5 days.
3.What payment methods are accepted for ZXMD63P03XTC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMD63P03XTC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZXMD63P03XTC?
ZXMD63P03XTC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXMD63P03XTC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXMD63P03XTC?
For technical support, including ZXMD63P03XTC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMD63P03XTC requirements.
6.How does Aetrix verify that ZXMD63P03XTC is sourced from the original manufacturer or authorized distributors?
All ZXMD63P03XTC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMD63P03XTC meets industry standards.
7.What is the process for return or replacement of ZXMD63P03XTC?
All ZXMD63P03XTC units undergo pre-shipment inspection (PSI). If there is an issue with ZXMD63P03XTC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXMD63P03XTC part is unused and in its original packaging.
Return procedure for ZXMD63P03XTC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ZXMD63P03XTC Tags

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2N7002DW-7-F
Diodes Incorporated

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