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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated ZXMD65P03N8TA

Name: ZXMD65P03N8TA
Brand: Diodes Incorporated
SKU: ZXMD65P03N8TA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXMD65P03N8TA

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: ZXMD65P03N8TA.pdf

Description:: MOSFET 2P-CH 30V 3.8A 8SO

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Product details

Overview

ZXMD65P03N8TA from Zetex is a dual P-channel enhancement-mode MOSFET in SOIC-8 package, rated for -30V V_DSS, 4.8A continuous drain current at 25°C, and 0.055Ω R_DS(on) at V_GS = -10V. It integrates two matched die for symmetrical power switching in low-voltage DC-DC converters and load disconnect circuits.

For engineers reviewing the ZXMD65P03N8TA datasheet, ZXMD65P03N8TA pinout, ZXMD65P03N8TA application, or ZXMD65P03N8TA equivalent, key selection criteria include dual P-MOS topology, SO8 thermal performance (R_θJA = 62.5°C/W on FR4), body diode recovery (t_rr = 31.5ns), and gate charge (Q_g = 25.7nC at -10V).

Technical Context

This dual P-channel MOSFET uses a high-density trench structure enabling simultaneous low R_DS(on) (0.055Ω) and fast switching (t_d(off) = 49.5ns, t_f = 26.2ns). Each channel operates independently with matched threshold voltage (V_GS(th) = -1.0V typ) and identical dynamic parameters including C_iss = 930pF and Q_gd = 7.0nC.

The device features integrated body diodes with V_SD = 0.95V at -4.9A and controlled reverse recovery (Q_rr = 63.9nC), supporting synchronous rectification and bidirectional current handling in compact power stages without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	-30 V: Maximum blocking voltage per channel before avalanche conduction begins
R_DS(on)	0.055 Ω @ V_GS = -10V, I_D = -4.9A: Enables <120mW conduction loss at 4.8A in 5V rail applications
I_D (cont)	-4.8 A @ T_A = 25°C: Continuous current rating per channel under standard SO8 PCB layout (25mm × 25mm, 1oz Cu)
Q_g	25.7 nC @ V_GS = -10V: Determines gate drive energy requirement and switching loss in PWM operation
t_rr	31.5 ns @ I_F = -4.9A, di/dt = 100A/µs: Limits reverse recovery loss during hard-switched commutation
R_θJA	62.5 °C/W: Thermal resistance from junction to ambient on FR4 PCB, defining max power dissipation (2.0W) before derating

Pinout & Package

SOIC-8 (3.9mm width), surface-mount package with exposed pad not present; 1.27mm pitch, 4.8–4.98mm body length, 3.81–3.99mm body width, 1.35–1.75mm height. Dual-die configuration with isolated source terminals per channel.

Pin/Terminal	Circuit Role	Design Meaning
1	Source 1	Return path for Channel 1; electrically isolated from Source 2 for independent grounding or floating configurations
2	Gate 1	Control input for Channel 1; requires -10V for full enhancement; threshold -1.0V typical
3	Drain 1	High-side switch node for Channel 1; rated -30V, supports bidirectional current via body diode
4	Drain 2	High-side switch node for Channel 2; mirrored electrical characteristics to Drain 1
5	Gate 2	Control input for Channel 2; fully independent of Gate 1; enables asynchronous or complementary control
6	Source 2	Return path for Channel 2; separate terminal allows split-rail or differential load switching
7	NC	No internal connection; must be left unconnected or tied to ground per layout guidelines
8	NC	No internal connection; no bonding wire; avoid routing signals or power near this pin

Key Features

Feature	Design Value
Dual matched P-channel die	Enables space-efficient half-bridge or dual-load control without discrete pairing or matching tolerance concerns
Low R_DS(on) + fast switching	Reduces combined conduction and switching losses in 3–12V input DC-DC stages operating up to 1MHz
Low gate threshold (-1.0V typ)	Allows direct interface with 3.3V logic controllers without level-shifting circuitry
Integrated body diode (V_SD = 0.95V)	Supports freewheeling and reverse current paths in H-bridge motor drives without external Schottky diodes
SOIC-8 footprint compatibility	Enables drop-in replacement of legacy dual MOSFETs (e.g., Si7852DP) using standard reflow profiles

Applications

Battery-Powered DC-DC Conversion

Load Disconnect Switching

Use Scenario: Step-down conversion from Li-ion battery (2.7–4.2V) to 1.8V core supply in portable medical sensors.

IC Role / Device Role / Timing Role: Dual P-MOS synchronous rectifier and high-side switch controlling buck converter output stage timing.

Use Value: 0.055Ω R_DS(on) minimizes dropout loss at 2A load; matched channels ensure balanced current sharing and thermal distribution.

Use Scenario: Isolating auxiliary 3.3V rail from main system during sleep mode in industrial IoT gateways.

IC Role / Device Role / Timing Role: Dual-channel load switch enabling independent enable/disable of two subsystems with single GPIO control.

Use Value: Low 1.0V gate threshold allows direct MCU GPIO drive; SO8 layout simplifies PCB routing versus discrete dual-SOT23 solution.

H-Bridge Motor Control

Redundant Power Path Management

Use Scenario: Driving 12V brushed DC motors in robotic end-effectors requiring bidirectional rotation and braking.

IC Role / Device Role / Timing Role: Two-quadrant switch pair forming one leg of H-bridge; body diodes handle regenerative braking current.

Use Value: 31.5ns t_rr and 63.9nC Q_rr reduce shoot-through risk and EMI during direction reversal transitions.

Use Scenario: Providing fail-safe backup power path for critical CAN transceivers in automotive body control modules.

IC Role / Device Role / Timing Role: Dual independent switches selecting between primary and secondary 5V supplies with OR-ing functionality.

Use Value: Independent source terminals allow Kelvin sensing and prevent cross-conduction; SO8 thermal margin supports 24/7 operation at 3.5A per channel.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) = 0.045Ω @ -10V but higher Q_g = 32nC; SO8 package with thermal pad	Better conduction loss but slower switching; requires thermal pad soldering for full 2.5W rating	Select when thermal budget dominates over switching frequency; verify PCB land pattern includes exposed pad
DMC3025LSD-13	Single-die dual P-MOS with shared source; R_DS(on) = 0.03Ω but no independent source terminals	Limited to common-source topologies; unsuitable for split-ground or differential load isolation	Select only for cost-sensitive, non-isolated dual-switch applications where source independence is unnecessary

Compared with Si7852DP and DMC3025LSD, ZXMD65P03N8TA provides unique independent source terminals and balanced thermal resistance (62.5°C/W) ideal for isolated load switching, while maintaining competitive R_DS(on) and faster turn-off delay (49.5ns) than alternatives.

Availability

ZXMD65P03N8TA is available at Aetrix Electronics and suitable for battery-powered DC-DC conversion, load disconnect switching, and H-bridge motor control requiring stable component supply and long-term industrial availability.

Supply support for ZXMD65P03N8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Zetex (now part of Diodes Incorporated) is a UK-based analog semiconductor specialist focused on high-performance discrete and power management solutions for industrial and portable electronics.

ZXMD series dual MOSFETs were designed specifically for space-constrained, low-voltage power systems needing matched dual-channel switching without thermal or timing skew between channels.

FAQ

What is the maximum safe operating temperature for ZXMD65P03N8TA?

The absolute maximum junction temperature is 150°C. With R_θJA = 62.5°C/W on a standard FR4 PCB, continuous operation at full 4.8A requires ambient temperature ≤ 110°C to stay within thermal limits. Derating begins at 25°C ambient, reducing allowable power by 16mW/°C above that point.

Can ZXMD65P03N8TA be used in linear regulator applications?

No - it is optimized for switching operation only. Its R_DS(on) is specified under pulsed conditions (≤2% duty cycle), and SOIC-8 package lacks thermal mass for sustained linear-mode power dissipation. Use dedicated LDOs or pass transistors with heatsinking for linear regulation.

Is the body diode in each channel rated for continuous conduction?

Yes - each channel's intrinsic body diode supports continuous forward current up to -3.0A (I_S) at 70°C ambient, with V_SD = 0.95V at -4.9A. Reverse recovery is characterized (t_rr = 31.5ns), making it suitable for synchronous rectification in buck converters.

How does the dual-die configuration affect gate drive requirements?

Each gate is electrically isolated, so total gate charge is additive: 25.7nC per channel means 51.4nC total for simultaneous switching. Gate drivers must supply ≥±10V with ≥1A peak current capability to achieve specified 6.4ns rise time across both channels with 6Ω series resistance.

ZXMD65P03N8TA Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 P-Channel (Dual)

FET Feature:: -

Drain to Source Voltage (Vdss):: 30V

Current - Continuous Drain (Id) @ 25°C:: 3.8A

Rds On (Max) @ Id, Vgs:: 55mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25.7nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 930pF @ 25V

Power - Max:: 1.25W

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

ZXMD65P03N8TA FAQ

1.How can I place an order for ZXMD65P03N8TA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMD65P03N8TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMD65P03N8TA reliable?

The price and inventory of ZXMD65P03N8TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMD65P03N8TA is usually 5 days.

3.What payment methods are accepted for ZXMD65P03N8TA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMD65P03N8TA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXMD65P03N8TA?

ZXMD65P03N8TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMD65P03N8TA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMD65P03N8TA?

For technical support, including ZXMD65P03N8TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMD65P03N8TA requirements.

6.How does Aetrix verify that ZXMD65P03N8TA is sourced from the original manufacturer or authorized distributors?

All ZXMD65P03N8TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMD65P03N8TA meets industry standards.

7.What is the process for return or replacement of ZXMD65P03N8TA?

All ZXMD65P03N8TA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMD65P03N8TA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMD65P03N8TA part is unused and in its original packaging.

Return procedure for ZXMD65P03N8TA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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