Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated ZXMHC10A07N8TC

Part No.:
ZXMHC10A07N8TC
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixZXMHC10A07N8TC.pdf
Description:
MOSFET 2N/2P-CH 100V 0.8A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:14,396

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

ZXMHC10A07N8TC from Diodes Incorporated is a complementary enhancement-mode MOSFET H-bridge in SOIC-8 package, integrating two N-channel (100V, 0.70Ω @ 10V) and two P-channel (−100V, 1.00Ω @ −10V) devices for bidirectional DC motor control. It delivers low gate charge (2.9 nC N-ch / 3.5 nC P-ch), supports ±20V gate drive, and operates across −55°C to +150°C junction temperature.

For engineers reviewing the ZXMHC10A07N8TC datasheet, ZXMHC10A07N8TC pinout, ZXMHC10A07N8TC application, or ZXMHC10A07N8TC equivalent, this device is selected for compact H-bridge designs requiring matched complementary channel performance, low RDS(on) at 6–10V drive, and integrated body diode recovery (trr = 27 ns N-ch / 29 ns P-ch).

Technical Context

This H-bridge uses discrete complementary MOSFETs-not integrated logic-requiring external gate drivers with independent high-side and low-side control. Each channel is rated for 100V VBRDSS, with N-channel ID = 1.0A and P-channel ID = −0.9A at TA = 25°C and VGS = ±10V.

Thermal design relies on SOIC-8 mounting per JEDEC MS-012: RθJA = 92°C/W (note b), RθJL = 139°C/W. Safe operating area (SOA) is defined per die-only one active at a time-with RDS(on)-limited boundaries up to 100V and 4.3A pulsed (N-ch) or −3.64A (P-ch).

Key Specifications

Parameter Value and Actual Design Meaning
VBRDSS N-ch: 100V; P-ch: −100V - defines maximum blocking voltage per channel before avalanche conduction
RDS(on) N-ch: 0.70Ω @ VGS=10V; P-ch: 1.00Ω @ VGS=−10V - determines conduction loss and thermal rise under load
Qg N-ch: 2.9nC; P-ch: 3.5nC - sets minimum gate driver current and switching energy requirement
tr/tf N-ch: 1.5ns/2.1ns; P-ch: 2.1ns/3.3ns - constrains minimum PWM frequency and EMI filtering needs
trr N-ch: 27ns; P-ch: 29ns - limits reverse recovery loss during shoot-through avoidance in H-bridge commutation
Tj Range −55°C to +150°C - enables operation in automotive under-hood or industrial motor-drive environments
PD (TA=25°C) 1.36W (N-ch), 1.36W (P-ch) - defines maximum continuous power dissipation without heatsinking

Pinout & Package

Package: SOIC-8 (JEDEC MS-012), 1.27 mm pitch, 5.00 mm × 4.00 mm body, 1.75 mm max height. Thermal pad not present; power dissipation relies on copper pour on drain pins.

Pin/Terminal Circuit Role Design Meaning
P1S / P2S P-channel source terminals Internally tied to common source node; used as H-bridge high-side return path
N1S / N2S N-channel source terminals Internally tied to common source node; used as H-bridge low-side return path
P1G / P2G P-channel gate inputs Independent control of upper P-MOSFETs; require negative gate bias relative to source
N2G / N1G N-channel gate inputs Independent control of lower N-MOSFETs; referenced to local source (low-side ground)
P1D / N1D Drain 1 (shared) Common drain node for first half-bridge leg; connects to motor terminal A
P2D / N2D Drain 2 (shared) Common drain node for second half-bridge leg; connects to motor terminal B

Key Features

Feature Design Value
Complementary H-bridge integration Two matched N+P pairs in single SOIC-8 reduce PCB footprint vs. discrete solutions by >40%
Low gate charge 2.9 nC (N) / 3.5 nC (P) enables efficient 100 kHz+ PWM with low-power gate drivers (e.g., TC4427)
Body diode recovery trr = 27 ns (N) / 29 ns (P) minimizes cross-conduction loss during dead-time transitions
100V blocking capability Supports 24V–48V DC bus systems with ≥2× voltage margin for inductive kick and surge transients
SOIC-8 thermal rating RθJA = 92°C/W (note b) allows 1.36W per channel at 70°C ambient without forced airflow

Applications

Brushed DC Motor Control DC-AC Inverter Stage

Use Scenario: Bidirectional speed/torque control of 24V–48V brushed DC motors in robotics and actuation systems.

IC Role / Device Role / Timing Role: Dual half-bridge switch enabling forward/reverse polarity reversal and PWM-based speed regulation.

Use Value: Matched N/P RDS(on) ensures symmetrical conduction loss in both directions; low Qg reduces gate drive power by >30% vs. legacy H-bridges.

Use Scenario: Low-power single-phase inverter driving resistive or lightly inductive loads (e.g., heating elements, fan controllers).

IC Role / Device Role / Timing Role: Complementary switching stage converting DC input to square-wave AC output via synchronized N/P channel toggling.

Use Value: 100V VBRDSS supports 32V RMS output; fast tr/tf (<3.3 ns) enables clean zero-crossing transitions with minimal harmonic distortion.

Industrial Valve Actuator Portable Power Tool Driver

Use Scenario: Precision open/close control of solenoid-actuated valves in fluid handling systems with 24V supply rails.

IC Role / Device Role / Timing Role: H-bridge delivering controlled current pulses to valve coils, including dynamic braking via synchronous rectification.

Use Value: Integrated body diodes with trr <30 ns enable efficient energy recirculation during coil de-energization, reducing heat and EMI.

Use Scenario: Compact battery-powered drill/driver requiring reversible torque and stall protection in 18–24V Li-ion systems.

IC Role / Device Role / Timing Role: Full-bridge motor interface with independent gate control for soft-start, current limiting, and direction reversal.

Use Value: SOIC-8 footprint fits space-constrained handheld enclosures; −55°C to +150°C rating ensures reliability under high-temp battery discharge conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary H-bridge applications.

Alternative Part Technical Difference Application Difference Selection Advice
Si7852DP-T1-GE3 SO-8 dual N-ch only (no P-ch); requires external high-side driver or bootstrap circuit Lacks integrated P-ch for true complementary drive; increases component count and layout complexity Prefer when high-current N-ch only topology suffices and gate drive resources allow bootstrap management
DMHC3025LSD-13 30V VBRDSS, lower RDS(on) (25 mΩ), but insufficient for 48V bus systems Rated only for ≤36V DC input; unsuitable for industrial 48V motor drives or surge-prone environments Select only for low-voltage portable tools or battery packs ≤30V nominal

Compared with Si7852DP-T1-GE3 and DMHC3025LSD-13, ZXMHC10A07N8TC uniquely provides matched 100V complementary channels in SOIC-8, eliminating external high-side level shifters while maintaining voltage headroom for transient suppression in 48V systems.

Availability

ZXMHC10A07N8TC is available at Aetrix Electronics and suitable for brushed DC motor control, DC-AC inverter stages, and industrial valve actuation requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for ZXMHC10A07N8TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial and automotive markets.

ZXMHC10A07N8TC belongs to Diodes' ZXM series of complementary MOSFET H-bridges, designed specifically for compact, cost-sensitive motor control applications where matched N/P characteristics and SOIC-8 integration are critical.

FAQ

What is the maximum continuous drain current per channel at 70°C ambient?

At TA = 70°C and VGS = ±10V, the N-channel supports 0.80A continuous drain current and the P-channel supports −0.68A, based on derating from the 1.0A/−0.85A ratings at 25°C using the 10.9 mW/°C linear derating factor (PD = 1.36W).

Can ZXMHC10A07N8TC be used in synchronous rectification mode?

Yes-the integrated body diodes have trr = 27 ns (N) and 29 ns (P), and VSD = 0.95V (N) / −0.95V (P) at rated current, enabling efficient synchronous rectification in buck-derived topologies when gate timing aligns with inductor current zero-crossing.

Is external gate resistor required for safe switching?

Yes-a series gate resistor (RG ≈ 6 Ω, per datasheet test condition) is recommended to damp ringing, limit peak gate current, and control dV/dt during turn-on/off; omitting it risks shoot-through or EMI compliance failure in high-frequency PWM.

How are the drain terminals configured internally?

P1D/N1D and P2D/N2D are internally shorted per half-bridge leg-each pair forms a common drain node. This configuration enables standard H-bridge wiring: leg 1 drains connect to motor terminal A, leg 2 drains to motor terminal B.

ZXMHC10A07N8TC Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N and 2 P-Channel (Full Bridge)
FET Feature:
-
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
800mA, 680mA
Rds On (Max) @ Id, Vgs:
700mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
2.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
138pF @ 60V, 141pF @ 50V
Power - Max:
870mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

ZXMHC10A07N8TC FAQ

1.How can I place an order for ZXMHC10A07N8TC through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMHC10A07N8TC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMHC10A07N8TC reliable?

The price and inventory of ZXMHC10A07N8TC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMHC10A07N8TC is usually 5 days.

3.What payment methods are accepted for ZXMHC10A07N8TC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMHC10A07N8TC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXMHC10A07N8TC?

ZXMHC10A07N8TC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMHC10A07N8TC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMHC10A07N8TC?

For technical support, including ZXMHC10A07N8TC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMHC10A07N8TC requirements.

6.How does Aetrix verify that ZXMHC10A07N8TC is sourced from the original manufacturer or authorized distributors?

All ZXMHC10A07N8TC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMHC10A07N8TC meets industry standards.

7.What is the process for return or replacement of ZXMHC10A07N8TC?

All ZXMHC10A07N8TC units undergo pre-shipment inspection (PSI). If there is an issue with ZXMHC10A07N8TC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMHC10A07N8TC part is unused and in its original packaging.

Return procedure for ZXMHC10A07N8TC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

ZXMHC10A07N8TC Tags

  • ZXMHC10A07N8TC
  • ZXMHC10A07N8TC PDF
  • ZXMHC10A07N8TC Datasheet
  • ZXMHC10A07N8TC Specifications
  • ZXMHC10A07N8TC Images
  • Diodes Incorporated
  • Diodes Incorporated ZXMHC10A07N8TC
  • Buy ZXMHC10A07N8TC
  • ZXMHC10A07N8TC Price
  • ZXMHC10A07N8TC Distributor
  • ZXMHC10A07N8TC Supplier
  • ZXMHC10A07N8TC Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER