Diodes Incorporated ZXMHC10A07T8TA

Overview

ZXMHC10A07T8TA from Diodes Incorporated is a complementary dual-N/dual-P-channel enhancement-mode MOSFET H-bridge in a single SM-8 (SOT-223-8) package, rated for ±100 V drain-source voltage, with R_DS(ON) of 0.7 Ω (N-ch @ 10 V) and 1.0 Ω (P-ch @ –10 V), supporting 1.4 A N-channel and –1.3 A P-channel continuous drain current at +25°C - used in bidirectional DC motor control and low-power DC-AC inverters.

For engineers reviewing the ZXMHC10A07T8TA datasheet, ZXMHC10A07T8TA pinout, ZXMHC10A07T8TA application, or ZXMHC10A07T8TA equivalent, key selection criteria include verified complementary channel matching, SOIC-compatible thermal performance (R_θJA = 94.5 °C/W), gate drive compatibility down to 6 V, and integrated body diode recovery (t_RR = 27–29 ns).

Technical Context

This H-bridge integrates two matched N-channel and two matched P-channel MOSFETs on a single die substrate within an SM-8 thermally enhanced package, enabling full four-quadrant switching without external cross-coupling. Its complementary threshold symmetry (V_GS(TH) = ±2.0 to ±4.0 V) and low input capacitance (C_iss = 138/141 pF) support clean, low-jitter commutation in PWM-driven loads.

The device uses discrete silicon die bonding rather than monolithic integration, preserving independent optimization of N- and P-channel characteristics - evidenced by asymmetric R_DS(ON) and Q_g values (2.9 nC vs. 3.5 nC), yet maintaining matched dynamic timing (t_D(ON)/t_D(OFF) ≤ 1.8/4.1 ns N-ch, 1.6/5.9 ns P-ch) for balanced bridge dead-time management.

Key Specifications

Pinout & Package

Package: SM-8 (8-lead SOT-223 variant), surface-mount, thermally enhanced with dual drain pads (D1/D2 for N-ch, D3/D4 for P-ch), matte tin-plated copper leadframe, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary H-bridge MOSFET applications.

Compared with DMHC1010LSD-13 and SI6926ADQ-T1-GE3, ZXMHC10A07T8TA offers superior thermal resistance (94.5 °C/W vs. 110+ °C/W) and physically isolated source terminals - critical for current-sense accuracy and failure containment in safety-critical motion control.

Availability

ZXMHC10A07T8TA is available at Aetrix Electronics and suitable for brushed DC motor control, low-voltage inverter stages, valve actuation drivers, and industrial solenoid interfaces requiring stable component supply across multi-year production cycles.

Supply support for ZXMHC10A07T8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

The ZXMHC series targets compact, thermally constrained H-bridge applications in portable industrial tools and battery-powered actuators, emphasizing low gate-drive voltage compatibility and RoHS-compliant green packaging.

FAQ

What is the maximum safe operating voltage for ZXMHC10A07T8TA in continuous DC operation?

The absolute maximum drain-source voltage is ±100 V under all conditions, but continuous DC operation must remain within the Safe Operating Area (SOA) limits defined in the datasheet. At +25°C ambient with 50 mm × 50 mm copper, the device supports up to 100 V at ≤1.1 A (N-ch) or ≤0.9 A (P-ch) with no derating. Exceeding 80 V at >0.5 A requires active cooling due to R_θJA-limited power dissipation.

Can ZXMHC10A07T8TA be used with 5 V logic-level gate drivers?

Yes - both N- and P-channel devices fully turn on at V_GS = ±6 V, with R_DS(ON) specified at that level (0.9 Ω N-ch, 1.45 Ω P-ch). However, using 5 V drivers yields ~15% higher conduction loss versus 10 V drive; gate charge remains unchanged, so switching speed is unaffected. For optimal efficiency, 8–10 V gate drive is recommended.

How are the drain terminals internally connected in the SM-8 package?

D1 and D2 are internally bonded together as a single N-channel drain node; D3 and D4 are similarly paralleled as a single P-channel drain node. This configuration allows either parallel high-current routing (e.g., D1+D2 to motor +, D3+D4 to motor –) or independent half-bridge use (e.g., D1/S1/G1 + D3/S3/G3 for one leg). No internal connection exists between N- and P-drain groups.

Does ZXMHC10A07T8TA include ESD protection on its gate terminals?

No - the device lacks integrated gate-oxide ESD protection structures. The absolute maximum gate-source voltage is ±20 V, and transient gate stress above ±15 V risks permanent damage. External 10 kΩ current-limiting resistors and 12 V Zener clamps (e.g., BZX84-C12) are required on each gate line in systems exposed to handling or system-level ESD events.