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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated ZXMHC3A01N8TC

Name: ZXMHC3A01N8TC
Brand: Diodes Incorporated
SKU: ZXMHC3A01N8TC
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXMHC3A01N8TC

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: ZXMHC3A01N8TC.pdf

Description:: MOSFET 2N/2P-CH 30V 2.17A 8SO

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Product details

Overview

ZXMHC3A01N8TC from Diodes Incorporated is a complementary enhancement-mode MOSFET H-bridge IC in SOIC-8 package, integrating two N-channel (30V, 125mΩ @ 10V) and two P-channel (-30V, 210mΩ @ -10V) MOSFETs for bidirectional motor control. It delivers 2.7A N-ch and -2.1A P-ch continuous drain current at 25°C with low gate charge (3.9nC/5.2nC) and supports DC motor drive in compact industrial actuators.

For engineers reviewing the ZXMHC3A01N8TC datasheet, ZXMHC3A01N8TC pinout, ZXMHC3A01N8TC application, or ZXMHC3A01N8TC equivalent, key selection criteria include verified R_DS(on) at 4.5V/10V, thermal resistance (R_θJA = 92°C/W), safe operating area limits, body diode recovery (trr = 17.7ns/19ns), and SOIC-8 layout compatibility for H-bridge PCB routing.

Technical Context

This H-bridge uses discrete complementary MOSFET pairs-two N-ch and two P-ch-configured as a full bridge with independent gate terminals per channel. Each MOSFET features logic-level compatible threshold voltages (V_GS(th) = ±1.0–3.0V) and optimized capacitance (C_iss = 190/204pF) to minimize switching losses during PWM operation.

Thermal design relies on junction-to-ambient (R_θJA = 92°C/W, 25mm×25mm 1oz Cu) and junction-to-lead (R_θJL = 139°C/W) metrics, with derating curves validated for single-die steady-state operation. Safe operating area (SOA) is defined separately for N- and P-channel devices up to 150°C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	N-ch: 30V; P-ch: -30V - defines maximum blocking voltage per half-bridge leg without avalanche conduction
R_DS(on)	N-ch: 125mΩ @ V_GS=10V; P-ch: 210mΩ @ V_GS=-10V - determines I²R conduction loss and thermal rise under load
Q_g	N-ch: 3.9nC; P-ch: 5.2nC - sets minimum gate driver current and switching time budget for 20kHz+ PWM
I_D (cont)	N-ch: 2.7A; P-ch: -2.1A @ T_A=25°C - establishes maximum continuous current per switch in thermally constrained layouts
t_rr	N-ch: 17.7ns; P-ch: 19ns - constrains dead-time requirements to prevent shoot-through during polarity reversal
R_θJA	92°C/W (25mm×25mm 1oz Cu) - enables thermal modeling of power dissipation in standard FR4 PCB footprints

Pinout & Package

Package: SOIC-8 (3.9mm × 4.9mm, 1.27mm pitch), surface-mount, with exposed drain pads for thermal conduction. Pin 1 marked by notch or dot.

Pin/Terminal	Circuit Role	Design Meaning
P1S / P2S	P-channel source	Common source node for both P-MOSFETs; tied to V_CC rail in high-side configuration
N1S / N2S	N-channel source	Common source node for both N-MOSFETs; connected to GND or low-side return path
P1G / P2G	P-channel gate	Independent gate inputs for upper P-MOSFETs; require negative or referenced drive relative to source
N2G / N1G	N-channel gate	Independent gate inputs for lower N-MOSFETs; driven referenced to local source (GND)
P1D/N1D	Drain (P1/N1)	Shared drain terminal forming one H-bridge output node (OUT1); carries bidirectional load current
P2D/N2D	Drain (P2/N2)	Shared drain terminal forming second H-bridge output node (OUT2); electrically isolated from OUT1

Key Features

Feature	Design Value
Complementary SOIC-8 H-bridge integration	Eliminates four discrete MOSFETs and associated layout complexity while maintaining independent gate control
Low R_DS(on) at 4.5V drive	N-ch: 180mΩ; P-ch: 330mΩ - enables direct microcontroller GPIO drive without level-shifting for low-power motor control
Matched SOA and thermal characteristics	Identical R_θJA and SOA curves for N/P devices simplify thermal design and current balancing across quadrants
Body diode with fast recovery	trr ≤ 19ns, Q_rr ≤ 15nC - reduces switching loss and EMI during freewheeling in brushed DC motor commutation

Applications

Brushed DC Motor Control

Small-Scale Inverter Stage

Use Scenario: Bidirectional speed and direction control of 12V/24V brushed DC motors in portable medical pumps and lab automation stages.

IC Role / Device Role / Timing Role: Full H-bridge power stage executing PWM-driven current reversal; gate timing synchronized to MCU timer outputs.

Use Value: 125mΩ/210mΩ R_DS(on) minimizes heat generation at 2A load, enabling fanless enclosure design in space-constrained instruments.

Use Scenario: Low-power DC-AC conversion in battery-backed emergency lighting inverters (<50W).

IC Role / Device Role / Timing Role: Switching core converting 12V DC to 50Hz square-wave AC; driven by complementary logic with programmable dead time.

Use Value: Matched N/P R_DS(on) and SOA ensure symmetrical conduction loss and thermal stress across positive/negative half-cycles.

Industrial Actuator Driver

Valve Positioning Module

Use Scenario: Precision open/close actuation of solenoid valves and linear positioners in HVAC control panels.

IC Role / Device Role / Timing Role: Current-limited H-bridge delivering controlled torque pulses; current sensing via R_DS(on) monitoring.

Use Value: 2.7A/–2.1A continuous rating supports peak inrush currents while staying within SOA limits at 70°C ambient.

Use Scenario: Proportional control of pneumatic valve spools using analog-modulated PWM in process instrumentation.

IC Role / Device Role / Timing Role: Bidirectional current source/sink driving coil windings; gate drive optimized for <100kHz switching.

Use Value: Low Q_g (3.9nC/5.2nC) enables efficient 20–50kHz PWM without excessive gate driver power consumption.

Equivalent & Alternatives

The following parts are listed as comparable options for similar H-bridge MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si9926BDY-T1-E3	Single SO-8 dual-N MOSFET (no P-ch); R_DS(on) = 32mΩ @ 10V; requires external high-side driver	Only suitable where bootstrap or isolated gate drive is available; not drop-in for P-ch-based H-bridge topologies	Select when higher efficiency at >1A is critical and gate drive architecture supports N-only bridges
DMHC3025LSD-13	Complementary pair in PowerDI3333; R_DS(on) = 25mΩ/45mΩ @ 10V; higher current (4.5A/–3.5A)	Larger footprint and different thermal path; requires re-layout for SOIC-8 replacement	Choose for higher power density and improved thermal performance where board space allows

Compared with Si9926BDY-T1-E3 and DMHC3025LSD-13, ZXMHC3A01N8TC offers integrated complementary topology in standard SOIC-8 with verified 4.5V drive capability-ideal for cost-sensitive, space-constrained H-bridges where external high-side drivers are undesirable.

Availability

ZXMHC3A01N8TC is available at Aetrix Electronics and suitable for brushed DC motor control, small-scale inverter stages, and industrial actuator driver applications requiring stable component supply and long-term manufacturability.

Supply support for ZXMHC3A01N8TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

ZXMHC3A01N8TC belongs to Diodes' ZXM series of integrated MOSFET H-bridges, designed specifically for compact, low-voltage bidirectional motor control in space- and cost-sensitive embedded systems.

FAQ

What is the maximum recommended gate drive voltage for ZXMHC3A01N8TC?

The absolute maximum gate-source voltage is ±20V for both N- and P-channel MOSFETs. For reliable operation, drive V_GS between –12V and +12V. Exceeding ±20V risks permanent gate oxide damage, especially during transient events or layout-induced ringing. The device is characterized for optimal R_DS(on) at ±10V, with functional operation down to ±4.5V.

Can ZXMHC3A01N8TC be used in synchronous rectification mode?

No-ZXMHC3A01N8TC is not designed for synchronous rectification. Its internal structure lacks coordinated gate timing control, body diode recovery is optimized for motor freewheeling (not high-frequency rectification), and no internal logic prevents shoot-through during simultaneous conduction. Use dedicated synchronous rectifier controllers with external FETs instead.

How is thermal performance affected when both N- and P-channel devices operate simultaneously?

Simultaneous conduction increases total power dissipation but does not exceed the SOA limit if current remains within rated values. Thermal resistance (R_θJA = 92°C/W) applies per active die; simultaneous operation raises junction temperature additively. Derate total power by ≥20% versus single-die operation and verify with IR thermography under worst-case load conditions.

Does ZXMHC3A01N8TC include integrated overtemperature protection?

No-ZXMHC3A01N8TC has no built-in thermal shutdown circuitry. Protection must be implemented externally via system-level temperature monitoring (e.g., NTC on heatsink or PCB copper pour) and MCU-controlled gate disable. The datasheet specifies maximum junction temperature (150°C) and provides SOA curves to guide safe operating boundaries.

ZXMHC3A01N8TC Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N and 2 P-Channel (Full Bridge)

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 30V

Current - Continuous Drain (Id) @ 25°C:: 2.17A, 1.64A

Rds On (Max) @ Id, Vgs:: 125mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 3.9nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 190pF @ 25V, 204pF @ 15V

Power - Max:: 870mW

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

ZXMHC3A01N8TC FAQ

1.How can I place an order for ZXMHC3A01N8TC through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMHC3A01N8TC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMHC3A01N8TC reliable?

The price and inventory of ZXMHC3A01N8TC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMHC3A01N8TC is usually 5 days.

3.What payment methods are accepted for ZXMHC3A01N8TC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMHC3A01N8TC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXMHC3A01N8TC?

ZXMHC3A01N8TC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMHC3A01N8TC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMHC3A01N8TC?

For technical support, including ZXMHC3A01N8TC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMHC3A01N8TC requirements.

6.How does Aetrix verify that ZXMHC3A01N8TC is sourced from the original manufacturer or authorized distributors?

All ZXMHC3A01N8TC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMHC3A01N8TC meets industry standards.

7.What is the process for return or replacement of ZXMHC3A01N8TC?

All ZXMHC3A01N8TC units undergo pre-shipment inspection (PSI). If there is an issue with ZXMHC3A01N8TC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMHC3A01N8TC part is unused and in its original packaging.

Return procedure for ZXMHC3A01N8TC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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