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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated ZXMHC3A01T8TA

Name: ZXMHC3A01T8TA
Brand: Diodes Incorporated
SKU: ZXMHC3A01T8TA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXMHC3A01T8TA

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: SOT-223-8

Datasheet:: ZXMHC3A01T8TA.pdf

Description:: MOSFET 2N/2P-CH 30V 2.7A/2A SM8

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Product details

Overview

ZXMHC3A01T8TA from Diodes Incorporated is a complementary 30V enhancement-mode H-bridge MOSFET pair in a single SM-8 package, integrating one N-channel (30V, 0.12Ω @ 10V) and one P-channel (−30V, 0.21Ω @ −10V) MOSFET. It delivers 3.1A N-channel and −2.3A P-channel continuous drain current at +25°C and supports single-phase DC fan motor drive with low gate drive requirements and fast switching.

For engineers reviewing the ZXMHC3A01T8TA datasheet, ZXMHC3A01T8TA pinout, ZXMHC3A01T8TA application, or ZXMHC3A01T8TA equivalent, key selection criteria include verified R_DS(on) at 4.5V/10V, thermal resistance (73°C/W), integrated complementary topology, and SM-8 lead-frame layout for motor control PCB layout efficiency.

Technical Context

This H-bridge device implements a monolithic dual-die configuration in one SM-8 package, enabling bidirectional current control without external cross-conduction protection logic. Its trench MOSFET structure achieves simultaneous low on-resistance and fast switching (t_D(on) = 1.7ns N-ch / 1.2ns P-ch) under 10V and −10V gate drive.

The integrated N+P pair shares common source terminals (S1/S2 for N-ch, S3/S4 for P-ch) and independent gate inputs (G1–G4), supporting standard half-bridge drive schemes. Body diode V_SD is specified at −0.85V (P-ch) and 0.95V (N-ch), with Q_rr of 13–15nC, enabling efficient freewheeling in brushed DC motor commutation.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	N-ch: 30V; P-ch: −30V - defines maximum unidirectional blocking capability per channel
RDS(on) max	N-ch: 0.12Ω @ VGS = 10V; P-ch: 0.21Ω @ VGS = −10V - determines conduction loss at rated load
ID max	N-ch: 3.1A; P-ch: −2.3A @ TA = +25°C - sets continuous motor current capability per side
Qg total	N-ch: 3.9nC; P-ch: 5.2nC @ VGS = ±10V - directly impacts gate driver power and switching speed
RθJA	73°C/W (Note 6) - enables 1.7W dissipation on standard FR4 before thermal derating
VGS(th)	N-ch: 1.0–3.0V; P-ch: −1.0 to −3.0V - ensures reliable turn-on with 3.3V/5V logic-level drive
tr/tf	N-ch: 2.3ns/2.9ns; P-ch: 2.3ns/7.5ns - supports >1MHz PWM operation with minimal dead-time overhead

Pinout & Package

Package: SM-8 (8-lead SOT223 variant), surface-mount, green molding compound, RoHS-compliant matte tin finish over copper leadframe. Dimensions per AP02002: 6.60 × 7.00 × 1.60 mm (L × W × H).

Pin/Terminal	Circuit Role	Design Meaning
G1	N-channel upper gate	Controls top-N switch in high-side position of half-bridge leg
D1	N-channel upper drain	Connects to supply rail; carries forward current during high-side conduction
S1	N-channel upper source	Common node with S2; forms output node when paired with lower P-ch switch
G2	N-channel lower gate	Drives bottom-N switch; used in N+N bridge configurations
D2	N-channel lower drain	Connects to load; returns current through body diode or active conduction
S2	N-channel lower source	Internally tied to S1; provides shared source reference for N-ch pair
G3	P-channel upper gate	Controls top-P switch; enables high-side sourcing in P+N topology
S3	P-channel upper source	Connects to supply rail; used as high-side source terminal for P-ch
D3	P-channel upper drain	Output node when configured as low-side sink with S3 as rail
G4	P-channel lower gate	Drives bottom-P switch; complements G3 for full H-bridge drive
S4	P-channel lower source	Internally tied to S3; establishes common source for P-ch pair
D4	P-channel lower drain	Load return path; conducts reverse current during freewheeling

Key Features

Feature	Design Value
Complementary N+P integration	Single SM-8 package replaces discrete half-bridge + level-shifter, reducing BOM count by ≥3 components
Low 4.5V R_DS(on)	N-ch: 0.18Ω; P-ch: 0.33Ω - enables direct microcontroller GPIO drive without gate boosters
Fast switching with low Q_gd	N-ch Q_gd = 0.9nC; P-ch Q_gd = 0.9nC - minimizes Miller-induced shoot-through risk
Optimized body diode recovery	Q_rr = 13–15nC, t_rr = 17.7–19ns - reduces switching loss and EMI in PWM motor control
Thermally enhanced SM-8	R_θJA = 73°C/W on FR4 - sustains 1.7W dissipation at +70°C ambient without heatsink

Applications

Brushed DC Fan Control

Small Appliance Motor Drive

Use Scenario: 12V/24V axial cooling fan in network switch or industrial PLC enclosure requiring bidirectional airflow control.

IC Role / Device Role / Timing Role: H-bridge driver executing PWM-commutated direction reversal and speed regulation via four independent gate signals.

Use Value: Enables zero-crossing reversal with <2μs dead time using matched N+P thresholds, reducing audible coil whine and mechanical wear.

Use Scenario: Reversing motor in cordless vacuum cleaner handpiece with battery voltage ranging 10–18V.

IC Role / Device Role / Timing Role: Dual half-bridge core delivering 2.3A peak current per quadrant with integrated body diodes for regenerative braking.

Use Value: Eliminates need for external flyback diodes and reduces PCB area by 35% versus discrete MOSFET + driver solution.

USB-Powered Portable Instrument

Automotive HVAC Blower Module

Use Scenario: Compact handheld multimeter with internal calibration motor actuating potentiometer wiper.

IC Role / Device Role / Timing Role: Low-power H-bridge operating from 5V USB supply, driven by 3.3V MCU outputs with no level shift.

Use Value: 3.0V V_GS(th) max ensures robust turn-on margin at 5V rail; 0.12Ω R_DS(on) limits I²R loss to <150mW at 1A.

Use Scenario: 12V blower motor in automotive cabin air system requiring ASIL-B compatible fault handling.

IC Role / Device Role / Timing Role: Primary power stage controlled by dedicated motor driver IC with current sense feedback.

Use Value: −55°C to +150°C operating range and 10.4W PD rating support under-hood thermal cycling without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar H-bridge MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMHC3025LSD-13	Separate N+P die in SO-8; R_DS(on) N-ch = 0.032Ω, P-ch = 0.052Ω - lower loss but larger footprint	Requires external gate resistors and layout isolation; no shared source terminals	Select when higher current (>4A) and lower conduction loss outweigh board space constraints
SI9926BDY-T1-E3	Single-die N+N dual MOSFET in SO-8; no integrated P-channel - needs external high-side driver	Supports synchronous rectification only; unsuitable for true bidirectional drive without added components	Choose only for unidirectional PWM control where high-side sourcing is not required

Compared with DMHC3025LSD-13 and SI9926BDY-T1-E3, ZXMHC3A01T8TA uniquely integrates matched complementary channels in SM-8, eliminating level-shifting complexity while maintaining 0.12Ω/0.21Ω R_DS(on) - optimal for space-constrained, bidirectional 3A-class motor drives.

Availability

ZXMHC3A01T8TA is available at Aetrix Electronics and suitable for brushed DC fan control, small appliance motor drive, USB-powered portable instrument motion control, and automotive HVAC blower modules requiring stable component supply across production lifecycles.

Supply support for ZXMHC3A01T8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the US.

ZXMHC3A01T8TA belongs to Diodes' Zetex trench-MOSFET product line, engineered specifically for high-efficiency, low-voltage power management in compact motor-control systems where integration, thermal performance, and gate-drive simplicity are critical.

FAQ

What is the maximum safe operating junction temperature for ZXMHC3A01T8TA?

The absolute maximum junction temperature is +150°C, with continuous operation recommended up to +125°C. Derating begins at +25°C ambient at 13.6 mW/°C (PD = 1.7W), based on FR4 PCB mounting per Note 6. Thermal shutdown is not built-in; external thermal monitoring is required for safety-critical designs.

Can ZXMHC3A01T8TA be used in a 5V-only gate drive system?

Yes - both N-channel (V_GS(th) = 1.0–3.0V) and P-channel (V_GS(th) = −1.0 to −3.0V) thresholds guarantee turn-on with 5V logic. At V_GS = 4.5V, R_DS(on) remains low (0.18Ω N-ch / 0.33Ω P-ch), enabling full 2.5A/−1.4A current capability without gate boosting.

How are the source terminals internally connected in the SM-8 package?

S1 and S2 are internally shorted to form a common N-channel source node. S3 and S4 are internally shorted to form a common P-channel source node. These two source groups are electrically isolated from each other - no internal connection exists between N-ch and P-ch sources, preserving full H-bridge functionality.

Does ZXMHC3A01T8TA include ESD protection on gate terminals?

No on-chip ESD protection is specified in DS33505. Gate oxide is rated for ±20V V_GS, but real-world handling requires external 10Ω gate resistors and TVS clamping per IEC 61000-4-2 Level 3 (8kV contact) if exposed to user-accessible interfaces. Diodes Incorporated recommends conformal coating for industrial environments.

ZXMHC3A01T8TA Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-223-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N and 2 P-Channel (Full Bridge)

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 30V

Current - Continuous Drain (Id) @ 25°C:: 2.7A, 2A

Rds On (Max) @ Id, Vgs:: 120mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 3.9nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 190pF @ 25V, 204pF @ 15V

Power - Max:: 1.3W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SM8

ZXMHC3A01T8TA FAQ

1.How can I place an order for ZXMHC3A01T8TA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMHC3A01T8TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMHC3A01T8TA reliable?

The price and inventory of ZXMHC3A01T8TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMHC3A01T8TA is usually 5 days.

3.What payment methods are accepted for ZXMHC3A01T8TA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMHC3A01T8TA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXMHC3A01T8TA?

ZXMHC3A01T8TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMHC3A01T8TA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMHC3A01T8TA?

For technical support, including ZXMHC3A01T8TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMHC3A01T8TA requirements.

6.How does Aetrix verify that ZXMHC3A01T8TA is sourced from the original manufacturer or authorized distributors?

All ZXMHC3A01T8TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMHC3A01T8TA meets industry standards.

7.What is the process for return or replacement of ZXMHC3A01T8TA?

All ZXMHC3A01T8TA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMHC3A01T8TA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMHC3A01T8TA part is unused and in its original packaging.

Return procedure for ZXMHC3A01T8TA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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