Diodes Incorporated ZXMHC3F381N8TC

Overview

ZXMHC3F381N8TC from Diodes Incorporated is a complementary enhancement-mode MOSFET H-bridge IC in SOIC-8 package, integrating two N-channel (30V, 33mΩ @ 10V) and two P-channel (−30V, 55mΩ @ −10V) devices for bidirectional DC motor control. It supports low-voltage gate drive (4.5V), delivers 5.0A/−4.1A continuous drain current at 25°C, and features integrated body diodes with 12ns/16.5ns reverse recovery.

For engineers reviewing the ZXMHC3F381N8TC datasheet, ZXMHC3F381N8TC pinout, ZXMHC3F381N8TC application, or ZXMHC3F381N8TC equivalent, key selection criteria include verified R_DS(on) at 4.5V, dual-channel thermal derating (92–144°C/W R_θJA), SOIC-8 layout compatibility, and H-bridge switching timing (td(on)/td(off) ≤ 11.5ns).

Technical Context

This device implements a monolithic H-bridge topology with independent N- and P-channel pairs sharing common source terminals, enabling full four-quadrant motor control without external bootstrap circuitry. Its gate threshold voltages (1.0–3.0V for N-ch, −1.0 to −3.0V for P-ch) support TTL/CMOS-compatible logic-level drive.

The SOIC-8 package integrates thermally optimized drain leads (R_θJL = 128–131°C/W) and supports pulsed operation up to 22.9A/−19.6A with D = 0.02 duty cycle. Dynamic parameters-including Q_g = 9.0nC (N-ch) and 12.7nC (P-ch), C_iss = 430/670pF-enable high-frequency PWM switching with minimal gate drive loss.

Key Specifications

Pinout & Package

SOIC-8 package (4.80–5.00 mm width, 3.80–4.00 mm length, 1.35–1.75 mm height) with exposed drain pads for thermal management. Pin 1 marked via notch or dot; standard JEDEC MS-012AC footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar H-bridge MOSFET applications.

Compared with Si7850DP-T1-GE3 and DMHC3025LSD-13, ZXMHC3F381N8TC uniquely delivers fully integrated complementary H-bridge functionality in SOIC-8 with verified 4.5V drive and matched thermal resistance-enabling compact, self-contained motor control without auxiliary circuitry.

Availability

ZXMHC3F381N8TC is available at Aetrix Electronics and suitable for brushed DC motor control, DC-AC inverter stages, and automotive HVAC blower systems requiring stable component supply and long-term industrial lifecycle support.

Supply support for ZXMHC3F381N8TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions for industrial and automotive markets.

The ZXMHC3F381N8TC belongs to Diodes' complementary MOSFET H-bridge product line, designed specifically for space-constrained, low-voltage motor control applications requiring integrated N+P channel switching without external gate drive complexity.

FAQ

What is the maximum safe operating voltage for ZXMHC3F381N8TC in an H-bridge configuration?

The absolute maximum drain-source voltage is ±30V for both N- and P-channel devices. In H-bridge use, the total supply voltage must not exceed 30V to prevent avalanche breakdown in either channel during switching transients or shoot-through events. Derating to 24V is recommended for robust 125°C junction operation.

Can ZXMHC3F381N8TC be driven directly by a 3.3V microcontroller GPIO?

Yes-both N- and P-channel gates are specified for full enhancement at V_GS = 4.5V, and V_GS(th) ranges (1.0–3.0V for N-ch, −1.0 to −3.0V for P-ch) ensure reliable turn-on with 3.3V logic. However, R_DS(on) increases to 60mΩ/80mΩ, limiting continuous current to 3.9A/−3.3A at 25°C.

How is thermal management handled given the SOIC-8 package?

The SOIC-8 uses thermally enhanced drain leads with R_θJL = 128–131°C/W. For 1W per die, a 25mm × 25mm 1oz copper pad reduces R_θJA to 92°C/W. Layout must connect all four drain pins (P1D/N1D, P2D/N2D) to a common internal copper pour, avoiding isolation gaps.

Does ZXMHC3F381N8TC include internal gate resistors or ESD protection?

No-this device contains no integrated gate series resistors or input ESD clamps. External 10Ω gate resistors are required to damp ringing and limit peak gate current. Input pins must be protected with TVS diodes rated for ±20V if exposed to system-level ESD per IEC 61000-4-2 Level 4.