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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated ZXMHC6A07N8TC

Name: ZXMHC6A07N8TC
Brand: Diodes Incorporated
SKU: ZXMHC6A07N8TC
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXMHC6A07N8TC

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: ZXMHC6A07N8TC.pdf

Description:: MOSFET 2N/2P-CH 60V 1.39A 8SO

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Product details

Overview

ZXMHC6A07N8TC from Diodes Incorporated is a complementary enhancement-mode MOSFET H-bridge IC in SOIC-8 package, integrating two N-channel (60V, 0.25Ω @ 10V) and two P-channel (-60V, 0.40Ω @ -10V) devices for bidirectional motor control. It delivers 1.8A N-ch and -1.4A P-ch continuous drain current at 25°C with low gate charge (3.2nC/5.1nC), enabling efficient switching in compact DC motor drivers.

For engineers reviewing the ZXMHC6A07N8TC datasheet, ZXMHC6A07N8TC pinout, ZXMHC6A07N8TC application, or ZXMHC6A07N8TC equivalent, key selection criteria include verified R_DS(on) at 4.5V/–4.5V, thermal resistance (R_θJA = 92°C/W under defined PCB conditions), body diode recovery (t_rr = 20.5ns/22.6ns), and SOIC-8 layout compatibility for dual half-bridge routing.

Technical Context

This H-bridge operates as a monolithic quad-MOSFET topology with independent gate terminals for each channel, supporting standard 3.3V/5V logic-level drive via low V_GS(th) (1.0–3.0V N-ch, –1.0 to –3.0V P-ch). Its symmetrical complementary pairing enables true four-quadrant operation without external level-shifting circuitry.

Thermal design relies on split-drain copper pour per die (25mm × 25mm FR4, 1oz Cu), with junction-to-ambient R_θJA rated at 92°C/W for short-duration operation and 144°C/W for steady-state. Safe operating area (SOA) is validated up to 10ms pulses at 7.1A/–6.03A with R_DS(on)-limited boundaries.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BRDSS	N-ch: 60V, P-ch: –60V - supports 24V/36V DC bus systems with 2× voltage margin against transients
R_DS(on)	N-ch: 0.25Ω @ 10V, 0.35Ω @ 4.5V; P-ch: 0.40Ω @ –10V, 0.60Ω @ –4.5V - enables <1W conduction loss at 1.5A load
Q_G	N-ch: 3.2nC, P-ch: 5.1nC - allows <100ns total switching time with 6Ω gate resistor at 10V drive
I_D (cont)	N-ch: 1.8A, P-ch: –1.4A @ T_A=25°C - sufficient for 5W–10W brushed DC motors with forced-air cooling
t_rr	N-ch body diode: 20.5ns, P-ch body diode: 22.6ns - minimizes shoot-through risk and recirculation losses in PWM mode
R_θJA	92°C/W (t ≤ 10s), 144°C/W (steady-state) - defines minimum PCB copper area required for 1W dissipation at <100°C junction rise

Pinout & Package

Package: SOIC-8 (3.9mm × 4.9mm × 1.75mm), surface-mount, lead-free, RoHS-compliant. Pin pitch: 1.27mm. Thermal pad not present; power dissipation managed via drain leads (P1D/N1D and P2D/N2D) soldered to dedicated copper pours.

Pin/Terminal	Circuit Role	Design Meaning
P1S / P2S	P-channel source	Common source node for upper P-MOSFETs; connects to V_CC rail in high-side switch configuration
N1S / N2S	N-channel source	Common source node for lower N-MOSFETs; connects to GND or current-sense shunt
P1G / P2G	P-channel gate	Independent gate inputs for upper P-MOSFETs; require negative or referenced drive relative to P-source
N2G / N1G	N-channel gate	Independent gate inputs for lower N-MOSFETs; compatible with standard 0–5V logic drive
P1D / N1D	Drain 1 (shared)	Output terminal A of H-bridge; ties P1 drain and N1 drain together for one motor terminal connection
P2D / N2D	Drain 2 (shared)	Output terminal B of H-bridge; ties P2 drain and N2 drain together for second motor terminal connection

Key Features

Feature	Design Value
Complementary SOIC-8 H-bridge integration	Eliminates discrete layout complexity and interconnect inductance for dual half-bridge topologies
Low gate charge asymmetry	N-ch Q_G = 3.2nC and P-ch Q_G = 5.1nC enable matched turn-on/turn-off timing with simple RC gate networks
Body diode optimization	Fast t_rr (20.5/22.6ns) and low V_SD (0.80/–0.85V) reduce freewheeling losses and EMI during PWM decay
Thermally segmented die layout	Two independent active dies allow single-die derating (R_θJA = 92°C/W) without thermal coupling penalty
Logic-level compatible thresholds	V_GS(th) range (1.0–3.0V N-ch, –1.0 to –3.0V P-ch) ensures reliable turn-on with 3.3V microcontroller GPIO

Applications

Brushed DC Motor Control

DC-AC Inverter Stage

Use Scenario: Bidirectional speed and direction control of 24V brushed DC motors in portable medical pumps and lab automation stages.

IC Role / Device Role / Timing Role: Quad-MOSFET H-bridge providing full four-quadrant drive with independent gate control for precise torque reversal and regenerative braking.

Use Value: Low R_DS(on) at 4.5V enables direct MCU GPIO drive without gate drivers, reducing BOM count and board space by >30% versus discrete solutions.

Use Scenario: Low-power 100W DC-AC inverter for battery-backed LED lighting and emergency signage.

IC Role / Device Role / Timing Role: Half-bridge driver stage converting 24V DC to 50Hz/60Hz square-wave AC output using complementary switching pairs.

Use Value: Matched N/P R_DS(on) and fast t_rr minimize dead-time uncertainty and cross-conduction risk, improving inverter efficiency to >92% at 1A load.

Industrial Actuator Driver

Automotive HVAC Blower Module

Use Scenario: Position-controlled linear actuators in factory robotics requiring stall detection and soft-start ramping.

IC Role / Device Role / Timing Role: Current-controlled H-bridge with integrated body diodes enabling bidirectional current sensing through shared source nodes (N1S/N2S, P1S/P2S).

Use Value: Dual-source terminals allow Kelvin sense routing without additional pins, supporting ±5% current measurement accuracy at 1.5A.

Use Scenario: Variable-speed blower motor control in automotive cabin HVAC systems with LIN bus interface.

IC Role / Device Role / Timing Role: Compact H-bridge driver interfaced to 5V LIN transceiver MCU, delivering 0–100% PWM duty cycle with EMI-optimized switching.

Use Value: SOIC-8 footprint and low Q_G support 20kHz PWM without audible noise, meeting OEM EMC Class 3 requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar H-bridge MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMHC6010LSD-13	Single-package dual-N + dual-P, but higher R_DS(on): 0.32Ω/0.55Ω @ 4.5V; Q_G 4.5nC/6.8nC	Lower peak current rating (1.5A/–1.1A); less suitable for 24V motors above 8W	Prefer for cost-sensitive designs where 15% higher conduction loss is acceptable
SI6926ADQ-T1-GE3	SO-8 dual half-bridge with integrated gate drivers; R_DS(on) 0.28Ω/0.45Ω @ 4.5V; no body diode specs published	Requires external 5V supply for drivers; eliminates need for external level shifters but increases system voltage rails	Choose when board space permits extra decoupling and system already provides 5V bias

Compared with DMHC6010LSD-13 and SI6926ADQ-T1-GE3, ZXMHC6A07N8TC offers the lowest combined Q_G/R_DS(on) product at 4.5V drive, enabling higher efficiency in thermally constrained 24V motor drives without gate driver overhead.

Availability

ZXMHC6A07N8TC is available at Aetrix Electronics and suitable for brushed DC motor control, DC-AC inverter stages, and industrial actuator drivers requiring stable component supply and long-term manufacturability.

Supply support for ZXMHC6A07N8TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions for industrial and automotive markets.

ZXMHC6A07N8TC belongs to Diodes' ZXM series of integrated MOSFET H-bridges, engineered specifically for space-constrained, low-voltage DC motor control applications demanding logic-level drive and thermal predictability.

FAQ

What is the maximum safe operating frequency for ZXMHC6A07N8TC in PWM motor control?

Based on measured switching times (t_d(on) = 1.8ns, t_f = 2.0ns for N-ch; t_d(off) = 13ns for P-ch) and gate charge (3.2nC/5.1nC), the device supports clean 20kHz PWM with <5% dead time at 6Ω gate resistance. Operation beyond 50kHz requires careful PCB layout to minimize gate loop inductance and avoid ringing-induced shoot-through.

Can ZXMHC6A07N8TC drive a 36V motor?

No - its absolute maximum V_BRDSS is ±60V, but recommended operating V_DS is limited to 40V per the SOA curves. At 36V bus, transient spikes exceeding 60V during inductive kickback risk avalanche failure. It is rated for 24V nominal systems; use ZXMHC6A12N8TC (100V-rated) for 36V applications.

How is thermal performance affected when both N-ch and P-ch dies operate simultaneously?

Data sheet R_θJA values assume only one die active. Simultaneous operation increases junction temperature by ~15°C at 1W total dissipation due to thermal coupling. Derate total power by 20% or add 25mm² extra copper per drain pad to maintain <110°C T_J at 1.2A continuous load.

Are the body diodes suitable for synchronous rectification?

Yes - specified t_rr (20.5ns/22.6ns) and low V_SD (0.80V/–0.85V) meet requirements for synchronous rectification in 20–100kHz DC-DC converters. However, reverse recovery charge Q_rr (21.3nC/23.2nC) is higher than dedicated sync-FETs, so efficiency gain over Schottky alternatives is marginal below 5A.

ZXMHC6A07N8TC Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N and 2 P-Channel (Full Bridge)

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 60V

Current - Continuous Drain (Id) @ 25°C:: 1.39A, 1.28A

Rds On (Max) @ Id, Vgs:: 250mOhm @ 1.8A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 3.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 166pF @ 40V, 141pF @ 50V

Power - Max:: 870mW

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

ZXMHC6A07N8TC FAQ

1.How can I place an order for ZXMHC6A07N8TC through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMHC6A07N8TC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMHC6A07N8TC reliable?

The price and inventory of ZXMHC6A07N8TC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMHC6A07N8TC is usually 5 days.

3.What payment methods are accepted for ZXMHC6A07N8TC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMHC6A07N8TC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXMHC6A07N8TC?

ZXMHC6A07N8TC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMHC6A07N8TC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMHC6A07N8TC?

For technical support, including ZXMHC6A07N8TC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMHC6A07N8TC requirements.

6.How does Aetrix verify that ZXMHC6A07N8TC is sourced from the original manufacturer or authorized distributors?

All ZXMHC6A07N8TC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMHC6A07N8TC meets industry standards.

7.What is the process for return or replacement of ZXMHC6A07N8TC?

All ZXMHC6A07N8TC units undergo pre-shipment inspection (PSI). If there is an issue with ZXMHC6A07N8TC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMHC6A07N8TC part is unused and in its original packaging.

Return procedure for ZXMHC6A07N8TC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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