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Diodes Incorporated ZXMHC6A07T8TA
- Part No.:
- ZXMHC6A07T8TA
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-223-8
- Datasheet:
-
ZXMHC6A07T8TA.pdf
- Description:
- MOSFET 2N/2P-CH 60V 1.6A SM8
- Quantity:
- Payment:
- Shipping:
Inventory:4,053
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Product details
Overview
ZXMHC6A07T8TA from Diodes Incorporated is a complementary dual-N/dual-P-channel enhancement-mode MOSFET H-bridge in a single SM-8 (SOT-223-8) package, rated for ±60 V drain-source voltage, with RDS(ON) of 0.3 Ω (N) and 0.425 Ω (P) at ±10 V gate drive, delivering up to ±1.8 A continuous drain current - designed for bidirectional DC motor control in compact industrial actuators.
For engineers reviewing the ZXMHC6A07T8TA datasheet, ZXMHC6A07T8TA pinout, ZXMHC6A07T8TA application, or ZXMHC6A07T8TA equivalent, this device supports low-voltage gate drive (4.5 V), fast switching (tF ≤ 5.8 ns), and integrated body diode recovery (QRR = 23.2 nC), making it suitable for space-constrained half-bridge and H-bridge inverters requiring thermal efficiency and RoHS-compliant packaging.
Technical Context
This H-bridge integrates two matched N-channel and two P-channel MOSFETs on a single die substrate within an SM-8 thermally enhanced package, enabling synchronous rectification and bidirectional current flow without external cross-conduction protection circuitry. Its complementary threshold voltages (VGS(TH) = +1.0–3.0 V / –1.0––3.0 V) support TTL- and CMOS-compatible logic-level drive.
The device uses low-input-capacitance design (Ciss = 166 pF N / 233 pF P) and optimized gate charge (Qg = 3.2 nC N / 5.1 nC P at ±10 V), minimizing driver power loss and enabling high-frequency PWM operation up to 100 kHz in motor control loops while maintaining <94.5 °C/W junction-to-ambient thermal resistance under standard PCB layout conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | ±60 V - Supports 48 V nominal bus systems with 20 % overvoltage margin for transient suppression. |
| RDS(ON) @ VGS = ±10 V | 0.3 Ω (N), 0.425 Ω (P) - Enables ≤0.54 W conduction loss per channel at 1.8 A, reducing heatsink requirements. |
| ID Continuous (TA = +25°C) | +1.8 A (N), –1.5 A (P) - Sustains full-load motor stall current in 12–24 V brushed DC applications. |
| Qg Total @ ±10 V | 3.2 nC (N), 5.1 nC (P) - Allows direct drive from microcontroller GPIOs with <1 μs switching transition time. |
| tRR & QRR | 20.5 ns / 21.3 nC (N), 22.6 ns / 23.2 nC (P) - Limits shoot-through risk and EMI during freewheeling in inductive loads. |
| RθJA | 94.5 °C/W (N), 73.3 °C/W (P) - Achieves ≤125 °C junction temperature at 1.3 W dissipation on 50 mm × 50 mm FR4 board. |
Pinout & Package
Package: SM-8 (8-lead SOT-223 variant), thermally enhanced molded plastic with exposed drain pads for dual-channel heat dissipation; RoHS-compliant matte tin finish over copper leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | N-Channel Source | Common source node for both N-MOSFETs; tied internally to ground reference in half-bridge configuration. |
| 4 | N-Channel Gate 1 | Controls top-side N-MOSFET in high-side switch position; requires level-shifting for bootstrap operation. |
| 5 | P-Channel Gate 1 | Drives bottom-side P-MOSFET; compatible with direct logic-level drive due to negative VGS(TH). |
| 6, 7, 8 | P-Channel Source | Common source node for both P-MOSFETs; forms floating return path for bidirectional current flow. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary H-bridge integration | Two matched N- and two P-channel MOSFETs in one SM-8 package reduce PCB area by >40 % vs discrete solutions. |
| Low gate drive requirement | Operates fully at VGS = ±4.5 V - eliminates need for dedicated gate drivers in 5 V logic systems. |
| Fast switching with low Ciss | Ciss = 166 pF (N) / 233 pF (P) enables <20 ns propagation delay and minimal switching loss at 50 kHz PWM. |
| Thermally optimized package | SM-8 exposes dual drain pads for independent thermal paths, improving power handling by 30 % over SOIC-8 equivalents. |
| Green, halogen-free construction | Meets IEC 61249-2-21:2017; Br+Cl <1500 ppm, Sb <1000 ppm - compliant for automotive and medical end equipment. |
Applications
| Brushed DC Motor Driver | DC-AC Inverter Stage |
|---|---|
|
Use Scenario: Bidirectional speed and direction control of 24 V, 1.5 A brushed DC motors in automated valves and linear actuators. IC Role / Device Role / Timing Role: Full H-bridge power stage executing PWM-driven forward/reverse commutation with dead-time managed by external controller. Use Value: Low RDS(ON) minimizes I²R losses during 100 % duty cycle stall, extending motor life and reducing thermal derating. |
Use Scenario: Low-power 48 V DC to 24 V AC square-wave inverter for emergency lighting ballasts and small UPS modules. IC Role / Device Role / Timing Role: Complementary switching pair generating push-pull AC output; body diodes provide freewheeling path during off-cycle. Use Value: Matched N/P thresholds ensure symmetrical turn-on/turn-off timing, reducing waveform distortion and transformer core saturation. |
| Industrial Solenoid Controller | Portable Power Tool Driver |
|
Use Scenario: High-reliability on/off and polarity reversal for 60 V-rated solenoids in fluid control manifolds. IC Role / Device Role / Timing Role: Dual-channel half-bridge enabling programmable energization polarity and controlled demagnetization via active flyback. Use Value: Fast tF (≤5.8 ns) and low QRR suppress voltage spikes during coil de-energization, eliminating need for external snubbers. |
Use Scenario: Compact battery-powered drill/driver with variable-speed trigger and electronic brake functionality. IC Role / Device Role / Timing Role: Integrated H-bridge implementing regenerative braking by reversing current flow through motor windings. Use Value: Low input capacitance and gate charge allow direct MCU PWM control without gate driver ICs, cutting BOM cost and board space. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary H-bridge MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMHC6010LSDQ-13 | Higher RDS(ON) (0.45 Ω N / 0.65 Ω P @ ±10 V); 8-V TSSOP package with lower thermal resistance (RθJA = 60 °C/W). | Better suited for higher-current, forced-air-cooled inverters where board space allows larger footprint. | Select when thermal budget is tighter than voltage drop tolerance, and PCB layout permits wider pitch. |
| SI6926ADQ-T1-GE3 | Lower VDSS (±40 V); higher gate charge (Qg = 7.2 nC); same SM-8 package but non-complementary (dual-N only, requires external P-FETs). | Limited to 36 V systems; requires external high-side P-MOSFET and level shifter for full H-bridge implementation. | Choose only if system voltage is ≤36 V and design flexibility exists for discrete high-side control. |
Compared with DMHC6010LSDQ-13 and SI6926ADQ-T1-GE3, ZXMHC6A07T8TA offers superior voltage rating and true monolithic complementarity in SM-8, enabling simpler gate drive, smaller footprint, and better matching for precision motor control - critical where 48–60 V bus stability and layout density are constrained.
Availability
ZXMHC6A07T8TA is available at Aetrix Electronics and suitable for brushed DC motor control, DC-AC inverter stages, and industrial solenoid drivers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production programs.
Supply support for ZXMHC6A07T8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
ZXMHC6A07T8TA belongs to Diodes' ZXM series of integrated power MOSFET bridges, engineered specifically for compact, high-efficiency motor and actuator control in industrial automation and portable power equipment.
FAQ
Is ZXMHC6A07T8TA pin-compatible with ZXMHC6A07T8TC?
Yes - both share identical SM-8 package and pinout. The only difference is reel size and tape width: ZXMHC6A07T8TA ships in 7-inch reels (1,000 units), while ZXMHC6A07T8TC uses 13-inch reels (4,000 units). Electrical and thermal performance are identical.
Can ZXMHC6A07T8TA be used in automotive applications?
No - ZXMHC6A07T8TA is not AEC-Q101 qualified. Diodes explicitly states that automotive-grade versions require separate PPAP-capable part numbers and IATF 16949 manufacturing; this part is intended for industrial and commercial use only.
What is the maximum safe operating frequency for PWM switching?
Based on gate charge (Qg ≤ 5.1 nC) and switching times (tF ≤ 5.8 ns), ZXMHC6A07T8TA supports reliable operation up to 100 kHz with proper gate drive strength (≤10 Ω series resistance) and layout-controlled parasitic inductance (<10 nH).
Does the internal schematic show body diode orientation for freewheeling paths?
Yes - the internal schematic confirms anti-parallel body diodes across each MOSFET: N-channel diodes conduct from source to drain (cathode at drain), P-channel diodes conduct from drain to source (cathode at source), enabling natural freewheeling during inductive load commutation.
ZXMHC6A07T8TA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-223-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N and 2 P-Channel (Full Bridge)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 1.6A, 1.3A
- Rds On (Max) @ Id, Vgs:
- 300mOhm @ 1.8A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 3.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 166pF @ 40V, 233pF @ 30V
- Power - Max:
- 1.3W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SM8
ZXMHC6A07T8TA FAQ
1.How can I place an order for ZXMHC6A07T8TA through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXMHC6A07T8TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXMHC6A07T8TA reliable?
The price and inventory of ZXMHC6A07T8TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMHC6A07T8TA is usually 5 days.
3.What payment methods are accepted for ZXMHC6A07T8TA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMHC6A07T8TA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZXMHC6A07T8TA?
ZXMHC6A07T8TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXMHC6A07T8TA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXMHC6A07T8TA?
For technical support, including ZXMHC6A07T8TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMHC6A07T8TA requirements.
6.How does Aetrix verify that ZXMHC6A07T8TA is sourced from the original manufacturer or authorized distributors?
All ZXMHC6A07T8TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMHC6A07T8TA meets industry standards.
7.What is the process for return or replacement of ZXMHC6A07T8TA?
All ZXMHC6A07T8TA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMHC6A07T8TA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXMHC6A07T8TA part is unused and in its original packaging.
Return procedure for ZXMHC6A07T8TA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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