Diodes Incorporated ZXMHN6A07T8TA

Overview

ZXMHN6A07T8TA from Diodes Incorporated is a 60V N-channel trench MOSFET configured as an integrated H-bridge in a single SM-8 (SOT-223-8) package, delivering 1.6A continuous drain current at V_GS = 10V, R_DS(ON) = 0.3Ω, and fast switching with t_F = 2.0ns - used in compact DC-AC converters and brushed DC motor control circuits.

For engineers reviewing the ZXMHN6A07T8TA datasheet, ZXMHN6A07T8TA pinout, ZXMHN6A07T8TA application, or ZXMHN6A07T8TA equivalent, key selection criteria include its dual-MOSFET H-bridge topology, 60V V_DSS, low gate charge (Q_g = 3.2nC), body diode recovery (t_RR = 21ns), and thermal resistance (R_θJA = 76°C/W for dual-on operation).

Technical Context

This device integrates two matched N-channel MOSFETs in a monolithic H-bridge configuration with shared source terminals and independent gate/drain connections - enabling bidirectional current control without external cross-coupling logic. Its trench process delivers low R_DS(ON) and high transconductance (g_fs = 2.3S) while maintaining robust 60V breakdown rating.

The SM-8 package features three separate drain pads (D1, D2, D3) thermally optimized for power dissipation up to 1.6W with dual transistors active, and supports gate drive down to 4.5V (R_DS(ON) = 0.45Ω), making it suitable for 5V microcontroller-based motor drivers.

Key Specifications

Pinout & Package

Package: SM-8 (8-lead SOT-223 variant), molded plastic with three isolated drain pads (D1, D2, D3), exposed thermal pad, and matte tin-plated leads compliant with RoHS and halogen-free "Green" standards.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar H-bridge MOSFET applications.

Compared with DMN601DWKQ-7 and Si9926BDY-T1-E3, ZXMHN6A07T8TA uniquely provides monolithic H-bridge functionality with 60V rating and thermally optimized SM-8 packaging - reducing component count, layout area, and gate-drive complexity in space-constrained 24–48V motor and inverter designs.

Availability

ZXMHN6A07T8TA is available at Aetrix Electronics and suitable for brushed DC motor control, DC-AC inverter stages, and USB-powered fan drivers requiring stable component supply and long-term industrial lifecycle support.

Supply support for ZXMHN6A07T8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

ZXMHN6A07T8TA belongs to Diodes' Zetex high-performance trench MOSFET product line, engineered specifically for compact, high-efficiency H-bridge motor drivers and low-voltage DC-AC conversion where integration, thermal performance, and gate-drive simplicity are critical.

FAQ

Is ZXMHN6A07T8TA a single MOSFET or an integrated H-bridge?

ZXMHN6A07T8TA is a monolithic dual-N-channel H-bridge MOSFET - it contains two matched N-channel transistors with internally connected sources and three isolated drain terminals (D1, D2, D3) in one SM-8 package. It is not a single transistor nor a controller IC, but a power-switching die with integrated bridge topology.

What is the maximum continuous current per channel at 70°C ambient?

At T_A = +70°C, the continuous drain current rating is 1.3A per channel (per Absolute Maximum Ratings table, Note 6). This derating accounts for thermal limitations under standard FR-4 PCB mounting with 2oz copper; actual current depends on PCB copper area and airflow.

Can ZXMHN6A07T8TA be driven directly by a 3.3V microcontroller?

Yes - with V_GS(TH) ranging from 1.0V to 3.0V, the device turns on with 3.3V gate drive, though R_DS(ON) rises to 0.45Ω at V_GS = 4.5V (and higher at 3.3V). For minimal conduction loss, a 5V gate drive or gate driver is recommended; 3.3V operation is viable for low-duty-cycle or low-current applications.

Does ZXMHN6A07T8TA include built-in ESD or overtemperature protection?

No - ZXMHN6A07T8TA is a bare power MOSFET without integrated protection circuitry. It relies on external design measures: gate resistors for ESD suppression, PCB copper for thermal dissipation, and system-level current limiting or temperature monitoring. Its Absolute Maximum Ratings define safe operating boundaries but no internal protection is implemented.