Diodes Incorporated ZXMN10A07FTC

Overview

ZXMN10A07FTC from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in SOT23 package, optimized for low R_DS(on) (700 mΩ @ V_GS = 10 V) and fast switching in compact power management circuits. It delivers 0.76 A continuous drain current at 25°C, supports ±20 V gate drive, and features integrated body diode with 0.85 V forward voltage - used in DC-DC converter high-side switches and motor control disconnect stages.

For engineers reviewing the ZXMN10A07FTC datasheet, ZXMN10A07FTC pinout, ZXMN10A07FTC application, or ZXMN10A07FTC equivalent, key selection criteria include verified R_DS(on) at 6 V/10 V gate drive, thermal resistance (R_θJA = 155 °C/W), safe operating area limits, body diode recovery time (t_rr = 27–60 ns), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This discrete MOSFET operates in enhancement mode with a gate threshold voltage of 2–4 V, enabling direct interface with 3.3 V and 5 V logic controllers. Its low gate charge (Q_g = 2.9–6 nC) and fast switching times (t_D(on) = 1.8 ns, t_f = 2.1 ns) reduce switching losses in high-frequency buck converters.

The device integrates a monolithic body diode with reverse recovery charge Q_rr = 12 nC and t_rr = 27–60 ns, supporting synchronous rectification and freewheeling in bidirectional load control. Thermal design is enabled by R_θJL = 194 °C/W and validated 806 mW power dissipation on FR4 under pulsed conditions.

Key Specifications

Pinout & Package

Package: SOT23 - surface-mount plastic case, 0.008 g weight, UL 94V-0 rated, moisture sensitivity level 1, matte tin terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with DMN2004LK-7 and AO3400, ZXMN10A07FTC trades higher R_DS(on) for guaranteed AEC-Q101 compliance and tighter V_GS(th) distribution - critical for deterministic turn-on in safety-critical 0.5–0.8 A load switching.

Availability

ZXMN10A07FTC is available at Aetrix Electronics and suitable for DC-DC converters, motor control disconnect stages, and power management load switches requiring stable component supply across automotive, industrial, and medical OEM programs.

Supply support for ZXMN10A07FTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

ZXMN10A07FTC belongs to Diodes' ZXMN series of logic-level N-channel MOSFETs, engineered specifically for space-constrained, high-efficiency power switching in automotive and industrial systems where AEC-Q101 reliability and low gate charge are mandatory.

FAQ

Is ZXMN10A07FTC pin-compatible with other SOT23-3 N-channel MOSFETs?

Yes - ZXMN10A07FTC uses standard SOT23-3 pinout (Drain-Source-Gate, top view), matching industry-standard layout. Pin assignment is D-S-G per Diodes' marking diagram and AP02002 package outline. No adapter or footprint change is needed when substituting functionally similar SOT23-3 MOSFETs.

What is the maximum safe operating voltage for ZXMN10A07FTC in continuous DC applications?

The absolute maximum drain-source voltage is 100 V, but for reliable long-term operation, Diodes recommends limiting V_DS to ≤80 V in continuous DC use. This 20% derating accounts for transients, layout parasitics, and temperature-induced drift, ensuring margin against avalanche breakdown per DS33564 Rev. 6.

Does ZXMN10A07FTC require a gate resistor in typical 3.3 V MCU-driven applications?

A gate resistor (10–47 Ω) is recommended even with 3.3 V MCU drive to dampen ringing caused by trace inductance and MOSFET input capacitance (C_iss = 138–280 pF). Without it, overshoot can exceed ±20 V V_GS rating, risking gate oxide damage during fast edge transitions.

How does the body diode performance impact its use in synchronous rectification?

ZXMN10A07FTC's body diode has V_SD = 0.85–0.95 V and t_rr = 27–60 ns, making it unsuitable for primary synchronous rectification above 500 kHz. However, it performs reliably in low-frequency freewheeling (≤200 kHz) and fault-handling paths where controlled reverse recovery is more critical than ultra-low forward drop.