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Diodes Incorporated ZXMN10A08DN8TA

Part No.:
ZXMN10A08DN8TA
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixZXMN10A08DN8TA.pdf
Description:
MOSFET 2N-CH 100V 1.6A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,506

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Product details

Overview

ZXMN10A08DN8TA from Diodes Incorporated is a 100V N-channel enhancement-mode trench MOSFET in SO-8 package, featuring 0.25Ω RDS(on) at VGS = 10V, 2.1A continuous drain current, and fast switching (td(off) = 8ns), designed for DC-DC converter high-side switches and power-management disconnect functions.

For engineers reviewing the ZXMN10A08DN8TA datasheet, ZXMN10A08DN8TA pinout, ZXMN10A08DN8TA application, or ZXMN10A08DN8TA equivalent, key selection criteria include verified 100V BVDSS rating, low-threshold gate drive compatibility (VGS(th) = 2.0V min), body diode forward voltage (0.87V typ), thermal resistance (69°C/W on 25mm × 25mm FR4), and SO-8 lead-free packaging compliance.

Technical Context

This MOSFET employs a trench-gate structure optimized for simultaneous low conduction loss and fast switching transitions. Its 4.2nC total gate charge at 5V and 7.7nC at 10V enables efficient drive with standard logic-level controllers, while Crss of 14.2pF minimizes Miller-induced shoot-through risk in half-bridge configurations.

The device integrates a robust body diode with 27ns reverse-recovery time and 32nC Qrr, supporting synchronous rectification and bidirectional current handling in motor control H-bridges. Thermal design is supported by dual RθJA ratings (69°C/W and 100°C/W) reflecting PCB copper coverage impact on junction-to-ambient dissipation.

Key Specifications

ParameterValue and Actual Design Meaning
BVDSS100V - supports input rails up to 80V DC-DC converters with 20% safety margin
RDS(on)0.25Ω @ VGS=10V - delivers ≤1.3W conduction loss at 2.1A ID
VGS(th)2.0V min - compatible with 3.3V microcontroller GPIO direct drive
Qg7.7nC @ VGS=10V - enables <100ns turn-on with 100Ω gate resistor
trr27ns - limits commutation loss in 500kHz+ switching applications
RθJA69°C/W - requires ≥25mm² 1oz copper pad for 1.25W continuous operation
VSD0.87V typ @ IS=3.2A - reduces freewheeling loss vs. external Schottky in low-voltage motor drives

Pinout & Package

Package: SO-8 (Surface-Mount, 8-pin, 1.27mm pitch, 4.9mm × 6.0mm footprint, 1.45mm height), RoHS-compliant matte tin-plated leadframe, moisture sensitivity level 1.

Pin/TerminalCircuit RoleDesign Meaning
1 (G)GateControl terminal; accepts 0–10V logic-level drive; 1.8nC Qgs enables fast turn-on
2 (S)SourceReference node for gate drive; tied to power ground in low-side switch configuration
3 (D)DrainHigh-voltage output node; connects to load or inductive flyback path
4 (S)SourceSecond source pin; paralleled with Pin 2 to reduce source inductance in high-dI/dt switching
5 (S)SourceThird source pin; further lowers source loop inductance for stable PWM operation
6 (D)DrainSecond drain pin; paralleled with Pin 3 to handle 2.1A continuous current with minimal thermal rise
7 (D)DrainThird drain pin; enhances current sharing and thermal spreading across SO-8 thermal pad
8 (D)DrainFourth drain pin; provides low-inductance path to PCB copper pour for EMI reduction

Key Features

FeatureDesign Value
Low RDS(on)0.25Ω at 10V drive enables >95% efficiency in 12V-input buck converters at 2A load
Fast switching8ns turn-off delay + 3.2ns fall time supports 1MHz+ switching without excessive gate drive power
Low threshold voltage2.0V minimum VGS(th) allows direct interface with 3.3V MCU outputs without level-shifting
SO-8 thermal performance69°C/W RθJA on 25mm² copper enables 1.25W dissipation without heatsink in space-constrained designs
Green packageHalogen- and antimony-free molding compound (<900ppm Br+Cl, <1000ppm Sb) meets automotive environmental standards

Applications

DC-DC Buck ConvertersLoad Disconnect Switches

Use Scenario: 12V-to-3.3V point-of-load conversion in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 500kHz PWM frequency.

Use Value: 0.25Ω RDS(on) reduces conduction loss by 40% versus 0.4Ω alternatives, improving thermal margin at 2A output.

Use Scenario: Controlled power-up sequencing for FPGA core voltage rail in telecom baseband cards.

IC Role / Device Role / Timing Role: Inrush-limited hot-swap FET enabling soft-start via gate ramp control.

Use Value: Low VGS(th) (2.0V) permits precise 3.3V GPIO-controlled turn-on timing without auxiliary bias circuitry.

Motor Control H-BridgesUSB-C Power Delivery Switches

Use Scenario: Bidirectional 24V brushed DC motor driver in automated test equipment.

IC Role / Device Role / Timing Role: Low-side switch with integrated body diode conducting reverse recovery current during PWM dead-time.

Use Value: 27ns trr and 0.87V VSD minimize switching loss and heat generation during 20kHz PWM commutation.

Use Scenario: 20V/3A USB PD 3.1 power path switch in portable medical monitors.

IC Role / Device Role / Timing Role: Overvoltage-protected power switch isolating Type-C port from system battery during fault conditions.

Use Value: 100V BVDSS headroom ensures safe operation during 20V PD transient surges without avalanche stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN3020LSD-13RDS(on) = 0.03Ω lower (0.22Ω), but BVDSS = 30V - unsuitable for 100V systemsLimited to ≤30V input rails; cannot replace in 80V DC-DC or motor controlSelect only for low-voltage (≤24V), high-current applications where 100V rating is unnecessary
IRF7470PBFBVDSS = 100V matched, but RDS(on) = 0.32Ω higher and Qg = 12.5nC - slower, less efficientHigher conduction and switching loss increases thermal load in compact enclosuresAcceptable only if gate drive capability exceeds 15mA and board area allows larger thermal pad

Compared with DMN3020LSD-13 and IRF7470PBF, ZXMN10A08DN8TA uniquely balances 100V rating, sub-0.25Ω on-resistance, and 7.7nC gate charge-enabling high-efficiency, high-frequency operation in space- and thermally constrained 12–80V power systems without sacrificing reliability or drive simplicity.

Availability

ZXMN10A08DN8TA is available at Aetrix Electronics and suitable for DC-DC converters, load disconnect switches, and motor control H-bridges requiring stable component supply, consistent SO-8 packaging, and long-term industrial lifecycle support.

Supply support for ZXMN10A08DN8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' ZXMN trench-MOSFET product line, engineered specifically for high-efficiency, medium-voltage power management in space-constrained industrial and computing applications where low gate charge and robust thermal performance are critical.

FAQ

Is ZXMN10A08DN8TA suitable for automotive applications?

No-ZXMN10A08DN8TA is not AEC-Q101 qualified. While it meets RoHS and halogen-free requirements, Diodes explicitly states that automotive-grade versions require separate PPAP-capable part numbers and IATF 16949 manufacturing. This variant is intended for industrial and commercial use only.

What is the maximum continuous drain current at 100°C ambient?

At TA = 100°C, derating from the 2.1A rating at 25°C using the 14.5mW/°C linear factor yields ~1.0A maximum continuous ID. This assumes mounting on a 25mm × 25mm FR4 board with 1oz copper; actual current must be validated with measured junction temperature.

Can ZXMN10A08DN8TA be used in synchronous rectification?

Yes-the integrated body diode has 27ns trr and 32nC Qrr, making it viable for synchronous rectification in buck converters up to 500kHz. However, external Schottky diodes remain preferred above 1MHz due to lower Qrr and zero reverse recovery.

Does the SO-8 package include an exposed thermal pad?

No-the SO-8 outline specified in DS33566 Rev. 8 shows no exposed pad; thermal performance relies on standard leadframe conduction through pins 2–5 (sources) and 3,6–8 (drains) into PCB copper. The 69°C/W rating assumes full 25mm² copper coverage under the package footprint.

ZXMN10A08DN8TA Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
1.6A
Rds On (Max) @ Id, Vgs:
250mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:
7.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
405pF @ 50V
Power - Max:
1.25W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

ZXMN10A08DN8TA FAQ

1.How can I place an order for ZXMN10A08DN8TA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMN10A08DN8TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMN10A08DN8TA reliable?

The price and inventory of ZXMN10A08DN8TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMN10A08DN8TA is usually 5 days.

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ZXMN10A08DN8TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMN10A08DN8TA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMN10A08DN8TA?

For technical support, including ZXMN10A08DN8TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMN10A08DN8TA requirements.

6.How does Aetrix verify that ZXMN10A08DN8TA is sourced from the original manufacturer or authorized distributors?

All ZXMN10A08DN8TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMN10A08DN8TA meets industry standards.

7.What is the process for return or replacement of ZXMN10A08DN8TA?

All ZXMN10A08DN8TA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMN10A08DN8TA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMN10A08DN8TA part is unused and in its original packaging.

Return procedure for ZXMN10A08DN8TA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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