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Diodes Incorporated ZXMN10A08DN8TC
- Part No.:
- ZXMN10A08DN8TC
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
ZXMN10A08DN8TC.pdf
- Description:
- MOSFET 2N-CH 100V 1.6A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,317
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Product details
Overview
ZXMN10A08DN8TC from Diodes Incorporated is a 100V N-channel enhancement-mode trench MOSFET in SO-8 package, delivering 2.1A continuous drain current at 25°C with 0.25Ω RDS(on) at VGS = 10V and fast 3.4ns turn-on delay. It serves as a low-loss power switch in DC-DC converters, motor control H-bridge legs, and load disconnect circuits.
For engineers reviewing the ZXMN10A08DN8TC datasheet, ZXMN10A08DN8TC pinout, ZXMN10A08DN8TC application, or ZXMN10A08DN8TC equivalent, key selection criteria include its 100V BVDSS rating, 0.25Ω on-resistance at 10V gate drive, 7.7nC total gate charge, SO-8 thermal performance (RθJA = 69°C/W), and body diode forward voltage of 0.87V at 3.2A.
Technical Context
This MOSFET employs a trench-gate structure optimized for simultaneous low conduction loss and high switching speed. Its 405pF input capacitance and 14.2pF reverse transfer capacitance support efficient gate driving at up to 1MHz, while the 2.0V gate threshold enables compatibility with 3.3V and 5V logic-level controllers.
The integrated body diode exhibits 27ns reverse recovery time and 32nC Qrr, making it suitable for synchronous rectification and freewheeling in buck converters. Thermal design is supported by SO-8 mounting on 25mm × 25mm FR4 with 1oz copper, yielding 69°C/W junction-to-ambient resistance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS | 100V - supports input rails up to 80V DC-DC stages with 20% margin |
| RDS(on) | 0.25Ω @ VGS=10V - delivers ≤1.3W conduction loss at 2.1A continuous operation |
| ID (continuous) | 2.1A @ TA=25°C - rated for sustained load switching in compact power modules |
| Qg (total) | 7.7nC @ VDS=50V - enables efficient 1MHz switching with <1.5W gate driver power at 5V |
| VGS(th) | 2.0V min - ensures reliable turn-on with standard 3.3V microcontroller GPIOs |
| trr / Qrr | 27ns / 32nC - reduces switching loss and EMI in synchronous rectifier configurations |
| RθJA | 69°C/W - allows 1.25W dissipation before exceeding 125°C junction temperature on standard PCB |
Pinout & Package
Package: SO-8 (Surface-Mount, 8-pin, 4.9mm × 6.0mm footprint, 1.45mm height), RoHS-compliant green molding compound, matte tin-plated leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal requiring ≤7.7nC charge for full enhancement; sensitive to ESD (±20V max) |
| 2 (S) | Source | Reference node for gate drive; connects to ground or low-side return path in half-bridge |
| 3 (D) | Drain | High-side switching node; handles 100V blocking and 2.1A conduction with 0.25Ω loss |
| 4 (S) | Source | Parallel source connection for enhanced current handling and thermal spreading |
| 5 (S) | Source | Third source terminal-electrically tied to pins 2 and 4 for low-inductance PCB layout |
| 6 (D) | Drain | Second drain connection-internally bonded to pin 3 for improved thermal and current sharing |
| 7 (D) | Drain | Third drain terminal-reduces package inductance and improves high-frequency switching stability |
| 8 (D) | Drain | Fourth drain connection-enables high-current routing with minimal voltage drop across leads |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 0.25Ω at 10V gate drive minimizes I²R losses in battery-powered and energy-sensitive systems |
| Trench MOSFET architecture | Enables 3.4ns turn-on delay and 2.2ns rise time for high-frequency (>500kHz) SMPS designs |
| Low gate threshold | 2.0V minimum VGS(th) ensures robust turn-on with 3.3V logic without level-shifting circuitry |
| SO-8 thermal performance | 69°C/W RθJA on 25mm×25mm FR4 allows 1.25W continuous dissipation without heatsink |
| Green packaging | Halogen- and antimony-free compound (<900ppm Br/Cl, <1000ppm Sb) meets automotive and industrial environmental mandates |
Applications
| DC-DC Buck Converter | Motor Control Half-Bridge |
|---|---|
Use Scenario: Step-down regulation from 24V–48V bus to 5V/3.3V logic rails in industrial PLCs and IoT gateways. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500kHz–1MHz with body diode commutation. Use Value: 0.25Ω RDS(on) and 27ns trr reduce conduction and recovery losses, improving efficiency by ≥1.8% over comparable 0.35Ω MOSFETs. | Use Scenario: Driving 12V brushed DC motors in automated valves and HVAC actuators with PWM speeds up to 20kHz. IC Role / Device Role / Timing Role: High-current, low-RDS(on) low-side switch in H-bridge output stage, controlled by MCU GPIO. Use Value: 2.1A ID rating and 7.7nC Qg enable clean 20kHz switching with minimal gate drive power and thermal rise. |
| Load Disconnect Switch | Hot-Swap Circuit Protection |
Use Scenario: Controlled power-up sequencing for FPGA or DSP subsystems in telecom line cards and baseband units. IC Role / Device Role / Timing Role: Inrush-limited main power switch with soft-start via gate resistor control. Use Value: 100V BVDSS withstands transient surges during hot-insertion; SO-8 footprint simplifies layout in space-constrained backplanes. | Use Scenario: Protecting 48V intermediate bus from short-circuit faults in server power distribution units. IC Role / Device Role / Timing Role: Fast-acting current-limiting switch triggered by external sense amplifier and comparator. Use Value: 9A pulsed drain current and 3.4ns td(on) allow sub-100ns fault response, limiting energy let-through during arc events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3020LSD-13 | 30V BVDSS, 20mΩ RDS(on), 6.2A ID - lower voltage, higher current, smaller die | Suitable only for ≤24V systems; not viable for 48V+ DC-DC or motor drives | Select when operating voltage ≤30V and peak current >4A is required; avoid for 100V applications |
| IRF7470PBF | 100V BVDSS, 0.32Ω RDS(on), 1.9A ID - higher on-resistance, same package | Higher conduction loss (≥25% more I²R heating) at 2.1A; slower 12ns td(off) | Acceptable where cost sensitivity outweighs efficiency; verify thermal margin with 0.32Ω loss |
Compared with DMN3020LSD-13 and IRF7470PBF, ZXMN10A08DN8TC uniquely balances 100V capability, 0.25Ω on-resistance, and 7.7nC gate charge in SO-8-enabling higher efficiency in 48V industrial converters and faster switching than legacy 100V MOSFETs without increasing gate drive burden.
Availability
ZXMN10A08DN8TC is available at Aetrix Electronics and suitable for DC-DC converters, motor control subsystems, and load disconnect circuits requiring stable component supply and long-term industrial lifecycle support.
Supply support for ZXMN10A08DN8TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
ZXMN10A08DN8TC belongs to Diodes' ZXMN series of trench MOSFETs engineered for high-efficiency, medium-voltage power management in industrial, computing, and communications equipment where low RDS(on), fast switching, and SO-8 thermal reliability are critical.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The ZXMN10A08DN8TC supports 1.7A continuous drain current at TA = +70°C with VGS = 10V, per the Absolute Maximum Ratings table. This derating reflects thermal limits on a standard FR4 PCB; actual current depends on board copper area and airflow. For sustained 2.1A operation above 25°C, forced cooling or enhanced thermal pads are recommended.
Is this MOSFET suitable for 3.3V logic-level gate drive?
Yes-the device has a minimum gate threshold voltage of 2.0V and typical RDS(on) of 0.30Ω at VGS = 6V, enabling partial enhancement with 3.3V drive. However, full 0.25Ω performance requires 10V gate drive; for 3.3V-only systems, consider verifying on-resistance and power loss at actual operating current and temperature.
Does ZXMN10A08DN8TC have AEC-Q101 qualification?
No-this part is not AEC-Q101 qualified. The datasheet explicitly states that automotive-grade versions require separate change control, PPAP capability, and IATF 16949 manufacturing; ZXMN10A08DN8TC is intended for industrial and commercial applications. For automotive use, contact Diodes directly for qualified alternatives.
How does the SO-8 package affect thermal performance in high-power operation?
On a 25mm × 25mm FR4 PCB with 1oz copper, the SO-8 package achieves RθJA = 69°C/W, allowing ~1.25W continuous dissipation before reaching 125°C junction temperature. To exceed this, use thermal vias under the drain pads, increase copper area, or add localized airflow-standard SO-8 cannot dissipate >1.8W without auxiliary cooling.
ZXMN10A08DN8TC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 100V
- Current - Continuous Drain (Id) @ 25°C:
- 1.6A
- Rds On (Max) @ Id, Vgs:
- 250mOhm @ 3.2A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 7.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 405pF @ 50V
- Power - Max:
- 1.25W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
ZXMN10A08DN8TC FAQ
1.How can I place an order for ZXMN10A08DN8TC through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXMN10A08DN8TC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXMN10A08DN8TC reliable?
The price and inventory of ZXMN10A08DN8TC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMN10A08DN8TC is usually 5 days.
3.What payment methods are accepted for ZXMN10A08DN8TC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMN10A08DN8TC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZXMN10A08DN8TC?
ZXMN10A08DN8TC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXMN10A08DN8TC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXMN10A08DN8TC?
For technical support, including ZXMN10A08DN8TC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMN10A08DN8TC requirements.
6.How does Aetrix verify that ZXMN10A08DN8TC is sourced from the original manufacturer or authorized distributors?
All ZXMN10A08DN8TC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMN10A08DN8TC meets industry standards.
7.What is the process for return or replacement of ZXMN10A08DN8TC?
All ZXMN10A08DN8TC units undergo pre-shipment inspection (PSI). If there is an issue with ZXMN10A08DN8TC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXMN10A08DN8TC part is unused and in its original packaging.
Return procedure for ZXMN10A08DN8TC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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