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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZXMN10A11GTC

Name: ZXMN10A11GTC
Brand: Diodes Incorporated
SKU: ZXMN10A11GTC
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXMN10A11GTC

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: ZXMN10A11GTC.pdf

Description:: MOSFET N-CH 100V 1.7A SOT223

Quantity:: RFQ Add To RFQ list

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Inventory:4,201

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Product details

Overview

ZXMN10A11G from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in SOT223 package, with R_DS(on) = 350 mΩ @ V_GS = 10 V, I_D = 2.4 A at T_A = +25°C, and qualified to AEC-Q101 for automotive reliability. It serves as a high-efficiency power switch in DC-DC converters and motor control stages where low conduction loss and fast switching are required.

For engineers reviewing the ZXMN10A11G datasheet, ZXMN10A11G pinout, ZXMN10A11G application, or ZXMN10A11G equivalent, key selection criteria include its 100V V_DSS, 350 mΩ on-resistance at 10 V gate drive, 2.4 A continuous drain current, SOT223 thermal performance (R_θJA = 62.5 °C/W), and AEC-Q101 qualification for automotive-grade deployment.

Technical Context

This MOSFET operates in enhancement mode with a gate threshold voltage of 2.0–4.0 V and exhibits low input capacitance (C_iss = 274 pF) and fast switching (t_D(on) = 2.7 ns, t_f = 3.5 ns). Its body diode has V_SD = 0.85–0.95 V at I_S = 1.85 A and reverse recovery time t_rr = 26 ns under defined test conditions.

The device is optimized for unidirectional power switching in medium-voltage, moderate-current topologies. Its R_DS(on) increases only ~1.4× from 25°C to 150°C, and it supports pulsed drain currents up to 7.9 A with D = 0.02, enabling robust transient handling in regulated power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands up to 100 V drain-source voltage before breakdown, suitable for 48 V bus and 100 V flyback designs.
R_DS(on)	350 mΩ @ V_GS = 10 V - Delivers low conduction loss at full gate drive; enables <1 W dissipation at 2.4 A DC.
I_D (continuous)	2.4 A @ T_A = +25°C - Rated for sustained 2.4 A drain current with adequate PCB copper area (25 mm × 25 mm, 1 oz).
C_iss	274 pF - Low input capacitance reduces gate drive power and improves switching speed in PWM controllers.
t_f	3.5 ns - Fast fall time minimizes switching transition losses in high-frequency DC-DC converters (>500 kHz).
Q_g	5.4 nC @ V_GS = 10 V - Enables efficient gate driving with standard logic-level or dedicated MOSFET drivers.
T_J range	−55 to +150 °C - Supports operation across automotive under-hood and industrial ambient temperature extremes.

Pinout & Package

Package: SOT223 - Surface-mount plastic package with exposed drain tab for enhanced thermal conduction; 0.112 g mass; UL 94V-0 rated; moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Exposed metal tab electrically connected to drain; must be soldered to PCB copper pour for thermal and electrical continuity.
Source	Reference node for gate control and current return	Common return path for load current; ties to ground or low-side reference in buck/linear regulator configurations.
Gate	Control electrode for channel modulation	High-impedance input requiring clean, low-inductance routing; driven by logic-level or dedicated gate driver ICs.

Key Features

Feature	Design Value
Fast switching speed	t_D(on) = 2.7 ns, t_f = 3.5 ns - Reduces switching energy loss in high-frequency power supplies.
Low gate drive requirement	V_GS(th) = 2.0–4.0 V - Compatible with 3.3 V and 5 V microcontroller GPIO or logic-level drivers without level-shifting.
Low input capacitance	C_iss = 274 pF - Minimizes gate charge demand and driver stress in space-constrained applications.
AEC-Q101 qualified	Automotive-grade reliability validation - Meets stress testing requirements for temperature cycling, HTRB, and ESD per AEC-Q101 Rev D.
Green and RoHS-compliant	Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); lead-free matte tin finish - Complies with EU RoHS 2 and automotive environmental mandates.

Applications

Motor Control

DC-DC Converters

Use Scenario: Driving brushed DC motors in automotive HVAC actuators and seat positioners.

IC Role / Device Role / Timing Role: Low-side switching element controlling motor direction and duty-cycle via PWM.

Use Value: 350 mΩ R_DS(on) limits I²R heating at 2.1 A stall current; AEC-Q101 rating ensures long-term reliability in vehicle cabin environments.

Use Scenario: High-efficiency synchronous rectification in 48 V-to-12 V buck converters for telecom power systems.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to reduce conduction loss.

Use Value: 0.85 V body diode forward drop and fast t_rr = 26 ns enable >92% efficiency at 500 kHz switching frequency.

Uninterruptible Power Supply

Power Management Functions

Use Scenario: Battery charging and discharge path switching in 24 V UPS backup modules.

IC Role / Device Role / Timing Role: Bidirectional power switch managing battery isolation and load transfer during AC failure.

Use Value: 100 V V_DSS accommodates battery float voltage plus surge margin; 7.9 A pulsed rating handles inrush during load reconnection.

Use Scenario: Load switching for auxiliary rails (e.g., 5 V standby, 3.3 V I/O) in industrial PLC backplanes.

IC Role / Device Role / Timing Role: Controlled ON/OFF power gate with overcurrent protection interface.

Use Value: Low 350 mΩ on-resistance prevents >0.1 V droop at 200 mA loads; SOT223 footprint allows dense board layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN10H110SFD-13	Same V_DSS (100 V), lower R_DS(on) = 280 mΩ @ 10 V, but larger TSOP-6 package and higher Q_g = 7.5 nC.	Requires different PCB layout; better for higher-current, lower-frequency use cases where gate drive strength is available.	Select when lower conduction loss outweighs SOT223 footprint constraints and thermal budget permits larger package.
IPD10N10S3L-23	100 V, R_DS(on) = 230 mΩ @ 10 V, TO-252 package, higher I_D = 10 A, but not AEC-Q101 qualified.	Not automotive-qualified; suited for industrial power supplies where qualification is not mandated.	Choose for non-automotive applications needing higher current headroom and lower on-resistance, accepting larger footprint and no automotive reliability certification.

Compared with DMN10H110SFD-13 and IPD10N10S3L-23, ZXMN10A11G uniquely balances AEC-Q101 compliance, SOT223 thermal manageability, and 350 mΩ on-resistance-making it optimal for space-constrained, automotive-qualified medium-power switching where gate drive simplicity and qualification are mandatory.

Availability

ZXMN10A11G is available at Aetrix Electronics and suitable for motor control, DC-DC converters, and uninterruptible power supply applications requiring stable component supply, automotive-grade reliability, and surface-mount compatibility with standard SOT223 assembly processes.

Supply support for ZXMN10A11G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and the Americas.

ZXMN10A11G belongs to Diodes' ZXMN series of automotive-qualified power MOSFETs, engineered specifically for high-reliability, medium-voltage switching in automotive body electronics, industrial power management, and consumer power adapters.

FAQ

Is ZXMN10A11G suitable for 48 V automotive battery systems?

Yes. With 100 V V_DSS, AEC-Q101 qualification, and operation from −55°C to +150°C, ZXMN10A11G supports 48 V nominal battery systems including load dump transients (up to ~87 V) and cold-crank conditions. Its R_DS(on) stability over temperature ensures predictable conduction loss across the full automotive junction range.

What is the recommended PCB layout for thermal performance?

For optimal thermal performance, the SOT223 drain tab must be soldered to a ≥25 mm × 25 mm single-sided 1 oz copper pad. Use multiple thermal vias (≥6, 0.3 mm diameter) under the tab connecting to internal or backside ground planes. Maintain ≥0.25 mm clearance between the tab and adjacent traces to avoid solder wicking.

Can ZXMN10A11G replace a logic-level MOSFET in 3.3 V GPIO-driven circuits?

Yes. Its V_GS(th) range of 2.0–4.0 V ensures turn-on with 3.3 V gate drive, though R_DS(on) rises to 450 mΩ at V_GS = 6 V. For best efficiency, pair with a 5 V gate driver or ensure sufficient gate voltage margin to maintain <400 mΩ on-resistance under operating conditions.

Does ZXMN10A11G include an integrated body diode, and what are its characteristics?

Yes. It features a monolithic body diode with V_SD = 0.85–0.95 V at I_S = 1.85 A and reverse recovery time t_rr = 26 ns. This diode supports freewheeling in inductive loads and synchronous rectification, but is not optimized for high-frequency reverse recovery like dedicated Schottky diodes.

ZXMN10A11GTC Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 1.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 350mOhm @ 2.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 5.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 274 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223-3

ZXMN10A11GTC FAQ

1.How can I place an order for ZXMN10A11GTC through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMN10A11GTC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMN10A11GTC reliable?

The price and inventory of ZXMN10A11GTC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMN10A11GTC is usually 5 days.

3.What payment methods are accepted for ZXMN10A11GTC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMN10A11GTC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXMN10A11GTC?

ZXMN10A11GTC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMN10A11GTC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMN10A11GTC?

For technical support, including ZXMN10A11GTC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMN10A11GTC requirements.

6.How does Aetrix verify that ZXMN10A11GTC is sourced from the original manufacturer or authorized distributors?

All ZXMN10A11GTC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMN10A11GTC meets industry standards.

7.What is the process for return or replacement of ZXMN10A11GTC?

All ZXMN10A11GTC units undergo pre-shipment inspection (PSI). If there is an issue with ZXMN10A11GTC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMN10A11GTC part is unused and in its original packaging.

Return procedure for ZXMN10A11GTC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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