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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZXMN10A11K

Name: ZXMN10A11K
Brand: Diodes Incorporated
SKU: ZXMN10A11K
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXMN10A11K

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: ZXMN10A11K.pdf

Description:: MOSFET N-CH 100V 2.4A TO252-3

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Product details

Overview

ZXMN10A11K from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in TO252-3L package, rated for 3.5A continuous drain current at V_GS = 10V, with R_DS(on) = 350 mΩ and fast switching (t_r = 1.7 ns, t_f = 3.5 ns). It serves as a high-efficiency power switch in DC-DC converters and motor control circuits operating up to 150°C junction temperature.

For engineers reviewing the ZXMN10A11K datasheet, ZXMN10A11K pinout, ZXMN10A11K application, or ZXMN10A11K equivalent, key selection criteria include its 100V V_DSS, low gate charge (Q_g = 5.4 nC @ 10V), body diode recovery (t_rr = 26 ns), thermal resistance (R_θJA = 30.8 °C/W on 50 mm × 50 mm PCB), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This MOSFET employs planar silicon technology optimized for balanced conduction loss and switching speed. Its gate threshold voltage (2–4 V) enables robust drive compatibility with 3.3V and 5V logic, while low C_iss (274 pF) and C_rss (11 pF) reduce Miller effect and improve gate drive efficiency.

The device integrates a monolithic body diode with V_SD = 0.85–0.95 V at 1.85 A and t_rr = 26 ns under 100 A/μs di/dt, supporting synchronous rectification and freewheeling in buck and half-bridge topologies without external diode addition.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche; supports 48V input systems with 2× safety margin
R_DS(on)	350 mΩ @ V_GS = 10V - Conduction loss of 1.225 W at 3.5A; determines thermal rise in continuous operation
Q_g	5.4 nC @ V_GS = 10V - Gate drive energy requirement; sets minimum driver current for 100 ns switching
t_r/t_f	1.7 ns / 3.5 ns - Enables >1 MHz switching in hard-switched converters with low EMI generation
t_rr	26 ns - Fast body diode recovery reduces shoot-through risk and switching loss in bridge configurations
R_θJA	30.8 °C/W - Junction-to-ambient thermal resistance on 50 mm × 50 mm 2 oz copper; defines heatsink-free power limit
T_J max	150 °C - Maximum operating junction temperature; allows use in under-hood automotive environments

Pinout & Package

Package: TO252-3L (DPAK), surface-mount, single-sided 2 oz copper compatible, moisture sensitivity level 1 per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main current path output terminal	Connected to high-side switching node; carries full load current and dissipates conduction + switching losses
S (Source)	Reference node for gate drive and current return	Common connection point for load return path and gate driver ground; critical for stable V_GS control
G (Gate)	Control input for channel modulation	High-impedance input requiring <5.4 nC charge for full turn-on; sensitive to ringing due to low C_rss (11 pF)

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	1.89 Ω·nC - Optimized trade-off between conduction loss and gate drive loss for 100V-class switching
AEC-Q101 qualified	Validated for automotive powertrain and body electronics per stress test requirements (HTOL, TC, HTRB)
RoHS-compliant "Green" packaging	Halogen- and antimony-free molding compound (UL 94V-0), enabling compliance in EU and China RoHS markets
Fast body diode with low Q_rr	Q_rr = 30 nC - Reduces reverse recovery loss in non-synchronous buck and flyback converters

Applications

Motor Control

DC-DC Converters

Use Scenario: Brushed DC motor H-bridge driver in automotive seat adjusters and HVAC actuators.

IC Role / Device Role / Timing Role: Low-side switching element controlling motor direction and PWM speed regulation.

Use Value: 350 mΩ R_DS(on) limits I²R loss to ≤1.2 W at 3.5A, enabling compact thermally unmanaged PCB layout.

Use Scenario: Synchronous rectifier in 48V-to-12V buck converter for telecom power supplies.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to improve efficiency above 500 kHz.

Use Value: 26 ns t_rr prevents cross-conduction during dead-time, reducing voltage spikes and EMI.

Uninterruptible Power Supply

Power Management Functions

Use Scenario: Battery charging/discharge FET in 24V UPS backup systems with LiFePO₄ battery banks.

IC Role / Device Role / Timing Role: Bidirectional power path switch isolating battery from bus during fault conditions.

Use Value: 100V V_DSS accommodates 28V nominal battery plus surge transients up to 100V without clamping.

Use Scenario: Load switch for hot-swap rail sequencing in industrial PLC backplanes.

IC Role / Device Role / Timing Role: Controlled power enable/disable for downstream 5V/3.3V domains with inrush limiting.

Use Value: 2–4 V V_GS(th) ensures clean turn-on with standard logic-level drivers, avoiding partial conduction.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK100ZFP	Higher R_DS(on) (450 mΩ @ 10V), higher Q_g (10.5 nC), TO-220FP package	Larger footprint and higher thermal resistance (R_θJA = 62.5 °C/W); requires heatsink for >1.5A	Select when through-hole mounting or legacy board compatibility is required over thermal density
DMN10H110SFD-13	Lower R_DS(on) (280 mΩ @ 10V), same TO252-3L, but Q_g = 6.8 nC and t_r = 2.5 ns	Marginally slower switching and higher gate drive loss; identical AEC-Q101 qualification	Select when lower conduction loss dominates system efficiency over switching frequency constraints

Compared with STP10NK100ZFP and DMN10H110SFD-13, ZXMN10A11K offers the best balance of low gate charge (5.4 nC), fast switching (1.7 ns rise time), and proven AEC-Q101 reliability in surface-mount form-making it optimal for space-constrained, high-frequency automotive and industrial power stages.

Availability

ZXMN10A11K is available at Aetrix Electronics and suitable for motor control, DC-DC converters, and uninterruptible power supply applications requiring stable component supply, long-term lifecycle support, and automotive-grade qualification.

Supply support for ZXMN10A11K includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions.

The ZXMN series targets cost-sensitive, high-volume power switching applications where low R_DS(on), fast switching, and AEC-Q101 compliance are essential-particularly in automotive body electronics and industrial power conversion.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

At T_C = 100°C, the maximum continuous drain current is derated to approximately 2.1 A based on the linear derating factor of 32.4 mW/°C and P_D = 4.06 W at 25°C. This value assumes operation on a 50 mm × 50 mm 2 oz copper PCB with still air cooling and accounts for thermal saturation effects beyond simple linear extrapolation.

Does ZXMN10A11K support gate drive from 3.3V microcontrollers?

No-its gate threshold voltage range is 2–4 V, and full enhancement requires ≥6 V for R_DS(on) ≤ 450 mΩ. Driving with only 3.3V results in weak conduction (R_DS(on) > 1 Ω) and excessive heating. A dedicated gate driver or level-shifter is required for reliable 3.3V logic interface.

How does the body diode performance compare to external Schottky diodes?

The integrated body diode has V_SD = 0.85–0.95 V at 1.85 A and t_rr = 26 ns, outperforming standard silicon diodes but exhibiting higher forward drop than 0.45 V Schottky devices. It eliminates external component count in low-frequency (<500 kHz) freewheeling, though Schottky remains preferred for ultra-low-loss, high-frequency synchronous rectification.

Is ZXMN10A11K suitable for linear (analog) regulator applications?

No-it is optimized for switching operation, not linear mode. Its Safe Operating Area (SOA) curve shows limited DC capability (≤2.4 A at 10V V_DS), and prolonged linear operation risks thermal runaway due to positive temperature coefficient of R_DS(on). Use dedicated LDOs or bipolar pass transistors for analog regulation.

ZXMN10A11K Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 2.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 350mOhm @ 2.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 5.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 274 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2.11W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252-3

ZXMN10A11K FAQ

1.How can I place an order for ZXMN10A11K through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMN10A11K on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMN10A11K reliable?

The price and inventory of ZXMN10A11K are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMN10A11K is usually 5 days.

3.What payment methods are accepted for ZXMN10A11K?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMN10A11K transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXMN10A11K?

ZXMN10A11K orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMN10A11K order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMN10A11K?

For technical support, including ZXMN10A11K datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMN10A11K requirements.

6.How does Aetrix verify that ZXMN10A11K is sourced from the original manufacturer or authorized distributors?

All ZXMN10A11K products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMN10A11K meets industry standards.

7.What is the process for return or replacement of ZXMN10A11K?

All ZXMN10A11K units undergo pre-shipment inspection (PSI). If there is an issue with ZXMN10A11K, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMN10A11K part is unused and in its original packaging.

Return procedure for ZXMN10A11K:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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