Diodes Incorporated ZXMN10A25GTA

Overview

ZXMN10A25GTA from Diodes Incorporated (formerly Zetex Semiconductors) is a 100 V, 4 A N-channel enhancement-mode trench MOSFET in SOT223 package, featuring 0.125 Ω R_DS(on) at V_GS = 10 V and fast 4.9 ns turn-on delay, optimized for high-efficiency DC-DC converters and power disconnect switches.

For engineers reviewing the ZXMN10A25GTA datasheet, ZXMN10A25GTA pinout, ZXMN10A25GTA application, or ZXMN10A25GTA equivalent, key selection criteria include its 100 V V_DSS, low 0.150 Ω R_DS(on) at 6 V gate drive, 17 A pulsed drain current, integrated body diode with 40.5 ns reverse recovery time, and thermal resistance of 32 °C/W on FR4 PCB.

Technical Context

This MOSFET employs a trench-gate structure to simultaneously minimize conduction loss and switching loss. Its 0.125 Ω R_DS(on) at 10 V and 0.150 Ω at 6 V enable efficient operation with standard logic-level or microcontroller-compatible gate drivers.

Dynamic parameters-including 859 pF input capacitance, 33 pF reverse transfer capacitance, and 17 nC total gate charge at 10 V-support high-frequency switching up to several hundred kHz in synchronous buck or flyback topologies without excessive driver loading.

Key Specifications

Pinout & Package

SOT223 package: surface-mount, 4-pin thermally enhanced plastic outline with exposed drain pad (pin 1 = Gate, pin 2 = Drain, pin 3 = Source, pin 4 = Drain - pins 2 and 4 internally connected to drain and thermal pad).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMN3020LSD-13 and IRF7470PBF, ZXMN10A25GTA uniquely balances 100 V capability, SOT223 thermal performance, and sub-10 ns switching in a single-source, cost-optimized package-making it optimal for space-constrained 24–48 V industrial power stages.

Availability

ZXMN10A25GTA is available at Aetrix Electronics and suitable for DC-DC converters, power management functions, and motor control applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for ZXMN10A25GTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its portfolio of high-performance analog and discrete semiconductors for industrial, computing, and communications markets.

ZXMN10A25GTA belongs to Zetex's trench-MOSFET product line, engineered specifically for high-efficiency, medium-voltage power conversion where low R_DS(on), fast switching, and robust thermal behavior are critical.

FAQ

What is the maximum safe operating junction temperature for ZXMN10A25GTA?

The device is rated for T_j = –55 °C to +150 °C. Continuous operation above 125 °C requires derating per the 31 mW/°C linear factor from 3.9 W P_D at 25 °C. Thermal design must ensure junction temperature stays below 150 °C under worst-case ambient and power dissipation conditions.

Can ZXMN10A25GTA be driven directly by a 3.3 V microcontroller GPIO?

Yes-the gate threshold voltage range is 2.0–4.0 V, and R_DS(on) is specified at 0.150 Ω with V_GS = 6 V. At 3.3 V, the device will partially enhance but not fully saturate; for reliable switching, use a gate driver or level shifter to achieve ≥6 V gate drive.

Does ZXMN10A25GTA include an integrated body diode, and what are its characteristics?

Yes-it features an intrinsic body diode with forward voltage of 0.85–0.95 V at 4 A and 25 °C, and reverse recovery time of 40.5 ns at 2.9 A and 100 A/s di/dt. This diode supports freewheeling in asynchronous topologies but is not rated for continuous bidirectional conduction.

How does the SOT223 package affect thermal performance compared to SO-8 or TO-220?

SOT223 provides 32 °C/W R_JA on FR4 (vs. ~60 °C/W for SO-8), enabled by its exposed drain pad soldered to PCB copper. While less effective than TO-220, it offers superior thermal density for space-constrained boards-delivering 3.9 W dissipation without a heatsink when properly laid out.