Diodes Incorporated ZXMN10A25K

Overview

ZXMN10A25K from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in TO252 (DPAK) package, rated for 6.4A continuous drain current at V_GS = 10V, with R_DS(on) = 125 mΩ. It features low gate charge (Q_g = 17.16 nC), fast switching (t_f = 9.4 ns), and integrated body diode (V_SD = 0.85 V). It is qualified to AEC-Q101 and used in DC-DC converters and motor control power stages.

For engineers reviewing the ZXMN10A25K datasheet, ZXMN10A25K pinout, ZXMN10A25K application, or ZXMN10A25K equivalent, key selection criteria include its 100V V_DS, 125 mΩ R_DS(on) at 10V drive, TO252 thermal performance (R_θJA = 29.4 °C/W on 50 mm × 50 mm PCB), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This MOSFET operates as a unidirectional high-side or low-side switch in hard-switched topologies. Its V_GS(th) range (2.0–4.0 V) enables compatibility with 3.3 V and 5 V logic-level gate drivers, while its low C_iss (859 pF) and C_rss (33 pF) support efficient high-frequency operation up to several hundred kHz.

The device integrates a robust body diode with t_rr = 40.5 ns and Q_rr = 62 nC, enabling synchronous rectification and freewheeling in buck and half-bridge configurations. Thermal design is supported by R_θJL = 1.43 °C/W, allowing direct heat transfer from junction to PCB drain pad.

Key Specifications

Pinout & Package

Package: TO252 (DPAK), surface-mount, single-sided 2 oz copper compatible, with exposed drain pad for thermal dissipation. Dimensions per DS33569 Rev. 3–2: D = 6.10 mm, E = 6.58 mm, H = 9.91 mm, L = 1.59 mm, b3 = 5.33 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Compared with DMN10H120SFD and IPD10N10S3L, ZXMN10A25K offers balanced trade-offs: moderate R_DS(on), fast switching, and AEC-Q101 qualification-making it optimal for 100–500 kHz automotive and industrial power stages where both efficiency and reliability are prioritized.

Availability

ZXMN10A25K is available at Aetrix Electronics and suitable for DC-DC converters, motor control systems, and automotive body electronics requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant performance.

Supply support for ZXMN10A25K includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

ZXMN10A25K belongs to Diodes' ZXMN series of medium-voltage TrenchMOS™ power MOSFETs, engineered for high-efficiency, compact power conversion in automotive, industrial, and computing applications.

FAQ

Is ZXMN10A25K suitable for 3.3 V logic-level gate drive?

No. Its V_GS(th) range is 2.0–4.0 V, and R_DS(on) is specified only at V_GS = 6 V and 10 V (150 mΩ and 125 mΩ respectively). At 3.3 V, it remains partially enhanced with significantly higher on-resistance-unsuitable for efficient switching. A true logic-level MOSFET like IPD10N10S3L is recommended for 3.3 V drive.

What is the maximum safe operating area (SOA) limitation at 100 V drain-source voltage?

At V_DS = 100 V, the SOA curve (DS33569 pg. 3) limits continuous DC current to ≤1.2 A for a 50 mm × 50 mm 2 oz FR4 PCB. This is governed by thermal limits (P_D = 4.25 W) and second breakdown constraints-not just R_DS(on). Pulse operation allows higher currents (e.g., 21 A pulsed) within safe transient thermal boundaries.

Does ZXMN10A25K have avalanche rating?

No. The datasheet does not specify rated unclamped inductive switching (UIS) energy or avalanche ruggedness. It is not characterized or guaranteed for repetitive avalanche operation. Designers must avoid operation beyond the SOA boundary and implement external clamping or snubbing if inductive loads are present.

How is the TO252 drain pad thermally connected in layout?

The TO252 package exposes the drain (D) terminal on the underside as a large copper pad (b3 = 5.33 mm wide). For optimal thermal performance, this pad must be soldered directly to a minimum 50 mm² copper pour on the PCB's top layer, connected via ≥4 thermal vias (0.3 mm diameter) to an internal or bottom-layer ground/power plane-per the 50 mm × 50 mm 2 oz FR4 test condition in the datasheet.