Diodes Incorporated ZXMN10A25KTC

Overview

ZXMN10A25KTC from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in TO252 (DPAK) package, rated for 6.4A continuous drain current at V_GS = 10V, with R_DS(on) = 125 mΩ. It features low gate charge (Q_g = 17.16 nC), fast switching (t_f = 9.4 ns), and AEC-Q101 qualification-designed for high-efficiency DC-DC converters and motor control power stages.

For engineers reviewing the ZXMN10A25KTC datasheet, ZXMN10A25KTC pinout, ZXMN10A25KTC application, or ZXMN10A25KTC equivalent, key selection criteria include its 100V V_DS, 125 mΩ R_DS(on) at 10V drive, TO252 thermal performance (R_θJA = 29.4°C/W on 50mm × 50mm 2oz FR4), body diode recovery (t_rr = 40.5 ns), and automotive-grade reliability per AEC-Q101.

Technical Context

This MOSFET operates as a unidirectional high-side or low-side switch in hard-switched topologies. Its 2.0–4.0V gate threshold enables compatibility with 3.3V and 5V logic-level drivers, while its 17.16 nC total gate charge supports efficient 100–500 kHz switching in synchronous buck regulators.

The integrated body diode exhibits 0.85–0.95V forward voltage at 3.2A and 40.5 ns reverse recovery time-critical for minimizing shoot-through loss and EMI in half-bridge configurations. Thermal design leverages the TO252 package's 1.43°C/W junction-to-lead resistance for direct PCB copper thermal spreading.

Key Specifications

Pinout & Package

Package: TO252 (DPAK), surface-mount, single-gauge leadframe with matte tin finish; 0.33 g mass; UL 94V-0 molded plastic case.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMN10H120SFD-13 and IPD10N10S3-13, ZXMN10A25KTC delivers balanced conduction–switching trade-off, AEC-Q101 compliance, and proven TO252 thermal robustness-making it optimal for cost-sensitive, thermally constrained automotive and industrial power stages where reliability and layout simplicity are prioritized.

Availability

ZXMN10A25KTC is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and power disconnect switches requiring stable component supply, automotive-grade qualification, and TO252 thermal performance.

Supply support for ZXMN10A25KTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, automotive, and consumer markets.

ZXMN10A25KTC belongs to Diodes' ZXMN series of low-R_DS(on) N-channel MOSFETs engineered specifically for high-efficiency, medium-voltage power conversion in space- and thermal-constrained applications.

FAQ

What is the maximum continuous drain current for ZXMN10A25KTC at +70°C ambient?

The maximum continuous drain current is 5.0 A at T_A = +70°C when mounted on a 50 mm × 50 mm × 1.6 mm FR4 PCB with 2 oz copper, per Note 7 in the datasheet. This derating reflects thermal limits under steady-state conditions-not pulse or transient ratings.

Does ZXMN10A25KTC include an integrated body diode, and what are its key parameters?

Yes, it features an intrinsic body diode with forward voltage V_SD = 0.85–0.95 V at I_S = 3.2 A and T_J = +25°C, and reverse recovery time t_rr = 40.5 ns at dI/dt = 100 A/µs. These values are measured with V_GS = 0 V and are critical for synchronous rectifier and half-bridge designs.

Is ZXMN10A25KTC suitable for use with 3.3V logic-level gate drivers?

Yes-its gate threshold voltage V_GS(th) ranges from 2.0 V to 4.0 V, enabling reliable turn-on with 3.3V CMOS outputs. However, full R_DS(on) specification (125 mΩ) requires 10V drive; at 3.3V, conduction loss increases significantly and must be verified per application current and thermal constraints.

How does the TO252 package of ZXMN10A25KTC compare thermally to TO220 or SO-8 alternatives?

ZXMN10A25KTC's TO252 offers R_θJA = 29.4°C/W on 50 mm × 50 mm 2 oz FR4-superior to SO-8 (typically >60°C/W) and competitive with TO220 (≈35–45°C/W) while maintaining surface-mount compatibility. Its R_θJL = 1.43°C/W enables direct thermal transfer to PCB copper, unlike insulated TO220 variants.