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Diodes Incorporated ZXMN2A02N8TA

Part No.:
ZXMN2A02N8TA
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixZXMN2A02N8TA.pdf
Description:
MOSFET N-CH 20V 8.3A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:121

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Product details

Overview

ZXMN2A02N8TA from Diodes Incorporated (formerly Zetex Semiconductors) is a 20V N-channel enhancement-mode Trench MOSFET in SOIC-8 package, optimized for low-voltage power switching with RDS(on) = 20 mΩ at VGS = 4.5 V and ID = 11 A. It delivers fast switching (tr = 10 ns, Qg = 18.9 nC), low gate threshold (VGS(th) = 0.7 V), and integrated body diode (VSD = 0.85 V), enabling high-efficiency motor control and load disconnect circuits.

For engineers reviewing the ZXMN2A02N8TA datasheet, ZXMN2A02N8TA pinout, ZXMN2A02N8TA application, or ZXMN2A02N8TA equivalent, key selection criteria include its 20 mΩ on-resistance at 4.5 V gate drive, SOIC-8 thermal performance (RθJA = 50 °C/W with PCB copper), 50 A pulsed drain rating, and suitability for 3.3 V/5 V logic-level gate interfacing in compact DC-DC and battery-powered systems.

Technical Context

This MOSFET employs Zetex's proprietary Trench structure to simultaneously minimize conduction loss and switching loss-achieving RDS(on) = 20 mΩ and Ciss = 1900 pF at VDS = 10 V. Its low VGS(th) (0.7 V typ.) ensures reliable turn-on with 3.3 V microcontroller outputs.

The device integrates a robust body diode with trr = 16.3 ns and Qrr = 7.8 nC, supporting synchronous rectification and bidirectional current handling in H-bridge motor drivers without external diodes.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS20 V - Maximum blocking voltage for 3.3 V/5 V rail applications
RDS(on)20 mΩ @ VGS = 4.5 V, ID = 11 A - Enables <1 W conduction loss at 7 A continuous
Qg18.9 nC - Low gate charge supports efficient 1–2 MHz PWM switching with minimal driver loss
tr/tf10 ns / 13.6 ns - Fast edge rates reduce switching transition time and EMI generation
VGS(th)0.7 V (typ.) - Ensures full enhancement with standard 3.3 V GPIO without level-shifting
RθJA50 °C/W - Achievable with 25 mm × 25 mm 1 oz Cu FR4; enables 2.5 W dissipation at +70 °C ambient
ID (cont)8.2 A @ TA = 70 °C - Real-world continuous current rating for thermally constrained PCB layouts

Pinout & Package

Package: SOIC-8 (standard 1.27 mm pitch, 5.0 mm × 4.0 mm footprint, 1.75 mm max height). Pin 1 marked by notch or dot; pins numbered counterclockwise from top-left corner when viewed top-down.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4Source (S)Four parallel source terminals - reduces bond-wire inductance and improves current sharing in high-di/dt loads
5, 6, 7, 8Drain (D)Four parallel drain terminals - enhances thermal conduction to PCB copper pour and lowers RDS(on) effective resistance
Gate (G)Control inputSingle gate terminal (Pin 1 not gate); requires <19 nC charge for full enhancement - compatible with low-power MCU GPIO

Key Features

FeatureDesign Value
Logic-level gate driveTurns fully on with 3.3 V supply - eliminates need for gate driver IC in microcontroller-based systems
Low-profile SOIC-81.75 mm max height - fits under 2 mm mechanical clearance constraints in portable electronics
Trench process architectureSimultaneously optimizes RDS(on) and Qg - achieves 20 mΩ/18.9 nC ratio superior to planar MOSFETs of same voltage class
Integrated body diodeVSD = 0.85 V @ 11.5 A - supports freewheeling in half-bridge motor drives without external Schottky
High pulsed current capabilityIDM = 50 A - handles short-circuit transients and motor stall currents without failure

Applications

Brushed DC Motor ControlBattery-Powered Load Switch

Use Scenario: Bidirectional 12 V brushed motor control in cordless power tools using H-bridge topology.

IC Role / Device Role / Timing Role: Low-side and high-side switch in dual half-bridge configuration; body diode enables regenerative braking.

Use Value: 20 mΩ RDS(on) limits I²R loss to <1.0 W at 7 A, extending battery runtime; fast tr/tf minimizes shoot-through risk during PWM commutation.

Use Scenario: Controlled 5 V system power-up/down sequencing in IoT sensor nodes with Li-ion backup.

IC Role / Device Role / Timing Role: High-side load switch enabling soft-start and reverse-polarity protection via external resistor network.

Use Value: 0.7 V VGS(th) allows direct MCU GPIO control; SOIC-8 footprint simplifies layout while supporting 8.2 A continuous load current at 70 °C ambient.

USB-C Power Delivery SinkIndustrial PLC Output Module

Use Scenario: 5 V/3 A USB-C sink path switching with overcurrent and thermal foldback.

IC Role / Device Role / Timing Role: Main pass transistor in programmable current-limit circuit; gate driven by op-amp feedback loop.

Use Value: Low Qg (18.9 nC) enables stable closed-loop bandwidth >100 kHz; RDS(on) tolerance supports ±10% current accuracy across temperature.

Use Scenario: 24 V DC output stage for industrial digital output modules driving solenoids and relays.

IC Role / Device Role / Timing Role: Low-side switching element with integrated flyback diode handling inductive kickback.

Use Value: Body diode trr = 16.3 ns prevents voltage overshoot >40 V during 100 A/μs turn-off; SOIC-8 thermal design supports 2.5 W dissipation in DIN-rail enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN2020LSD-13RDS(on) = 22 mΩ @ 4.5 V; Qg = 16.5 nC; SO-8 packageSlightly higher on-resistance but lower gate charge - better for ultra-high-frequency (>5 MHz) switchingSelect if gate drive strength is limited and switching frequency exceeds 2 MHz
SI2302DS-T1-GE3RDS(on) = 35 mΩ @ 4.5 V; SOT-23 package; ID = 2.6 A (TA = 70 °C)Lower current rating and higher RDS(on); surface-mount compatible but thermally limitedSelect only for space-constrained <3 A loads where SOIC-8 footprint is unavailable

Compared with DMN2020LSD-13 and SI2302DS-T1-GE3, ZXMN2A02N8TA offers the best balance of low RDS(on), high current capability (8.2 A), and SOIC-8 thermal performance-making it optimal for medium-power motor and load-switch designs requiring reliability and manufacturability.

Availability

ZXMN2A02N8TA is available at Aetrix Electronics and suitable for brushed DC motor control, battery-powered load switching, USB-C power delivery sink stages, and industrial PLC output modules requiring stable component supply and long-term production continuity.

Supply support for ZXMN2A02N8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its legacy of high-performance analog and discrete semiconductors, certified to ISO 9001 and IATF 16949 standards.

ZXMN2A02N8TA belongs to Zetex's TrenchMOS® logic-level power MOSFET product line, engineered specifically for high-efficiency, low-voltage DC-DC conversion, motor drive, and load management in portable, industrial, and automotive-qualified systems.

FAQ

Is ZXMN2A02N8TA suitable for 3.3 V microcontroller gate drive?

Yes. With a typical gate threshold voltage of 0.7 V and guaranteed turn-on at VGS ≥ 2.5 V, ZXMN2A02N8TA fully enhances using standard 3.3 V GPIO outputs. Its 18.9 nC total gate charge ensures fast switching without requiring external gate drivers in most low-to-medium frequency applications.

What is the maximum continuous drain current at 85 °C ambient?

At TA = 85 °C, the device supports approximately 6.5 A continuous drain current. This is derived from the 50 °C/W thermal resistance and 150 °C maximum junction temperature: PD = (150 − 85) / 50 = 1.3 W; ID = √(PD / RDS(on)) = √(1.3 / 0.02) ≈ 6.5 A, assuming worst-case RDS(on) = 20 mΩ.

Does ZXMN2A02N8TA have avalanche rating?

No. The datasheet does not specify unclamped inductive switching (UIS) or single-pulse avalanche energy rating. Designers must implement external clamping (e.g., TVS or RC snubber) when switching inductive loads to prevent voltage overshoot beyond the 20 V VDSS limit.

Can the SOIC-8 package be hand-soldered reliably?

Yes. The SOIC-8 footprint is compatible with standard reflow profiles and manual soldering using fine-tip irons and flux. Key considerations include preheating the board to avoid thermal shock, limiting iron dwell time per pad to <3 seconds, and verifying solder joint integrity with magnification due to the four-source/four-drain internal paralleling structure.

ZXMN2A02N8TA Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Rds On (Max) @ Id, Vgs:
20mOhm @ 11A, 4.5V
Vgs(th) (Max) @ Id:
700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:
18.9 nC @ 4.5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
1900 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
1.56W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

ZXMN2A02N8TA FAQ

1.How can I place an order for ZXMN2A02N8TA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMN2A02N8TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMN2A02N8TA reliable?

The price and inventory of ZXMN2A02N8TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMN2A02N8TA is usually 5 days.

3.What payment methods are accepted for ZXMN2A02N8TA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMN2A02N8TA transactions.

Note: Certain payment methods may incur a processing fee.

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ZXMN2A02N8TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMN2A02N8TA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMN2A02N8TA?

For technical support, including ZXMN2A02N8TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMN2A02N8TA requirements.

6.How does Aetrix verify that ZXMN2A02N8TA is sourced from the original manufacturer or authorized distributors?

All ZXMN2A02N8TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMN2A02N8TA meets industry standards.

7.What is the process for return or replacement of ZXMN2A02N8TA?

All ZXMN2A02N8TA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMN2A02N8TA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMN2A02N8TA part is unused and in its original packaging.

Return procedure for ZXMN2A02N8TA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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