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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZXMN2A02X8TA

Name: ZXMN2A02X8TA
Brand: Diodes Incorporated
SKU: ZXMN2A02X8TA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXMN2A02X8TA

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Datasheet:: ZXMN2A02X8TA.pdf

Description:: MOSFET N-CH 20V 6.2A 8MSOP

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Product details

Overview

ZXMN2A02X8TA from Diodes Incorporated (formerly Zetex) is a 20V N-channel enhancement-mode Trench MOSFET in an MSOP-8 package, with R_DS(on) = 0.02 Ω at V_GS = 4.5V and I_D = 11A, 7.8A continuous drain current at T_A = 25°C, and fast switching (t_d(on) = 7.9 ns, Q_g = 18.6 nC), used in low-voltage DC–DC converters and power management disconnect switches.

For engineers reviewing the ZXMN2A02X8TA datasheet, ZXMN2A02X8TA pinout, ZXMN2A02X8TA application, or ZXMN2A02X8TA equivalent, key selection criteria include its 20V V_DS, low-threshold operation (V_GS(th) = 0.7V typ), SOIC-compatible MSOP-8 footprint, thermal resistance (R_θJA = 74.5°C/W on FR4), and body diode recovery (t_rr = 16.3 ns).

Technical Context

This MOSFET employs a Trench process to achieve low R_DS(on) and high transconductance (g_fs = 27 S), enabling efficient synchronous rectification in buck converters operating below 20V input. Its gate threshold voltage (0.7V min) supports direct logic-level drive from 1.8V/3.3V controllers.

Dynamic parameters-including C_iss = 1900 pF, C_oss = 356 pF, and Q_gd/Q_gs ratio of ~0.94-indicate optimized switching behavior for high-frequency (>1 MHz) power stages, while the integrated source-drain diode (V_SD = 0.85V at 11.5A) supports bidirectional current handling in H-bridge motor control.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage for 12V-input systems and USB PD power paths
R_DS(on)	0.02 Ω @ V_GS = 4.5V, I_D = 11A - Enables <150 mW conduction loss at 7.8A continuous load
I_D (cont)	7.8 A @ T_A = 25°C - Supports compact 5–10W point-of-load regulators without heatsink
Q_g	18.6 nC @ V_DS = 10V - Compatible with low-current gate drivers (e.g., 100 mA peak)
t_r/t_f	10 ns / 13.6 ns - Allows clean 2–5 MHz switching with minimal overlap loss
V_GS(th)	0.7 V (min) - Ensures full enhancement with 1.8V GPIO or low-V_CC microcontrollers
t_rr	16.3 ns - Reduces reverse recovery loss in synchronous rectifier mode

Pinout & Package

MSOP-8 (Mini Small Outline Package), 3.0 × 3.0 mm body, 0.65 mm pitch, exposed drain pad for thermal enhancement. Pin 1 marked by dot; pins 1–4 on left side, 5–8 on right (top view).

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; low input capacitance (C_iss = 1900 pF) minimizes driver loading
2 (S)	Source	Reference node for gate drive; tied to power ground in low-side switch configuration
3 (S)	Source	Parallel source connection improves current sharing and reduces bond wire inductance
4 (S)	Source	Third source terminal; enhances thermal path to PCB copper when soldered
5 (D)	Drain	Main power output node; connected to exposed pad for 74.5°C/W R_θJA
6 (D)	Drain	Second drain terminal; distributes current across internal die connections
7 (D)	Drain	Third drain terminal; supports high pulsed current (I_DM = 39 A)
8 (D)	Drain	Fourth drain terminal; ties to exposed thermal pad for optimal heat dissipation

Key Features

Feature	Design Value
Trench MOSFET architecture	Delivers 0.02 Ω R_DS(on) at 4.5V drive while maintaining robust 20V breakdown margin
Low gate threshold (0.7V min)	Enables direct interface with 1.8V/2.5V logic without level-shifting circuitry
Optimized charge ratios (Q_gd/Q_g = 26%)	Reduces Miller-induced shoot-through risk in half-bridge configurations
Integrated body diode with t_rr = 16.3 ns	Supports synchronous rectification in buck converters up to 2 MHz
MSOP-8 with exposed drain pad	Provides 30% lower R_θJA vs. standard SOIC-8, enabling higher power density

Applications

DC–DC Buck Converters

USB Power Delivery Switches

Use Scenario: Step-down regulation from 12V/5V input to 3.3V/1.8V rails in portable SSDs and IoT edge nodes.

IC Role / Device Role: Low-side synchronous rectifier MOSFET in integrated buck controller IC reference designs.

Use Value: 0.02 Ω R_DS(on) cuts conduction loss by >40% vs. comparable 30mΩ devices, extending battery runtime.

Use Scenario: Input protection and hot-swap control in USB-C power inlet circuits with 5–20V input range.

IC Role / Device Role: Load switch enabling controlled inrush current and reverse polarity protection.

Use Value: 0.7V V_GS(th) allows direct enable from USB PD controller's 3.3V GPIO, eliminating external bias circuitry.

Motor Driver Half-Bridges

Power Management Disconnect Switches

Use Scenario: Bidirectional 12V brushed DC motor control in medical pumps and precision actuators.

IC Role / Device Role: Low-side switch in dual-MOSFET H-bridge with integrated body diode commutation.

Use Value: 16.3 ns t_rr limits flyback energy loss during PWM dead-time, reducing MOSFET heating by ~12%.

Use Scenario: System-level power domain isolation in industrial PLC modules during firmware update or fault recovery.

IC Role / Device Role: High-current (7.8A) main power disconnect switch controlled by microcontroller GPIO.

Use Value: MSOP-8 footprint saves >50% board area vs. SO-8 alternatives while sustaining full rated current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage power switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025LSS	R_DS(on) = 0.03 Ω @ 4.5V; V_DS = 30V; SOP-8 package	Higher voltage rating suits 24V systems but increases gate charge (Q_g = 24 nC)	Select when 30V blocking is required and board space permits larger SOP-8 footprint
SI2302DS-T1-GE3	R_DS(on) = 0.055 Ω @ 4.5V; V_DS = 20V; SOT-23-3 package; I_D = 2.6A	Lower current rating and no multi-pin source/drain layout limits thermal performance	Choose only for space-constrained <2A loads where MSOP-8 is not feasible

Compared with DMN3025LSS and SI2302DS-T1-GE3, ZXMN2A02X8TA delivers superior current density (7.8A in MSOP-8), lowest R_DS(on), and fastest switching-making it optimal for thermally constrained, high-efficiency 12V/5V power stages where layout area and conduction loss are critical.

Availability

ZXMN2A02X8TA is available at Aetrix Electronics and suitable for DC–DC converters, USB power delivery switches, motor control H-bridges, and power management disconnect switches requiring stable component supply and long-term industrial availability.

Supply support for ZXMN2A02X8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its high-performance analog and power portfolio, focusing on reliability, efficiency, and miniaturization for industrial and consumer applications.

ZXMN2A02X8TA belongs to Zetex's TrenchMOS® power transistor family, engineered specifically for high-efficiency, low-voltage power conversion and load switching where low R_DS(on), fast switching, and compact packaging are essential.

FAQ

Is ZXMN2A02X8TA suitable for 3.3V gate drive?

Yes. With a minimum gate threshold voltage of 0.7V and guaranteed R_DS(on) = 0.04 Ω at V_GS = 2.5V, this MOSFET fully enhances using standard 3.3V logic outputs. It delivers 8.4A drain current under those conditions, making it ideal for microcontroller-driven power switches without level shifters.

What is the thermal performance on a standard PCB?

When mounted on a 25 mm × 25 mm FR4 board with 1 oz copper on one side, ZXMN2A02X8TA achieves R_θJA = 74.5°C/W. This allows 1.67 W power dissipation at 25°C ambient, supporting 7.8A continuous current with ≤50°C junction rise-provided the exposed drain pad is fully soldered to copper pour.

Does it have avalanche ruggedness rating?

No. The datasheet does not specify EAS (single-pulse avalanche energy) or repetitive avalanche ratings. Designers must ensure operating conditions stay within Safe Operating Area (SOA) limits shown in Figure 1-particularly avoiding simultaneous high V_DS and high I_D during transient events without external clamping.

Can it replace SO-8 MOSFETs in existing layouts?

No. ZXMN2A02X8TA uses MSOP-8 (3.0 × 3.0 mm, 0.65 mm pitch), which is physically smaller and incompatible with SO-8 (4.9 × 6.0 mm, 1.27 mm pitch) footprints. Layout redesign is required-but the smaller size enables denser power stage integration and improved thermal coupling to PCB copper.

ZXMN2A02X8TA Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 6.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 11A, 4.5V

Vgs(th) (Max) @ Id:: 700mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 18.6 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1900 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-MSOP

ZXMN2A02X8TA FAQ

1.How can I place an order for ZXMN2A02X8TA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMN2A02X8TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMN2A02X8TA reliable?

The price and inventory of ZXMN2A02X8TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMN2A02X8TA is usually 5 days.

3.What payment methods are accepted for ZXMN2A02X8TA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMN2A02X8TA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXMN2A02X8TA?

ZXMN2A02X8TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMN2A02X8TA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMN2A02X8TA?

For technical support, including ZXMN2A02X8TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMN2A02X8TA requirements.

6.How does Aetrix verify that ZXMN2A02X8TA is sourced from the original manufacturer or authorized distributors?

All ZXMN2A02X8TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMN2A02X8TA meets industry standards.

7.What is the process for return or replacement of ZXMN2A02X8TA?

All ZXMN2A02X8TA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMN2A02X8TA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMN2A02X8TA part is unused and in its original packaging.

Return procedure for ZXMN2A02X8TA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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