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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZXMN2A02X8TC

Name: ZXMN2A02X8TC
Brand: Diodes Incorporated
SKU: ZXMN2A02X8TC
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXMN2A02X8TC

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Datasheet:: ZXMN2A02X8TC.pdf

Description:: MOSFET N-CH 20V 6.2A 8MSOP

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Product details

Overview

ZXMN2A02X8TC from Diodes Incorporated (formerly Zetex) is a 20V N-channel enhancement-mode Trench MOSFET in an MSOP-8 package, with R_DS(on) = 0.02 Ω at V_GS = 4.5V and I_D = 11A, 7.8A continuous drain current at T_A = 25°C, and fast switching (t_r = 10 ns, t_f = 13.6 ns), optimized for low-voltage DC–DC converters and power management disconnect switches.

For engineers reviewing the ZXMN2A02X8TC datasheet, ZXMN2A02X8TC pinout, ZXMN2A02X8TC application, or ZXMN2A02X8TC equivalent, key selection criteria include its 20V V_DS, 0.02 Ω on-resistance at 4.5V gate drive, SOIC-compatible MSOP-8 thermal performance (R_θJA = 74.5 °C/W), and body diode recovery (t_rr = 16.3 ns, Q_rr = 7.8 nC).

Technical Context

This MOSFET employs a proprietary Trench structure to simultaneously minimize conduction loss and switching loss-enabling high-efficiency operation in synchronous buck stages and load-switching circuits where gate drive voltage is constrained to 3.3V or 4.5V logic levels.

Its low 0.7V gate threshold (V_GS(th) min = 0.7V) ensures reliable turn-on with standard logic-level drivers, while dynamic parameters-including C_iss = 1900 pF, C_oss = 356 pF, and Q_g = 18.6 nC-support stable PWM control up to several MHz in compact power supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage for 12V-input systems and USB PD power paths
R_DS(on)	0.02 Ω @ V_GS = 4.5V, I_D = 11A - Enables <100 mW conduction loss at 7A load
I_D (cont)	7.8 A @ T_A = 25°C - Sustains typical single-phase buck converter output currents
t_r/t_f	10 ns / 13.6 ns - Supports >1 MHz switching without excessive gate drive loss
Q_g	18.6 nC - Matches standard 3.3V/4.5V PWM controller gate driver capability
V_GS(th)	0.7 V (min) - Ensures full enhancement with 1.8V–3.3V logic-level signals
t_rr/Q_rr	16.3 ns / 7.8 nC - Limits reverse-recovery energy in synchronous rectification

Pinout & Package

MSOP-8 (Mini Small Outline Package), 3.0 mm × 3.0 mm footprint, 0.65 mm pitch, 0.7 mm max height, designed for high-density PCB layouts with improved thermal dissipation over standard SOIC-8.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 0.7–20 V logic-level drive; requires ≤18.6 nC charge for full turn-on
2 (S)	Source	Reference node for gate drive and current return path; tied to power ground in low-side switch
3 (D)	Drain	Main current path output; connects to input rail in high-side configuration or output node in low-side
4 (S)	Source	Parallel source connection for reduced package inductance and enhanced current sharing
5 (S)	Source	Additional source terminal-electrically common with Pins 2 and 4-to improve thermal and electrical grounding
6 (D)	Drain	Second drain terminal for lower R_DS(on) and reduced thermal resistance via dual-drain layout
7 (D)	Drain	Third drain terminal-common with Pins 3 and 6-to distribute high-current paths across package
8 (D)	Drain	Fourth drain terminal completing quad-drain configuration for minimal voltage drop under 7.8A DC load

Key Features

Feature	Design Value
Low R_DS(on) at 4.5V	0.02 Ω enables <100 mW conduction loss at 7A in 12V input converters
Logic-level gate threshold	0.7 V minimum ensures compatibility with 1.8V/3.3V microcontroller GPIOs
Fast switching with low Q_g	18.6 nC total gate charge supports efficient 1–2 MHz PWM without external driver
Enhanced thermal performance	R_θJA = 74.5 °C/W (FR4 PCB) allows 1.67 W dissipation at 25°C ambient
Optimized body diode	16.3 ns t_rr and 7.8 nC Q_rr reduce shoot-through risk in synchronous rectifiers

Applications

DC–DC Buck Converters

Load Disconnect Switches

Use Scenario: Step-down conversion from 12V to 3.3V/5V in embedded power rails.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in integrated buck controller IC reference designs.

Use Value: 0.02 Ω R_DS(on) reduces conduction loss by >40% vs. comparable 30 mΩ devices at 5A load.

Use Scenario: Controlled hot-swap and inrush limiting for USB-C power delivery modules.

IC Role / Device Role / Timing Role: High-side load switch enabling controlled power-up sequencing of downstream peripherals.

Use Value: 0.7 V V_GS(th) permits direct drive from 1.8V system controllers without level-shifting.

Motor Driver Half-Bridges

Power Management ICs (PMIC) Integration

Use Scenario: Low-voltage brushed DC motor control in portable medical pumps and robotics.

IC Role / Device Role / Timing Role: Bottom-FET in discrete H-bridge stage operating at 20 kHz PWM frequency.

Use Value: 10 ns rise time and 13.6 ns fall time minimize dead-time losses and EMI generation.

Use Scenario: Integrated power stage for multi-rail PMICs supplying FPGA core, I/O, and auxiliary voltages.

IC Role / Device Role / Timing Role: Discrete external switch augmenting internal PMIC FETs for higher current capability.

Use Value: MSOP-8 footprint matches PMIC layout constraints while delivering 7.8A continuous current per channel.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025LSS	30V V_DS, 0.025 Ω R_DS(on) @ 4.5V, SO-8 package, higher R_θJA (113 °C/W)	Higher voltage margin but larger footprint and worse thermal performance on FR4	Preferred when 30V rating is required and board space allows SO-8
AO3400	30V V_DS, 0.028 Ω R_DS(on) @ 10V, SOT-23-3 package, no multi-pin source/drain layout	Limited to ≤5.7A continuous; unsuitable for high-current synchronous rectification	Only suitable for low-power load switches where current <4A and size is critical

Compared with DMN3025LSS and AO3400, ZXMN2A02X8TC delivers superior thermal efficiency (74.5 °C/W), higher current density (7.8A in MSOP-8), and optimized 4.5V drive-making it uniquely suited for space-constrained, high-efficiency 12V-to-low-voltage DC–DC stages.

Availability

ZXMN2A02X8TC is available at Aetrix Electronics and suitable for DC–DC converters, load disconnect switches, motor control stages, and PMIC augmentation requiring stable component supply and consistent parametric performance across production batches.

Supply support for ZXMN2A02X8TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its portfolio of high-performance analog and discrete semiconductors for power management, signal integrity, and protection.

This device belongs to Zetex's TrenchMOS® logic-level power MOSFET product line, engineered specifically for high-efficiency, low-voltage switching in space-constrained portable and embedded power systems.

FAQ

Is ZXMN2A02X8TC suitable for 3.3V gate drive applications?

Yes. With a minimum gate threshold voltage of 0.7 V and guaranteed R_DS(on) = 0.04 Ω at V_GS = 2.5V, this MOSFET fully enhances using standard 3.3V logic outputs. Its low Q_g (18.6 nC) also ensures fast switching without external gate drivers in most 3.3V-controlled topologies.

What is the maximum continuous drain current at 70°C ambient?

At T_A = 70°C, the continuous drain current is rated at 6.3 A (V_GS = 10V) and 6.2 A (V_GS = 10V, condition b). Derating follows 13.4 mW/°C above 25°C ambient when mounted on FR4 with 1 oz copper, based on R_θJA = 74.5 °C/W.

Does ZXMN2A02X8TC include an integrated body diode?

Yes. It features a monolithic source-drain body diode with forward voltage V_SD = 0.85–0.95 V at I_S = 11.5A and T_J = 25°C, plus characterized reverse recovery (t_rr = 16.3 ns, Q_rr = 7.8 nC), enabling use in synchronous rectification and freewheeling paths.

Why is ZXMN2A02X8TC marked "Not Recommended for New Design"?

This designation reflects Diodes Incorporated's product lifecycle guidance: while fully functional and supported, newer alternatives like DMN3025LSS offer improved voltage rating and packaging. ZXMN2A02X8TC remains viable for legacy designs, cost-sensitive production, or applications where its 20V rating and MSOP-8 footprint are optimal.

ZXMN2A02X8TC Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 6.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 11A, 4.5V

Vgs(th) (Max) @ Id:: 700mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 18.6 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1900 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-MSOP

ZXMN2A02X8TC FAQ

1.How can I place an order for ZXMN2A02X8TC through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMN2A02X8TC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMN2A02X8TC reliable?

The price and inventory of ZXMN2A02X8TC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMN2A02X8TC is usually 5 days.

3.What payment methods are accepted for ZXMN2A02X8TC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMN2A02X8TC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXMN2A02X8TC?

ZXMN2A02X8TC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMN2A02X8TC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMN2A02X8TC?

For technical support, including ZXMN2A02X8TC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMN2A02X8TC requirements.

6.How does Aetrix verify that ZXMN2A02X8TC is sourced from the original manufacturer or authorized distributors?

All ZXMN2A02X8TC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMN2A02X8TC meets industry standards.

7.What is the process for return or replacement of ZXMN2A02X8TC?

All ZXMN2A02X8TC units undergo pre-shipment inspection (PSI). If there is an issue with ZXMN2A02X8TC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMN2A02X8TC part is unused and in its original packaging.

Return procedure for ZXMN2A02X8TC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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