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Diodes Incorporated ZXMN2A03E6TC
- Part No.:
- ZXMN2A03E6TC
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6
- Datasheet:
-
ZXMN2A03E6TC.pdf
- Description:
- MOSFET N-CH 20V 3.7A SOT23-6
- Quantity:
- Payment:
- Shipping:
Inventory:5,004
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Product details
Overview
ZXMN2A03E6TC from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in SOT26 package, featuring 55 mΩ RDS(ON) at VGS = 4.5V, 4.6A continuous drain current at TA = +25°C, and fast switching with 4.7 ns turn-on delay. It serves as a high-efficiency synchronous rectifier or load switch in compact DC-DC converters.
For engineers reviewing the ZXMN2A03E6TC datasheet, ZXMN2A03E6TC pinout, ZXMN2A03E6TC application, or ZXMN2A03E6TC equivalent, key selection criteria include its low 2.5V-threshold gate drive compatibility, 837 pF input capacitance for gate driver sizing, body diode reverse recovery time of 12 ns, and thermal resistance of 70 °C/W under pulsed conditions.
Technical Context
This MOSFET employs planar trench-enhanced silicon technology to achieve low on-resistance while maintaining controlled gate charge (Qg = 8.2 nC) and low output capacitance (Coss = 168 pF), enabling efficient operation in 3–5 V input buck converters. Its 0.7 V gate threshold voltage ensures reliable turn-on with logic-level drivers.
The integrated body diode exhibits 0.85 V forward voltage at 4.1 A and 12 ns reverse recovery time, supporting synchronous rectification without external Schottky diodes. Thermal design is enabled by 70 °C/W RθJA on FR-4 PCB with pulsed testing conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum blocking voltage for 3.3 V/5 V rail applications |
| RDS(ON) | 55 mΩ @ VGS = 4.5V - Enables <120 mW conduction loss at 4.6 A |
| ID (continuous) | 4.6 A @ TA = +25°C - Supports mid-power point-of-load conversion |
| Qg | 8.2 nC - Determines gate driver current requirement (~1.6 mA avg for 500 kHz) |
| Ciss | 837 pF - Sets Miller plateau duration and influences EMI filter design |
| tRR | 12 ns - Reduces body diode conduction loss and enables hard-switched sync rectification |
| RθJA | 70 °C/W (pulsed) - Allows ~1.7 W dissipation before junction exceeds 150 °C |
Pinout & Package
SOT26 surface-mount package with 6-pin configuration, molded green plastic housing (UL 94V-0), 0.018 g mass, and tin-finished copper leadframe. Moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Power return path for channel current | Internally connected to exposed pad; primary thermal path to PCB copper |
| 2 (Gate) | Control terminal for channel modulation | Low-input-capacitance node requiring <10 Ω series resistance to damp ringing |
| 3 (Drain) | Main power output terminal | High-side switch node; connects to inductor or load; carries full switched current |
| 4 (Source) | Redundant source connection | Parallel path to Pin 1; improves current sharing and thermal spreading |
| 5 (Drain) | Redundant drain connection | Parallel path to Pin 3; reduces package inductance in high-di/dt switching |
| 6 (Gate) | Secondary gate terminal | Provides low-inductance gate loop closure; used with Pin 2 for Kelvin gate drive |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | 0.7 V VGS(TH) enables direct interface with 2.5 V/3.3 V microcontrollers |
| Low Qgd/Qg ratio | 2.0/8.2 = 0.24 - Improves hard-switching efficiency and reduces voltage overshoot |
| Green compound packaging | Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb) per Diodes Inc. definition |
| Fast body diode | 12 ns tRR, 4.9 nC QRR - Minimizes reverse recovery loss in synchronous rectifiers |
| Thermal performance | 70 °C/W RθJA (pulsed) - Enables higher power density than standard SOT23-3 equivalents |
Applications
| DC-DC Buck Converter | LED Backlight Driver |
|---|---|
Use Scenario: 5 V input to 3.3 V/2 A point-of-load regulation in portable SSD controllers. IC Role / Device Role: Low-side synchronous rectifier replacing external Schottky diode. Use Value: Reduces conduction loss by 40% vs. 0.4 V Schottky at 2 A, improving efficiency from 88% to 92%. |
Use Scenario: PWM-controlled current sink for 4-string white LED backlight in industrial HMIs. IC Role / Device Role: High-speed current switch modulating LED string current up to 1 MHz. Use Value: 12 ns body diode tRR prevents ghosting during rapid dimming transitions. |
| USB Power Delivery Switch | Load Switch for IoT Sensor Node |
Use Scenario: Input protection and hot-swap control in USB-C PD 3.0 sink designs. IC Role / Device Role: Reverse-polarity and overcurrent protected high-side load switch. Use Value: 55 mΩ RDS(ON) limits voltage drop to <110 mV at 2 A, preserving bus voltage margin. |
Use Scenario: Controlled power gating of BLE SoC and environmental sensors in battery-powered nodes. IC Role / Device Role: Low-quiescent-current enable-controlled power switch. Use Value: 1 µA IDSS leakage preserves >10-year shelf life in coin-cell applications. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020LSD-13 | RDS(ON) = 32 mΩ @ 4.5 V but larger SOT23-6 footprint; higher Ciss (1050 pF) | Better conduction loss but slower switching; less suitable for >1 MHz converters | Select when thermal margin is constrained and switching frequency ≤500 kHz |
| AO3400 | RDS(ON) = 44 mΩ @ 4.5 V; 10.5 nC Qg; no redundant pins (SOT23-3) | Lower gate charge but no Kelvin source/drain; higher package inductance limits EMI performance | Select when board space is critical and layout allows single-source routing |
Compared with DMN2020LSD-13 and AO3400, ZXMN2A03E6TC delivers optimal balance of low RDS(ON), low Qg, and dual-source/drain terminals-making it preferred for compact, high-frequency, thermally constrained DC-DC modules where layout-induced ringing must be minimized.
Availability
ZXMN2A03E6TC is available at Aetrix Electronics and suitable for DC-DC converters, LED backlight drivers, and USB power delivery systems requiring stable component supply across production lifecycles.
Supply support for ZXMN2A03E6TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Malaysia, and Taiwan.
ZXMN2A03E6TC belongs to Diodes' ZXMN logic-level MOSFET family, engineered specifically for high-efficiency, space-constrained power management in consumer, computing, and industrial applications.
FAQ
What is the maximum safe operating temperature for ZXMN2A03E6TC?
The device has an operating junction temperature range of –55°C to +150°C. Under continuous DC conditions on a 25 mm × 25 mm FR-4 board with 1 oz copper, the maximum ambient temperature sustaining 4.6 A is approximately +75°C, based on its 113 °C/W steady-state RθJA and 1.1 W power dissipation limit.
Can ZXMN2A03E6TC be used in a high-side switch configuration?
Yes, but only with gate drive referenced to the source (i.e., floating or bootstrap gate driver). Its VGSS rating of ±12 V and 20 V VDSS allow use in high-side buck or half-bridge topologies up to 12 V input, provided the gate driver maintains VGS within specification during switching transitions.
Does ZXMN2A03E6TC have avalanche capability?
No rated avalanche energy (EAS) is specified in the datasheet. The device is not characterized for repetitive unclamped inductive switching and should be protected with appropriate snubbers or clamping circuits in inductive load applications.
How does the dual-source/dual-drain pinout improve performance?
The paired Source (Pins 1 & 4) and Drain (Pins 3 & 5) terminals reduce package parasitic inductance by ~35% versus single-terminal SOT23-3 equivalents. This lowers voltage spikes during hard switching and improves EMI signature-critical in high-frequency, high-di/dt DC-DC designs.
ZXMN2A03E6TC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 55mOhm @ 7.2A, 4.5V
- Vgs(th) (Max) @ Id:
- 700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 8.2 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 837 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-6
ZXMN2A03E6TC FAQ
1.How can I place an order for ZXMN2A03E6TC through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXMN2A03E6TC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXMN2A03E6TC reliable?
The price and inventory of ZXMN2A03E6TC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMN2A03E6TC is usually 5 days.
3.What payment methods are accepted for ZXMN2A03E6TC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMN2A03E6TC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZXMN2A03E6TC?
ZXMN2A03E6TC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXMN2A03E6TC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXMN2A03E6TC?
For technical support, including ZXMN2A03E6TC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMN2A03E6TC requirements.
6.How does Aetrix verify that ZXMN2A03E6TC is sourced from the original manufacturer or authorized distributors?
All ZXMN2A03E6TC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMN2A03E6TC meets industry standards.
7.What is the process for return or replacement of ZXMN2A03E6TC?
All ZXMN2A03E6TC units undergo pre-shipment inspection (PSI). If there is an issue with ZXMN2A03E6TC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXMN2A03E6TC part is unused and in its original packaging.
Return procedure for ZXMN2A03E6TC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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