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Diodes Incorporated ZXMN2A04DN8TA
- Part No.:
- ZXMN2A04DN8TA
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
ZXMN2A04DN8TA.pdf
- Description:
- MOSFET 2N-CH 20V 5.9A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:542
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Product details
Overview
ZXMN2A04DN8TA from Diodes Incorporated (formerly Zetex Semiconductors) is a dual N-channel enhancement-mode Trench MOSFET in SOIC-8 package, rated for 20 V VDS, 7.7 A continuous drain current at 25°C, and 25 mΩ RDS(on) at VGS = 4.5 V - optimized for high-efficiency low-voltage DC-DC converters and power management switches.
For engineers reviewing the ZXMN2A04DN8TA datasheet, ZXMN2A04DN8TA pinout, ZXMN2A04DN8TA application, or ZXMN2A04DN8TA equivalent, key selection criteria include dual-channel thermal coupling behavior, body diode reverse recovery time (18 ns), gate charge (22.1 nC @ 15 V), and SOIC-8 footprint compatibility with space-constrained board layouts.
Technical Context
This dual MOSFET integrates two independent N-channel devices sharing a common source configuration in a single SOIC-8 package. Each channel supports 20 V breakdown voltage, 7.7 A continuous drain current (TA = 25°C), and exhibits fast switching with tr = 14.8 ns and tf = 30.6 ns under standard test conditions (VDD = 10 V, ID = 1 A, RG ≈ 6 Ω).
Thermal performance depends on PCB layout: RJA ranges from 60 °C/W (dual-die active, FR4) to 100 °C/W (single-die, 25 mm × 25 mm 1 oz copper). Body diode forward voltage is 0.85–0.95 V at IS = 5.1 A, with Qrr = 8.9 nC and trr = 18.0 ns - critical for synchronous rectification efficiency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 20 V - supports input rails up to 16 V nominal in buck converters with margin |
| RDS(on) | 0.025 Ω @ VGS = 4.5 V, ID = 5.9 A - enables <150 mW conduction loss per channel at 5 A |
| ID Continuous | 7.7 A @ TA = 25°C - usable up to ~6.2 A at 70°C ambient without derating |
| Qg | 22.1 nC @ VDS = 15 V - determines gate driver current requirement (~1.1 mA avg for 200 kHz switching) |
| trr / Qrr | 18.0 ns / 8.9 nC - minimizes shoot-through risk and switching loss in synchronous rectifiers |
| PD (SOIC-8) | 1.25 W @ TA = 25°C - requires thermal pad or copper pour for >1 W sustained operation |
Pinout & Package
Package: SOIC-8 (3.9 mm × 4.9 mm, 1.27 mm pitch), surface-mount, dual-channel N-channel MOSFET with shared source terminals. Pin 1 marked by notch or dot.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (Channel 1) | Common low-side return path for first MOSFET; electrically tied internally |
| 4 | Gate (Channel 1) | Controls turn-on of Channel 1; threshold VGS(th) = 0.7 V typical |
| 5, 6, 7 | Source (Channel 2) | Common low-side return path for second MOSFET; isolated from Channel 1 source |
| 8 | Gate (Channel 2) | Independent control input for Channel 2; same VGS(th) and RDS(on) as Channel 1 |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4.5 V drive | 25 mΩ enables efficient operation directly from 5 V or 3.3 V logic-level gate drivers |
| Dual-channel SOIC-8 integration | Reduces PCB area vs. two discrete SO-8 MOSFETs; simplifies layout for half-bridge or dual-switch topologies |
| Fast body diode recovery | 18 ns trr and 8.9 nC Qrr support high-frequency synchronous rectification without excessive ringing |
| Low gate threshold | 0.7 V typical VGS(th) ensures reliable turn-on even with marginal gate drive margins |
Applications
| DC-DC Synchronous Buck Converter | Load Disconnect Switch |
|---|---|
Use Scenario: 5 V input to 1.2 V/6 A output supply for FPGA core rail. IC Role / Device Role: High-side and low-side switching elements in integrated dual-MOSFET power stage. Use Value: 25 mΩ RDS(on) limits conduction loss to <180 mW per FET; fast trr prevents cross-conduction during dead-time. | Use Scenario: Isolating backup battery from main system bus during fault or sleep mode. IC Role / Device Role: Dual N-channel back-to-back configuration for bidirectional blocking. Use Value: Low 0.7 V VGS(th) allows full turn-on with 1.8 V control signal; SOIC-8 footprint saves board space vs. discrete solution. |
| Motor Driver Half-Bridge | USB Power Delivery Switch |
Use Scenario: 12 V brushed DC motor control in portable medical pump. IC Role / Device Role: Low-side switch pair driving H-bridge legs with PWM. Use Value: 7.7 A rating supports peak stall currents; 14.8 ns rise time enables clean 20 kHz PWM edges. | Use Scenario: Enabling/disabling 5 V/3 A USB-C power path in docking station. IC Role / Device Role: Single-channel used as high-side load switch with external level shift. Use Value: 20 V rating accommodates 5.5 V max USB PD tolerance; 22.1 nC Qg ensures fast 100 µs turn-on/off transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel low-voltage power switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020LSD-13 | RDS(on) = 22 mΩ @ 4.5 V; SO-8, but single-channel only - requires two units for dual function | No integrated dual topology; higher component count and layout complexity | Choose when higher RDS(on) margin or separate thermal management per channel is required |
| SI6926ADQ-T1-GE3 | Dual N-channel, 30 V VDS, RDS(on) = 28 mΩ @ 4.5 V; slightly higher voltage rating and on-resistance | Better overvoltage headroom but 12% higher conduction loss at 5 A | Prefer when system must tolerate transient 24 V surges or where 30 V rating aligns with platform standardization |
Compared with DMN2020LSD-13 and SI6926ADQ-T1-GE3, ZXMN2A04DN8TA delivers optimal balance of low 4.5 V RDS(on), dual integration, and proven 20 V robustness - making it preferred for compact, high-efficiency 5–12 V power stages where thermal coupling between channels is acceptable.
Availability
ZXMN2A04DN8TA is available at Aetrix Electronics and suitable for DC-DC converters, load disconnect switches, and motor control circuits requiring stable component supply, consistent SOIC-8 sourcing, and verified dual-MOSFET performance across temperature.
Supply support for ZXMN2A04DN8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its high-performance analog and power portfolio, focusing on reliability, efficiency, and application-specific optimization for industrial and computing markets.
ZXMN2A04DN8TA belongs to Zetex's TrenchMOS® power management family, engineered specifically for low-voltage, high-current switching in space-constrained DC-DC and battery-powered systems.
FAQ
What is the maximum safe operating junction temperature for ZXMN2A04DN8TA?
The absolute maximum junction temperature is +150°C, with recommended continuous operation below +125°C. Derating begins at 25°C ambient using linear factors: 10 mW/°C for 1.25 W PD rating, or 14 mW/°C for 1.8 W rating depending on PCB copper coverage and dual-die usage mode.
Can ZXMN2A04DN8TA be used in a synchronous rectifier configuration?
Yes - its body diode has trr = 18.0 ns and Qrr = 8.9 nC at 25°C, enabling efficient synchronous rectification in buck converters up to 1 MHz. Gate drive must ensure precise timing to avoid shoot-through, especially given its low 0.7 V VGS(th).
Is the SOIC-8 package lead-free and RoHS compliant?
Yes - ZXMN2A04DN8TA is manufactured with lead-free terminations and complies with EU RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL1), allowing unlimited floor life at ≤30°C/60% RH.
How does thermal resistance differ between single-die and dual-die operation?
RJA is 100 °C/W for one active die on 25 mm × 25 mm FR4, but drops to 60 °C/W when both dies operate equally - due to shared heat spreading across larger copper area. This 40% improvement requires symmetrical power distribution and proper PCB thermal design.
ZXMN2A04DN8TA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 5.9A
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 5.9A, 4.5V
- Vgs(th) (Max) @ Id:
- 700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 22.1nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1880pF @ 10V
- Power - Max:
- 1.8W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
ZXMN2A04DN8TA FAQ
1.How can I place an order for ZXMN2A04DN8TA through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXMN2A04DN8TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXMN2A04DN8TA reliable?
The price and inventory of ZXMN2A04DN8TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMN2A04DN8TA is usually 5 days.
3.What payment methods are accepted for ZXMN2A04DN8TA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMN2A04DN8TA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZXMN2A04DN8TA?
ZXMN2A04DN8TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXMN2A04DN8TA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXMN2A04DN8TA?
For technical support, including ZXMN2A04DN8TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMN2A04DN8TA requirements.
6.How does Aetrix verify that ZXMN2A04DN8TA is sourced from the original manufacturer or authorized distributors?
All ZXMN2A04DN8TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMN2A04DN8TA meets industry standards.
7.What is the process for return or replacement of ZXMN2A04DN8TA?
All ZXMN2A04DN8TA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMN2A04DN8TA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXMN2A04DN8TA part is unused and in its original packaging.
Return procedure for ZXMN2A04DN8TA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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