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Diodes Incorporated ZXMN2A04DN8TC
- Part No.:
- ZXMN2A04DN8TC
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
ZXMN2A04DN8TC.pdf
- Description:
- MOSFET 2N-CH 20V 5.9A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:4,276
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Product details
Overview
ZXMN2A04DN8TC from Diodes Incorporated (formerly Zetex Semiconductors) is a dual 20V N-channel enhancement-mode MOSFET in SOIC-8 package, featuring RDS(on) = 25 mΩ @ VGS = 4.5 V, ID = 5.9 A, fast switching (tr = 14.8 ns), and low gate charge (Qg = 22.1 nC). It is used as synchronous rectifier and load switch in compact DC–DC converters.
For engineers reviewing the ZXMN2A04DN8TC datasheet, ZXMN2A04DN8TC pinout, ZXMN2A04DN8TC application, or ZXMN2A04DN8TC equivalent, key selection criteria include dual-die thermal coupling, body diode recovery (trr = 18.0 ns), SOIC-8 footprint compatibility, and gate drive compatibility with 2.5–4.5 V logic-level controllers.
Technical Context
This dual N-channel MOSFET integrates two identical trench-structured silicon dies in a single SOIC-8 package, sharing common source terminals per channel. Each channel operates independently with matched VGS(th) (0.7 V typ) and RDS(on), enabling balanced current sharing in paralleled configurations.
Thermal design requires distinction between single-die (RJA = 100 °C/W) and dual-die operation (RJA = 60–70 °C/W depending on PCB copper area and pulse duty). Body diode conduction supports bidirectional current flow in H-bridge motor control and reverse-polarity protection circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum blocking voltage for low-voltage power rails (e.g., 12 V input systems) |
| RDS(on) | 25 mΩ @ VGS = 4.5 V - Enables <150 mW conduction loss at 5.9 A, critical for thermally constrained DC–DC stages |
| ID (cont) | 5.9 A @ TA = 25°C - Sustained current capability with standard SOIC-8 PCB layout (25 mm × 25 mm 1 oz Cu) |
| Qg | 22.1 nC @ VDS = 15 V - Low gate drive energy reduces controller loading and enables >1 MHz switching |
| trr | 18.0 ns - Fast body diode recovery minimizes shoot-through risk in synchronous buck topologies |
| VGS(th) | 0.7 V typ - Compatible with 1.8–3.3 V microcontroller GPIOs without level-shifting |
| Ciss | 1880 pF - Input capacitance sets gate drive impedance requirements for stable turn-on/turn-off |
Pinout & Package
SOIC-8 (3.9 mm × 4.9 mm × 1.75 mm height), surface-mount, dual-channel configuration with isolated drains and shared sources per channel. Pin 1 marked by notch or dot.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source 1 | Common source node for Channel 1; connects to ground or low-side reference in half-bridge |
| 4 | Gate 1 | Control terminal for Channel 1; requires 2.5–12 V drive relative to Source 1 |
| 5, 6, 7 | Source 2 | Common source node for Channel 2; electrically independent from Source 1 |
| 8 | Gate 2 | Control terminal for Channel 2; fully isolated from Gate 1 for independent switching |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOSFET architecture | Enables simultaneous low RDS(on) and high gfs (40 S), improving efficiency and transient response |
| Low-profile SOIC-8 package | 1.75 mm max height allows integration into space-constrained modules (e.g., PoL converters) |
| Logic-level gate threshold | VGS(th) = 0.7 V typ ensures reliable turn-on with 2.5 V and 3.3 V controllers without external bias |
| Matched dual-die characteristics | Paired VGS(th), RDS(on), and Qg support symmetrical current sharing in redundant or interleaved designs |
Applications
| DC–DC Synchronous Buck Converter | USB-C Power Delivery Load Switch |
|---|---|
Use Scenario: 12 V input to 3.3 V/5 V output conversion in portable SSD enclosures. IC Role / Device Role: Dual-channel high-side and low-side switch replacing discrete MOSFETs and driver ICs. Use Value: Reduces BOM count by 2× and improves light-load efficiency by minimizing body diode conduction losses. | Use Scenario: Inrush current limiting and reverse-voltage protection on USB-C VBUS lines. IC Role / Device Role: Back-to-back configured N-MOSFET pair controlling bidirectional power path. Use Value: Eliminates need for external Schottky diodes and enables fast fault shutdown (<100 ns) via gate control. |
| H-Bridge Motor Driver | Hot-Swap Controller |
Use Scenario: 24 V brushed DC motor control in industrial actuators with direction reversal. IC Role / Device Role: Two independent half-bridges using one device per leg (drain-source-drain topology). Use Value: Matches channel timing (trr = 18.0 ns, tf = 30.6 ns) to minimize cross-conduction during commutation. | Use Scenario: Insertion of 12 V board into live backplane with current limiting and fault isolation. IC Role / Device Role: Low-side current-sense switch with integrated body diode for soft-start and overcurrent cutoff. Use Value: Supports programmable current limit via external sense resistor and provides <1 µs fault response using gate drive disable. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020LSD-13 | RDS(on) = 22 mΩ @ 4.5 V, but single-channel SO-8; requires two devices for dual function | No integrated dual-die thermal coupling; higher layout complexity and PCB area | Select when independent thermal management per channel is required or when sourcing flexibility outweighs integration benefit |
| SI6926ADQ-T1-GE3 | Higher VDSS = 30 V, RDS(on) = 32 mΩ @ 4.5 V, Qg = 26 nC | Better voltage margin for 24 V systems but lower efficiency at 12 V due to higher RDS(on) | Select for 24 V industrial applications where 20 V rating is insufficient, accepting 28% higher conduction loss |
Compared with DMN2020LSD-13 and SI6926ADQ-T1-GE3, ZXMN2A04DN8TC uniquely delivers dual-channel integration with matched 25 mΩ RDS(on) and 18 ns body diode recovery in a single SOIC-8, reducing component count and interconnect inlays while maintaining tight thermal coupling for balanced current sharing.
Availability
ZXMN2A04DN8TC is available at Aetrix Electronics and suitable for DC–DC converters, USB-C power delivery modules, and motor control subsystems requiring stable component supply across production lifecycles.
Supply support for ZXMN2A04DN8TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its high-performance analog and power portfolio, emphasizing precision, efficiency, and reliability in discrete semiconductors.
ZXMN2A04DN8TC belongs to Zetex's TrenchMOS® power management series, designed specifically for high-efficiency, low-voltage DC–DC conversion and intelligent load switching in space- and thermally-constrained applications.
FAQ
What is the maximum continuous drain current for each channel at 70°C ambient?
Each channel supports 6.2 A continuous drain current at TA = 70°C with VGS = 10 V, measured under SOIC-8 mounting conditions on FR4 PCB (single-die thermal model). Derating follows 10 mW/°C linear factor above 25°C ambient.
Can ZXMN2A04DN8TC be used in back-to-back configuration for AC switching?
No - ZXMN2A04DN8TC contains two N-channel MOSFETs only, lacking complementary P-channel devices required for true bidirectional blocking. It supports unidirectional AC control (e.g., solid-state relay emulation) only when paired with external P-MOSFETs or driven with floating gate drivers.
Is the SOIC-8 package RoHS-compliant and lead-free?
Yes - ZXMN2A04DN8TC is manufactured in accordance with RoHS Directive 2011/65/EU and features 100% matte tin lead finish. The device meets JEDEC J-STD-020 moisture sensitivity level MSL3 and supports standard reflow profiles up to 260°C peak.
How does dual-die thermal coupling affect power derating?
When both channels operate simultaneously at equal power, junction-to-ambient thermal resistance drops to 60–70 °C/W (vs. 100 °C/W for single-die), increasing total power dissipation to 1.8–2.1 W at 25°C ambient. Derating must account for mutual heating using the dual-die RJA value, not the single-die specification.
ZXMN2A04DN8TC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 5.9A
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 5.9A, 4.5V
- Vgs(th) (Max) @ Id:
- 700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 22.1nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1880pF @ 10V
- Power - Max:
- 1.8W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
ZXMN2A04DN8TC FAQ
1.How can I place an order for ZXMN2A04DN8TC through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXMN2A04DN8TC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXMN2A04DN8TC reliable?
The price and inventory of ZXMN2A04DN8TC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMN2A04DN8TC is usually 5 days.
3.What payment methods are accepted for ZXMN2A04DN8TC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMN2A04DN8TC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZXMN2A04DN8TC?
ZXMN2A04DN8TC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXMN2A04DN8TC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXMN2A04DN8TC?
For technical support, including ZXMN2A04DN8TC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMN2A04DN8TC requirements.
6.How does Aetrix verify that ZXMN2A04DN8TC is sourced from the original manufacturer or authorized distributors?
All ZXMN2A04DN8TC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMN2A04DN8TC meets industry standards.
7.What is the process for return or replacement of ZXMN2A04DN8TC?
All ZXMN2A04DN8TC units undergo pre-shipment inspection (PSI). If there is an issue with ZXMN2A04DN8TC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXMN2A04DN8TC part is unused and in its original packaging.
Return procedure for ZXMN2A04DN8TC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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