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Diodes Incorporated ZXMN2AMCTA
- Part No.:
- ZXMN2AMCTA
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-WDFN Exposed Pad
- Datasheet:
-
ZXMN2AMCTA.pdf
- Description:
- MOSFET 2N-CH 20V 3.7A 8DFN
- Quantity:
- Payment:
- Shipping:
Inventory:4
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Product details
Overview
ZXMN2AMCTA from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a DFN3020B-8 package, rated for 20V V(BR)DSS, with RDS(on) of 120mΩ at VGS = 4.5V and 300mΩ at VGS = 2.5V, supporting up to 3.7A continuous drain current at TA = 25°C. It serves as a compact, thermally efficient power switch in portable DC-DC converters and battery disconnect circuits.
For engineers reviewing the ZXMN2AMCTA datasheet, ZXMN2AMCTA pinout, ZXMN2AMCTA application, or ZXMN2AMCTA equivalent, this device offers verified dual-channel switching in a 3.0mm × 2.0mm footprint, AEC-Q101 qualified reliability, and low-profile (0.8mm height) thermal performance critical for space-constrained power management designs.
Technical Context
This dual MOSFET integrates two independent N-channel silicon die in a single DFN package with exposed drain pads for enhanced thermal conduction. Each channel operates with gate threshold voltage (VGS(th)) between 0.7V and 3.0V and supports fast switching via low total gate charge (Qg = 3.1nC at VGS = 4.5V).
The device features integrated body diodes with VSD = 0.9V at IS = 3.2A and reverse recovery time trr = 23ns, enabling synchronous rectification and bidirectional current handling in buck converters and load switches without external diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 20V - Maximum blocking voltage per channel before avalanche breakdown; defines safe operating range in 12V/19V rail applications. |
| RDS(on) @ VGS=4.5V | 120mΩ - On-resistance at standard logic-level drive; enables <1.8W conduction loss at 3.7A in compact PCB layouts. |
| ID max (TA=25°C) | 3.7A - Continuous drain current per channel under nominal ambient conditions; supports high-efficiency point-of-load regulation. |
| Qg @ VGS=4.5V | 3.1nC - Total gate charge required for full turn-on; ensures sub-10ns switching transitions with low-drive-strength controllers. |
| RθJA (8 cm², 2oz Cu) | 83.3°C/W - Junction-to-ambient thermal resistance on standard FR4; allows ~1.5W steady-state dissipation without forced cooling. |
| VGS(th) | 0.7–3.0V - Gate threshold spread confirmed across production lot; guarantees reliable turn-on with 2.5V–3.3V microcontroller GPIOs. |
| trr | 23ns - Reverse recovery time of internal body diode; minimizes shoot-through risk and EMI in synchronous buck topologies. |
Pinout & Package
Package: DFN3020B-8, 3.0mm × 2.0mm × 0.8mm, thermally enhanced with dual exposed drain pads (D1/D2), RoHS-compliant NiPdAu plating, and UL 94V-0 rating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (D1) | Drain 1 | High-side or low-side power path terminal for Channel 1; electrically tied to exposed pad 1 for thermal and electrical grounding. |
| Pin 2 (S1) | Source 1 | Return node for Channel 1; referenced to system ground or floating node depending on topology (e.g., high-side switch source). |
| Pin 3 (G1) | Gate 1 | Control input for Channel 1; requires <3.1nC charge for full enhancement; sensitive to ESD (±12V VGSS rating). |
| Pin 4 (D2) | Drain 2 | Independent power path terminal for Channel 2; isolated from D1 but shares same package thermal mass. |
| Pin 5 (S2) | Source 2 | Return node for Channel 2; enables dual independent switching or paralleled operation with separate gate control. |
| Pin 6 (G2) | Gate 2 | Independent control input for Channel 2; identical drive requirements to G1; no internal cross-coupling. |
| Pads 7 & 8 (Exposed Drain) | Thermal / Power Tie | Two large copper pads beneath package bottom-each connected to respective drain (D1/D2); mandatory for thermal integrity and current handling. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-channel integration | Two fully isolated N-MOSFETs in one 3.0×2.0mm DFN package-reduces board area by 50% vs. TSOP6/SOT23-6 alternatives. |
| Low RDS(on) at 2.5V drive | 300mΩ at VGS = 2.5V enables direct interface with 2.5V/3.3V logic without level-shifting circuitry. |
| AEC-Q101 qualification | Qualified for automotive-grade reliability including temperature cycling, HTRB, and UHAST-validates use in infotainment and ADAS power rails. |
| Thermally optimized package | RθJL = 17.1°C/W to lead and RθJA = 51.0°C/W on 10cm² 1oz Cu-supports >2.4W dissipation in industrial ambient conditions. |
| Green construction | Halogen- and antimony-free, RoHS-compliant, and "Lead-Free" per J-STD-020 Level 1 moisture sensitivity-meets global environmental compliance mandates. |
Applications
| DC-DC Buck Converter | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Synchronous rectification stage in 5V–12V step-down converter for portable SSDs and IoT edge nodes. IC Role / Device Role / Timing Role: Dual-channel configuration used as high-side main switch (Ch1) and low-side synchronous rectifier (Ch2), driven by PWM controller with dead-time control. Use Value: 120mΩ RDS(on) at 4.5V reduces conduction loss by 35% versus discrete 1.5A MOSFETs, improving efficiency from 88% to 92% at 2A load. | Use Scenario: Input power path control for USB-C PD 3.0 compliant devices requiring 20V/3A support and reverse-current blocking. IC Role / Device Role / Timing Role: Dual N-MOSFET configured as back-to-back switch to enable bidirectional current flow and prevent reverse battery discharge during hot-plug events. Use Value: Integrated body diodes with 23ns trr and 0.9V VSD ensure clean turn-off and minimal voltage drop during 3A forward conduction, meeting USB PD spec ripple limits. |
| Battery Disconnect Switch | Portable Medical Sensor Power Gate |
Use Scenario: Isolation of Li-ion battery pack from system load during sleep mode or fault conditions in handheld diagnostic tools. IC Role / Device Role / Timing Role: Single-channel used as high-side disconnect switch with gate driven by microcontroller GPIO; second channel unused or paralleled for higher current. Use Value: 300mΩ RDS(on) at 2.5V allows direct MCU control without external driver, reducing BOM count and standby current leakage to <1μA. | Use Scenario: Precision power gating for low-noise analog front-end (AFE) in wearable ECG sensors, where supply noise must remain below 10μV RMS. IC Role / Device Role / Timing Role: Low-noise, low-RDS(on) switch placed between LDO output and AFE rail; operated in linear region for soft-start control during wake-up sequences. Use Value: 0.085Ω typical RDS(on) and 299pF Ciss minimize supply perturbation during turn-on, preserving signal integrity in sub-100nV/√Hz analog paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020LSD-13 | RDS(on) = 100mΩ @ 4.5V (lower), but larger SO-8 package (5.0×6.0mm) and no AEC-Q101 qualification. | Preferred for non-automotive, higher-current (>4A) applications where board space is not constrained. | Select when thermal margin >2W is required and AEC-Q101 is unnecessary. |
| SI2302DS-T1-GE3 | Single-channel SOT-23 device (3.7A, 120mΩ), smaller footprint but no dual integration or exposed drain thermal path. | Suitable only for single-switch functions; requires two units and extra routing for dual-channel needs. | Choose only if design uses discrete single-FET layout and cannot accommodate DFN reflow profile. |
Compared with DMN2020LSD-13 and SI2302DS-T1-GE3, ZXMN2AMCTA uniquely delivers dual-channel functionality, AEC-Q101 reliability, and industry-leading 3.0×2.0mm thermal DFN in one component-reducing layout complexity, improving power density, and eliminating inter-device timing skew in synchronous topologies.
Availability
ZXMN2AMCTA is available at Aetrix Electronics and suitable for DC-DC converters, USB-C power delivery systems, and battery disconnect switches requiring stable component supply, long-term lifecycle assurance, and automotive-grade reliability.
Supply support for ZXMN2AMCTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and ICs, specializing in high-performance, high-reliability components for power management, signal integrity, and protection applications.
ZXMN2AMCTA belongs to Diodes' ZXMN series of logic-level dual N-MOSFETs, engineered specifically for space-constrained, high-efficiency power switching in portable, automotive, and industrial systems where thermal performance and AEC-Q101 compliance are mandatory.
FAQ
What is the maximum continuous drain current per channel at 70°C ambient?
The ZXMN2AMCTA supports 3.0A continuous drain current per channel at TA = 70°C, as specified in the Absolute Maximum Ratings table. This derating accounts for thermal resistance and junction temperature limits (TJ ≤ 150°C) on standard 8 cm² FR4 PCB with 2oz copper. Operation above this current requires enhanced heatsinking or forced airflow.
Can both channels be paralleled to increase current capacity?
Yes-both channels can be paralleled with matched gate drive to achieve up to 6.0A total current at TA = 25°C, provided layout symmetry ensures equal current sharing. However, RDS(on) mismatch (±20% typical) and thermal coupling require careful PCB design; parallel operation is validated only under static conditions-not recommended for high-frequency PWM without individual gate resistors.
Is the DFN3020B-8 package compatible with standard reflow profiles?
Yes-the DFN3020B-8 package is qualified for lead-free reflow per JEDEC J-STD-020, with Moisture Sensitivity Level 1 (MSL-1). It withstands peak temperatures up to 260°C for 30 seconds and supports standard Pb-free SAC305 profiles. Thermal pad soldering requires controlled stencil aperture (80–90% coverage) and paste volume to avoid voiding and ensure mechanical reliability.
Does the device include ESD protection on gate terminals?
No-ZXMN2AMCTA does not integrate on-die ESD protection diodes. Its gate oxide is rated for ±12V VGSS, and handling requires Class 1C ESD controls (≤250V HBM). External 10kΩ series gate resistors and TVS clamping are recommended in systems exposed to connector hot-plug or cable discharge events.
ZXMN2AMCTA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-WDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 3.7A (Ta)
- Rds On (Max) @ Id, Vgs:
- 120mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 3.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 299pF @ 15V
- Power - Max:
- 1.7W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN3020B-8
ZXMN2AMCTA FAQ
1.How can I place an order for ZXMN2AMCTA through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXMN2AMCTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXMN2AMCTA reliable?
The price and inventory of ZXMN2AMCTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMN2AMCTA is usually 5 days.
3.What payment methods are accepted for ZXMN2AMCTA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMN2AMCTA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZXMN2AMCTA?
ZXMN2AMCTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXMN2AMCTA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXMN2AMCTA?
For technical support, including ZXMN2AMCTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMN2AMCTA requirements.
6.How does Aetrix verify that ZXMN2AMCTA is sourced from the original manufacturer or authorized distributors?
All ZXMN2AMCTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMN2AMCTA meets industry standards.
7.What is the process for return or replacement of ZXMN2AMCTA?
All ZXMN2AMCTA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMN2AMCTA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXMN2AMCTA part is unused and in its original packaging.
Return procedure for ZXMN2AMCTA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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