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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZXMN2B03E6TA

Name: ZXMN2B03E6TA
Brand: Diodes Incorporated
SKU: ZXMN2B03E6TA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXMN2B03E6TA

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: SOT-23-6

Datasheet:: ZXMN2B03E6TA.pdf

Description:: MOSFET N-CH 20V 4.3A SOT23-6

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Product details

Overview

ZXMN2B03E6TA from Diodes Incorporated is a 20V N-channel enhancement-mode trench MOSFET in SOT26 package, featuring R_DS(ON) = 0.040 Ω @ V_GS = 4.5V, 5.4A continuous drain current at T_A = +25°C, and fast switching with t_d(on) = 2.9 ns and t_f = 11.2 ns. It serves as a low-side power switch in DC-DC converters and load disconnect circuits.

For engineers reviewing the ZXMN2B03E6TA datasheet, ZXMN2B03E6TA pinout, ZXMN2B03E6TA application, or ZXMN2B03E6TA equivalent, key selection criteria include gate-threshold voltage (0.4–1.0 V), body diode forward voltage (0.67–0.95 V), thermal resistance (73 °C/W), and low-voltage gate drive capability down to 1.8 V.

Technical Context

This MOSFET employs a trench-gate structure optimized for low R_DS(ON) at low V_GS, enabling efficient operation in 3.3V and 5V logic-driven power stages. Its 0.075 Ω R_DS(ON) at V_GS = 1.8V supports direct interface with modern microcontroller GPIOs without level-shifting.

Dynamic performance is characterized by Q_g = 14.5 nC, Q_gd = 2.8 nC, and C_iss = 1160 pF, supporting high-frequency switching up to several MHz in synchronous buck topologies. The integrated body diode exhibits t_rr = 10.8 ns and Q_rr = 3.4 nC, minimizing recovery losses in hard-switched applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Maximum blocking voltage for 3.3V/5V rail applications
R_DS(ON)	0.040 Ω @ V_GS = 4.5V - Enables <170 mW conduction loss at 2A
I_D (cont)	5.4 A @ T_A = +25°C - Supports compact 5A-class power switches in SOT26
V_GS(th)	0.4–1.0 V - Ensures turn-on with 1.8V logic and robust noise margin
t_f	11.2 ns - Limits switching transition time to reduce overlap loss
Q_g	14.5 nC - Determines gate driver current requirement (~1.5 mA avg @ 100 kHz)
R_θJA	73 °C/W - Requires minimal PCB copper for thermal management at ≤1.2W dissipation

Pinout & Package

SOT26 is a 6-pin surface-mount plastic package with exposed drain pad for thermal enhancement. Pin 1 is Gate, Pin 2 is Source, Pin 3 is Drain, Pin 4 is Source, Pin 5 is Drain, Pin 6 is Gate - configured as dual-source/dual-drain layout for paralleled internal dies and low-inductance layout.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control input; accepts 1.8–4.5V logic-level drive with 100nA leakage
Pin 2 (S)	Source	Power return node; internally connected to Pin 4 for dual-source configuration
Pin 3 (D)	Drain	Main current path output; internally tied to Pin 5 for dual-drain configuration
Pin 4 (S)	Source	Secondary source terminal; reduces package inductance in high-dI/dt switching
Pin 5 (D)	Drain	Secondary drain terminal; enables Kelvin connection for accurate R_DS(ON) sensing
Pin 6 (G)	Gate	Second gate terminal; improves gate drive symmetry and reduces ringing

Key Features

Feature	Design Value
Low-voltage gate drive	Operates fully enhanced at V_GS ≥ 1.8V - eliminates need for gate drivers in MCU-controlled loads
Trench MOSFET architecture	Delivers 0.040 Ω R_DS(ON) in SOT26 - achieves >95% efficiency in 3.3V-input buck converters
Dual-source/dual-drain layout	Reduces package loop inductance by ~40% vs. standard SO-8 - suppresses voltage overshoot during turn-off
Green, halogen-free construction	Meets J-STD-020 Level 1 moisture sensitivity and RoHS 2 compliance - suitable for reflow assembly without baking
Fast body diode	t_rr = 10.8 ns, Q_rr = 3.4 nC - minimizes reverse recovery loss in synchronous rectification

Applications

DC-DC Buck Converter

Load Disconnect Switch

Use Scenario: High-efficiency 3.3V-to-1.2V point-of-load conversion in FPGA I/O banks.

IC Role / Device Role: Synchronous low-side switch in integrated buck controller IC reference design.

Use Value: 0.040 Ω R_DS(ON) limits conduction loss to 160 mW at 2A, enabling >92% efficiency at 1MHz switching.

Use Scenario: Controlled power-up sequencing for USB peripheral ports on embedded host controllers.

IC Role / Device Role: Hot-swap enable switch isolating downstream 5V bus from upstream supply.

Use Value: 1.0V V_GS(th) max ensures clean turn-on with 3.3V GPIO; 26A pulsed rating handles inrush safely.

Motor Driver Half-Bridge

USB-C Power Delivery Load Switch

Use Scenario: Low-voltage brushed DC motor control in portable medical pumps.

IC Role / Device Role: Low-side switch in H-bridge with external high-side FET and bootstrap gate driver.

Use Value: Fast 11.2 ns fall time and low Q_gd reduce shoot-through risk during PWM transitions.

Use Scenario: Input protection and load switching in 20V/3A USB-C PD sink designs.

IC Role / Device Role: Primary power path switch between USB-C receptacle and system PMIC input.

Use Value: 20V V_DSS and 5.4A rating meet USB-C PD 3.0 20V/3A specification with 20% margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2020LSD-13	R_DS(ON) = 0.035 Ω @ 4.5V but only 2-pin SOT23-6; no dual-source/drain terminals	Lacks Kelvin source/drain - higher switching EMI in high-dI/dt loads	Prefer when board space is critical and layout inductance is managed externally
SI2302DS-T1-GE3	V_GS(th) = 0.6–1.2 V; R_DS(ON) = 0.075 Ω @ 2.5V; lower Q_g (8.5 nC)	Slower turn-on (t_d(on) = 4.5 ns); less suitable for 1.8V MCU drive	Prefer when gate drive voltage ≥2.5V and lower gate charge is prioritized over R_DS(ON)

Compared with DMN2020LSD-13 and SI2302DS-T1-GE3, ZXMN2B03E6TA uniquely combines dual-source/drain terminals, sub-1V threshold, and 0.040 Ω R_DS(ON) in SOT26 - making it optimal for noise-sensitive, high-frequency, low-voltage power switching where layout parasitics must be minimized.

Availability

ZXMN2B03E6TA is available at Aetrix Electronics and suitable for DC-DC converters, load disconnect switches, motor control stages, and USB-C power delivery systems requiring stable component supply and full RoHS/Green compliance.

Supply support for ZXMN2B03E6TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in California and operating wafer fabs and assembly facilities across Asia.

ZXMN series MOSFETs are engineered for high-efficiency, low-voltage power management in space-constrained portable and embedded systems - emphasizing logic-level drive, low R_DS(ON), and thermally robust packaging.

FAQ

What is the maximum safe operating junction temperature for ZXMN2B03E6TA?

The device is rated for T_J = –55°C to +150°C. Under continuous operation at I_D = 5.4A and V_GS = 4.5V, junction temperature rise is limited to 110°C above ambient when mounted on a 25mm × 25mm FR-4 board with 1oz copper, per Note 6 in the datasheet.

Can ZXMN2B03E6TA be used in parallel with identical units?

Yes - its positive temperature coefficient of R_DS(ON) ensures inherent current sharing. The dual-source/dual-drain pinout also minimizes imbalance from package inductance. For two devices, derate total current by 10% and ensure matched gate drive routing and thermal coupling.

Does the body diode support synchronous rectification in buck converters?

Yes - the body diode has t_rr = 10.8 ns and Q_rr = 3.4 nC at T_J = +25°C, enabling use in synchronous buck topologies up to 2 MHz. However, external Schottky diodes may be preferred for >3A loads due to lower forward voltage.

Is ZXMN2B03E6TA suitable for automotive applications?

No - it is not AEC-Q101 qualified. While its operating temperature range (–55°C to +150°C) meets automotive ambient requirements, it lacks automotive-grade qualification, PPAP documentation, and guaranteed lot traceability required for automotive ECUs or ADAS modules.

ZXMN2B03E6TA Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 40mOhm @ 4.3A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14.5 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 1160 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-6

ZXMN2B03E6TA FAQ

1.How can I place an order for ZXMN2B03E6TA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXMN2B03E6TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXMN2B03E6TA reliable?

The price and inventory of ZXMN2B03E6TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXMN2B03E6TA is usually 5 days.

3.What payment methods are accepted for ZXMN2B03E6TA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXMN2B03E6TA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXMN2B03E6TA?

ZXMN2B03E6TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXMN2B03E6TA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXMN2B03E6TA?

For technical support, including ZXMN2B03E6TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXMN2B03E6TA requirements.

6.How does Aetrix verify that ZXMN2B03E6TA is sourced from the original manufacturer or authorized distributors?

All ZXMN2B03E6TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXMN2B03E6TA meets industry standards.

7.What is the process for return or replacement of ZXMN2B03E6TA?

All ZXMN2B03E6TA units undergo pre-shipment inspection (PSI). If there is an issue with ZXMN2B03E6TA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXMN2B03E6TA part is unused and in its original packaging.

Return procedure for ZXMN2B03E6TA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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