Diodes Incorporated ZXMN2F34MATA

Overview

ZXMN2F34MATA from Zetex Semiconductors is a 20V N-channel enhancement-mode Trench MOSFET in a 2mm × 2mm DFN322 package, optimized for low-voltage switching with 2.5V gate drive capability, R_DS(on) = 0.120 Ω at V_GS = 2.5V/1.0A and 0.060 Ω at V_GS = 4.5V/2.5A, used in compact DC-DC buck/boost converters and LED lighting drivers.

For engineers reviewing the ZXMN2F34MATA datasheet, ZXMN2F34MATA pinout, ZXMN2F34MATA application, or ZXMN2F34MATA equivalent, key selection criteria include low-threshold gate drive compatibility, thermal resistance (R_JA = 56 °C/W on FR4), pulsed drain current (I_DM = 19 A), body diode recovery (t_rr = 6.5 ns), and DFN322 footprint constraints.

Technical Context

This MOSFET employs Zetex's trench-gate process to achieve low R_DS(on) at gate voltages as low as 2.5V, enabling direct interface with 3.3V and 2.5V logic controllers without level-shifting. Its DFN322 package integrates exposed drain pad for enhanced thermal conduction and reduced junction-to-lead resistance (R_JL = 18.9 °C/W).

Dynamic parameters are characterized under controlled pulse conditions (≤300 μs, ≤2% duty cycle), with C_iss = 277 pF, Q_g = 2.8 nC, and fast switching (t_d(on) = 2.65 ns, t_f = 5.1 ns), supporting high-frequency (>1 MHz) power conversion topologies.

Key Specifications

Pinout & Package

The ZXMN2F34MATA uses a 3-terminal DFN322 (2 mm × 2 mm, 0.65 mm pitch) package with an exposed drain pad on the bottom surface for thermal and electrical connection to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Compared with DMN2004LK-7 and AO3400, ZXMN2F34MATA uniquely balances 2.5V drivability, DFN322 thermal efficiency (R_JA = 56 °C/W), and low Q_g, making it optimal for compact, high-frequency, logic-level-switched power stages where thermal headroom and gate drive margin are constrained.

Availability

ZXMN2F34MATA is available at Aetrix Electronics and suitable for buck/boost DC-DC converters, LED lighting drivers, and brushed motor control circuits requiring stable component supply despite its discontinued status.

Supply support for ZXMN2F34MATA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Zetex Semiconductors plc was a UK-based ISO 9001 and TS16949-certified designer of high-performance analog and power semiconductors, acquired by Diodes Incorporated in 2008.

ZXMN2F34MATA belongs to Zetex's TrenchFET® low-voltage MOSFET product line, engineered for logic-level switching in portable and thermally constrained power management systems.

FAQ

Is ZXMN2F34MATA still in production?

No-ZXMN2F34MATA is marked "DISCONTINUED" in the official Zetex datasheet (Issue 3, May 2008). However, Aetrix Electronics maintains legacy inventory with full traceability and supports design-in continuity through controlled allocation and cross-reference guidance for active alternatives.

Can ZXMN2F34MATA be used in place of a SOT-23 MOSFET?

Yes, but with critical layout changes: the DFN322 package has no leads and requires soldering the exposed drain pad to a thermal pad. Its R_JA = 56 °C/W is significantly better than typical SOT-23 (≈150 °C/W), enabling higher power density-but reflow profile and stencil design must follow DFN-specific guidelines.

What is the maximum safe operating frequency with ZXMN2F34MATA?

Based on t_d(on) + t_r + t_d(off) + t_f = 2.65 + 4.2 + 9.9 + 5.1 = 21.85 ns total switching time, the device supports practical operation up to ≈10–20 MHz in resonant or zero-voltage-switching topologies, though hard-switched applications are typically limited to ≤2 MHz for thermal and EMI reasons.

Does ZXMN2F34MATA have avalanche rating?

No-avalanche capability is not specified in the datasheet. The absolute maximum rating table defines only V_DSS = 20 V and repetitive pulsed drain current I_DM = 19 A under defined test conditions. Designers must ensure voltage transients remain within V_DSS using snubbers or clamping circuits.